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Dual-Resonator Kinetic-Inductance Detector for Distinction between Signal and 1/f Frequency Noise
Authors:
N. Foroozani,
B. Sarabi,
S. H. Moseley,
T. Stevenson,
E. J. Wollack,
O. Noroozian,
K. D. Osborn
Abstract:
Astronomical Kinetic Inductance Detectors (KIDs), similar to quantum information devices, experience performance limiting noise from materials. In particular, 1/f (frequency) noise can be a dominant noise mechanism, which arises from Two-Level System defects (TLSs) in the circuit dielectrics and material interfaces. Here we present a Dual-Resonator KID (DuRKID), which is designed for improved sign…
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Astronomical Kinetic Inductance Detectors (KIDs), similar to quantum information devices, experience performance limiting noise from materials. In particular, 1/f (frequency) noise can be a dominant noise mechanism, which arises from Two-Level System defects (TLSs) in the circuit dielectrics and material interfaces. Here we present a Dual-Resonator KID (DuRKID), which is designed for improved signal to noise (or noise equivalent power) relative to 1/f-noise limited KIDs. We first show the DuRKID schematic, fabricated circuit, and we follow with a description of the intended operation, first measurements, theory, and discussion. The circuit consists of two superconducting resonators sharing an electrical capacitance bridge of 4 capacitors, each of which hosts TLSs. The device is intended to operate using hybridization of the modes, which causes TLSs to either couple to one mode or the other, depending upon which capacitor they reside in. In contrast, the intended KID signal is directed to an inductor, and due to hybridization this causes correlated frequency changes in both (hybridized) modes. Therefore, one can distinguish photon signal from TLS frequency noise. To achieve hybridization, a TiN inductor is current biased to allow tuning of one bare resonator mode into degeneracy with the other and measurements show that the intended resonator modes frequency tune and hybridize as expected. The interresonator coupling and unintentional coupling of the 2 resonators to transmission lines are also characterized in measurements. In the theory, based on a quantum-information-science modes, we calculate the 4-port S parameters and simulate the 1/f frequency noise of the device. The study reveals that the DuRKID can exhibit a large and fundamental performance advantage over 1/f-noise-limited KID detectors.
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Submitted 12 December, 2023; v1 submitted 23 February, 2022;
originally announced February 2022.
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Long-term drift of Si-MOS quantum dots with intentional donor implants
Authors:
Martin Rudolph,
Bahman Sarabi,
Roy Murray,
Malcolm S. Carrol,
Neil M. Zimmerman
Abstract:
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics in the form of transients and discrete jumps that are not dependent on the properti…
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Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics in the form of transients and discrete jumps that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a $1/f$ noise dependence, and a noise strength as low as $1~\mathrm{μeV/\sqrt{Hz}}$, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or $1/f$ noise.
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Submitted 23 January, 2018;
originally announced January 2018.
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Possible hundredfold enhancement in the direct magnetic coupling of a single atomic spin to a circuit resonator
Authors:
Bahman Sarabi,
Peihao Huang,
Neil M. Zimmerman
Abstract:
We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device consisting of a trilayer lumped-element superconducting resonator and a single donor implanted in enriched $^{28}$Si. The resonator impedance is significantly smaller than the practically achievable limit using prevalent c…
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We report on the challenges and limitations of direct coupling of the magnetic field from a circuit resonator to an electron spin bound to a donor potential. We propose a device consisting of a trilayer lumped-element superconducting resonator and a single donor implanted in enriched $^{28}$Si. The resonator impedance is significantly smaller than the practically achievable limit using prevalent coplanar resonators. Furthermore, the resonator includes a nano-scale spiral inductor to spatially focus the magnetic field from the photons at the location of the implanted donor. The design promises approximately two orders of magnitude increase in the local magnetic field, and thus the spin to photon coupling rate $g$, compared to the estimated coupling rate to the magnetic field of coplanar transmission-line resonators. We show that by using niobium (aluminum) as the resonator's superconductor and a single phosphorous (bismuth) atom as the donor, a coupling rate of $g/2π$=0.24 MHz (0.39 MHz) can be achieved in the single photon regime. For this hybrid cavity quantum electrodynamic system, such enhancement in $g$ is sufficient to enter the strong coupling regime.
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Submitted 2 July, 2018; v1 submitted 7 February, 2017;
originally announced February 2017.
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Evidence for universal relationship between the measured 1/f permittivity noise and loss tangent created by tunneling atoms
Authors:
A. N. Ramanayaka,
B. Sarabi,
K. D. Osborn
Abstract:
Noise from atomic tunneling systems (TSs) limit the performance of various resonant devices, ranging in application from astronomy detectors to quantum computing. Using devices containing these TSs, we study the $1/f$ permittivity noise and loss tangent in two film types containing different TS densities. The noise reveals an intrinsic value as well as the crossover to power-saturated noise. The i…
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Noise from atomic tunneling systems (TSs) limit the performance of various resonant devices, ranging in application from astronomy detectors to quantum computing. Using devices containing these TSs, we study the $1/f$ permittivity noise and loss tangent in two film types containing different TS densities. The noise reveals an intrinsic value as well as the crossover to power-saturated noise. The intrinsic $1/f$ noise fits to the temperature dependence $1/T^{1+μ}$ where $0.2\leμ\le0.7$, which is related to previous studies and strongly interacting TS. An analysis of the noise normalized by the loss tangent and temperature is quantitatively identical for two film types, despite a factor of 5 difference in their loss tangent. Following from the broad applicability of the TS model, the data supports a universal relationship for amorphous-solid produced permittivity noise. The quantity of the observed noise particularly supports a recent model in which noise is created by weak TS-TS interactions.
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Submitted 21 July, 2015;
originally announced July 2015.
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Projected dipole moments of individual two-level defects extracted using circuit quantum electrodynamics
Authors:
Bahman Sarabi,
Aruna N. Ramanayaka,
Alexander L. Burin,
Frederick C. Wellstood,
Kevin D. Osborn
Abstract:
Material-based two-level systems (TLSs), appearing as defects in low-temperature devices including superconducting qubits and photon detectors, are difficult to characterize. In this study we apply a uniform dc-electric field across a film to tune the energies of TLSs within. The film is embedded in a superconducting resonator such that it forms a circuit quantum electrodynamical (cQED) system. Th…
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Material-based two-level systems (TLSs), appearing as defects in low-temperature devices including superconducting qubits and photon detectors, are difficult to characterize. In this study we apply a uniform dc-electric field across a film to tune the energies of TLSs within. The film is embedded in a superconducting resonator such that it forms a circuit quantum electrodynamical (cQED) system. The energy of individual TLSs is observed as a function of the known tuning field. By studying TLSs for which we can determine the tunneling energy, the actual $p_z$, dipole moments projected along the uniform field direction, are individually obtained. A distribution is created with 60 $p_z$. We describe the distribution using a model with two dipole moment magnitudes, and a fit yields the corresponding values $p=p_1= 2.8\pm 0.2$ Debye and $p=p_2=8.3\pm0.4$ Debye. For a strong-coupled TLS the vacuum-Rabi splitting can be obtained with $p_z$ and tunneling energy. This allows a measurement of the circuit's zero-point electric field fluctuations, in a method that does not need the electric-field volume.
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Submitted 5 April, 2016; v1 submitted 23 January, 2015;
originally announced January 2015.
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Superconducting TiN Films Sputtered over a Large Range of Substrate DC Bias
Authors:
H. M. Iftekhar Jaim,
J. A. Aguilar,
B. Sarabi,
Y. J. Rosen,
A. N. Ramanayaka,
E. H. Lock,
C. J. K. Richardson,
K. D. Osborn
Abstract:
We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting i…
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We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting in stoichiometric TiN. Over the range of bias, variations of the stress from slightly tensile to highly compressive were measured and correlated to crystallinity of the (200) growth. The films exhibited highly uniform thickness and resistivity, and show the potential for yielding reproducible low-temperature devices. Finally, coplanar resonators fabricated with the films exhibited high kinetic inductance and quality factor, where the latter was obtained in part from temperature-dependent frequency shifts.
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Submitted 24 October, 2014; v1 submitted 13 August, 2014;
originally announced August 2014.
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Cavity quantum electrodynamics using a near-resonance two-level system: emergence of the Glauber state
Authors:
Bahman Sarabi,
Aruna N. Ramanayaka,
Alexander L. Burin,
Frederick C. Wellstood,
Kevin D. Osborn
Abstract:
Random tunneling two-level systems (TLSs) in dielectrics have been of interest recently because they adversely affect the performance of superconducting qubits. The coupling of TLSs to qubits has allowed individual TLS characterization, which has previously been limited to TLSs within (thin) Josephson tunneling barriers made from aluminum oxide. Here we report on the measurement of an individual T…
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Random tunneling two-level systems (TLSs) in dielectrics have been of interest recently because they adversely affect the performance of superconducting qubits. The coupling of TLSs to qubits has allowed individual TLS characterization, which has previously been limited to TLSs within (thin) Josephson tunneling barriers made from aluminum oxide. Here we report on the measurement of an individual TLS within the capacitor of a lumped-element LC microwave resonator, which forms a cavity quantum electrodynamics (CQED) system and allows for individual TLS characterization in a different structure and material than demonstrated with qubits. Due to the reduced volume of the dielectric (80 $μ$m$^{3}$), even with a moderate dielectric thickness (250 nm), we achieve the strong coupling regime as evidenced by the vacuum Rabi splitting observed in the cavity spectrum. A TLS with a coherence time of 3.2 $μ$s was observed in a film of silicon nitride as analyzed with a Jaynes-Cummings spectral model, which is larger than seen from superconducting qubits. As the drive power is increased, we observe an unusual but explicable set of continuous and discrete crossovers from the vacuum Rabi split transitions to the Glauber (coherent) state.
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Submitted 24 March, 2015; v1 submitted 1 May, 2014;
originally announced May 2014.
