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Ultrafast core-to-core luminescence in BaF$_2$-LaF$_3$ single crystals
Authors:
Roman Shendrik,
Evgeny Radzhabov,
Alexandra Myasnikova,
Viktorija Pankratova,
Anatolijs Šarakovskis,
Alexander Nepomnyashchikh,
Alexander Bogdanov,
Veronika Gavrilenko,
Vladimir Pankratov
Abstract:
This study investigates the mechanisms underlying ultrafast cross-luminescence observed in BaF$_2$ crystals doped with LaF$_3$. We identified an ultrafast luminescent component with a decay time of approximately 150 ps, which emerges under excitation energies exceeding 24 eV as a novel radiative recombination process between electrons in the 5p core band of Ba2+ and holes in the 5p core band of La…
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This study investigates the mechanisms underlying ultrafast cross-luminescence observed in BaF$_2$ crystals doped with LaF$_3$. We identified an ultrafast luminescent component with a decay time of approximately 150 ps, which emerges under excitation energies exceeding 24 eV as a novel radiative recombination process between electrons in the 5p core band of Ba2+ and holes in the 5p core band of La$^{3+}$. Ab initio calculations support this hypothesis, showing that the energy levels of the core bands facilitate such transitions. The findings indicate that BaF$_2$-LaF$_3$ scintillators hold significant promise for applications in time-of-flight tomography.
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Submitted 5 December, 2024;
originally announced December 2024.
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Deposition and photoluminescence of zinc gallium oxide thin films with varied stoichiometry made by reactive magnetron co-sputtering
Authors:
Martins Zubkins,
Edvards Strods,
Viktors Vibornijs,
Anatolijs Sarakovskis,
Ramūnas Nedzinskas,
Reinis Ignatans,
Edgars Butanovs,
Juris Purans,
Andris Azens
Abstract:
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron co-sputtering from liquid/solid gallium/zinc targets onto fused quartz substrates; the temperature of the substrate is varied from room temperature (RT) to 800°C. The…
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This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron co-sputtering from liquid/solid gallium/zinc targets onto fused quartz substrates; the temperature of the substrate is varied from room temperature (RT) to 800°C. The sputtering process is effectively controlled by fixing the sputtering power of one of the targets and controlling the power of the other target by plasma optical emission spectroscopy. The method, in conjunction with oxygen flow adjustment, enables the production of near-stoichiometric films at any temperature used. The composition analysis suggests a few at.% oxygen deficiency in the films. The resulting deposition rate is at least an order of magnitude higher compared to the commonly used radio-frequency sputtering from a ceramic ZnO:Ga2O3 target. Deposited onto unheated substrates, the films with Ga:Zn {\approx} 2 are X-ray amorphous. Well-defined X-ray diffraction peaks of spinel ZnGa2O4 start to appear at a substrate temperature of 300°C. The surface of the as-deposited films is dense and exhibits a fine-featured structure observed in electron microscopy images. Increasing the deposition temperature from RT to 800°C eliminates defects and improves crystallinity, which for the films with Ga:Zn ratio close to 2 results in an increase in the optical band gap from 4.6 eV to 5.1 eV. Room temperature photoluminescence established the main peak at 3.1 eV (400 nm); a similar peak in Ga2O3 is ascribed to oxygen-vacancy related transitions. A prominent feature around 2.9 eV (428 nm) is attributed to self-activation center of the octahedral Ga-O groups in the spinel lattice of ZnGa2O4. It was found that photoluminescence from ZnGa2O4 depends significantly on the ratio Ga:Zn.
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Submitted 5 February, 2024;
originally announced February 2024.
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Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics
Authors:
H. Arslan,
I. Aulika,
A. Sarakovskis,
L. Bikse,
M. Zubkins,
A. Azarov,
J. Gabrusenoks,
J. Purans
Abstract:
An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition…
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An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (+/- 5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition region between β-Y2O3 and α-Y2O3, and accompanied by the crystalline Y2O3. Resulting from either the low energy separation between 4d and 5s orbitals and/or different spin states of the corresponding orbitals' sublevels, the stability of monoxide is most presumably self-limited by the size of the crystal in thermodynamic terms. This behavior develops a distortion in the structure of the crystal compared to the metal oxide cubic structure and it also effectuates the arrangement in nanocrystalline/amorphous phase. In addition to this, spectroscopic ellipsometry denotes that the semiconducting yttrium oxide has the dominant, mostly amorphous, formation character over crystalline Y2O3. Our purpose, by means of the current findings, is to advance the understanding of formation kinetics/conditions of yttrium with an unusual valency (2+).
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Submitted 11 May, 2023;
originally announced May 2023.
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Tailoring of rhenium oxidation state in ReOx thin films during reactive HiPIMS deposition process and following annealing
Authors:
M. Zubkins,
A. Sarakovskis,
E. Strods,
L. Bikse,
B. Polyakov,
A. Kuzmin,
V. Vibornijs,
J. Purans
Abstract:
Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium in a 6+ oxidation state. Here we present a novel approach for the deposition of ReOx (x = 1.6-2.9) thin films using reactive high power impulse magnetron sputter…
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Bulk rhenium trioxide (ReO3) has an unusually high electrical conductivity and, being nanosized, has promising catalytic properties. However, the production of pure ReO3 thin films is challenging due to the difficulty to stabilize rhenium in a 6+ oxidation state. Here we present a novel approach for the deposition of ReOx (x = 1.6-2.9) thin films using reactive high power impulse magnetron sputtering (r-HiPIMS) from a metallic rhenium target in a mixed Ar/O2 atmosphere. The thin films were deposited in the gas-sustained self-sputtering regime, observed during r-HiPIMS process according to current waveforms. The influence of the substrate temperature, the oxygen-to-argon flow ratio and post-annealing at 250 °C in the air for 3 h on the properties of the films were studied. The as-deposited films have an X-ray amorphous structure (a-ReOx) when deposited at room temperature while a nano-crystalline \b{eta}-ReO2 phase when deposited at elevated temperatures (150 or 250 °C). The amorphous a-ReOx can be converted into the crystalline ReO3 with a lattice parameter of 3.75 Å upon annealing in the air. The surface morphology of the films is dense without detectable voids when elevated substrate temperatures are used. Various Re oxidation states are observed on the surface of the films in different ratios depending on the deposition parameters. All samples exhibit electrical resistivity on the order of 10-3 Ohmxcm and optical properties typical for thin metallic films.
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Submitted 29 June, 2022;
originally announced June 2022.
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Optical properties of oxygen-containing yttrium hydride thin films during and after the deposition
Authors:
M. Zubkins,
I. Aulika,
E. Strods,
V. Vibornijs,
L. Bikse,
A. Sarakovskis,
G. Chikvaidze,
J. Gabrusenoks,
H. Arslan,
J. Purans
Abstract:
The synthesis of the photochromic YHO films is based on the oxidation of deposited yttrium hydride in ambient conditions. The actual state of the films during the deposition process, which is influenced by the deposition pressure and the oxidation caused by the residual gases, is not completely known. We report on the YHxOy thin films deposited by reactive pulsed-DC magnetron sputtering. Since the…
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The synthesis of the photochromic YHO films is based on the oxidation of deposited yttrium hydride in ambient conditions. The actual state of the films during the deposition process, which is influenced by the deposition pressure and the oxidation caused by the residual gases, is not completely known. We report on the YHxOy thin films deposited by reactive pulsed-DC magnetron sputtering. Since the visible light transmittance is closely related to the phase and chemical composition of the films, in-situ transmittance measurements during and after deposition are performed. Ex-situ spectroscopic ellipsometry is used to determine the optical constants of YHxOy throughout the film thickness. In order to obtain metallic YH2-x films, the densest possible structure with a high deposition rate is required, otherwise the films could already be partially transparent during the deposition. The transmittance is higher if deposition pressure is increased. This is because of the oxidation promoted by more porous growth of the microstructure that is observed at the surface and cross-section images of the films. The films exhibit a refractive index gradient perpendicular to the substrate surface, which is related to the porosity and variation of the chemical composition.
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Submitted 29 June, 2022;
originally announced June 2022.
