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Staggered Dzyaloshinskii-Moriya inducing weak ferromagnetism in centrosymmetric altermagnets and weak ferrimagnetism in noncentrosymmetric altermagnets
Authors:
Carmine Autieri,
Raghottam M Sattigeri,
Giuseppe Cuono,
Amar Fakhredine
Abstract:
The Dzyaloshinskii-Moriya interaction (DMI) has explained successfully the weak ferromagnetism in {\it some} centrosymmetric antiferromagnets. However, in the last years, it was generally claimed that the DMI is not effective in such systems. We reconciled these views by separating the conventional antiferromagnets from altermagnets. Altermagnets are collinear magnets having zero magnetization pre…
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The Dzyaloshinskii-Moriya interaction (DMI) has explained successfully the weak ferromagnetism in {\it some} centrosymmetric antiferromagnets. However, in the last years, it was generally claimed that the DMI is not effective in such systems. We reconciled these views by separating the conventional antiferromagnets from altermagnets. Altermagnets are collinear magnets having zero magnetization preserved by crystal symmetries in the non-relativistic limit. The spin-up and spin-down sublattices can be connected either by a proper rotation or by a combination of a rotation and a mirror or an inversion symmetry. Consequently, the system shows even-parity wave spin order in the k-space lifting the Kramer's degeneracy in the non-relativistic band structure leading to unconventional magnetism. The DMI can create weak ferromagnetism or weak ferrimagnetism in centrosymmetric and in noncentrosymmetric altermagnets while it is not effective in conventional antiferromagnets. Once the spin-orbit coupling is included in an altermagnetic system (where the time-reversal symmetry is broken), the components of spin moments of the two sublattices along the Néel vector are antiparallel but the other two spin components orthogonal to the Néel vector can be null, parallel or antiparallel. In cases where we have different bands showing parallel and antiparallel spin components at the same time, the magnetic order results in weak ferrimagnetism. If we restrain to high-symmetry directions for the Néel vector, we find weak ferrimagnetism only in the noncentrosymmetric compound MnSe among the examined cases.
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Submitted 10 August, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Dirac surface states, multiorbital dimerization and superconductivity in Nb- and Ta-based A15 compounds
Authors:
Raghottam M. Sattigeri,
Giuseppe Cuono,
Ghulam Hussain,
Xing Ming,
Angelo Di Bernardo,
Carmine Attanasio,
Mario Cuoco,
Carmine Autieri
Abstract:
Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level en…
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Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level enhancing the amplitude of the spin Hall conductance. Indeed, despite the moderate spin-orbit of the Nb-compounds, a large spin Hall effect is also obtained in Nb$_3$Ge and Nb$_3$Sn compounds. We show that the Coulomb interaction opens the gap at the R point thus making more evident the occurrence of Dirac surface states. We then investigate the superconducting properties by determining the strength of the electron-phonon BCS coupling. The evolution of the critical temperature is tracked down to the 2D limit indicating a reduction of the transition temperature which mainly arises from the suppression of the density of states at the Fermi level. Finally, we propose a minimal tight-binding model based on three coupled Su-Schrieffer-Heeger chains with t$_{2g}$ Ta- and Nb-orbitals reproducing the spin-orbit splittings at the R point among the $π$-bond bands in this class of compounds. We separate the kinetic parameters in $π$ and $δ$-bonds, in intradimer and interdimer hoppings and discuss their relevance for the topological electronic structure. We point out that Nb$_3$Ge might represent a Z$_2$ topological metal with the highest superconducting temperature ever recorded.
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Submitted 25 March, 2025; v1 submitted 27 October, 2023;
originally announced October 2023.
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Interplay between altermagnetism and nonsymmorphic symmetries generating large anomalous Hall conductivity by semi-Dirac points induced anticrossings
Authors:
Amar Fakhredine,
Raghottam M. Sattigeri,
Giuseppe Cuono,
Carmine Autieri
Abstract:
We investigate the interplay between altermagnetic spin-splitting and nonsymmorphic symmetries using the space group no. 62 as a testbed. Studying different magnetic orders by means of first-principles calculations, we find that the altermagnetism (AM) is present in the C-type magnetic configuration while it is absent for the G-type and A-type configurations due to different magnetic space group t…
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We investigate the interplay between altermagnetic spin-splitting and nonsymmorphic symmetries using the space group no. 62 as a testbed. Studying different magnetic orders by means of first-principles calculations, we find that the altermagnetism (AM) is present in the C-type magnetic configuration while it is absent for the G-type and A-type configurations due to different magnetic space group types. The nonsymmorphic symmetries constrain the system to a four-fold degeneracy at the border of the Brillouin zone with semi-Dirac dispersion. In the case of large hybridization as for transition metal pnictides, the interplay between AM and nonsymmorphic symmetries generates an intricate network of several crossings and anticrossings that we describe in terms of semi-Dirac points and glide symmetries. When we add the spin-orbit coupling (SOC), we find a Neel-vector dependent spin-orbit splitting at the time-reversal invariant momenta points since the magnetic space groups depend on the Neel vector. The magnetic space group type-I produces antiferromagnetic hourglass electrons that disappear in the type-III. When the Neel vector is along x, we observe a glide-protected crossing that could generate a nodal-line in the altermagnetic phase. The SOC splits the remaining band crossings and band anticrossings producing a large anomalous Hall effect in all directions excluding the Neel-vector direction
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Submitted 7 September, 2023; v1 submitted 16 August, 2023;
originally announced August 2023.
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Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials
Authors:
Raghottam M Sattigeri,
Giuseppe Cuono,
Carmine Autieri
Abstract:
The altermagnetism influences the electronic states allowing the presence of non-relativistic spinsplittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface states will be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative spa…
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The altermagnetism influences the electronic states allowing the presence of non-relativistic spinsplittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface states will be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative space groups: tetragonal, orthorhombic and hexagonal. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on the magnetic order. We show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states.
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Submitted 25 July, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Orbital-selective altermagnetism and correlation-enhanced spin-splitting in transition metal oxides
Authors:
Giuseppe Cuono,
Raghottam M. Sattigeri,
Jan Skolimowski,
Carmine Autieri
Abstract:
We investigate the altermagnetic properties of strongly-correlated transition metal oxides considering the family of the quasi two-dimensional A2BO4 and three-dimensional ABO3. As a test study, we analyze the Mott insulators Ca2RuO4 and YVO3. In both cases, the orbital physics is extremely relevant in the t2g subsector with the presence of an orbital-selective Mott physics in the first case and of…
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We investigate the altermagnetic properties of strongly-correlated transition metal oxides considering the family of the quasi two-dimensional A2BO4 and three-dimensional ABO3. As a test study, we analyze the Mott insulators Ca2RuO4 and YVO3. In both cases, the orbital physics is extremely relevant in the t2g subsector with the presence of an orbital-selective Mott physics in the first case and of a robust orbital-order in the second case. Using first-principles calculations, we show the presence of an orbital-selective altermagnetism in the case of Ca2RuO4. In the case of YVO3, we study the altermagnetism as a function of the magnetic ordering and of the Coulomb repulsion U. We find that the altermagnetism is present in all magnetic orders with the symmetries of the Brillouin zone depending on the magnetic order. Finally, the Coulomb repulsion enhances the non-relativistic spin-splitting making the strongly-correlated systems an exciting playground for the study of the altermagnetism.
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Submitted 30 June, 2023;
originally announced June 2023.
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Ab-initio overestimation of the topological region in Eu-based compounds
Authors:
Giuseppe Cuono,
Raghottam M. Sattigeri,
Carmine Autieri,
Tomasz Dietl
Abstract:
An underestimation of the fundamental band gap values by the density functional theory within the local density approximation and associated approaches is a well-known challenge of ab-initio electronic structure computations. Motivated by recent optical experiments [D. Santos-Cottin et al., arXiv:2301.08014], we have revisited first-principle results obtained earlier for EuCd2As2 and extended the…
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An underestimation of the fundamental band gap values by the density functional theory within the local density approximation and associated approaches is a well-known challenge of ab-initio electronic structure computations. Motivated by recent optical experiments [D. Santos-Cottin et al., arXiv:2301.08014], we have revisited first-principle results obtained earlier for EuCd2As2 and extended the computational studies to the whole class of systems EuCd2X2 (X = P, As, Sb, Bi), to EuIn2X2 (X = P, As, Sb), and to nonmagnetic AEIn2As2 (AE= Ca, Sr, Ba) employing a hybrid functional method. We find that our approach provides the magnitude of the energy gap for EuCd2As2 in agreement with the experimental value. Actually, our results indicate that EuSn2As2, BaIn2As2, EuCd2Bi2 and EuCd2SbBi are robust topological insulators, while all other compounds are topologically trivial semiconductors. The trivial band gaps of EuCd2P2, EuCd2As2 and EuCd2Sb2 are in the range of 1.38-1.48 eV, 0.72-0.79 eV and 0.46-0.49 eV, respectively. The topologically trivial Eu-based systems are antiferromagnetic semiconductors with a strong red shift of the energy gap in a magnetic field caused by the exchange coupling of the band states to spins localized on the 4f-shell of Eu ions. Additionally, the EuIn2X2 (X = P, As) compounds show altermagnetic exchange-induced band spin-splitting, particularly noticeable in the case of states derived from 5d-Eu orbitals.
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Submitted 23 August, 2023; v1 submitted 18 May, 2023;
originally announced May 2023.
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Correlation-driven topological transition in Janus VSiGeP2As2
Authors:
Ghulam Hussain,
Amar Fakhredine,
Rajibul Islam,
Raghottam M. Sattigeri,
Carmine Autieri,
Giuseppe Cuono
Abstract:
The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the s…
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The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 (Z=P, As) and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi2P4 (VSi2As4), while in-plane magnetization for VSiGeP2As2. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP2As2. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials.
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Submitted 14 February, 2023; v1 submitted 10 February, 2023;
originally announced February 2023.
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Non-trivial topological phases in transition metal rich half-Heusler Oxides
Authors:
Bhautik R Dhori,
Raghottam M Sattigeri,
Prafulla K Jha
Abstract:
Topological Insulators with gapless surface states and insulating bulk in non-centrosymmetric cubic systems have been extensively explored following the discovery of two-dimensional quantum spin hall effect in zincblende HgTe. In such systems the negative band inversion strength E$_{BIS}$ ($=$ E$_{Γ_6} -$ E$_{Γ_8} <$ 0) governs the robustness of the non-trivial topological states at ambient condit…
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Topological Insulators with gapless surface states and insulating bulk in non-centrosymmetric cubic systems have been extensively explored following the discovery of two-dimensional quantum spin hall effect in zincblende HgTe. In such systems the negative band inversion strength E$_{BIS}$ ($=$ E$_{Γ_6} -$ E$_{Γ_8} <$ 0) governs the robustness of the non-trivial topological states at ambient conditions. Hence, realizing large negative values of E$_{BIS}$ has been a guiding motivation of several investigations reported in literature. Here, we present a material design approach which can be employed to realize large negative values of E$_{BIS}$ in cubic materials such as half-Heusler (HH) oxides with 18 valence electron configurations. We explore 27 HH oxides of the form ABO (A = Li, K, Rb; B = Cu, Ag, Au) in $α$-, $β$-, and $γ$-phase (by placing transition metal atom at different Wyckoff positions) for their non-trivial topological phase. Off these three phases, we found that, the $α$-phase of nine HH oxides (wherein the transition metal atoms occupy 4a Wyckoff positions in the crystal structure) is the most promising with non-trivial topological phase which is governed by the mass-darwin relativistic effects enhancing E$_{BIS}$. Whereas the other phases were found to be either trivial semiconductors or semimetals or metals and most of them being dynamically unstable. We focus on RbAuO in $α$-phase with E$_{BIS}$ of $-$ 1.29 eV and the effect of strain fields on the topological surface states of this compound. We conclude that the $α$-phase of HH oxide presented here can be synthesized experimentally for diverse room temperature applications in spintronics and nanoelectronics.
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Submitted 25 July, 2023; v1 submitted 22 June, 2022;
originally announced June 2022.
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Two dimensional LiMgAs; a novel Topological Quantum Catalyst for Hydrogen Evolution Reaction
Authors:
Raghottam M. Sattigeri,
Prafulla K. Jha,
Piotr Śpiewak and,
Krzysztof J. Kurzydłowski
Abstract:
Quantum materials such as Topological Insulators (TI) have been promising due to diverse applications of their robust surface/edge states in the bulk (3D) and two-dimensional (2D) regime. Such conducting surface states in 3D systems, host "\textit{electron bath}" which are known to facilitate catalysis. However, the analogous effects in 2D scenarios wherein, conducting helical edge states giving r…
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Quantum materials such as Topological Insulators (TI) have been promising due to diverse applications of their robust surface/edge states in the bulk (3D) and two-dimensional (2D) regime. Such conducting surface states in 3D systems, host "\textit{electron bath}" which are known to facilitate catalysis. However, the analogous effects in 2D scenarios wherein, conducting helical edge states giving rise to Fermionic accumulation has been scarcely addressed. Using density functional theory based \textit{first-principles} calculations, we demonstrate that, the conducting edge states in 2D TI such as LiMgAs can be exploited to facilitate excellent catalytic response towards Hydrogen evolution reactions. The Gibbs free energy in such cases was found to be as low as $-$0.02 eV which is quite superior as compared to other materials reported in literature. The concept presented herein can be extended to other well known 2D TI and used to realise novel topological quantum catalysts for ultra-high performance and efficient catalytic applications.
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Submitted 19 April, 2022;
originally announced April 2022.
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Functionalized Tellurene; a candidate large-gap 2D Topological Insulator
Authors:
Raghottam M. Sattigeri,
Prafulla K. Jha
Abstract:
The discovery of group IV and V elemental Xene's which exhibit topologically non-trivial characters natively in their honeycomb lattice structure (HLS) has led to extensive efforts in realising analogous behaviour in group VI elemental monolayers. Although; it was theoretically concluded that group VI elemental monolayers cannot exist as HLS but recent experimental evidence suggests otherwise. In…
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The discovery of group IV and V elemental Xene's which exhibit topologically non-trivial characters natively in their honeycomb lattice structure (HLS) has led to extensive efforts in realising analogous behaviour in group VI elemental monolayers. Although; it was theoretically concluded that group VI elemental monolayers cannot exist as HLS but recent experimental evidence suggests otherwise. In this letter we report that, HLS of group VI elemental monolayer (such as, Tellurene) can be realised to be dynamically stable when functionzalised with Oxygen. The functionalization leads to, peculiar orbital filtering effects (OFE) and broken spatial inversion symmetry which gives rise to the non-trivial topological character. The exotic quantum behaviour of this system is characterized by, spin-orbit coupling induced large-gap $\approx$ 0.36 eV with isolated Dirac cone along the edges indicating perspective room temperature spin-transport applications. Further investigations of spin Hall conductivity and the Berry curvatures unravel high conductivity as compared to previously explored Xene's. The non-trivial topological character is quantified in terms of the $\mathbb{Z}_2$ invaraint as $ν=$ 1 and Chern number $\mathit{C} =$ 1. Also, for practical purposes, we report that, \textit{h}BN/TeO/\textit{h}BN quantum-wells can be strain engineered to realize a sizable non-trivial gap ($\approx$ 0.11 eV). We finally conclude that, functionalization of group VI elemental monolayer with Oxygen gives rise to, exotic quantum properties which are robust against surface oxidation and degradations while providing viable electronic degrees of freedom for spintronic applications.
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Submitted 16 September, 2021;
originally announced September 2021.
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A first-principles investigation of pressure induced topological phase transition in Half-Heusler AgSrBi
Authors:
Bhautik R. Dhori,
Raghottam M. Sattigeri,
Prafulla K. Jha and,
Dominik Kurzydlowski
Abstract:
Topological Insulators (TI) are materials with novel quantum states which exhibit a bulk insulating gap while the edge/surface is conducting. This has been extensively explored in several Half-Heusler (HH) compounds hosting the exotic TI behaviour. In the present work we employ, first-principles based Density Functional Theory to perform thorough investigations of pressure induced topological phas…
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Topological Insulators (TI) are materials with novel quantum states which exhibit a bulk insulating gap while the edge/surface is conducting. This has been extensively explored in several Half-Heusler (HH) compounds hosting the exotic TI behaviour. In the present work we employ, first-principles based Density Functional Theory to perform thorough investigations of pressure induced topological phase transition (TPT) in HH AgSrBi which belongs to the F-43m space group. AgSrBi is intrinsically semi-metallic in nature which, under isotropic pressure exhibits semi-metal to trivial insulator transition retaining the cubic symmetry whereas, on breaking the cubic symmetry we observe the much sought after non-trivial semi-metal to TI phase transition. We also explore the effect of lowering crystal symmetry in realizing TI nature. Following this we perform qualitative analysis of the electronic properties to understand the origin of this non-trivial behavior followed by the quantitative analysis of the Z$_2$ classification which indicates that AgSrBi is a strong TI (i.e., Z$_2$ = (1, 101)). We thus, propose AgSrBi as a dynamically stable TI which can be used as ultra-thin films thermoelectric and nanoelectronic applications.
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Submitted 2 September, 2021;
originally announced September 2021.
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A first-principles investigation of Topological Phase Transition in face-centred cubic LiMgBi
Authors:
Raghottam M Sattigeri,
Sharad Babu Pillai,
Prafulla K Jha,
Brahmananda Chakraborty
Abstract:
Topological Insulators (TI) exhibit robust spin-locked dissipationless Fermion transport along the surface states. In the current study, we use \textit{first-principles} calculations to investigate a Topological Phase Transition (TPT) in a Half-Heusler (HH) compound LiMgBi driven by a Volume Expansive Pressure (VEP) which is attributed to the presence of, intrinsic voids, thermal perturbations and…
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Topological Insulators (TI) exhibit robust spin-locked dissipationless Fermion transport along the surface states. In the current study, we use \textit{first-principles} calculations to investigate a Topological Phase Transition (TPT) in a Half-Heusler (HH) compound LiMgBi driven by a Volume Expansive Pressure (VEP) which is attributed to the presence of, intrinsic voids, thermal perturbations and/or due to a phenomena known as cavity nuclei. We find that, the dynamically stable \textit{face-centred cubic} (FCC) structure of LiMgBi (which belongs to the F$\overline{4}$3m[216] space group), undergoes TPT beyond a critical VEP at 4.0\%. The continuous application of VEP from 0.0\% to 8.0\% results in a phase transition from a, band insulator to a Dirac semi-metal nature. Qualitatively, the Dirac cone formation and band inversion along the high symmetry point $\mathbfΓ$ in the Brillouin Zone (BZ) are analysed in terms of Electronic Band Structure (EBS) and Projected Local Density of States (LDOS). The TPT is further characterised by the $\mathbb{Z}_2$ invariant, ($ν_0$, $ν_1$ $ν_2$ $ν_3$) $\equiv$ (1, 0 0 0) along the (0001) surface which indicates quantitatively that, HH LiMgBi is a strong TI. We hence propose, HH LiMgBi (known for its piezoelectric, thermo-electric and semi-conducting applications) as a strong TI with potential multipurpose application in the field of electronics, spintronics and quantum computation.
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Submitted 22 August, 2019; v1 submitted 24 May, 2019;
originally announced May 2019.
