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Stable partial dislocation complexes in GaN as charge carrier lifetime modifiers for terahertz device applications by molecular dynamics and first-principle simulations
Authors:
Andrey Sarikov,
Ihor Kupchak
Abstract:
Wurtzite GaN is a promising material for applications in photoconductive THz radiation sources. For this purpose, the photogenerated charge carriers lifetime of the order of tenths of picoseconds is required. A controllable lifetime reduction may be considered to achieve by creating recombination active stable dislocation complexes formed by mobile basal-plane Shockley partial dislocations (PDs).…
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Wurtzite GaN is a promising material for applications in photoconductive THz radiation sources. For this purpose, the photogenerated charge carriers lifetime of the order of tenths of picoseconds is required. A controllable lifetime reduction may be considered to achieve by creating recombination active stable dislocation complexes formed by mobile basal-plane Shockley partial dislocations (PDs). In this work, formation pathways and stability of PD complexes in basal planes of wurzite GaN are studied by molecular dynamics (MD) simulations. The simulations reveal the formation of stable complexes by attractive interaction of two 30° or two 90° PDs with opposite Burgers vectors located in consecutive (0001) planes. Ones formed, these complexes change neither their positions, not the atomic configurations during simulated anneal at 1500 K up to the times of 5 ns. The MD results are used as an input for density functional theory calculations to refine the atomic structures of the complex cores and to investigate their electronic properties. The calculated band structures of GaN with 30°-30° and 90°-90° dislocation complexes indicate localized energy levels in the band gap near the top of the valence band and the conduction band bottom. The calculations of the partial electronic states density confirm the possibility of electron-hole recombination between the states localized at the PD complex cores. These recombination characteristics are distinctly reflected in the calculated absorption spectra. We conclude that creating such PD complexes in required concentration may be a tool for tailoring the recombination properties of wurtzite GaN for THz radiation generation applications.
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Submitted 6 May, 2025;
originally announced May 2025.
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Optical studies of melanin films as a material for solar light absorbers
Authors:
T. Obukhova,
M. Semenenko,
M. Dusheiko,
S. Davidenko,
Ye. S. Davidenko,
S. S. Davidenko,
S. Malyuta,
S. Shahan,
O. S. Pylypchuk,
P. Mochuk,
M. Voitovych,
T. Kuzmenko,
A. Sarikov
Abstract:
This study investigates optical and electrical properties of thin melanin films self-organized grown from water solutions of eumelanin extracted from edible plants. The melanin films exhibit the characteristics of a transparent low conductive polymer with stable in time electrical parameters. The films demonstrate indirect allowed optical transitions, an optical band gap E_g = 1.7 eV and a phonon…
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This study investigates optical and electrical properties of thin melanin films self-organized grown from water solutions of eumelanin extracted from edible plants. The melanin films exhibit the characteristics of a transparent low conductive polymer with stable in time electrical parameters. The films demonstrate indirect allowed optical transitions, an optical band gap E_g = 1.7 eV and a phonon energy {\hbar ω} = 0.185 eV as well as a high absorption coefficient in the ultraviolet range, which highlight the film potential for applications as light-absorbing layers in photovoltaic solar energy converters. Analysis of infrared transmission spectra evidences presence of a significant amount of OH groups in the films, pointing to their hydrophilicity, which may have an effect on the film electrical conductivity. It is hypothesized as well that the ratio of sp^3 to sp^2 hybridized CH_n bonds influences the films' optical and electrical properties and that higher concentration of the sp^2 bonds may increase the conductivity due to the enhanced π-electron delocalization.
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Submitted 10 December, 2024;
originally announced December 2024.
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In-plane selective area InSb-Al nanowire quantum networks
Authors:
Roy L. M. Op het Veld,
Di Xu,
Vanessa Schaller,
Marcel A. Verheijen,
Stan M. E. Peters,
Jason Jung,
Chuyao Tong,
Qingzhen Wang,
Michiel W. A. de Moor,
Bart Hesselmann,
Kiefer Vermeulen,
Jouri D. S. Bommer,
Joon Sue Lee,
Andrey Sarikov,
Mihir Pendharkar,
Anna Marzegalli,
Sebastian Koelling,
Leo P. Kouwenhoven,
Leo Miglio,
Chris J. Palmstrøm,
Hao Zhang,
Erik P. A. M. Bakkers
Abstract:
Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum tr…
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Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical gates of a topological quantum computer and require a network of nanowires. Here, we develop an in-plane selective-area growth technique for InSb-Al semiconductor-superconductor nanowire networks with excellent quantum transport properties. Defect-free transport channels in InSb nanowire networks are realized on insulating, but heavily mismatched InP substrates by 1) full relaxation of the lattice mismatch at the nanowire/substrate interface on a (111)B substrate orientation, 2) nucleation of a complete network from a single nucleation site, which is accomplished by optimizing the surface diffusion length of the adatoms. Essential quantum transport phenomena for topological quantum computing are demonstrated in these structures including phase-coherent transport up to 10 $μ$m and a hard superconducting gap accompanied by 2$e$-periodic Coulomb oscillations with an Al-based Cooper pair island integrated in the nanowire network.
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Submitted 11 March, 2021;
originally announced March 2021.
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Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires
Authors:
E. Scalise,
A. Sarikov,
L. Barbisan,
A. Marzegalli,
D. B. Migas,
F. Montalenti,
L. Miglio
Abstract:
The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable and popular one: growing hexagonal-diamond Si or Ge without working at extreme conditions proved not to be trivial. Recently, however, the possibility of growing hexagonal-diamond group-IV nanowires has been demonstrated,…
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The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable and popular one: growing hexagonal-diamond Si or Ge without working at extreme conditions proved not to be trivial. Recently, however, the possibility of growing hexagonal-diamond group-IV nanowires has been demonstrated, attracting attention on such systems. Based on first-principle calculations we show that the surface energy of the typical facets exposed in Si and Ge nanowires is lower in the hexagonal-diamond phase than in cubic ones. By exploiting a synergic approach based also on a recent state-of-the-art interatomic potential and on a simple geometrical model, we investigate the relative stability of nanowires in the two phases up to few tens of nm in radius, highlighting the surface-related driving force and discussing its relevance in recent experiments. We also explore the stability of Si and Ge core-shell nanowires with hexagonal cores (made of GaP for Si nanowires, of GaAs for Ge nanowires). In this case, the stability of the hexagonal shell over the cubic one is also favored by the energy cost associated with the interface linking the two phases. Interestingly, our calculations indicate a critical radius of the hexagonal shell much lower than the one reported in recent experiments, indicating the presence of a large kinetic barrier allowing for the enlargement of the wire in a metastable phase.
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Submitted 28 September, 2020;
originally announced September 2020.
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Origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach
Authors:
Emilio Scalise,
Luca Barbisan,
Andrey Sarikov,
Francesco Montalenti,
Leo Miglio,
Anna Marzegalli
Abstract:
3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to coexist. Overabundance of defects has so far limited the exploitation of 3C-SiC/Si for power electronics, in spite of its several ideal properties (mainly in terms of wide gap, high breakdown fields and thermal properties)…
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3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to coexist. Overabundance of defects has so far limited the exploitation of 3C-SiC/Si for power electronics, in spite of its several ideal properties (mainly in terms of wide gap, high breakdown fields and thermal properties) and the possibility of a direct integration in the Si technology. Here we use a multiscale approach, based on both classical molecular dynamics (MD) simulations and first-principle calculations, to investigate in-depth the origin, nature and properties of most common 3C-SiC/Si(001) extended defects. Our MD simulations reveal a natural path for the formation of partial dislocation complexes terminating both double and triple SF's. MD results are used as input for superior DFT calculations, allowing us to better determine the core structure and to investigate electronic properties. It turns out that the partial dislocation complexes terminating double and triple SFs are responsible for the introduction of electronic states significantly filling the gap. On the other hand, individual partial dislocations terminating single SFs only induce states very close to the gap edge. We conclude that partial dislocation complexes, in particular the most abundant triple ones, are killer defects in terms of favoring leakage currents. Suggestions coming from theory/simulations for devising a strategy to lower their occurrence are discussed.
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Submitted 21 February, 2020; v1 submitted 31 January, 2020;
originally announced January 2020.
