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Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene
Authors:
Ngoc Thanh Mai Tran,
Swapnil M. Mhatre,
Cristiane N. Santos,
Adam J. Biacchi,
Mathew L. Kelley,
Heather M. Hill,
Dipanjan Saha,
Chi-Te Liang,
Randolph E. Elmquist,
David B. Newell,
Benoit Hackens,
Christina A. Hacker,
Albert F. Rigosi
Abstract:
This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device proces…
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This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.
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Submitted 15 April, 2022;
originally announced April 2022.
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The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition
Authors:
Nicolas Reckinger,
Alexandre Felten,
Cristiane Nascimento Santos,
Benoît Hackens,
Jean-François Colomer
Abstract:
The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on t…
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The growth of graphene on copper by atmospheric pressure chemical vapor deposition in a system free of pumping equipment is investigated. The emphasis is put on the necessity of hydrogen presence during graphene synthesis and cooling. In the absence of hydrogen during the growth step or cooling at slow rate, weak carbon coverage, consisting mostly of oxidized and amorphous carbon, is obtained on the copper catalyst. The oxidation originates from the inevitable occurrence of residual oxidizing impurities in the reactor's atmosphere. Graphene with appreciable coverage can be grown within the vacuum-free furnace only upon admitting hydrogen during the growth step. After formation, it is preserved from the destructive effect of residual oxidizing contaminants once exposure at high temperature is minimized by fast cooling or hydrogen flow. Under these conditions, micrometer-sized hexagon-shaped graphene domains of high structural quality are achieved.
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Submitted 15 June, 2013; v1 submitted 16 March, 2013;
originally announced March 2013.
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Twisted bi-layer graphene: microscopic rainbows
Authors:
J. Campos-Delgado,
G. Algara-Siller,
C. N. Santos,
U. Kaiser,
J. -P. Raskin
Abstract:
Twisted bi-layer graphene (tBLG) has recently attracted interest due to the peculiar electrical properties that arise from its random rotational configurations. Our experiments on CVD-grown graphene from Cu foil and transferred onto Si substrates, with an oxide layer of 100 nm, reveal naturally-produced bi-layer graphene patches which present different colorations when shined with white light. In…
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Twisted bi-layer graphene (tBLG) has recently attracted interest due to the peculiar electrical properties that arise from its random rotational configurations. Our experiments on CVD-grown graphene from Cu foil and transferred onto Si substrates, with an oxide layer of 100 nm, reveal naturally-produced bi-layer graphene patches which present different colorations when shined with white light. In particular yellow-, pink- and blue- colored areas are evidenced. Combining optical microscopy, Raman spectroscopy and transmission electron microscopy we have been able to assign these colorations to ranges of rotational angles between the two graphene layers. Optical contrast simulations have been carried out, proving that the observation of the different colorations is due to the angle-dependent electronic properties of tBLG combined with the reflection that results from the layered structure tBLG / 100 nm-thick SiO2 / Si. Our results could lead the way to an easy selective identification of bi-layer graphene merely through the observation on an optical microscope.
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Submitted 16 April, 2013; v1 submitted 16 February, 2013;
originally announced February 2013.
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Infrared emissivity spectroscopy of a soda-lime silicate glass up to the melt
Authors:
Cristiane N. Santos,
Domingos de S. Meneses,
Valérie Montouillout,
Patrick Echegut
Abstract:
The short-range structure of an iron doped soda-lime glass was investigated by infrared emissivity spectroscopy from room temperature up to the melt. Quantitative information on the distribution of the Q^n tetrahedral units was obtained by fitting the emissivity spectra using a dielectric function model (DFM). The DFM is based on causal Gaussian bands, associated with the stretching motions of the…
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The short-range structure of an iron doped soda-lime glass was investigated by infrared emissivity spectroscopy from room temperature up to the melt. Quantitative information on the distribution of the Q^n tetrahedral units was obtained by fitting the emissivity spectra using a dielectric function model (DFM). The DFM is based on causal Gaussian bands, associated with the stretching motions of the silicate tetrahedra. The changes in the absorption modes are related to the activation of a dynamical disorder that continuously increases with temperature. The obtained Q^n speciation at room temperature is in good agreement with the magic-angle spinning nuclear magnetic resonance (MAS NMR) study. The distribution of the tetrahedral species undergoes slight changes with temperature, except during glass crystallization where Q^4 units increases, with a slight augmentation of Q^2 and Q^4 units in the melt. These results demonstrate the potentiality of infrared spectroscopy in the quantitative analysis of the polymerization degree of glasses and melts.
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Submitted 26 January, 2012;
originally announced January 2012.
