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Tuneable spin injection in high-quality graphene with one-dimensional contacts
Authors:
Victor H. Guarochico-Moreira,
Jose L. Sambricio,
Khalid Omari,
Christopher R. Anderson,
Denis A. Bandurin,
Jesus C. Toscano-Figueroa,
Noel Natera-Cordero,
Kenji Watanabe,
Takashi Taniguchi,
Irina V. Grigorieva,
Ivan J. Vera-Marun
Abstract:
Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eli…
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Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tuneable spin signal in fully-encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130,000 cm$^2$V$^{-1}$s$^{-1}$ and spin diffusion lengths approaching 20 $μ$m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.
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Submitted 21 January, 2022; v1 submitted 18 September, 2021;
originally announced September 2021.
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Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers
Authors:
Pablo U. Asshoff,
Jose L. Sambricio,
Sergey Slizovskiy,
Aidan P. Rooney,
Takashi Taniguchi,
Kenji Watanabe,
Sarah J. Haigh,
Vladimir Fal'ko,
Irina V. Grigorieva,
Ivan J. Vera-Marun
Abstract:
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effec…
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Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modelling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door towards exploiting the spin degree of freedom in current studies of point defects as quantum emitters.
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Submitted 3 October, 2018;
originally announced October 2018.
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Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene
Authors:
P. U. Asshoff,
J. L. Sambricio,
A. P. Rooney,
S. Slizovskiy,
A. Mishchenko,
A. M. Rakowski,
E. W. Hill,
A. K. Geim,
S. J. Haigh,
V. I. Fal'ko,
I. J. Vera-Marun,
I. V. Grigorieva
Abstract:
Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the m…
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Graphene is hailed as an ideal material for spintronics due to weak intrinsic spin-orbit interaction that facilitates lateral spin transport and tunability of its electronic properties, including a possibility to induce magnetism in graphene. Another promising application of graphene is related to its use as a spacer separating ferromagnetic metals (FMs) in vertical magnetoresistive devices, the most prominent class of spintronic devices widely used as magnetic sensors. In particular, few-layer graphene was predicted to act as a perfect spin filter. Here we show that the role of graphene in such devices (at least in the absence of epitaxial alignment between graphene and the FMs) is different and determined by proximity-induced spin splitting and charge transfer with adjacent ferromagnetic metals, making graphene a weak FM electrode rather than a spin filter. To this end, we report observations of magnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4 graphene layers separating the ferromagnets, and demonstrate that the dependence of the MR sign on the number of layers and its inversion at relatively small bias voltages is consistent with spin transport between weakly doped and differently spin-polarized layers of graphene. The proposed interpretation is supported by the observation of an MR sign reversal in biased Co-graphene-hBN-NiFe devices and by comprehensive structural characterization. Our results suggest a new architecture for vertical devices with electrically controlled MR.
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Submitted 16 June, 2017; v1 submitted 4 July, 2016;
originally announced July 2016.
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Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis
Authors:
J. P. Cascales,
D. Herranz,
J. L. Sambricio,
U. Ebels,
J. A. Katine,
F. G. Aliev
Abstract:
We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at DC current densities as low as 4*106A/cm2. We attribute the low value of the cr…
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We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at DC current densities as low as 4*106A/cm2. We attribute the low value of the critical current to the influence of localized reductions in the tunnel barrier, which affects the current distribution. The analysis of random telegraph noise, which appears in the field interval near a magnetization switch, provides an estimate to the dimension of the pseudo pinholes that trigger the magnetization switching via local spin torque. Micromagnetic simulations qualitatively and quantitatively reproduce the main experimental observations.
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Submitted 27 May, 2013;
originally announced May 2013.
