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Direct-Laser-Written Polymer Nanowire Waveguides for Broadband Single Photon Collection from Epitaxial Quantum Dots into a Gaussian-like Mode
Authors:
Edgar Perez,
Cori Haws,
Marcelo Davanco,
Jindong Song,
Luca Sapienza,
Kartik Srinivasan
Abstract:
Single epitaxial quantum dots (QDs) embedded in nanophotonic geometries are a leading technology for quantum light generation. However, efficiently coupling their emission into a single mode fiber or Gaussian beam often remains challenging. Here, we use direct laser writing (DLW) to address this challenge by fabricating 1 $μ$m diameter polymer nanowires (PNWs) in-contact-with and perpendicular-to…
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Single epitaxial quantum dots (QDs) embedded in nanophotonic geometries are a leading technology for quantum light generation. However, efficiently coupling their emission into a single mode fiber or Gaussian beam often remains challenging. Here, we use direct laser writing (DLW) to address this challenge by fabricating 1 $μ$m diameter polymer nanowires (PNWs) in-contact-with and perpendicular-to a QD-containing GaAs layer. QD emission is coupled to the PNW's HE$_{11}$ waveguide mode, enhancing collection efficiency into a single-mode fiber. PNW fabrication does not alter the QD device layer, making PNWs well-suited for augmenting preexisting in-plane geometries. We study standalone PNWs and PNWs in conjunction with metallic nanoring devices that have been previously established for increasing extraction of QD emission. We report methods that mitigate standing wave reflections and heat, caused by GaAs's absorption/reflection of the lithography beam, which otherwise prevent PNW fabrication. We observe a factor of $(3.0 \pm 0.7)\times$ improvement in a nanoring system with a PNW compared to the same system without a PNW, in line with numerical results, highlighting the PNW's ability to waveguide QD emission and increase collection efficiency simultaneously. These results demonstrate new DLW functionality in service of quantum emitter photonics that maintains compatibility with existing top-down fabrication approaches.
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Submitted 26 May, 2023; v1 submitted 10 May, 2023;
originally announced May 2023.
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Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
Authors:
Cori Haws,
Biswarup Guha,
Edgar Perez,
Marcelo Davanco,
Jin Dong Song,
Kartik Srinivasan,
Luca Sapienza
Abstract:
Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation ac…
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Being able to combine different materials allows taking advantage of different properties and device engineering that cannot be found or exploited within a single material system. In quantum nano-photonics, one might want to increase the device functionalities by, for instance, combining efficient classical and quantum light emission available in III-V semiconductors, low-loss light propagation accessible in silicon-based materials, fast electro-optical properties of lithium niobate and broadband reflectors and/or buried metallic contacts for local electric field application or electrical injection of emitters. We propose a transfer printing technique based on the removal of arrays of free-standing membranes and their deposition onto a host material using a thermal release adhesive tape-assisted process. This approach is versatile, in that it poses limited restrictions on the transferred and host materials. In particular, we transfer 190 nm-thick GaAs membranes, with dimensions up to about 260$μ$m x 80$μ$m, containing InAs quantum dots, onto a gold substrate. We show that the presence of a back reflector combined with the etching of micro-pillars significantly increases the extraction efficiency of quantum light, reaching photon fluxes, from a single quantum dot line, exceeding 8 x 10$^5$ photons per second, which is four times higher than the highest count rates measured, on the same chip, from emitters outside the pillars. Given the versatility and the ease of the process, this technique opens the path to the realisation of hybrid quantum and nano-photonic devices that can combine virtually any material that can be undercut to realise free-standing membranes that are then transferred onto any host substrate, without specific compatibility issues and/or requirements.
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Submitted 10 February, 2022;
originally announced February 2022.
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Broadband, efficient extraction of quantum light by a photonic device comprised of a metallic nano-ring and a gold back reflector
Authors:
Cori Haws,
Edgar Perez,
Marcelo Davanco,
Jin Dong Song,
Kartik Srinivasan,
Luca Sapienza
Abstract:
To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communicati…
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To implement quantum light sources based on quantum emitters in applications, it is desirable to improve the extraction efficiency of single photons. In particular controlling the directionality and solid angle of the emission are key parameters, for instance, to couple single photons into optical fibers and send the information encoded in quantum light over long distances, for quantum communication applications. In addition, fundamental studies of the radiative behavior of quantum emitters, including studies of coherence and blinking, benefit from such improved photon collection. Quantum dots grown via Stranski-Krastanov technique have shown to be good candidates for bright, coherent, indistinguishable quantum light emission. However, one of the challenges associated with these quantum light sources arises from the fact that the emission wavelengths can vary from one emitter to the other. To this end, broadband light extractors that do not rely on high-quality factor optical cavities would be desirable, so that no tuning between the quantum dot emission wavelength and the resonator used to increase the light extraction is needed. Here, we show that metallic nano-rings combined with gold back reflectors increase the collection efficiency of single photons and we study the statistics of this effect when quantum dots are spatially randomly distributed within the nano-rings. We show an average increase in the brightness of about a factor 7.5, when comparing emitters within and outside the nano-rings in devices with a gold back reflector, we measure count rates exceeding 7 x 10^6 photons per second and single photon purities as high as 85% +/- 1%. These results are important steps towards the realisation of scalable, broadband, easy to fabricate sources of quantum light for quantum communication applications.
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Submitted 14 December, 2021;
originally announced December 2021.
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Control of single quantum emitters in bio-inspired aperiodic nano-photonic devices
Authors:
Oliver J. Trojak,
Sean Gorsky,
Connor Murray,
Fabrizio Sgrignuoli,
Felipe Arruda Pinheiro,
Suk-In Park,
Jin Dong Song,
Luca Dal Negro,
Luca Sapienza
Abstract:
Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial…
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Enhancing light-matter interactions on a chip is of paramount importance to study nano- and quantum optics effects and to realise integrated devices, for instance, for classical and quantum photonics, sensing and energy harvesting applications. Engineered nano-devices enable the efficient confinement of light and the control of the spontaneous emission dynamics of single emitters, which is crucial for cavity quantum electrodynamics experiments and for the development of classical and quantum light sources. Here, we report on the demonstration of enhanced light-matter interaction and Purcell effects on a chip, based on bio-inspired aperiodic devices fabricated in silicon nitride and gallium arsenide. Internal light sources, namely optically-active defect centers in silicon nitride and indium arsenide single quantum dots, are used to image and characterize, by means of micro-photoluminescence spectroscopy, the individual optical modes confined by photonic membranes with Vogel-spiral geometry. By studying the statistics of the measured optical resonances, in partnership with rigorous multiple scattering theory, we observe log-normal distributions and report quality factors with values as high as 2201+/-443. Building on the strong light confinement achieved in this novel platform, we further investigate the coupling of single semiconductor quantum dots to the confined optical modes. Our results show cavity quantum electrodynamics effects providing strong modifications of the spontaneous emission decay of single optical transitions: we show control of the decay lifetime of single emitters with a dynamic range reaching 20. Our findings improve the understanding of the fundamental physical properties of light-emitting Vogel-spiral systems, show their application to quantum photonic devices, and form the basis for the further development of classical and quantum active devices on a chip.
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Submitted 18 January, 2020;
originally announced January 2020.
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Combined metallic nano-rings and solid-immersion lenses for bright emission from single InAs/GaAs quantum dots
Authors:
Oliver Joe Trojak,
Christopher Woodhead,
Suk-In Park,
Jin Dong Song,
Robert James Young,
Luca Sapienza
Abstract:
Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this iss…
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Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are embedded in and air: this results in a small fraction (that can be as low as <1%) of the emitted photons reaching free-space collection optics. To overcome this issue, we present a device that combines a metallic nano-ring, positioned on the sample surface and centered around the emitter, and an epoxy-based super-solid immersion lens, deterministically deposited above the ring devices. We show that the combined broadband lensing effect of the nano-ring and of the super-solid immersion lens significantly increases the extraction of light emitted by single InAs/GaAs quantum dots into free space: we observe enhancements in the emitted intensity by the nano-ring of up to a factor 20 and by the super-solid immersion lens of up to a factor 10. Such cumulative enhancements allow us to measure photon fluxes approaching 1 million counts per second, from a single InAs/GaAs quantum dot in bulk. The combined broad-band enhancement in the extraction of light can be implemented with any kind of classical and quantum solid-state emitter and opens the path to the realisation of scalable bright devices. The same approach can also be implemented to improve the absorption of light, for instance for small-area broadband photo-detectors.
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Submitted 22 January, 2018;
originally announced January 2018.
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GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications
Authors:
Suk In Park,
Oliver Joe Trojak,
Eunhye Lee,
Jin Dong Song,
Jihoon Kyhm,
Ilki Han,
Jongsu Kim,
Gyu-Chul Yi,
Luca Sapienza
Abstract:
We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic…
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We report on the growth and optical characterisation of droplet GaAs quantum dots with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the quantum dots obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single quantum dots, at near-infrared wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are ideal candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.
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Submitted 29 October, 2017;
originally announced October 2017.
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Optical sensing with Anderson-localised light
Authors:
Oliver Joe Trojak,
Tom Crane,
Luca Sapienza
Abstract:
We show that fabrication imperfections in silicon nitride photonic crystal waveguides can be used as a resource to efficiently confine light in the Anderson-localised regime and add functionalities to photonic devices. Our results prove that disorder-induced localisation of light can be utilised to realise an alternative class of high-quality optical sensors operating at room temperature. We measu…
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We show that fabrication imperfections in silicon nitride photonic crystal waveguides can be used as a resource to efficiently confine light in the Anderson-localised regime and add functionalities to photonic devices. Our results prove that disorder-induced localisation of light can be utilised to realise an alternative class of high-quality optical sensors operating at room temperature. We measure wavelength shifts of optical resonances as large as 15.2 nm, more than 100 times the spectral linewidth of 0.15\,nm, for a refractive index change of about 0.38. By studying the temperature dependence of the optical properties of the system, we report wavelength shifts of up to about 2 nm and increases of more than a factor 2 in the quality factor of the cavity resonances, when going from room to cryogenic temperatures. Such a device can allow simultaneous sensing of both local contaminants and temperature variations, monitored by tens of optical resonances spontaneously appearing along a single photonic crystal waveguide. Our findings demonstrate the potential of Anderson-localised light in photonic crystals for scalable and efficient optical sensors operating in the visible and near-infrared range of wavelengths.
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Submitted 6 October, 2017; v1 submitted 7 September, 2017;
originally announced September 2017.
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Metallic nanorings for broadband, enhanced extraction of light from solid-state emitters
Authors:
Oliver J. Trojak,
Suk In Park,
Jin Dong Song,
Luca Sapienza
Abstract:
We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as hi…
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We report on the increased extraction of light emitted by solid-state sources embedded within high refractive index materials. This is achieved by making use of a local lensing effect by sub-micron metallic rings deposited on the sample surface and centered around single emitters. We show enhancements in the intensity of the light emitted by InAs/GaAs single quantum dot lines into free space as high as a factor 20. Such a device is intrinsically broadband and therefore compatible with any kind of solid-state light source. We foresee the fabrication of metallic rings via scalable techniques, like nano-imprint, and their implementation to improve the emission of classical and quantum light from solid-state sources. Furthermore, while increasing the brightness of the devices, the metallic rings can also act as top contacts for the local application of electric fields for carrier injection or wavelength tuning.
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Submitted 25 April, 2017;
originally announced April 2017.
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Cryogenic photoluminescence imaging system for nanoscale positioning of single quantum emitters
Authors:
Jin Liu,
Macelo Davanco,
Luca Sapienza,
Kumarasiri Konthasinghe,
Jose Vinicius De Miranda Cardoso,
Jin Dong Song,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locati…
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We report a photoluminescence imaging system for locating single quantum emitters with respect to alignment features. Samples are interrogated in a 4~K closed-cycle cryostat by a high numerical aperture (NA=0.9, 100$\times$ magnification) objective that sits within the cryostat, enabling high efficiency collection of emitted photons without image distortions due to the cryostat windows. The locations of single InAs/GaAs quantum dots within a $>50$~$μ$m~$\times$~50~$μ$m field of view are determined with $\approx4.5$~nm uncertainty (one standard deviation) in a 1~s long acquisition. The uncertainty is determined through a combination of a maximum likelihood estimate for localizing the quantum dot emission, and a cross-correlation method for determining the alignment mark center. This location technique can be an important step in the high-throughput creation of nanophotonic devices that rely upon the interaction of highly confined optical modes with single quantum emitters.
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Submitted 21 December, 2016;
originally announced December 2016.
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Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
Authors:
Luca Sapienza,
Jin Liu,
Jin Dong Song,
Stefan Falt,
Werner Wegscheider,
Antonio Badolato,
Kartik Srinivasan
Abstract:
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane…
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We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical and scanning probe characterization techniques, we determine the position of single quantum dots with respect to comparatively large (100 nm to 1000 nm in-plane dimension) topographic features. We find that quantum dots often appear (>25% of the time) in the vicinity of these features, but generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions. This behavior is observed across multiple wafers produced in different growth chambers. Our characterization approach is relevant to applications in which single quantum dots are embedded within nanofabricated photonic devices, where such large surface features can affect the interaction with confined optical fields and the quality of the single-photon emission. In particular, we anticipate using this approach to screen quantum dots not only based on their optical properties, but also their surrounding surface topographies.
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Submitted 6 December, 2016;
originally announced December 2016.
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Anderson localisation of visible light on a nanophotonic chip
Authors:
Tom Crane,
Oliver J. Trojak,
Luca Sapienza
Abstract:
We demonstrate Anderson localisation of visible light on a chip and report quality factors exceeding highly engineered two-dimensional cavities. Our results reverse the trend, observed so far, of the quality of disorder-induced light confinement being orders of magnitude lower than engineered devices. Furthermore, by implementing a sensitive imaging technique, we directly visualise the localised m…
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We demonstrate Anderson localisation of visible light on a chip and report quality factors exceeding highly engineered two-dimensional cavities. Our results reverse the trend, observed so far, of the quality of disorder-induced light confinement being orders of magnitude lower than engineered devices. Furthermore, by implementing a sensitive imaging technique, we directly visualise the localised modes, determine their position on the device and measure their spatial extension. Our findings prove the potential of disorder-induced localised light for scalable, room temperature, optical devices, operating in the visible range of wavelengths.
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Submitted 14 June, 2016; v1 submitted 27 May, 2016;
originally announced May 2016.
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Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths
Authors:
Luca Sapienza,
Rima Al-Khuzheyri,
Adetunmise Dada,
Andrew Griffiths,
Edmund Clarke,
Brian D. Gerardot
Abstract:
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction length…
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We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction lengths, and $g$-factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement regime. Large range electric field tunability, up to 7 meV, is demonstrated for excitons. We observe a large reduction, up to one order of magnitude, in the diamagnetic coefficient when rotating the magnetic field from Faraday to Voigt geometry due to the unique dot morphology. The complete spectroscopic characterization of the fundamental properties of long-wavelength dot-in-a-well structures provides insight for the applicability of quantum technologies based on quantum dots emitting at telecom wavelengths.
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Submitted 21 March, 2016; v1 submitted 20 January, 2016;
originally announced January 2016.
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Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission
Authors:
Luca Sapienza,
Marcelo Davanco,
Antonio Badolato,
Kartik Srinivasan
Abstract:
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of sing…
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Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average position uncertainty < 30 nm (< 10 nm when using a solid immersion lens), which represents an enabling technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton probability (g(2)(0) <1 %), and a significant Purcell enhancement factor (~ 3).
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Submitted 5 August, 2015; v1 submitted 24 March, 2015;
originally announced March 2015.
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Exciton fine-structure splitting of telecom wavelength single quantum dots: statistics and external strain tuning
Authors:
Luca Sapienza,
Ralph N. E. Malein,
Christopher E. Kuklewicz,
Peter E. Kremer,
Kartik Srinivasan,
Andrew Griffiths,
Edmund Clarke,
Ming Gong,
Richard J. Warburton,
Brian D. Gerardot
Abstract:
In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1μm < λ< 1.3 μm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 μeV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slope…
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In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1μm < λ< 1.3 μm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 μeV are measured and manipulated. We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths.
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Submitted 18 September, 2013; v1 submitted 5 March, 2013;
originally announced March 2013.
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Statistical measurements of quantum emitters coupled to Anderson-localized modes in disordered photonic-crystal waveguides
Authors:
Alisa Javadi,
Pedro D. Garcia,
Luca Sapienza,
Henri Thyrrestrup,
Peter Lodahl
Abstract:
Optical nanostructures have proven to be meritorious for tailoring the emission properties of quantum emitters. However, unavoidable fabrication imperfections may represent a nuisance. Quite remarkably, disorder offers new opportunities since light can be efficiently confined by random multiple scattering leading to Anderson localization. Here we investigate the effect of such disorder-induced cav…
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Optical nanostructures have proven to be meritorious for tailoring the emission properties of quantum emitters. However, unavoidable fabrication imperfections may represent a nuisance. Quite remarkably, disorder offers new opportunities since light can be efficiently confined by random multiple scattering leading to Anderson localization. Here we investigate the effect of such disorder-induced cavities on the emission dynamics of single quantum dots embedded in disordered photonic-crystal waveguides. We present time-resolved measurements of both the total emission from Anderson-localized cavities and from single emitters that are coupled to the cavities. We observe both strongly inhibited and enhanced decay rates relative to the rate of spontaneous emission in a homogeneous medium. From a statistical analysis, we report an average Purcell factor of 2 in without any control on the quantum dot - cavity detuning. By spectrally tuning individual quantum dots into resonance with Anderson-localized modes, a maximum Purcell factor of 23.8 is recorded, which lies at the onset of the strong coupling regime. The presented data quantify the potential of naturally occurring Anderson-localized cavities for controlling and enhancing the light-matter interaction strength, which is of relevance not only for cavity quantum-electrodynamics experiments but potentially also for efficient energy harvesting and controllable random lasing.
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Submitted 2 January, 2013;
originally announced January 2013.
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Intersubband electroluminescent devices operating in the strong coupling regime
Authors:
Pierre Jouy,
Angela Vasanelli,
Yanko Todorov,
Luca Sapienza,
Raffaele Colombelli,
Ulf Gennser,
Carlo Sirtori
Abstract:
We present a detailed study of the electroluminescence of intersubband devices operating in the light-matter strong coupling regime. The devices have been characterized by performing angle resolved spectroscopy that shows two distinct light intensity spots in the momentum-energy phase diagram. These two features of the electroluminescence spectra are associated with photons emitted from the lower…
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We present a detailed study of the electroluminescence of intersubband devices operating in the light-matter strong coupling regime. The devices have been characterized by performing angle resolved spectroscopy that shows two distinct light intensity spots in the momentum-energy phase diagram. These two features of the electroluminescence spectra are associated with photons emitted from the lower polariton branch and from the weak coupling of the intersubband transition with an excited cavity mode. The same electroluminescent active region has been processed into devices with and without the optical microcavity to illustrate the difference between a device operating in the strong and weak coupling regime. The spectra are very well simulated as the product of the polariton optical density of states, and a function describing the energy window in which the polariton states are populated. The voltage evolution of the spectra shows that the strong coupling regime allows the observation of the electroluminescence at energies otherwise inaccessible.
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Submitted 26 December, 2012;
originally announced December 2012.
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Probing statistical properties of Anderson localization with quantum emitters
Authors:
Stephan Smolka,
Henri Thyrrestrup,
Luca Sapienza,
Tau B. Lehmann,
Kristian R. Rix,
Luis S. Froufe-Pérez,
Pedro D. García,
Peter Lodahl
Abstract:
Wave propagation in disordered media can be strongly modified by multiple scattering and wave interference. Ultimately the so-called Anderson-localized regime is reached when the waves become strongly confined in space. So far, Anderson localization of light has been probed in transmission experiments by measuring the intensity of an external light source after propagation through a disordered med…
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Wave propagation in disordered media can be strongly modified by multiple scattering and wave interference. Ultimately the so-called Anderson-localized regime is reached when the waves become strongly confined in space. So far, Anderson localization of light has been probed in transmission experiments by measuring the intensity of an external light source after propagation through a disordered medium. However, discriminating between Anderson localization and losses in these experiments remains a major challenge. Here we present an alternative approach where we use quantum emitters embedded in disordered photonic crystal waveguides as light sources. Anderson-localized modes are efficiently excited and the analysis of the photoluminescence spectra allows to explore their statistical properties paving a way for controlling Anderson localization in disordered photonic crystals.
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Submitted 30 March, 2011;
originally announced March 2011.
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Extraction of the beta-factor for single quantum dots coupled to a photonic crystal waveguide
Authors:
Henri Thyrrestrup,
Luca Sapienza,
Peter Lodahl
Abstract:
We present measurements of the beta-factor, describing the coupling efficiency of light emitted by single InAs/GaAs semiconductor quantum dots into a photonic crystal waveguide mode. The beta-factor is evaluated by means of time-resolved frequency-dependent photoluminescence spectroscopy. The emission wavelength of single quantum dots is temperature tuned across the band edge of a photonic crystal…
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We present measurements of the beta-factor, describing the coupling efficiency of light emitted by single InAs/GaAs semiconductor quantum dots into a photonic crystal waveguide mode. The beta-factor is evaluated by means of time-resolved frequency-dependent photoluminescence spectroscopy. The emission wavelength of single quantum dots is temperature tuned across the band edge of a photonic crystal waveguide and the spontaneous emission rate is recorded. Decay rates up to 5.7 ns^(-1), corresponding to a Purcell factor of 5.2, are measured and beta-factors up to 85% are extracted. These results prove the potential of photonic crystal waveguides in the realization of on-chip single-photon sources.
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Submitted 17 March, 2010;
originally announced March 2010.
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Cavity Quantum Electrodynamics with Anderson-localized Modes
Authors:
Luca Sapienza,
Henri Thyrrestrup,
Søren Stobbe,
Pedro David Garcia,
Stephan Smolka,
Peter Lodahl
Abstract:
A major challenge in quantum optics and quantum information technology is to enhance the interaction between single photons and single quantum emitters. Highly engineered optical cavities are generally implemented requiring nanoscale fabrication precision. We demonstrate a fundamentally different approach in which disorder is used as a resource rather than a nuisance. We generate strongly confine…
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A major challenge in quantum optics and quantum information technology is to enhance the interaction between single photons and single quantum emitters. Highly engineered optical cavities are generally implemented requiring nanoscale fabrication precision. We demonstrate a fundamentally different approach in which disorder is used as a resource rather than a nuisance. We generate strongly confined Anderson-localized cavity modes by deliberately adding disorder to photonic crystal waveguides. The emission rate of a semiconductor quantum dot embedded in the waveguide is enhanced by a factor of 15 on resonance with the Anderson-localized mode and 94 % of the emitted single-photons couple to the mode. Disordered photonic media thus provide an efficient platform for quantum electrodynamics offering an approach to inherently disorder-robust quantum information devices.
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Submitted 12 March, 2010;
originally announced March 2010.
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Electrically injected cavity polaritons
Authors:
Luca Sapienza,
Angela Vasanelli,
Raffaele Colombelli,
Cristiano Ciuti,
Yannick Chassagneux,
Christophe Manquest,
Ulf Gennser,
Carlo Sirtori
Abstract:
We have realised a semiconductor quantum structure that produces electroluminescence while operating in the light-matter strong coupling regime. The mid-infrared light emitting device is composed of a quantum cascade structure embedded in a planar microcavity, based on the GaAs/AlGaAs material system. At zero bias, the structure is characterised using reflectivity measurements which show, up to…
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We have realised a semiconductor quantum structure that produces electroluminescence while operating in the light-matter strong coupling regime. The mid-infrared light emitting device is composed of a quantum cascade structure embedded in a planar microcavity, based on the GaAs/AlGaAs material system. At zero bias, the structure is characterised using reflectivity measurements which show, up to room temperature, a wide polariton anticrossing between an intersubband transition and the resonant cavity photon mode. Under electrical injection the spectral features of the emitted light change drastically, as electrons are resonantly injected in a reduced part of the polariton branches. Our experiment demonstrates that electrons can be selectively injected into polariton states up to room temperature.
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Submitted 25 September, 2007;
originally announced September 2007.
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Photovoltaic Probe of Cavity Polaritons in a Quantum Cascade Structure
Authors:
Luca Sapienza,
Raffaele Colombelli,
Angela Vasanelli,
Cristiano Ciuti,
Christophe Manquest,
Ulf Gennser,
Carlo Sirtori
Abstract:
The strong coupling between an intersubband excitation in a quantum cascade structure and a photonic mode of a planar microcavity has been detected by angle-resolved photovoltaic measurements. A typical anticrossing behavior, with a vacuum-field Rabi splitting of 16 meV at 78K, has been measured, for an intersubband transition at 163 meV. These results show that the strong coupling regime betwee…
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The strong coupling between an intersubband excitation in a quantum cascade structure and a photonic mode of a planar microcavity has been detected by angle-resolved photovoltaic measurements. A typical anticrossing behavior, with a vacuum-field Rabi splitting of 16 meV at 78K, has been measured, for an intersubband transition at 163 meV. These results show that the strong coupling regime between photons and intersubband excitations can be engineered in a quantum cascade opto-electronic device. They also demonstrate the possibility to perform angle-resolved mid-infrared photodetection and to develop active devices based on intersubband cavity polaritons.
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Submitted 7 March, 2007;
originally announced March 2007.
