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Synergistic Effects of Spin-Orbit Coupling and Intercomponent Interactions in Two-Component (2+1)D Photonic Fields
Authors:
Suri Deekshita,
S. Sanjay,
S. Saravana Veni,
Conrad B. Tabi,
Timoleon C. Kofane
Abstract:
The study investigates the formation, stability and dynamic advancement of two-dimensional vortex quantum droplets within binary Bose-Einstein condensates (BECs), shaped by the interplay of photonic spin-orbit coupling (SOC) and quantum fluctuation effects. SOC leads to significant droplet stretching, resulting in vortex clusters forming in each component. The competition between photonic SOC and…
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The study investigates the formation, stability and dynamic advancement of two-dimensional vortex quantum droplets within binary Bose-Einstein condensates (BECs), shaped by the interplay of photonic spin-orbit coupling (SOC) and quantum fluctuation effects. SOC leads to significant droplet stretching, resulting in vortex clusters forming in each component. The competition between photonic SOC and Lee-Huang-Yang (LHY) interactions introduces vortices into the condensate, described by the numerically solved Gross-Pitaevskii equation (GPE). The results show that droplets like structures arise at low SOC strengths and interaction parameters. The transition to vortex takes place as the SOC increases. Enhanced interactions give rise to the emergence of quantum droplets as the vortices dissipate, demonstrating fascinating dynamics. These findings enhance understanding of the physical properties of photonic SOC coupled binary BECs in 2D with LHY correction, impacting cold-atom physics and condensed matter research. The study can also be expanded to explore quantum droplets with a small atom count, which is advantageous for experimental applications.
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Submitted 3 July, 2025;
originally announced July 2025.
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Hafnia-based Phase-Change Ferroelectric Steep-Switching FETs on a 2-D MoS$_2$ platform
Authors:
Sooraj Sanjay,
Jalaja M. A,
Navakanta Bhat,
Pavan Nukala
Abstract:
Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for steep switching applications. Our gate stack is engineered as a ferroelectric Lanthanum doped hafnium oxide (LHO) proximity coupled with Mott insulator Ti$_x$O…
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Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for steep switching applications. Our gate stack is engineered as a ferroelectric Lanthanum doped hafnium oxide (LHO) proximity coupled with Mott insulator Ti$_x$O$_{2x-1}$(N$_y$) and is integrated onto a 2D MoS$_2$ channel. The interplay of partial polarization switching in the ferroelectric LHO layer and reversible field-tunable metal-insulator transition (MIT) in Ti$_x$O$_{2x-1}$(N$_y$) layer concomitantly triggers polar to non-polar phase transition in the LHO layer between 200 and 220 K. This results in distinctive step-like features in the channel current during DC measurements, and random current fluctuations in high-speed measurements with slim anticlockwise hysteresis. Our devices show subthreshold slopes as steep as 25 mV/dec at 210 K, breaking the Boltzmann limit. Our gate stack is also potentially tunable for operation at temperatures of interest, presenting innovative gate stack engineering approaches for low-power computing solutions.
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Submitted 4 November, 2024;
originally announced November 2024.
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Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform
Authors:
Ankit Rao,
Sooraj Sanjay,
Majid Ahmadi,
Anirudh Venugopalrao,
Navakanta Bhat,
Bart Kooi,
Srinivasan Raghavan,
Pavan Nukala
Abstract:
Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag),…
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Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag), that can uniquely host two different self-assembled networks, which are self-organized at criticality (SOC). This system shows bipolar resistive switching between high resistance (HRS) and low resistance states (LRS). In the HRS, Ag clusters (nodes) intercalate in the van der Waals gaps of hBN forming a network of tunnel junctions, whereas the LRS contains a network of Ag filaments. The temporal avalanche dynamics in both these states exhibit power-law scaling, long-range temporal correlation, and SOC. These networks can be tuned from one to another with voltage as a control parameter. For the first time, different neuron-like networks are realized in a single CMOS compatible, 2D materials platform.
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Submitted 7 December, 2022;
originally announced January 2023.
