-
Thermal Effects on Damping Determination of Perpendicular MRAM Devices by Spin-Torque Ferromagnetic Resonance
Authors:
H. J. Richter,
G. Mihajlović,
R. V. Chopdekar,
W. Jung,
J. Gibbons,
N. D. Melendez,
M. K. Grobis,
T. S. Santos
Abstract:
We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device level da…
▽ More
We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device level damping is higher than film level damping and increases with decreasing cell size. This is attributed to edge damage caused by device patterning.
△ Less
Submitted 30 July, 2024;
originally announced July 2024.
-
Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions
Authors:
Jonathan M. Goodwill,
Nitin Prasad,
Brian D. Hoskins,
Matthew W. Daniels,
Advait Madhavan,
Lei Wan,
Tiffany S. Santos,
Michael Tran,
Jordan A. Katine,
Patrick M. Braganca,
Mark D. Stiles,
Jabez J. McClelland
Abstract:
The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magn…
▽ More
The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.
△ Less
Submitted 6 May, 2022; v1 submitted 16 December, 2021;
originally announced December 2021.
-
Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM
Authors:
Tiffany S. Santos,
Goran Mihajlovic,
Neil Smith,
J. -L. Li,
Matthew Carey,
Jordan A. Katine,
Bruce D. Terris
Abstract:
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thicknes…
▽ More
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thickness, W in our case, and also splitting the single W layer into two layers of sub-monolayer thickness, we have reduced $t_F$ while minimizing $α$ and maximizing $M_S$, ultimately leading to lower $J_{c0}$ while maintaining high thermal stability. Bottom-pinned MRAM cells with device diameter in the range of 55-130 nm were fabricated, and $J_{c0}$ is lowest for the thinnest (1.2 nm) FLs, down to 4 MA/cm$^2$ for 65 nm devices, $\sim$30% lower than 1.7 nm FLs. The thermal stability factor $Δ_{\mathrm{dw}}$, as high as 150 for the smallest device size, was determined using a domain wall reversal model from field switching probability measurements. With high $Δ_{\mathrm{dw}}$ and lowest $J_{c0}$, the thinnest FLs have the highest spin-transfer torque efficiency.
△ Less
Submitted 4 August, 2020;
originally announced August 2020.
-
Delta Doping of Ferromagnetism in Antiferromagnetic Manganite Superlattices
Authors:
T. S. Santos,
B. J. Kirby,
S. Kumar,
S. J. May,
J. A. Borchers,
B. B. Maranville,
J. Zarestky,
S. G. E. te Velthuis,
J. van den Brink,
A. Bhattacharya
Abstract:
We demonstrate that delta-doping can be used to create a dimensionally confined region of metallic ferromagnetism in an antiferromagnetic (AF) manganite host, without introducing any explicit disorder due to dopants or frustration of spins. Delta-doped carriers are inserted into a manganite superlattice (SL) by a digital-synthesis technique. Theoretical consideration of these additional carriers s…
▽ More
We demonstrate that delta-doping can be used to create a dimensionally confined region of metallic ferromagnetism in an antiferromagnetic (AF) manganite host, without introducing any explicit disorder due to dopants or frustration of spins. Delta-doped carriers are inserted into a manganite superlattice (SL) by a digital-synthesis technique. Theoretical consideration of these additional carriers show that they cause a local enhancement of ferromagnetic (F) double-exchange with respect to AF superexchange, resulting in local canting of the AF spins. This leads to a highly modulated magnetization, as measured by polarized neutron reflectometry. The spatial modulation of the canting is related to the spreading of charge from the doped layer, and establishes a fundamental length scale for charge transfer, transformation of orbital occupancy and magnetic order in these manganites. Furthermore, we confirm the existence of the canted, AF state as was predicted by de Gennes [P.-G. de Gennes, Phys. Rev. 118, 141 (1960)], but had remained elusive.
△ Less
Submitted 21 October, 2011; v1 submitted 1 May, 2011;
originally announced May 2011.
-
Cation-ordering effects in the single layered manganite La(2/3)Sr(4/3)MnO4
Authors:
B. B. Nelson-Cheeseman,
A. B. Shah,
T. S. Santos,
S. D. Bader,
J. -M. Zuo,
A. Bhattacharya
Abstract:
We have synthesized epitaxial La(1-x)Sr(1+x)MnO4 (x=1/3) films as random alloys and cation-ordered analogues to probe how cation order affects the properties of a 2D manganite. The films show weak ferromagnetic ordering up to 130 K, although there is a dramatic difference in magnetic anisotropy depending on the cation order. While all films exhibit similar gapped insulator behavior above 130 K, th…
▽ More
We have synthesized epitaxial La(1-x)Sr(1+x)MnO4 (x=1/3) films as random alloys and cation-ordered analogues to probe how cation order affects the properties of a 2D manganite. The films show weak ferromagnetic ordering up to 130 K, although there is a dramatic difference in magnetic anisotropy depending on the cation order. While all films exhibit similar gapped insulator behavior above 130 K, there is a significant difference in the low temperature transport mechanism depending on the cation order. Differences in magnetic anisotropy and low temperature transport are consistent with differences in Mn 3d orbital occupancies. Together this work suggests that cation ordering can significantly alter the Mn 3d orbital ground state in these correlated electron systems.
△ Less
Submitted 5 October, 2010; v1 submitted 2 October, 2010;
originally announced October 2010.
-
Nanometer-scale striped surface terminations on fractured SrTiO$_{3}$ surfaces
Authors:
Nathan P. Guisinger,
Tiffany S. Santos,
Jeffrey R. Guest,
Te-Yu Chien,
Anand Bhattacharya,
John W. Freeland,
Matthias Bode
Abstract:
Using cross-sectional scanning tunneling microscopy on in situ fractured SrTiO$_{3}$, one of the most commonly used substrates for the growth of complex oxide thin films and superlattices, atomically smooth terraces have been observed on (001) surfaces. Furthermore, it was discovered that fracturing this material at room temperature results in the formation of stripe patterned domains having cha…
▽ More
Using cross-sectional scanning tunneling microscopy on in situ fractured SrTiO$_{3}$, one of the most commonly used substrates for the growth of complex oxide thin films and superlattices, atomically smooth terraces have been observed on (001) surfaces. Furthermore, it was discovered that fracturing this material at room temperature results in the formation of stripe patterned domains having characteristic widths (~10 nm to ~20 nm) of alternating surface terminations that extend over a long-range. Spatial characterization utilizing spectroscopy techniques revealed a strong contrast in the electronic structure of the two domains. Combining these results with topographic data, we are able to assign both TiO$_{2}$ and SrO terminations to their respective domains. The results of this proof-of-principle experiment reveal that fracturing this material leads to reproducibly flat surfaces that can be characterized at the atomic-scale and suggests that this technique can be utilized for the study of technologically relevant complex oxide interfaces.
△ Less
Submitted 10 August, 2009;
originally announced August 2009.
-
Onset of metallic behavior in strained (LaNiO3)n/(SrMnO3)2 superlattices
Authors:
S. J. May,
T. S. Santos,
A. Bhattacharya
Abstract:
(LaNiO3)n/(SrMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy. In situ reflection high energy electron diffraction and x-ray scattering has been used to characterize the structural properties of the superlattices, which are strained to the SrTiO3 substrates. The superlattices exhibit excellent crystallinity and interfacial roughness of less than one unit cell. A metal-…
▽ More
(LaNiO3)n/(SrMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy. In situ reflection high energy electron diffraction and x-ray scattering has been used to characterize the structural properties of the superlattices, which are strained to the SrTiO3 substrates. The superlattices exhibit excellent crystallinity and interfacial roughness of less than one unit cell. A metal-insulator transition is observed as $n$ is decreased from 4 to 1. Analysis of the transport data suggests an evolution from gapped insulator (n=1) to hopping conductor (n=2) to metal (n=4) with increasing LaNiO3 concentration.
△ Less
Submitted 20 February, 2009;
originally announced February 2009.
-
Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers
Authors:
T. Nagahama,
T. S. Santos,
J. S. Moodera
Abstract:
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polariz…
▽ More
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory shows excellent agreement with experiment.
△ Less
Submitted 12 March, 2007;
originally announced March 2007.
-
Shot Noise in Magnetic Tunnel Junctions: Evidence for Sequential Tunneling
Authors:
R. Guerrero,
F. G. Aliev,
Y. Tserkovnyak,
T. S. Santos,
J. S. Moodera
Abstract:
We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in conductance, the Fano factor (normalized shot noise) depends on the magnetic configuration being enhanced for antiparallel alignment of the ferromagnetic electrod…
▽ More
We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in conductance, the Fano factor (normalized shot noise) depends on the magnetic configuration being enhanced for antiparallel alignment of the ferromagnetic electrodes. We propose a model of sequential tunneling through nonmagnetic and paramagnetic impurity levels inside the tunnel barrier to qualitatively explain the observations.
△ Less
Submitted 15 January, 2007; v1 submitted 20 February, 2006;
originally announced February 2006.
