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Band tail formation in mono and multilayered transition metal dichalcogenides: A detailed assessment and a quick-reference guide
Authors:
Prasad Sarangapani,
James Charles,
Tillmann Kubis
Abstract:
Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential decay of electronic density of states into the bandgap, i.e. the band tail has a strong impact on the performance of TMD applications. In this work, the band tails of various TMD monolayer and multilayer systems when pl…
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Transition metal dichalcogenides (TMDs) are promising candidates for a wide variety of ultrascaled electronic, quantum computation, and optoelectronic applications. The exponential decay of electronic density of states into the bandgap, i.e. the band tail has a strong impact on the performance of TMD applications. In this work, the band tails of various TMD monolayer and multilayer systems when placed on various dielectric substrates is predicted with density functional theory based nonequilibrium Green's functions. Nonlocal scattering of electrons on polar optical phonons, charged impurities and remote scattering on phonons in the dielectric materials is included in the self-consistent Born approximation. The band tails are found to critically depend on the layer thickness, temperature, doping concentration and particularly on the chosen dielectric substrate. The underlying physical mechanisms are studied in high detail and an analytical interpolation formula is given to provide a quick-reference for Urbach parameters in $MoS_2$, $WS_2$ and $WSe_2$.
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Submitted 21 July, 2021;
originally announced July 2021.
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Introduction of Multi-particle Büttiker Probes -- Bridging the Gap between Drift Diffusion and Quantum Transport
Authors:
Kuang-Chung Wang,
Roberto Grassi,
Yuanchen Chu,
Shree Hari Sureshbabu,
Junzhe Geng,
Prasad Sarangapani,
Xinchen Guo,
Mark Townsend,
Tillmann Kubis
Abstract:
State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in opt…
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State-of-the-art industrial semiconductor device modeling is based on highly efficient Drift-Diffusion (DD) models that include some quantum corrections for nanodevices. In contrast, latest academic quantum transport models are based on the non-equilibrium Green's function (NEGF) method that cover all coherent and incoherent quantum effects consistently. Carrier recombination and generation in optoelectronic nanodevices represent an immense numerical challenge when solved within NEGF. In this work, the numerically efficient Büttiker-probe model is expanded to include electron-hole recombination and generation in the NEGF framework. Benchmarks of the new multiple-particle Büttiker probe method against state-of-the-art quantum-corrected DD models show quantitative agreements except in cases of pronounced tunneling and interference effects.
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Submitted 9 January, 2020;
originally announced January 2020.
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Non-equilibrium Green's function predictions of band tails and band gap narrowing in III-V semiconductors and nanodevices
Authors:
Prasad Sarangapani,
Yuanchen Chu,
James Charles,
Tillmann Kubis
Abstract:
High-doping induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-effect transistors (TFETs), Esaki diodes and light-emitting diodes. In this work, Urbach tails and band gap narrowing values are calculated explicitly for GaAs, InAs, GaSb and GaN as well as ultra-thin bodies and nanowir…
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High-doping induced Urbach tails and band gap narrowing play a significant role in determining the performance of tunneling devices and optoelectronic devices such as tunnel field-effect transistors (TFETs), Esaki diodes and light-emitting diodes. In this work, Urbach tails and band gap narrowing values are calculated explicitly for GaAs, InAs, GaSb and GaN as well as ultra-thin bodies and nanowires of the same. Electrons are solved in the non-equilibrium Green's function method in multi-band atomistic tight binding. Scattering on polar optical phonons and charged impurities is solved in the self-consistent Born approximation. The corresponding nonlocal scattering self-energies as well as their numerically efficient formulations are introduced for ultra-thin bodies and nanowires. Predicted Urbach band tails and conduction band gap narrowing agree well with experimental literature for a range of temperatures and doping concentrations. Polynomial fits of the Urbach tail and band gap narrowing as a function of doping are tabulated for quick reference.
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Submitted 16 April, 2019;
originally announced April 2019.
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Control of interlayer delocalization in 2H transition metal dichalcogenides
Authors:
Kuang-Chung Wang,
Teodor K. Stanev,
Daniel Valencia,
James Charles,
Alex Henning,
Vinod K. Sangwan,
Aritra Lahiri,
Daniel Mejia,
Prasad Sarangapani,
Michael Povolotskyi,
Aryan Afzalian,
Jesse Maassen,
Gerhard Klimeck,
Mark C. Hersam,
Lincoln J. Lauhon,
Nathaniel P. Stern,
Tillmann Kubis
Abstract:
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- ac…
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It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hopping. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.
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Submitted 15 September, 2017; v1 submitted 6 March, 2017;
originally announced March 2017.
