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Controlling quantum phases with electric fields in one-dimensional Hubbard systems
Authors:
D. Arisa,
R. M. Dos Santos,
Isaac M. Carvalho,
Vivian V. França
Abstract:
Quantum systems under electric fields provide a powerful framework for uncovering and controlling novel quantum phases, especially in low-dimensional systems with strong correlations. In this work, we investigate quantum phase transitions induced by an electric potential difference in a one-dimensional half-filled Hubbard chain. By analyzing (i) tunneling and pairing mechanisms, (ii) charge and sp…
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Quantum systems under electric fields provide a powerful framework for uncovering and controlling novel quantum phases, especially in low-dimensional systems with strong correlations. In this work, we investigate quantum phase transitions induced by an electric potential difference in a one-dimensional half-filled Hubbard chain. By analyzing (i) tunneling and pairing mechanisms, (ii) charge and spin gaps, and (iii) entanglement between the chain halves, we identify three distinct phases: Mott insulator, metal and band-like insulator. The metallic regime, characterized by the closing of both charge and spin gaps, is accompanied by a field-dependent kinetic energy and a quasi-periodic oscillatory behavior of pairing response and entanglement. Although the metallic phase persists for different magnetizations, its extent in the phase diagram shrinks as spin polarization increases.
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Submitted 21 May, 2025;
originally announced May 2025.
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Ant Colony Optimization for Density Functionals in Strongly Correlated Systems
Authors:
G. M. Tonin,
T. Pauletti,
R. M. Dos Santos,
V. V. França
Abstract:
The Ant Colony Optimization (ACO) algorithm is a nature-inspired metaheuristic method used for optimization problems. Although not a machine learning method per se, ACO is often employed alongside machine learning models to enhance performance through optimization. We adapt an ACO algorithm to optimize the so-called FVC density functional for the ground-state energy of strongly correlated systems.…
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The Ant Colony Optimization (ACO) algorithm is a nature-inspired metaheuristic method used for optimization problems. Although not a machine learning method per se, ACO is often employed alongside machine learning models to enhance performance through optimization. We adapt an ACO algorithm to optimize the so-called FVC density functional for the ground-state energy of strongly correlated systems. We find the parameter configurations that maximize optimization efficiency, while reducing the mean relative error ($MRE$) of the ACO functional. We then analyze the algorithm's performance across different dimensionalities ($1D-5D$), which are related to the number of parameters to be optimized within the FVC functional. Our results indicate that $15$ ants with a pheromone evaporation rate superior to $0.2$ are sufficient to minimize the $MRE$ for a vast regime of parameters of the strongly-correlated system -- interaction, particle density and spin magnetization. While the optimizations $1D$, $2D$, and $4D$ yield $1.5\%< MRE< 2.7\%$, the $3D$ and $5D$ optimizations lower the $MRE$ to $\sim0.8\%$, reflecting a $67\%$ error reduction compared to the original FVC functional ($MRE = 2.4\%$). As simulation time grows almost linearly with dimension, our results highlight the potential of ant colony algorithms for density-functional problems, combining effectiveness with low computational cost.
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Submitted 28 April, 2025;
originally announced April 2025.
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Electronic and Structural Properties of Janus SMoSe/MoX$_2$ (X=S,Se) In-plane Heterojunctions: A DFT Study
Authors:
Ramiro M. dos Santos,
Wiliam F. da Cunha,
William F. Giozza,
Rafael T. de Sousa Júnior,
Luiz F. Roncaratti Júnior,
Luiz A. Ribeiro Júnior
Abstract:
The electronic and structural properties of Janus MoSSe/MoX$_2$ (X=S,Se) in-plane heterojunctions, endowed with single-atom vacancies, were studied using density functional theory calculations. The stability of these structures was verified from cohesion energy calculations. Results showed that single-atom vacancies induce the appearance of flat midgap states, and a substantial amount of charge is…
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The electronic and structural properties of Janus MoSSe/MoX$_2$ (X=S,Se) in-plane heterojunctions, endowed with single-atom vacancies, were studied using density functional theory calculations. The stability of these structures was verified from cohesion energy calculations. Results showed that single-atom vacancies induce the appearance of flat midgap states, and a substantial amount of charge is localized in the vicinity of these defects. As a consequence, these heterojunctions presented an intrinsic dipole moment. No bond reconstructions were noted by removing an atom from the lattice, regardless of its chemical species. Our calculations predicted indirect electronic bandgap values between 1.6-1.7 eV.
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Submitted 10 December, 2020;
originally announced December 2020.
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A DFT Study on the Electronic Structure of In-Plane Heterojunctions of Graphene and Hexagonal Boron Nitride Nanoribbons
Authors:
Ramiro M. dos Santos,
William F. Giozza,
Rafael T. de Sousa Júnior,
Demétrio A. da Silva Filho,
Renato B. Santos,
Luiz A. Ribeiro Júnior
Abstract:
The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows for the formation of heterojunctions with small chain stress. The combination of the insulation nature of the former and the quasi-metallic property of the latter makes this kind of heterostructure particularly interesting for flat optoelectronics. Recently, it was experimentally demonstrated that the…
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The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows for the formation of heterojunctions with small chain stress. The combination of the insulation nature of the former and the quasi-metallic property of the latter makes this kind of heterostructure particularly interesting for flat optoelectronics. Recently, it was experimentally demonstrated that the shapes of the graphene and h-BN domains can be controlled precisely, and sharp graphene/h-BN interfaces can be created. Here, we investigated the electronic and structural properties of graphene (h-BN) nanoribbon domains of different sizes sandwiched between h-BN (graphene) nanoribbons forming in-plane heterojunctions. Different domain sizes for the zigzag termination were studied. Results showed that the charge density is localized in the edge of the heterojunctions, regardless of the domain size. These materials presented a metallic nature with a ferromagnetic behavior, which can be useful for magnetic applications at the nanoscale.
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Submitted 7 December, 2020;
originally announced December 2020.
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On the Electronic Structure of a Recently Synthesized Graphene-like BCN Monolayer from bis-BN Cyclohexane: A DFT Study
Authors:
Ramiro M. dos Santos,
William F. Giozza,
Rafael T. de Sousa Júnior,
Demétrio A. da Silva Filho,
Luiz A. Ribeiro Júnior
Abstract:
Since the rising of graphene, boron nitride monolayers have been deeply studied due to their structural similarity with the former. A hexagonal graphene-like boron-carbon-nitrogen (h-BCN) monolayer was synthesized recently using bis-BN cyclohexane (B2N2C2H12) as a precursor molecule. Herein, we investigated the electronic and structural properties of this novel BCN material, in the presence of sin…
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Since the rising of graphene, boron nitride monolayers have been deeply studied due to their structural similarity with the former. A hexagonal graphene-like boron-carbon-nitrogen (h-BCN) monolayer was synthesized recently using bis-BN cyclohexane (B2N2C2H12) as a precursor molecule. Herein, we investigated the electronic and structural properties of this novel BCN material, in the presence of single-atom (boron, carbon, or nitrogen) vacancies, by employing density functional theory calculations. The stability of these vacancy-endowed structures is verified from cohesion energy calculations. Results showed that a carbon atom vacancy strongly distorts the lattice leading to breaking on its planarity and bond reconstructions. The single-atom vacancies induce the appearance of flat midgap states. A significant degree of charge localization takes place in the vicinity of these defects. It was observed a spontaneous magnetization only for the boron-vacancy case, with a magnetic dipole moment about 0.87 mu_B. Our calculations predicted a direct electronic bandgap value of about 1.14 eV, which is in good agreement with the experimental one. Importantly, this bandgap value is intermediate between gapless graphene and insulating h-BN.
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Submitted 26 November, 2020;
originally announced November 2020.
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Predicting the Energetic Stabilization of Janus-MoSSe/AlN Heterostructures: A DFT Study
Authors:
Ramiro M. dos Santos,
Marcelo L. Pereira Junior,
Luiz F. Roncaratti Junior,
Luiz A. Ribeiro Junior
Abstract:
The packing mechanisms between Janus-MoSSe and Aluminum-Nitride (AlN) sheets were systematically investigated by using Density Function Theory calculations. Results show that the stabilization (packing) energies vary from -35.5 up to -17.5 meV depending on the chemical species involved in the interface. The packing energies were obtained using the improved Lennard-Jones (ILJ) potential. The SeMoS/…
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The packing mechanisms between Janus-MoSSe and Aluminum-Nitride (AlN) sheets were systematically investigated by using Density Function Theory calculations. Results show that the stabilization (packing) energies vary from -35.5 up to -17.5 meV depending on the chemical species involved in the interface. The packing energies were obtained using the improved Lennard-Jones (ILJ) potential. The SeMoS/AlN heterostructures, when the MoS face is interacting with the AlN sheet, presented the lowest packing energies due to the sulfur's higher degree of reactivity. Importantly, the calculated bandgap values ranged within the interval 1.61-1.87 eV, which can be interesting for photovoltaic applications.
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Submitted 12 August, 2020;
originally announced August 2020.
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On the Adsorption Mechanism of Caffeine on MAPbI3 Perovskite Surfaces: A Combined UMC--DFT Study
Authors:
Luiz A. Ribeiro Junior,
Raphael M. Tromer,
Ramiro M. dos Santos,
Douglas S. Galvão
Abstract:
Recently, it was experimentally shown that the performance and thermal stability of the perovskite MAPbI$_3$ were improved upon the adsorption of a molecular layer of caffeine. In this work, we used a hybrid methodology that combines Uncoupled Monte Carlo (UMC) and Density Functional Theory (DFT) simulations to carry out a detailed and comprehensive study of the adsorption mechanism of a caffeine…
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Recently, it was experimentally shown that the performance and thermal stability of the perovskite MAPbI$_3$ were improved upon the adsorption of a molecular layer of caffeine. In this work, we used a hybrid methodology that combines Uncoupled Monte Carlo (UMC) and Density Functional Theory (DFT) simulations to carry out a detailed and comprehensive study of the adsorption mechanism of a caffeine molecule on the surface of MAPbI$_3$. Our results showed that the adsorption distance and energy of a caffeine molecule on the MAPbI$_3$ surface are 2.0 Å and -0.3 eV, respectively. The caffeine/MAPbI$_3$ complex presents a direct bandgap of 2.38 eV with two flat intragap bands distanced 1.15 and 2.18 eV from the top of valence bands. Although the energy band levels are not significantly shifted by the presence of caffeine, the interaction MAPbI$_3$/perovskite is enough to affect the bands' dispersion, particularly the conduction bands.
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Submitted 6 April, 2021; v1 submitted 5 August, 2020;
originally announced August 2020.
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Tuning Magnetic Properties of Penta-Graphene Bilayers Through Doping with Boron and Oxygen
Authors:
Ramiro M. dos Santos,
Wiliam F. da Cunha,
Rafael T. de Sousa Junior,
William F. Giozza,
Luiz A. Ribeiro Junior
Abstract:
Penta-graphene (PG) is a carbon allotrope that has recently attracted the attention of the materials science community due to its interesting properties for renewable energy applications. Although unstable in its pure form, it has been shown that functionalization may stabilize its structure. A question that arises is whether its outstanding electronic properties could also be further improved usi…
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Penta-graphene (PG) is a carbon allotrope that has recently attracted the attention of the materials science community due to its interesting properties for renewable energy applications. Although unstable in its pure form, it has been shown that functionalization may stabilize its structure. A question that arises is whether its outstanding electronic properties could also be further improved using such a procedure. As PG bilayers present both sp$^2$ and sp$^3$ carbon planes, it consists of a flexible candidate for functionalization tuning of electromagnetic properties. In this work, we perform density functional theory simulations to investigate how the electronic and structural properties of PG bilayers can be tuned as a result of substitution doping. Specifically, we observed the emergence of different magnetic properties when boron was used as dopant species. On the other hand, in the case of doping with oxygen, the rupture of bonds in the sp$^2$ planes does not induce a magnetic moment in the material.
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Submitted 22 October, 2020; v1 submitted 21 July, 2020;
originally announced July 2020.
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Structural and Electronic Properties of Defective AlN/GaN Hybrid Nanostrutures
Authors:
Ramiro Marcelo dos Santos,
Acrisio Lins de Aguiar,
Jonathan da Rocha Martins,
Renato Batista dos Santos,
Douglas Soares Galvão,
Luiz Antonio Ribeiro Junior
Abstract:
Due to the wide range of possible applications, atomically thin two-dimensional heterostructures have attracted much attention. In this work, using first-principles calculations, we investigated the structural and electronic properties of planar AlN/GaN hybrid heterojunctions with the presence of vacancies at their interfaces. Our results reveal that a single vacant site, produced by the removal o…
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Due to the wide range of possible applications, atomically thin two-dimensional heterostructures have attracted much attention. In this work, using first-principles calculations, we investigated the structural and electronic properties of planar AlN/GaN hybrid heterojunctions with the presence of vacancies at their interfaces. Our results reveal that a single vacant site, produced by the removal of Aluminum or Gallium atom, produces similar electronic band structures with localized states within the bandgap. We have also observed a robust magnetic behavior. A nitrogen-vacancy, on the other hand, induces the formation of midgap states with reduced overall magnetization. We have also investigated nanotubes formed by rolling up these heterojunctions. We observed that tube curvature does not substantially affect the electronic and magnetic properties of their parent AlN/GaN heterojunctions. For armchair-like tubes, a transition from direct to indirect bandgap was observed as a consequence of changing the system geometry from 2D towards a quasi-one-dimensional one. The magnetic features presented by the AlN/GaN defective lattices make them good candidates for developing new spintronic technologies.
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Submitted 28 January, 2020;
originally announced January 2020.
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Tuning Penta-Graphene Electronic Properties Through Engineered Line Defects
Authors:
Ramiro Marcelo dos Santos,
Leonardo Evaristo de Sousa,
Douglas Soares Galvão,
Luiz Antonio Ribeiro Junior
Abstract:
Penta-graphene is a quasi-two-dimensional carbon allotrope consisting of a pentagonal lattice in which both sp2 and sp3-like carbons are present. Unlike graphene, penta-graphene exhibits a non-zero bandgap, which opens the possibility of its use in optoelectronic applications. However, as the observed bandgap is large, gap tuning strategies such as doping are required. In this work, density functi…
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Penta-graphene is a quasi-two-dimensional carbon allotrope consisting of a pentagonal lattice in which both sp2 and sp3-like carbons are present. Unlike graphene, penta-graphene exhibits a non-zero bandgap, which opens the possibility of its use in optoelectronic applications. However, as the observed bandgap is large, gap tuning strategies such as doping are required. In this work, density functional theory calculations are used to determine the effects of the different number of line defects of substitutional nitrogen or silicon atoms on the penta-graphene electronic behavior. Our results show that this doping can induce semiconductor, semimetallic, or metallic behavior depending on the doping atom and targeted hybridization (sp2 or $sp3-like carbons). In particular, we observed that nitrogen doping of sp2-like carbons atoms can produce a bandgap modulation between semimetallic and semiconductor behavior. These results show that engineering line defects can be an effective way to tune penta-graphene electronic behavior.
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Submitted 16 January, 2020;
originally announced January 2020.
