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Operando Ultrafast Damage-free Diffraction-Enhanced X-ray Absorption Spectroscopy for Chemical Reactivity of Polymer in Solvents
Authors:
Zhengxing Peng,
Antoine Lainé,
Ka Chon Ng,
Mutian Hua,
Brett A. Helms,
Miquel B. Salmeron,
Cheng Wang
Abstract:
Chemical recycling of plastics to its constituent monomers is a promising solution to develop a sustainable circular plastic economy. An in-situ X-ray absorption spectra (XAS) characterization is an important way to understand the deconstruction process. However, radiation damage, and long acquisition time, prevent such characterization for fast chemical process. Here, we present a novel experimen…
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Chemical recycling of plastics to its constituent monomers is a promising solution to develop a sustainable circular plastic economy. An in-situ X-ray absorption spectra (XAS) characterization is an important way to understand the deconstruction process. However, radiation damage, and long acquisition time, prevent such characterization for fast chemical process. Here, we present a novel experimental technique, which we name Diffraction-Enhanced X-ray Absorption Spectroscopy (DE-XAS), where the plastic material is supported on a graphene layer covering a periodic pattern of holes in a perforated SiNx membrane. The XAS is obtained by measuring the energy-dependent intensity of the X-ray diffracted beams going through the plastic film over the holes in the SiNx membrane. Our method decreases beam damage by orders of magnitude while providing good signal/noise ratio data. We demonstrate the suppression of beam damage with samples of polymethyl methacrylate (PMMA) and the operando characterization of polymer deconstruction process in acid with polydiketoenamine (PDK). This proof-of-concept of the DE-XAS technique shows its great potential for studying fast chemical processes, picoseconds to nanoseconds, using fast CCD detectors with short readout time. We believe the DE-XAS technique offers opportunities for studies of chemical reactions, e.g., photoresist, and many others.
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Submitted 30 September, 2024;
originally announced October 2024.
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Two-dimensional silk
Authors:
Chenyang Shi,
Marlo Zorman,
Xiao Zhao,
Miquel B. Salmeron,
Jim Pfaendtner,
Xiang Yang Liu,
Shuai Zhang,
James De Yoreo
Abstract:
The ability to form silk films on semiconductors, metals, and oxides or as free-standing membranes has motivated research into silk-based electronic, optical, and biomedical devices. However, the inherent disorder of native silk limits device performance. Here we report the creation of highly ordered two-dimensional (2D) silk fibroin (SF) layers on van der Waals solids. Using in situ atomic force…
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The ability to form silk films on semiconductors, metals, and oxides or as free-standing membranes has motivated research into silk-based electronic, optical, and biomedical devices. However, the inherent disorder of native silk limits device performance. Here we report the creation of highly ordered two-dimensional (2D) silk fibroin (SF) layers on van der Waals solids. Using in situ atomic force microscopy, synchrotron-based infrared spectroscopy, and molecular dynamics simulations, we develop a mechanistic understanding of the assembly process. We show that the films consist of lamellae having an epitaxial relationship with the underlying lattice and that the SF molecules exhibit the same Beta-sheet secondary structure seen in the crystallites of the native form. By increasing the SF concentration, multilayer films form via layer-by-layer growth, either along a classical pathway in which SF molecules assemble directly into the lamellae or, at sufficiently high concentrations, along a two-step pathway beginning with formation of a disordered monolayer that subsequently converts into the crystalline phase. Kelvin probe measurements show that these 2D SF layers substantially alter the surface potential. Moreover, the ability to assemble 2D silk on both graphite and MoS2 suggests that it may provide a general platform for silk-based electronics on vdW solids.
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Submitted 22 January, 2024;
originally announced January 2024.
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Observation of charge density wave order in 1D mirror twin boundaries of single-layer MoSe2
Authors:
Sara Barja,
Sebastian Wickenburg,
Zhen-Fei Liu,
Yi Zhang,
Hyejin Ryu,
Miguel M. Ugeda,
Zahid Hussain,
Z. -X. Shen,
Sung-Kwan Mo,
Ed Wong,
Miquel B. Salmeron,
Feng Wang,
Michael F. Crommie,
D. Frank Ogletree,
Jeffrey B. Neaton,
Alexander Weber-Bargioni
Abstract:
Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2…
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Properties of two-dimensional transition metal dichalcogenides are highly sensitive to the presence of defects in the crystal structure. A detailed understanding of defect structure may lead to control of material properties through defect engineering. Here we provide direct evidence for the existence of isolated, one-dimensional charge density waves at mirror twin boundaries in single-layer MoSe2. Our low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a substantial bandgap of 60 - 140 meV opening at the Fermi level in the otherwise one dimensional metallic structure. We find an energy-dependent periodic modulation in the density of states along the mirror twin boundary, with a wavelength of approximately three lattice constants. The modulations in the density of states above and below the Fermi level are spatially out of phase, consistent with charge density wave order. In addition to the electronic characterization, we determine the atomic structure and bonding configuration of the one-dimensional mirror twin boundary by means of high-resolution non-contact atomic force microscopy. Density functional theory calculations reproduce both the gap opening and the modulations of the density of states.
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Submitted 17 March, 2016;
originally announced March 2016.
