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Nano tracks in fullerene film by dense electronic excitations
Authors:
P. Kumar,
D. K. Avasthi,
J. Ghatak,
P. V. Satyam,
R. Prakash,
A. Kumar
Abstract:
In the present work, we investigate the formation of nano tracks by cluster and mono-atomic ion beams in the fullerene (C60) thin films by High Resolution Transmission Electron Microscopy (HRTEM). The fullerene films on carbon coated grids were irradiated by 30 MeV C60 cluster beam and 120 MeV Au mono-atomic beams at normal and grazing angle to the incident ion beams. The studies show that the clu…
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In the present work, we investigate the formation of nano tracks by cluster and mono-atomic ion beams in the fullerene (C60) thin films by High Resolution Transmission Electron Microscopy (HRTEM). The fullerene films on carbon coated grids were irradiated by 30 MeV C60 cluster beam and 120 MeV Au mono-atomic beams at normal and grazing angle to the incident ion beams. The studies show that the cluster beam creates latent tracks of an average diameter of around 20 nm. The formation of large size nano tracks by cluster beam is attributed to the deposition of large electronic energy density as compared to mono-atomic beams.
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Submitted 25 April, 2014; v1 submitted 2 February, 2014;
originally announced February 2014.
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Electronic structure of oxygen-functionalized armchair graphene nanoribbons
Authors:
Adam J. Simbeck,
Deyang Gu,
Neerav Kharche,
Parlapalli Venkata Satyam,
Phaedon Avouris,
Saroj K. Nayak
Abstract:
The electronic and magnetic properties of varying width, oxygen-functionalized armchair graphene nanoribbons (AGNRs) are investigated using first-principles density functional theory (DFT). Our study shows that O-passivation results in a rich geometrical environment which in turn determines the electronic and magnetic properties of the AGNR. For planar systems a degenerate magnetic ground state, a…
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The electronic and magnetic properties of varying width, oxygen-functionalized armchair graphene nanoribbons (AGNRs) are investigated using first-principles density functional theory (DFT). Our study shows that O-passivation results in a rich geometrical environment which in turn determines the electronic and magnetic properties of the AGNR. For planar systems a degenerate magnetic ground state, arising from emptying of O lone-pair electrons, is reported. DFT predicts ribbons with ferromagnetic coupling to be metallic whereas antiferromagnetically coupled ribbons present three band gap families: one metallic and two semiconducting. Unlike hydrogen functionalized AGNRs, the oxygen functionalized ribbons can attain a lower energy configuration by adopting a non-planar geometry. The non-planar structures are non-magnetic and show three semiconducting families of band gap behavior. Quasiparticle corrections to the DFT results predict a widening of the band gaps for all planar and non-planar, semiconducting systems. This suggests that oxygen functionalization could be used to manipulate the electronic structures of AGNRs.
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Submitted 23 June, 2013;
originally announced June 2013.
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Gold assisted molecular beam epitaxy of Ge nanostructures on Ge(100) Surface
Authors:
A. Rath,
J. K. Dash,
R. R. Juluri,
A. Ghosh,
P. V. Satyam
Abstract:
We report on the gold assisted epitaxial growth of Ge nanostructures under ultra high vacuum (UHV) conditions (\approx3\times 10-10 mbar) on clean Ge (100) surfaces. For this study, \approx2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \approx500°C and following this, well ordered…
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We report on the gold assisted epitaxial growth of Ge nanostructures under ultra high vacuum (UHV) conditions (\approx3\times 10-10 mbar) on clean Ge (100) surfaces. For this study, \approx2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \approx500°C and following this, well ordered gold nanostructures placed on pedestal Ge were formed. A \approx 2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of \approx 500°C. The height of the Ge (pedestal) underneath gold increased along with the formation of small Ge islands. The effect of substrate temperature and role of gold on the formation of above structures has been discussed in detail. Electron microscopy (TEM, SEM) studies were carried out to determine the structure of Au - Ge nano systems.
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Submitted 1 August, 2012;
originally announced August 2012.
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Shape evolution of MBE grown Si$_{1-x}$Ge$_{x}$ structures on high index Si(5 5 12) surfaces: A temperature dependent study
Authors:
J. K. Dash,
A. Rath,
R. R. Juluri,
P. V. Satyam
Abstract:
The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature (RT) to 800$^\circ$C. Two modes of substrate heating i.e. radiative heating (RH) and direct current heating (DH) have been used. The post-growth characterizati…
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The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature (RT) to 800$^\circ$C. Two modes of substrate heating i.e. radiative heating (RH) and direct current heating (DH) have been used. The post-growth characterization was carried out ex situ by scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (X-TEM) and Rutherford backscattering spectrometry (RBS). In the RH case, we found spherical island structures at 600$^\circ$C with a bimodal distribution and upon increasing temperature, the structures got faceted at 700$^\circ$C. At 800$^\circ$C thick ($\sim$ 122nm) dome like structures are formed bounded by facets. While in the case of DC heating, after the optimum critical temperature 600$^\circ$C, well aligned trapezoidal Si$_{1-x}$Ge$_x$ structures with a graded composition starts forming along the step edges. Interestingly, these aligned structures have been found only around 600$^\circ$C, neither at low temperature nor at higher temperatures.
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Submitted 7 September, 2012; v1 submitted 28 May, 2012;
originally announced May 2012.
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Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)
Authors:
J. C. Mahato,
Debolina Das,
R. R. Juluri,
R. Batabyal,
Anupam Roy,
P. V. Satyam,
B. N. Dev
Abstract:
We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this cr…
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We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.
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Submitted 4 May, 2012;
originally announced May 2012.
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Structural modification in Au/Si(100) system: Role of surface oxide and vacuum level
Authors:
A. Rath,
J. K Dash,
R. R. Juluri,
P. V. Satyam
Abstract:
To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was done at 500°C in three different vacuum conditions: (1) low vacuum (LV) furnace (10-2 mbar), (2) UHV (10-10 mbar) (MBE chamber), (3) high vacuum (HV) chamber. The…
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To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was done at 500°C in three different vacuum conditions: (1) low vacuum (LV) furnace (10-2 mbar), (2) UHV (10-10 mbar) (MBE chamber), (3) high vacuum (HV) chamber. The variation in the overall shape of the gold nanostructures and finer changes at the edges, like rounding of corners has been reported in this work. Although well aligned nano rectangles were formed in both HV and LV cases, corner rounding is more prominent in LV case. Furthermore in UHV case, random structures were formed having sharp corners. In all the above three cases, samples were exposed to air (for half an hour) before annealing. To study the effect of surface oxide, in-situ annealing inside UHV-MBE chamber was done without exposing to air. Well aligned rectangles with sharp corners (no corner rounding) were formed. The details about the role of surface oxides in the corner rounding process are discussed.
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Submitted 24 April, 2012;
originally announced April 2012.
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Dynamic and Static Transmission Electron Microscopy Studies on Structural Evaluation of Au nano islands on Si (100) Surface
Authors:
Ashutosh Rath,
R. R. Juluri,
P. V. Satyam
Abstract:
Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In-situ, high temperature (from room temperature (RT) to 8…
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Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In-situ, high temperature (from room temperature (RT) to 850\degreeC) real time TEM measurements showed the evaluation of gold nanoparticles into rectangular/square shaped gold silicide structures. This has been attributed to selective thermal decomposition of native oxide layer. Ex-situ annealing in low vacuum (10-2 mbar) at 850\degreeC showed no growth of nano-gold silicide structures. Under low vacuum annealing conditions, the creation of oxide could be dominating compared to the decomposition of oxide layers resulting in the formation of barrier layer between Au and Si.
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Submitted 20 April, 2012;
originally announced April 2012.
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Universality in Shape Evolution of Si$_{1-x}$Ge$_{x}$ Structures on High Index Silicon Surfaces
Authors:
J. K. Dash,
T. Bagarti,
A. Rath,
R. R. Juluri,
P. V. Satyam
Abstract:
The MBE grown Si$_{1-x}$Ge$_x$ islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth exponent parameters, \emph{irrespective} of the substrate orientations and size of the island structures. This phenomena has been explained by incorporating a deviation parameter ($ε$) to the surface barrier term (…
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The MBE grown Si$_{1-x}$Ge$_x$ islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth exponent parameters, \emph{irrespective} of the substrate orientations and size of the island structures. This phenomena has been explained by incorporating a deviation parameter ($ε$) to the surface barrier term ($E_D$) in the kinematic Monte Carlo (kMC) simulations as one of the plausible mechanisms.
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Submitted 2 April, 2012;
originally announced April 2012.
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Growth of Oriented Au Nanostructures: Role of Oxide at the Interface
Authors:
Ashutosh Rath,
J. K. Dash,
R. R. Juluri,
A. Rosenauer,
Marcos Schoewalter,
P. V. Satyam
Abstract:
We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements…
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We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements were performed to determine the morphology, orientation of the structures and the nature of oxide layer. Interfacial oxide layer, low vacuum and high temperature annealing conditions are found to be necessary to grow oriented gold structures. These gold structures can be transferred by simple scratching method.
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Submitted 5 March, 2012;
originally announced March 2012.
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Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface
Authors:
Ashutosh Rath,
J. K. Dash,
R. R. Juluri,
A Rosenauer,
P V Satyam
Abstract:
Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were used prior to gold thin film deposition: (i) without native oxide and on ultra-clean reconstructed Si surfaces and (ii) with native oxide covered Si surfaces. For…
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Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were used prior to gold thin film deposition: (i) without native oxide and on ultra-clean reconstructed Si surfaces and (ii) with native oxide covered Si surfaces. For a \approx 2.0 nm thick Au films deposited on reconstructed Si(100) surfaces using molecular beam epitaxy method under ultra high vacuum conditions, aligned four-fold symmetric nanogold silicide structures formed at relatively lower temperatures (compared with the one with native oxide at the interface). For this system, 82% of the nanostructures were found to be nano rectangles like structures with an average length \approx 27 nm and aspect ratio of 1.13 at \approx 700°C. For \approx 5.0 nm thick Au films deposited on Si (100) surface with native oxide at the interface, formation of rectangular structures were observed at higher temperatures (\approx 850° C). At these high temperatures, desorption of the gold silicide followed the symmetry of the substrate. Native oxide at the interface was found to act like a barrier for the inter-diffusion phenomena. Structural characterization was carried out using advanced electron microscopy methods.
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Submitted 3 February, 2012;
originally announced February 2012.
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Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces
Authors:
Ashutosh Rath,
J. K. Dash,
R. R. Juluri,
Marco Schowalter,
Knut Mueller,
A. Rosenauer,
P. V. Satyam
Abstract:
We report on the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions (\approx 3\times 10^{-10} mbar) on clean Si(100) surfaces. For this study, \approx 2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \apprx 500°C and following this, nearly…
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We report on the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions (\approx 3\times 10^{-10} mbar) on clean Si(100) surfaces. For this study, \approx 2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \apprx 500°C and following this, nearly square shaped Au_{x}Si_{1-x} nano structures of average length \approx 48 nm were formed. A \approx 2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of \approx 500°C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au - Ge nano systems. Rutherford backscattering Spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.
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Submitted 3 February, 2012;
originally announced February 2012.
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Growth of narrow-neck, epitaxial and nearly spherical Ge nanoislands on air-exposed Si(111)-(7$\times$7) surfaces
Authors:
K. Bhattacharjee,
A. Roy,
S. Roy,
J. Ghatak,
S. Mathew,
P. V. Satyam,
B. N. Dev
Abstract:
Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. ST…
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Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. STM measurements reveal the growth of very small (~2 nm diameter) Ge islands with a high number density of about 1.8\times10^12 cm-2. The island size has been found to depend on the amount of deposited Ge as well as the substrate temperature during Ge deposition. HRXTEM micrographs reveal that the islands are nearly spherical in shape, making narrow-neck contact with the substrate surface. At 520°C growth temperature both epitaxial and non-epitaxial islands grow. However, at 550°C, Ge islands predominantly grow epitaxially by a narrow-contact with Si via voids in the oxide layer. Growth of vertically elongated Ge islands is also observed in HRXTEM measurements with a very small diameter-to-height aspect ratio (~0.5-1), a hitherto unreported feature of epitaxial Ge growth on Si surfaces. In addition, stacking fault and faceting are observed in islands as small as 5 nm diameter. Ge islands, not even in contact with the Si substrate, appear to be in epitaxial alignment with the Si substrate. The island size distribution is essentially monomodal. As the contact area of Ge islands with Si through the voids in the oxide layer can be controlled via growth temperature, the results indicate that tunability of the potential barrier at the interface and consequently the tunability of electronic levels and optical properties can be achieved by the control of growth temperature.
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Submitted 19 October, 2011;
originally announced October 2011.
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Ion induced segregation in gold nanostructured thin films on silicon
Authors:
J. Ghatak,
P. V. Satyam
Abstract:
We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high beam flux of 6.3x1012 ions cm-2 s-1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively.…
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We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high beam flux of 6.3x1012 ions cm-2 s-1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6x1013 ions cm-2) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5x10^14 ions cm-2, disassociation of gold silicide and out-diffusion lead to segregation of gold to defect - rich surface and interface region.
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Submitted 4 August, 2008;
originally announced August 2008.
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Flux dependent 1.5 MeV self-ion beam induced sputtering from Gold nanostructured thin films
Authors:
J. Ghatak,
B. Sundaravel,
K. G. M. Nair,
P. V. Satyam
Abstract:
We discuss four important aspects of 1.5 MeV Au2+ ion-induced flux dependent sputtering from gold nanostrcutures (of an average size 7.6 nm and height 6.9 nm) that are deposited on silicon substrates: (a) Au sputtering yield at the ion flux of 6.3x10^12 ions cm-2 s-1 is found to be 312 atoms/ion which is about five times the sputtering yield reported earlier under identical irradiation condition…
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We discuss four important aspects of 1.5 MeV Au2+ ion-induced flux dependent sputtering from gold nanostrcutures (of an average size 7.6 nm and height 6.9 nm) that are deposited on silicon substrates: (a) Au sputtering yield at the ion flux of 6.3x10^12 ions cm-2 s-1 is found to be 312 atoms/ion which is about five times the sputtering yield reported earlier under identical irradiation conditions at a lower beam flux of 10^9 ions cm-2 s-1, (b) the sputtered yield increases with increasing flux at lower fluence and reduces at higher fluence (1.0x10^15 ions cm-2) for nanostructured thin films while the sputtering yield increases with increasing flux and fluence for thick films (27.5 nm Au deposited on Si) (c) Size distribution of sputtered particles has been found to vary with the incident beam flux showing a bimodal distribution at higher flux and (d) the decay exponent obtained from the size distributions of sputtered particles showed an inverse power law dependence ranging from 1.5 to 2.5 as a function of incident beam flux. The exponent values have been compared with existing theoretical models to understand the underlying mechanism. The role of wafer temperature associated with the beam flux has been invoked for a qualitative understanding of the sputtering results in both the nanostructured thin films and thick films.
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Submitted 19 June, 2008;
originally announced June 2008.
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Ion beam induced enhanced diffusion from gold thin films in silicon
Authors:
J. Ghatak,
B. Sundaravel,
K. G. M. Nair,
P. V. Satyam
Abstract:
Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions cm-2 s-1 and fluence up to 1x10^15 ions cm-2. The high resolution transmission electron microscopy measurements showed the presence of gold silicide formation fo…
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Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions cm-2 s-1 and fluence up to 1x10^15 ions cm-2. The high resolution transmission electron microscopy measurements showed the presence of gold silicide formation for the above-mentioned systems at fluence greater than equal to 1x1014 ions cm-2. The maximum depth to which the gold atoms have been diffused at a fluence of 1x10^14 ions cm-2 for the cases of 2.0, 5.3, 10.9 and 27.5 nm thick films has been found to be 60, 95, 160 and 13 nm respectively. Interestingly, at higher fluence of 1x1015 ions cm-2 in case of 27.5 nm thick film, gold atoms from the film transported to a maximum depth of 265 nm in the substrate. The substrate silicon is found to be amorphous at the above fluence values where unusually large mass transport occurred. Enhanced diffusion has been explained on the basis of ion beam induced, flux dependent amorphous nature of the substrate, and transient beam induced temperature effects. This work confirms the absence of confinement effects that arise from spatially confined structures and existence of thermal and chemical reactions during ion irradiation.
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Submitted 26 May, 2008;
originally announced May 2008.
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Flux dependent MeV self-ion- induced effects on Au nanostructures: Dramatic mass transport and nano-silicide formation
Authors:
J. Ghatak,
M. Umananda Bhatta,
B. Sundaravel,
K. G. M. Nair,
Sz-Chian Liou,
Cheng-Hsuan Chen,
Yuh-Lin Wang,
P. V. Satyam
Abstract:
We report a direct observation of dramatic mass transport due to 1.5 MeV Au2+ ion impact on isolated Au nanostructures of an average size 7.6 nm and a height 6.9 nm that are deposited on Si (111) substrate under high flux (3.2x10^10 to 6.3x10^12 ions cm-2 s-1) conditions. The mass transport from nanostructures found to extend up to a distance of about 60 nm into the substrate, much beyond their…
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We report a direct observation of dramatic mass transport due to 1.5 MeV Au2+ ion impact on isolated Au nanostructures of an average size 7.6 nm and a height 6.9 nm that are deposited on Si (111) substrate under high flux (3.2x10^10 to 6.3x10^12 ions cm-2 s-1) conditions. The mass transport from nanostructures found to extend up to a distance of about 60 nm into the substrate, much beyond their size. This forward mass transport is compared with the recoil implantation profiles using SRIM simulation. The observed anomalies with theory and simulations are discussed. At a given energy, the incident flux plays a major role in mass transport and its re-distribution. The mass transport is explained on the basis of thermal effects and creation of rapid diffusion paths at nano-scale regime during the course of ion irradiation. The unusual mass transport is found to be associated with the formation of gold silicide nanoalloys at sub-surfaces. The complexity of the ion-nanostructure interaction process has been discussed with a direct observation of melting (in the form of spherical fragments on the surface) phenomena. The transmission electron microscopy, scanning transmission electron microscopy and Rutherford backscattering spectroscopy methods have been used.
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Submitted 1 April, 2008; v1 submitted 25 March, 2008;
originally announced March 2008.
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Size distribution of sputtered particles from Au nanoislands due to MeV self-ion bombardment
Authors:
B. Satpati,
J. Ghatak,
P. V. Satyam,
B. N. Dev
Abstract:
Nanoisland gold films, deposited by vacuum evaporation of gold onto Si(100) substrates, were irradiated with 1.5 MeV Au$^{2+}$ ions up to a fluence of $5\times 10^{14}$ ions cm$^{-2}$ and at incidence angles up to $60^{\circ}$ with respect to the surface normal. The sputtered particles were collected on carbon coated grids (catcher grid) during ion irradiation and were analyzed with transmission…
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Nanoisland gold films, deposited by vacuum evaporation of gold onto Si(100) substrates, were irradiated with 1.5 MeV Au$^{2+}$ ions up to a fluence of $5\times 10^{14}$ ions cm$^{-2}$ and at incidence angles up to $60^{\circ}$ with respect to the surface normal. The sputtered particles were collected on carbon coated grids (catcher grid) during ion irradiation and were analyzed with transmission electron microscopy and Rutherford backscattering spectrometry. The average sputtered particle size and the areal coverage are determined from transmission electron microscopy measurements, whereas the amount of gold on the substrate is found by Rutherford backscattering spectrometry. The size distributions of larger particles (number of atoms/particle, $n$ $\ge$ 1,000) show an inverse power-law with an exponent of $\sim$ -1 in broad agreement with a molecular dynamics simulation of ion impact on cluster targets.
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Submitted 17 March, 2005;
originally announced March 2005.
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MeV ion-induced strain at nanoisland-semiconductor surface and interfaces
Authors:
J. Ghatak,
B. Satpati,
M. Umananda,
P. V. Satyam,
K. Akimoto,
K. Ito,
T. Emoto
Abstract:
Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and interfaces has been carried out using transmission electron microscopy (TEM) and surface-sensitive X-ray diffraction. Ag nanoislands are grown under various surface t…
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Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and interfaces has been carried out using transmission electron microscopy (TEM) and surface-sensitive X-ray diffraction. Ag nanoislands are grown under various surface treatments using thermal evaporation in high vacuum conditions. Irradiation has been carried out with 1.5 MeV Au^{2+} ions at various fluences and impact angles. Selected area electron diffraction (SAED) and lattice imaging (using TEM) has been used to determine the strain at surface and interfaces. Preliminary results on the use of surface-sensitive asymmetric x-ray Bragg reflection method have been discussed. The TEM results directly indicate a contraction in the silicon lattice due to ion-induced effects. The nanoislands have shadowed the ion beam resulting in lesser strain beneath the island structures in silicon substrates. High-resolution lattice imaging has also been used to determine the strain in around amorphization zones caused by the ion irradiation.
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Submitted 4 March, 2005;
originally announced March 2005.
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Ion Irradiation Induced Effects in Metal Nanostructures
Authors:
B. Satpati,
P. V. Satyam,
T. Som,
B. N. Dev
Abstract:
High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films (~2 nm) are prepared by thermal evaporation under high vacuum condition at room temperature (RT). These films were irradiated with MeV Au ions also at RT. Very…
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High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films (~2 nm) are prepared by thermal evaporation under high vacuum condition at room temperature (RT). These films were irradiated with MeV Au ions also at RT. Very thin films of Au and Ag deposited on silicon substrates (with native oxide) form isolated nano-island structures due to the non-wetting nature of Au and Ag. Ion irradiation causes embedding of these nanoislands into the substrate. For Ag nanoislands with diameter 15 - 45 nm, the depth of the embedding increases with ion fluence and the nano particles are fully submerged into Si and SiO$_2$ substrate at a fluence of 5*10^14 ions /cm^2 without any mixing. Au nanoparticles (diameter 6 - 20 nm), upon ion irradiation, forms embedded gold-silicide in the case of Si substrate and show lack of mixing and silicide formation in the case of SiO2 substrate system.
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Submitted 1 March, 2005;
originally announced March 2005.
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Energy dependent sputtering of nano-clusters from a nanodisperse target and embedding of nanoparticles into a substrate
Authors:
B. Satpati,
J. Ghatak,
B. Joseph,
P. V. Satyam,
T. Som,
D. Kabiraj,
B. N. Dev
Abstract:
Au nanoparticles, prepared by thermal evaporation under high vacuum condition on Si substrate, are irradiated with Au ions at different ion energies. During ion irradiation, embedding of nanoparticles as well as ejection of nano-clusters is observed. Ejected particles (usually smaller than those on the Si substrate) due to sputtering are collected on carbon-coated transmission electron microscop…
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Au nanoparticles, prepared by thermal evaporation under high vacuum condition on Si substrate, are irradiated with Au ions at different ion energies. During ion irradiation, embedding of nanoparticles as well as ejection of nano-clusters is observed. Ejected particles (usually smaller than those on the Si substrate) due to sputtering are collected on carbon-coated transmission electron microscopy (TEM) grids. Both the TEM grids and the ion-irradiated samples are analyzed with TEM. Unirradiated as well as irradiated samples are also analyzed by Rutherford backscattering spectrometry (RBS). In the case of low energy (32 keV) ions, where the nuclear energy loss is dominant, both sputtering and embedding are less compared to medium energy (1.5 MeV). In the high energy regime (100 MeV), where the electronic energy loss is dominant, sputtering is maximum but practically there is no embedding. Ion bombardment of surfaces at an angle with respect to the surface-normal produces enhanced embedding compared to normal-incidence bombardment. The depth of embedding increases with larger angle of incidence. Au nanoparticles after ion irradiation form embedded gold-silicide. Size distribution of the sputtered Au clusters on the TEM grids for different ion energy regimes are presented.
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Submitted 27 February, 2005;
originally announced February 2005.
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Ion-beam induced 1D to 3D periodic transformation in nanostructured multilayers
Authors:
S. Bera,
B. Satpati,
K. Bhattacharjee,
P. V. Satyam,
B. N. Dev
Abstract:
Ion-irradiation-induced modifications of a periodic Pt/C multilayer system containing Fe impurity have been analyzed by transmission electron microscopy (TEM). The multilayer stack with 16 Pt/C layer pairs (period 4.23 nm) was fabricated on a glass substrate. A 2 MeV Au$^{2+}$ ion beam was rastered on the sample to obtain uniformly irradiated strips with fluences from 1$\times10^{14}$ to 1…
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Ion-irradiation-induced modifications of a periodic Pt/C multilayer system containing Fe impurity have been analyzed by transmission electron microscopy (TEM). The multilayer stack with 16 Pt/C layer pairs (period 4.23 nm) was fabricated on a glass substrate. A 2 MeV Au$^{2+}$ ion beam was rastered on the sample to obtain uniformly irradiated strips with fluences from 1$\times10^{14}$ to 1$\times10^{15}$ $ions/cm^2$. Ion-irradiation has been found to cause preferential migration of Fe towards Pt layers [Nucl. Instr. Methods Phys. Res. B212 (2003) 530]. Cross-sectional transmission electron microscopy (XTEM) shows considerable atomic redistribution for irradiation at the highest ion fluence (1$\times10^{15}$ $ions/cm^2$). Individual entities in this structure is like a cluster. Periodic multilayers have periodicity only in the direction normal to the multilayer surface. However, Fourier transform of the XTEM images of the sample irradiated at the highest-fluence shows new off-normal Fourier components of superlattice periodicities arising due to ion irradiation. With a proper understanding of this phenomenon it may be possible to fabricate three dimensional periodic structures of nanoclusters.
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Submitted 12 January, 2005;
originally announced January 2005.
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Electron and Phonon Confinement and New Surface Phonon Modes in CdSe-CdS Core-Shell Nanocrystals
Authors:
A. Singha,
B. Satpati,
P. V. Satyam,
Anushree Roy
Abstract:
Optical and vibrational properties of bare and CdS shelled CdSe nanocrystalline particles are investigated. To confirm the formation of such nanocrystals in our samples we estimate their average particle sizes and size distributions using TEM measurements. From the line profile analysis of the images the core-shell structure in the particles has been confirmed. The blue shift in optical absorpti…
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Optical and vibrational properties of bare and CdS shelled CdSe nanocrystalline particles are investigated. To confirm the formation of such nanocrystals in our samples we estimate their average particle sizes and size distributions using TEM measurements. From the line profile analysis of the images the core-shell structure in the particles has been confirmed. The blue shift in optical absorption spectra, analyzed using theoretical estimates based on the effective bond order model, establishes the electron confinement in the nanoparticles. Unique characteristics of the nanocrystals (which are absent in the corresponding bulk material), such as confinement of optical phonons and the appearance of surface phonons, are then discussed. Making use of the dielectric response function model we are able to match the experimental and theoretical values of the frequencies of the surface phonons. We believe that our studies using optical probes provide further evidence on the existence of core-shell structures in CdSe-CdS type materials.
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Submitted 9 September, 2004;
originally announced September 2004.
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Growth of silver nanoclusters embedded in soda glass matrix
Authors:
P. Gangopadhyay,
P. Magudapathy,
R. Kesavamoorthy,
B. K. Panigrahi,
K. G. M. Nair,
P. V. Satyam
Abstract:
Temperature-controlled-growth of silver nanoclusters in soda glass matrix is investigated by low-frequency Raman scattering spectroscopy. Growth of the nanoclusters is ascribed to the diffusion-controlled precipitation of silver atoms due to annealing the silver-exchanged soda glass samples. For the first time, Rutherford backscattering measurements performed in this system to find out activatio…
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Temperature-controlled-growth of silver nanoclusters in soda glass matrix is investigated by low-frequency Raman scattering spectroscopy. Growth of the nanoclusters is ascribed to the diffusion-controlled precipitation of silver atoms due to annealing the silver-exchanged soda glass samples. For the first time, Rutherford backscattering measurements performed in this system to find out activation energy for the diffusion of silver ions in the glass matrix. Activation energy for the diffusion of silver ions in the glass matrix estimated from different experimental results is found to be consistent.
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Submitted 13 April, 2004;
originally announced April 2004.
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Height preference and strain in Ag islands on Si(111)-(7x7)
Authors:
D. K. Goswami,
K. Bhattacharjee,
B. Satpati,
S. Roy,
G. Kuri,
P. V. Satyam,
B. N. Dev
Abstract:
Growth and strain behavior of thin Ag films on Si substrate have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution x-ray diffraction studies. Ag islands formed on Si at room temperature growth show strongly preferred heights and flat top. At low coverage, islands containing two atomic layers of Ag are overwhelmingly formed. A…
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Growth and strain behavior of thin Ag films on Si substrate have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution x-ray diffraction studies. Ag islands formed on Si at room temperature growth show strongly preferred heights and flat top. At low coverage, islands containing two atomic layers of Ag are overwhelmingly formed. At higher coverages island height distribution shows strong peaks at relative heights corresponding to an even number of Ag atomic layers. This appears to be a quantum size effect. Hexagonal disc-like islands with flat top are formed upon annealing. The annealed film shows two closely-spaced Ag(111) diffraction peaks - one weak and broad and the other narrow and more intense. The intense peak corresponds to a shorter Ag(111) planar spacing compared to the bulk value. This can be explained in terms of changes in the Ag lattice during the heating-cooling cycle due to thermal expansion coefficient mismatch between Ag and Si.
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Submitted 21 November, 2003;
originally announced November 2003.
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Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111)
Authors:
K. Sekar,
G. Kuri,
P. V. Satyam,
B. Sundaravel,
D. P. Mahapatra,
B. N. Dev
Abstract:
Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trapezoid. The island…
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Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trapezoid. The island edges are aligned along $Si[110]$ directions. We have observed elongated islands with aspect ratios as large as 8:1. These islands, instead of growing along three equivalent [110] directions on the Si(111) substrate, grow only along one preferential direction. This has been attributed to the vicinality of the substrate surface.
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Submitted 1 July, 1994;
originally announced July 1994.
