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Showing 1–11 of 11 results for author: Salazar, C

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  1. arXiv:2506.01204  [pdf, ps, other

    quant-ph cond-mat.str-el physics.comp-ph

    Quantum-Classical Embedding via Ghost Gutzwiller Approximation for Enhanced Simulations of Correlated Electron Systems

    Authors: I-Chi Chen, Aleksei Khindanov, Carlos Salazar, Humberto Munoz Barona, Feng Zhang, Cai-Zhuang Wang, Thomas Iadecola, Nicola Lanatà, Yong-Xin Yao

    Abstract: Simulating correlated materials on present-day quantum hardware remains challenging due to limited quantum resources. Quantum embedding methods offer a promising route by reducing computational complexity through the mapping of bulk systems onto effective impurity models, allowing more feasible simulations on pre- and early-fault-tolerant quantum devices. This work develops a quantum-classical emb… ▽ More

    Submitted 1 June, 2025; originally announced June 2025.

    Comments: 15 pages, 5 figures

  2. arXiv:2407.05931  [pdf, other

    cond-mat.stat-mech cond-mat.mtrl-sci cond-mat.soft physics.chem-ph physics.comp-ph

    Competing nucleation pathways in nanocrystal formation

    Authors: Carlos R. Salazar, Akshay Krishna Ammothum Kandy, Jean Furstoss, Quentin Gromoff, Jacek Goniakowski, Julien Lam

    Abstract: Despite numerous efforts from numerical approaches to complement experimental measurements, several fundamental challenges have still hindered one's ability to truly provide an atomistic picture of the nucleation process in nanocrystals. Among them, our study resolves three obstacles: (1) Machine-learning force fields including long-range interactions able to capture the finesse of the underlying… ▽ More

    Submitted 8 July, 2024; originally announced July 2024.

  3. arXiv:2211.03366  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking

    Authors: Edy Cardona, Matthew K. Horton, Daniel Paulo-Wach, Anthony C. Salazar, Andre Palacios Duran, James Chavez, Shaul Aloni, Junqiao Wu, Oscar D. Dubon

    Abstract: Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered alloys made from the gallium monochalcogenides GaS, GaSe, and GaTe, near-continuous tuning of the energy bandgap across the full composition range has been achiev… ▽ More

    Submitted 7 November, 2022; originally announced November 2022.

  4. Absence of hexagonal to square structural transition in LiFeAs vortex matter

    Authors: Sven Hoffmann, Ronny Schlegel, Christian Salazar, Steffen Sykora, Pranab Kumar Nag, Pavlo Khanenko, Robert Beck, Saicharan Aswartham, Sabine Wurmehl, Bernd Büchner, Yanina Fasano, Christian Hess

    Abstract: We investigated magnetic vortices in two stoichiometric LiFeAs samples by means of scanning tunneling microscopy and spectroscopy. The vortices were revealed by measuring the local electronic density of states (LDOS) at zero bias conductance of samples in magnetic fields between 0.5 and 12 T. From single vortex spectroscopy we extract the Ginzburg-Landau coherence length of both samples as… ▽ More

    Submitted 5 October, 2022; originally announced October 2022.

    Journal ref: Phys. Rev. B 106, 134507 (2022)

  5. Spectroscopic evidence of nematic fluctuations in LiFeAs

    Authors: Zhixiang Sun, Pranab Kumar Nag, Steffen Sykora, Jose M. Guevara, Sven Hoffmann, Christian Salazar, Torben Hänke, Rhea Kappenberger, Sabine Wurmehl, Bernd Büchner, Christian Hess

    Abstract: The role of nematic fluctuations in the pairing mechanism of iron-based superconductors is frequently debated. Here we present a novel method to reveal such fluctuations by identifying energy and momentum of the corresponding nematic boson through the detection of a boson-assisted resonant amplification of Friedel oscillations. Using Fourier-transform scanning tunneling spectroscopy, we observe fo… ▽ More

    Submitted 8 November, 2018; originally announced November 2018.

    Journal ref: Phys. Rev. B 100, 024506 (2019)

  6. Quantum Interference Control of Carriers and Currents in Zincblende Semiconductors based on Nonlinear Absorption Processes

    Authors: Rodrigo A. Muniz, Cuauhtémoc Salazar, Kai Wang, S. T. Cundiff, J. E. Sipe

    Abstract: Quantum interference between optical absorption processes can excite carriers with a polarized distribution in the Brillouin zone depending on properties of the incident optical fields. The polarized distribution of carriers introduces a current that can be controlled by the phases and polarizations of the incident optical fields. Here we study the quantum interference of 2- and 3-photon absorptio… ▽ More

    Submitted 19 June, 2019; v1 submitted 20 August, 2018; originally announced August 2018.

    Journal ref: Phys. Rev. B 100, 075202 (2019)

  7. arXiv:1805.06273  [pdf, other

    cond-mat.str-el cond-mat.mes-hall

    An ultra-high vacuum scanning tunneling microscope operating at sub-Kelvin temperatures and high magnetic fields for spin-resolved measurements

    Authors: C. Salazar, D. Baumann, T. Hänke, M. Scheffler, T. Kühne, M. Kaiser, R. Voigtländer, D. Lindackers, B. Büchner, C. Hess

    Abstract: We present the construction and performance of an ultra-low temperature scanning tunneling microscope (STM), working in ultra-high vacuum conditions (UHV) and in high magnetic fields up to 9 T. The cryogenic environment of the STM is generated by a single shot $^3$He magnet cryostat in combination with a $^4$He dewar system. At base temperature (300~mK), the cryostat has an operation time of appro… ▽ More

    Submitted 16 May, 2018; originally announced May 2018.

    Comments: 12 pages, 16 figures

    Journal ref: Rev. Sci. Inst. 89, 065104 (2018)

  8. Stress modulated optical spin-injection in bulk semiconductors

    Authors: Jose Luis Cabellos, Cuauhtemoc Salazar, Bernardo S. Mendoza

    Abstract: A full band-structure ab initio calculation of the degree of spin polarization (DSP) in stressed bulk Si and bulk GaAs is reported. For Si, we found that compressive stress causes the DSP signal peak to decrease slightly in magnitude and to shift to higher energies.

    Submitted 3 April, 2018; originally announced April 2018.

    Journal ref: Phys. Rev. B 80, 245204 December 2009

  9. Coherent control of current injection in zigzag graphene nanoribbons

    Authors: Cuauhtémoc Salazar, J. L. Cheng, J. E. Sipe

    Abstract: We present Fermi's golden rule calculations of the optical carrier injection and the coherent control of current injection in graphene nanoribbons with zigzag geometry, using an envelope function approach. This system possesses strongly localized states (flat bands) with a large joint density of states at low photon energies; for ribbons with widths above a few tens of nanometers, this system also… ▽ More

    Submitted 27 September, 2017; v1 submitted 7 June, 2017; originally announced June 2017.

    Journal ref: Physics. Rev. B (93) 075442 (2016)

  10. arXiv:1706.01028  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall physics.optics

    An effective model for the electronic and optical properties of stanene

    Authors: Cuauhtémoc Salazar, Rodrigo A. Muniz, J. E. Sipe

    Abstract: The existence of several 2D materials with heavy atoms in their composition has been recently demonstrated. The electronic and optical properties of these materials can be accurately computed with numerically intensive density functional theory methods. However, it is desirable to have simple effective models that can accurately describe these properties at low energies. Here we present an effecti… ▽ More

    Submitted 27 September, 2017; v1 submitted 4 June, 2017; originally announced June 2017.

    Comments: 13 pages, 7 figures

    Journal ref: Phys. Rev. Materials 1, 054006 (2017)

  11. arXiv:1310.3613  [pdf, other

    cond-mat.other

    Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

    Authors: P. Stoliar, P. Levy, M. J. Sánchez, A. G. Leyva, C. A. Albornoz, F. Gomez-Marlasca, A. Zanini, C. Toro Salazar, N. Ghenzi, M. J. Rozenberg

    Abstract: We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS devi… ▽ More

    Submitted 14 October, 2013; originally announced October 2013.

    Comments: Accepted for publication in the IEEE Transactions on CAS II