Showing 1–7 of 7 results for author: Santos, E J P

Large-Signal and High--Frequency Analysis of Nonuniformly Doped or Shaped PN-Junction Diodes

Authors: Anatoly A. Barybin, Edval J. P. Santos

Abstract: An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with… ▽ More An analytical theory of non-uniformly doped or shaped PN-junction diodes submitted to large-signals at high frequencies is presented. The resulting expressions can be useful to evaluate the performance of semiconductor device modeling software. The transverse averaging technique is employed to reduce the three-dimensional charge carrier transport equations into the quasi-one-dimensional form, with all physical quantities averaged out over the longitudinally-varying cross section. Although, it is assumed an axial symmetry, this approach gives rise to useful analytic expressions for the static current--voltage characteristics, the diffusion conductance, and diffusion capacitance as a function of the signal amplitude and the cross section non-uniformity. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 14 pages, 3 figures

Journal ref: Journal of Applied Physics 109, 114510 (2011)

Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency

Authors: Maria Augusta R. B. L. Fernandes, Edval J. P. Santos

Abstract: Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times τ_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practica… ▽ More Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times τ_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time $τ_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p\!-\!n$-junction theory. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 7 pages, 7 figures, International Symposium on Microelectronics Technology and Devices, 2014, Aracaju, Brasil. Proceedings of the SBMicro 2014, 2014

Unified Approach to the Large-Signal and High-Frequency Theory of $p-n$-Junctions

Authors: Anatoly A. Barybin, Edval J. P. Santos

Abstract: Spectral approach to the charge carrier transport in $p-n$-junctions has allowed us to revise the theoretical results relating to large signal operation of the junction to make them valid for both the low and high frequencies ranges. The spectral composition of the external circuit current includes both the DC and AC components. The former produces the static current--voltage characteristic with… ▽ More Spectral approach to the charge carrier transport in $p-n$-junctions has allowed us to revise the theoretical results relating to large signal operation of the junction to make them valid for both the low and high frequencies ranges. The spectral composition of the external circuit current includes both the DC and AC components. The former produces the static current--voltage characteristic with the modified Bessel function of zeroth order, $I_0(βV_\sim)$, while the latter yields the dynamic admittance with the modified Bessel function of first order, $I_1(βV_\sim)$, either of them depend on the signal amplitude. Our experimental results are consistent with the theoretical ones if a fitting parameter allowing for recombination processes in the depletion layer is taken into account. △ Less

Submitted 2 October, 2007; originally announced October 2007.

Comments: To appear in Semiconductor Science and Technology

Transverse Averaging Technique for Depletion Capacitance of Nonuniform PN-Junctions

Authors: Anatoly A. Barybin, Edval J. P. Santos

Abstract: This article evolves an analytical theory of nonuniform $PN$-junctions by employing the transverse averaging technique (TAT) to reduce the three-dimensional semiconductor equations to the quasi-one-dimensional (quasi-1D) form involving all physical quantities as averaged over the longitudinally-varying cross section $S(z)$. Solution of the quasi-1D Poisson's equation shows that, besides the usua… ▽ More This article evolves an analytical theory of nonuniform $PN$-junctions by employing the transverse averaging technique (TAT) to reduce the three-dimensional semiconductor equations to the quasi-one-dimensional (quasi-1D) form involving all physical quantities as averaged over the longitudinally-varying cross section $S(z)$. Solution of the quasi-1D Poisson's equation shows that, besides the usual depletion capacitance $C_p$ and $C_n$ due to the $p$- and $n$-layers, there is an additional capacitance $C_s$ produced by nonuniformity of the cross-section area $S(z)$. The general expressions derived yield the particular formulas obtained previously for the abrupt and linearly-graded junctions with uniform cross-section. The quasi-1D theory of nonuniform structures is demonstrated by applying the general formulas to the $PN$-junctions of exponentially-varying cross section $S(z)=S_0\exp(αz)$ as most universal and applicable to any polynomial approximation $S(z)\simeq S_0(1+αz)^n$. △ Less

Submitted 23 January, 2007; originally announced January 2007.

Comments: 12 pages, 2 figures, to appear in Semiconducor Science and Technology

High quality c-axis oriented ZnO thin-film obtained at very low pre-heating temperature

Authors: A. M. P. Santos, Edval J. P. Santos

Abstract: Highly oriented ZnO thin-film has been obtained at a very low pre-heating temperature, with the spin-coating sol-gel technique. The dependence of the c-axis orientation on the pre-heating temperature has been studied with experimental design and response surface techniques to optimize the deposition process with respect to c-axis orientation, and surface uniformity. The optimization variables se… ▽ More Highly oriented ZnO thin-film has been obtained at a very low pre-heating temperature, with the spin-coating sol-gel technique. The dependence of the c-axis orientation on the pre-heating temperature has been studied with experimental design and response surface techniques to optimize the deposition process with respect to c-axis orientation, and surface uniformity. The optimization variables selected for this study are: pre-heating temperature, spin-coating speed and number of coating layers. The films are probed with X-ray diffraction and electron microscopy. △ Less

Submitted 20 November, 2006; originally announced November 2006.

Comments: 5 pages, 5 figures, to appear in Materials Letters

Numerical Analysis of the Stub Transistor

Authors: Alexandre B. Guerra, Edval J. P. Santos

Abstract: Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hami… ▽ More Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The oscillatory behavior of the channel conductance with the applied stub voltage is observed. △ Less

Submitted 8 April, 2003; originally announced April 2003.

Comments: 14 pages, 9 figures

Novel Results on the Large-Signal Dynamic Admittance of $p-n$-Junctions

Authors: Edval J. P. Santos, Anatoly A. Barybin

Abstract: Recent theoretical results obtained by Barybin and Santos have suggested that the dynamic admittance of the $p-n$-junction is proportional to the modified Bessel function of the first kind which depend on an amplitude of ac signal. This result extends the conventional theory usually encountered in known papers and textbooks. In this letter, some experimental results are presented to confirm our… ▽ More Recent theoretical results obtained by Barybin and Santos have suggested that the dynamic admittance of the $p-n$-junction is proportional to the modified Bessel function of the first kind which depend on an amplitude of ac signal. This result extends the conventional theory usually encountered in known papers and textbooks. In this letter, some experimental results are presented to confirm our theoretical prediction. The measurements were performed with a lock-in amplifier, using a low noise operational amplifier. Two types of the $p-n$-diodes were employed to check our theory: 1N914B diode, typically used for high-frequency applications, and 1N4007 diode, typically used in power supplies. Experimental results are consistent with the theoretical ones if a fitting parameter allowing for generation--recombination processes in the depletion layer is taken into account. △ Less

Submitted 29 April, 2002; originally announced April 2002.

Comments: 11 pages, latex (RevTeX4), 4 postscript figures Laboratory for Devices and Nanostructures at the Departamento de Eletronica e Sistemas, Universidade Federal de Pernambuco, 50740-530, Recife, Brazil. E-mail: [email protected]