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Showing 1–9 of 9 results for author: Santos, T S

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  1. arXiv:2407.20965  [pdf

    cond-mat.mes-hall

    Thermal Effects on Damping Determination of Perpendicular MRAM Devices by Spin-Torque Ferromagnetic Resonance

    Authors: H. J. Richter, G. Mihajlović, R. V. Chopdekar, W. Jung, J. Gibbons, N. D. Melendez, M. K. Grobis, T. S. Santos

    Abstract: We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device level da… ▽ More

    Submitted 30 July, 2024; originally announced July 2024.

    Comments: 19 pages, 10 figures

  2. arXiv:2112.09159  [pdf

    cs.ET cond-mat.dis-nn cond-mat.mtrl-sci cs.LG physics.app-ph

    Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

    Authors: Jonathan M. Goodwill, Nitin Prasad, Brian D. Hoskins, Matthew W. Daniels, Advait Madhavan, Lei Wan, Tiffany S. Santos, Michael Tran, Jordan A. Katine, Patrick M. Braganca, Mark D. Stiles, Jabez J. McClelland

    Abstract: The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magn… ▽ More

    Submitted 6 May, 2022; v1 submitted 16 December, 2021; originally announced December 2021.

    Comments: 22 pages plus 8 pages supplemental material; 7 figures plus 7 supplemental figures

    Journal ref: Physical Review Applied, 18(1) 014039 (2022)

  3. arXiv:2008.01343  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph

    Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM

    Authors: Tiffany S. Santos, Goran Mihajlovic, Neil Smith, J. -L. Li, Matthew Carey, Jordan A. Katine, Bruce D. Terris

    Abstract: The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thicknes… ▽ More

    Submitted 4 August, 2020; originally announced August 2020.

    Comments: 6 pages, 6 figures

    Journal ref: Journal of Applied Physics 128, 113904 (2020)

  4. arXiv:1105.0223  [pdf, ps, other

    cond-mat.str-el cond-mat.mes-hall cond-mat.mtrl-sci

    Delta Doping of Ferromagnetism in Antiferromagnetic Manganite Superlattices

    Authors: T. S. Santos, B. J. Kirby, S. Kumar, S. J. May, J. A. Borchers, B. B. Maranville, J. Zarestky, S. G. E. te Velthuis, J. van den Brink, A. Bhattacharya

    Abstract: We demonstrate that delta-doping can be used to create a dimensionally confined region of metallic ferromagnetism in an antiferromagnetic (AF) manganite host, without introducing any explicit disorder due to dopants or frustration of spins. Delta-doped carriers are inserted into a manganite superlattice (SL) by a digital-synthesis technique. Theoretical consideration of these additional carriers s… ▽ More

    Submitted 21 October, 2011; v1 submitted 1 May, 2011; originally announced May 2011.

    Journal ref: Phys. Rev. Lett. 107, 167202 (2011)

  5. arXiv:1010.0372  [pdf, ps, other

    cond-mat.str-el cond-mat.mes-hall cond-mat.mtrl-sci

    Cation-ordering effects in the single layered manganite La(2/3)Sr(4/3)MnO4

    Authors: B. B. Nelson-Cheeseman, A. B. Shah, T. S. Santos, S. D. Bader, J. -M. Zuo, A. Bhattacharya

    Abstract: We have synthesized epitaxial La(1-x)Sr(1+x)MnO4 (x=1/3) films as random alloys and cation-ordered analogues to probe how cation order affects the properties of a 2D manganite. The films show weak ferromagnetic ordering up to 130 K, although there is a dramatic difference in magnetic anisotropy depending on the cation order. While all films exhibit similar gapped insulator behavior above 130 K, th… ▽ More

    Submitted 5 October, 2010; v1 submitted 2 October, 2010; originally announced October 2010.

    Comments: 4 figures

  6. arXiv:0908.1419  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci

    Nanometer-scale striped surface terminations on fractured SrTiO$_{3}$ surfaces

    Authors: Nathan P. Guisinger, Tiffany S. Santos, Jeffrey R. Guest, Te-Yu Chien, Anand Bhattacharya, John W. Freeland, Matthias Bode

    Abstract: Using cross-sectional scanning tunneling microscopy on in situ fractured SrTiO$_{3}$, one of the most commonly used substrates for the growth of complex oxide thin films and superlattices, atomically smooth terraces have been observed on (001) surfaces. Furthermore, it was discovered that fracturing this material at room temperature results in the formation of stripe patterned domains having cha… ▽ More

    Submitted 10 August, 2009; originally announced August 2009.

    Comments: 15 pages, 4 figures

    Journal ref: ACS nano 3 (2009) 4132-4136

  7. arXiv:0902.3678  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.str-el

    Onset of metallic behavior in strained (LaNiO3)n/(SrMnO3)2 superlattices

    Authors: S. J. May, T. S. Santos, A. Bhattacharya

    Abstract: (LaNiO3)n/(SrMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy. In situ reflection high energy electron diffraction and x-ray scattering has been used to characterize the structural properties of the superlattices, which are strained to the SrTiO3 substrates. The superlattices exhibit excellent crystallinity and interfacial roughness of less than one unit cell. A metal-… ▽ More

    Submitted 20 February, 2009; originally announced February 2009.

    Comments: Accepted for publication in Physical Review B

    Journal ref: Physical Review B 79, 115127 (2009)

  8. Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers

    Authors: T. Nagahama, T. S. Santos, J. S. Moodera

    Abstract: In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polariz… ▽ More

    Submitted 12 March, 2007; originally announced March 2007.

    Comments: 4pages, 4Postscript figures, RevTeX4

  9. Shot Noise in Magnetic Tunnel Junctions: Evidence for Sequential Tunneling

    Authors: R. Guerrero, F. G. Aliev, Y. Tserkovnyak, T. S. Santos, J. S. Moodera

    Abstract: We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in conductance, the Fano factor (normalized shot noise) depends on the magnetic configuration being enhanced for antiparallel alignment of the ferromagnetic electrod… ▽ More

    Submitted 15 January, 2007; v1 submitted 20 February, 2006; originally announced February 2006.

    Comments: 5 pages, 5 figures

    Journal ref: Phys. Rev. Lett. 97 (2006) 266602