Theoretical investigation of the lattice thermal conductivities of II-IV-V2 pnictide semiconductors
Authors:
Victor Posligua,
Jose J. Plata,
Antonio M. Márquez,
Javier Fdez Sanz,
Ricardo Grau-Crespo
Abstract:
Ternary pnictides semiconductors with II-IV-V2 stoichiometry hold potential as cost effective thermoelectric materials with suitable electronic transport properties, but their lattice thermal conductivities ($κ$) are typically too high. Gaining insight into their vibrational properties is therefore crucial to finding strategies to reduce $κ$ and achieve improved thermoelectric performance. We pres…
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Ternary pnictides semiconductors with II-IV-V2 stoichiometry hold potential as cost effective thermoelectric materials with suitable electronic transport properties, but their lattice thermal conductivities ($κ$) are typically too high. Gaining insight into their vibrational properties is therefore crucial to finding strategies to reduce $κ$ and achieve improved thermoelectric performance. We present a theoretical exploration of the lattice thermal conductivities for a set of pnictide semiconductors with ABX2 composition (A = Zn, Cd; B = Si, Ge, Sn; and X = P, As), using machine-learning based regression algorithms to extract force constants from a reduced number of density functional theory simulations, and then solving the Boltzmann transport equation for phonons. Our results align well available experimental data, decreasing the mean absolute error by ~3 Wm-1K-1 with respect to the best previous set of theoretical predictions. Zn-based ternary pnictides have, on average, more than double the thermal conductivity of the Cd-based compounds. Anisotropic behaviour increases with the mass difference between A and B cations, but while the nature of the anion does not affect the structural anisotropy, the thermal conductivity anisotropy is typically higher for arsenides than for phosphides. We identify compounds, like CdGeAs2, for which nanostructuring to an affordable range of particle sizes could lead to values low enough for thermoelectric applications.
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Submitted 8 September, 2023;
originally announced September 2023.
High-throughput screening of the thermoelastic properties of ultra-high temperature ceramics
Authors:
Pinku Nath,
Jose J. Plata,
Julia Santana,
Ernesto J. Blancas,
Antonio M. Márquez,
Javier Fdez. Sanz
Abstract:
Ultra-high temperature ceramics, UHTCs, are a group of materials with high technological interest because their use in extreme environments. However, their characterization at high temperatures represents the main obstacle for their fast development. Obstacles are found from a experimental point of view, where only few laboratories around the world have the resources to test these materials under…
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Ultra-high temperature ceramics, UHTCs, are a group of materials with high technological interest because their use in extreme environments. However, their characterization at high temperatures represents the main obstacle for their fast development. Obstacles are found from a experimental point of view, where only few laboratories around the world have the resources to test these materials under extreme conditions, and also from a theoretical point of view, where actual methods are extremely expensive. Here, a new theoretical high-throughput framework for the prediction of the thermoelastic properties of materials is introduced. This approach can be systematically applied to any kind of crystalline material, drastically reducing the computational cost of previous methodologies. Elastic constants for UHTCs have been calculated at a wide range of temperatures with excellent agreement with experimentally reported values. Moreover, other mechanical properties such a bulk modulus, shear modulus or Poisson ration have been also explored. Other frameworks with similar computational cost have been used only for predicting isotropic or averaged properties, however this new approach opens the door to the calculation of anisotropic properties at a very low computational cost.
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Submitted 10 November, 2020;
originally announced November 2020.