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Quantum-Classical Embedding via Ghost Gutzwiller Approximation for Enhanced Simulations of Correlated Electron Systems
Authors:
I-Chi Chen,
Aleksei Khindanov,
Carlos Salazar,
Humberto Munoz Barona,
Feng Zhang,
Cai-Zhuang Wang,
Thomas Iadecola,
Nicola Lanatà,
Yong-Xin Yao
Abstract:
Simulating correlated materials on present-day quantum hardware remains challenging due to limited quantum resources. Quantum embedding methods offer a promising route by reducing computational complexity through the mapping of bulk systems onto effective impurity models, allowing more feasible simulations on pre- and early-fault-tolerant quantum devices. This work develops a quantum-classical emb…
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Simulating correlated materials on present-day quantum hardware remains challenging due to limited quantum resources. Quantum embedding methods offer a promising route by reducing computational complexity through the mapping of bulk systems onto effective impurity models, allowing more feasible simulations on pre- and early-fault-tolerant quantum devices. This work develops a quantum-classical embedding framework based on the ghost Gutzwiller approximation to enable quantum-enhanced simulations of ground-state properties and spectral functions of correlated electron systems. Circuit complexity is analyzed using an adaptive variational quantum algorithm on a statevector simulator, applied to the infinite-dimensional Hubbard model with increasing ghost mode numbers from 3 to 5, resulting in circuit depths growing from 16 to 104. Noise effects are examined using a realistic error model, revealing significant impact on the spectral weight of the Hubbard bands. To mitigate these effects, the Iceberg quantum error detection code is employed, achieving up to 40% error reduction in simulations. Finally, the accuracy of the density matrix estimation is benchmarked on IBM and Quantinuum quantum hardware, featuring distinct qubit-connectivity and employing multiple levels of error mitigation techniques.
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Submitted 1 June, 2025;
originally announced June 2025.
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Competing nucleation pathways in nanocrystal formation
Authors:
Carlos R. Salazar,
Akshay Krishna Ammothum Kandy,
Jean Furstoss,
Quentin Gromoff,
Jacek Goniakowski,
Julien Lam
Abstract:
Despite numerous efforts from numerical approaches to complement experimental measurements, several fundamental challenges have still hindered one's ability to truly provide an atomistic picture of the nucleation process in nanocrystals. Among them, our study resolves three obstacles: (1) Machine-learning force fields including long-range interactions able to capture the finesse of the underlying…
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Despite numerous efforts from numerical approaches to complement experimental measurements, several fundamental challenges have still hindered one's ability to truly provide an atomistic picture of the nucleation process in nanocrystals. Among them, our study resolves three obstacles: (1) Machine-learning force fields including long-range interactions able to capture the finesse of the underlying atomic interactions, (2) Data-driven characterization of the local ordering in a complex structural landscape associated with several crystal polymorphs and (3) Comparing results from a large range of temperatures using both brute-force and rare-event sampling. Altogether, our simulation strategy has allowed us to study zinc oxide crystallization from nano-droplet melt. Remarkably, our results show that different nucleation pathways compete depending on the investigated degree of supercooling.
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Submitted 8 July, 2024;
originally announced July 2024.
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Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking
Authors:
Edy Cardona,
Matthew K. Horton,
Daniel Paulo-Wach,
Anthony C. Salazar,
Andre Palacios Duran,
James Chavez,
Shaul Aloni,
Junqiao Wu,
Oscar D. Dubon
Abstract:
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered alloys made from the gallium monochalcogenides GaS, GaSe, and GaTe, near-continuous tuning of the energy bandgap across the full composition range has been achiev…
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Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered alloys made from the gallium monochalcogenides GaS, GaSe, and GaTe, near-continuous tuning of the energy bandgap across the full composition range has been achieved in GaSe1-xSx and GaSe1-xTex alloys. Gold-catalyzed vapor-liquid-solid (VLS) growth of these alloys yields predominantly nanobelts, nanoribbons and other nanostructures for which the fast crystal growth front consists of layer edges in contact with the catalyst. We demonstrate that in the S-rich, GaS1-xTex system, unlike GaSe1-xSx and GaSe1-xTex, the Au-catalyzed VLS process yields van der Waals nanowires for which the fast growth direction is normal to the layers. The high mismatch between S and Te leads to extraordinary bowing of the GaS1-xTex alloy's energy bandgap, decreasing by at least 0.6 eV for x as small as 0.03. Calculations using density functional theory confirm the significant decrease in bandgap in S-rich GaS1-xTex. The nanowires can exceed fifty micrometers in length, consisting of tens of thousands of van der Waals-bonded layers with triangular or hexagonal cross-sections of uniform dimensions along the length of the nanowire. We propose that the low solubility of Te in GaS results in an enhancement in Te coverage around the Au catalyst-nanowire interface, confining the catalyst to the chalcogen-terminated basal plane (rather than the edges) and thereby enabling layer-by-layer, c-axis growth.
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Submitted 7 November, 2022;
originally announced November 2022.
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Absence of hexagonal to square structural transition in LiFeAs vortex matter
Authors:
Sven Hoffmann,
Ronny Schlegel,
Christian Salazar,
Steffen Sykora,
Pranab Kumar Nag,
Pavlo Khanenko,
Robert Beck,
Saicharan Aswartham,
Sabine Wurmehl,
Bernd Büchner,
Yanina Fasano,
Christian Hess
Abstract:
We investigated magnetic vortices in two stoichiometric LiFeAs samples by means of scanning tunneling microscopy and spectroscopy. The vortices were revealed by measuring the local electronic density of states (LDOS) at zero bias conductance of samples in magnetic fields between 0.5 and 12 T. From single vortex spectroscopy we extract the Ginzburg-Landau coherence length of both samples as…
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We investigated magnetic vortices in two stoichiometric LiFeAs samples by means of scanning tunneling microscopy and spectroscopy. The vortices were revealed by measuring the local electronic density of states (LDOS) at zero bias conductance of samples in magnetic fields between 0.5 and 12 T. From single vortex spectroscopy we extract the Ginzburg-Landau coherence length of both samples as $4.4\pm0.5$ nm and $4.1\pm0.5$ nm, in accordance with previous findings. However, in contrast to previous reports, our study reveals that the reported hexagonal to square-like vortex lattice transition is absent up to 12 T both in field-cooling and zero-field-cooling processes. Remarkably, a highly ordered zero field cooled hexagonal vortex lattice is observed up to 8 T. We argue that several factors are likely to determine the structure of the vortex lattice in LiFeAs such as (i) details of the cooling procedure (ii) sample stoichiometry that alters the formation of nematic fluctuations, (iii) details of the order parameter and (iv) magnetoelastic coupling.
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Submitted 5 October, 2022;
originally announced October 2022.
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Spectroscopic evidence of nematic fluctuations in LiFeAs
Authors:
Zhixiang Sun,
Pranab Kumar Nag,
Steffen Sykora,
Jose M. Guevara,
Sven Hoffmann,
Christian Salazar,
Torben Hänke,
Rhea Kappenberger,
Sabine Wurmehl,
Bernd Büchner,
Christian Hess
Abstract:
The role of nematic fluctuations in the pairing mechanism of iron-based superconductors is frequently debated. Here we present a novel method to reveal such fluctuations by identifying energy and momentum of the corresponding nematic boson through the detection of a boson-assisted resonant amplification of Friedel oscillations. Using Fourier-transform scanning tunneling spectroscopy, we observe fo…
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The role of nematic fluctuations in the pairing mechanism of iron-based superconductors is frequently debated. Here we present a novel method to reveal such fluctuations by identifying energy and momentum of the corresponding nematic boson through the detection of a boson-assisted resonant amplification of Friedel oscillations. Using Fourier-transform scanning tunneling spectroscopy, we observe for the unconventional superconductor LiFeAs strong signatures of bosonic states at momentum $q\sim 0$ and energy $Ω\approx8$~meV. We show that these bosonic states survive in the normal conducting state, and, moreover, that they are in perfect agreement with well-known strong above-gap anomalies in the tunneling spectra. Attributing these small-$q$ boson modes to nematic fluctuations we provide the first spectroscopic approach to the nematic boson in an unconventional superconductor.
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Submitted 8 November, 2018;
originally announced November 2018.
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Quantum Interference Control of Carriers and Currents in Zincblende Semiconductors based on Nonlinear Absorption Processes
Authors:
Rodrigo A. Muniz,
Cuauhtémoc Salazar,
Kai Wang,
S. T. Cundiff,
J. E. Sipe
Abstract:
Quantum interference between optical absorption processes can excite carriers with a polarized distribution in the Brillouin zone depending on properties of the incident optical fields. The polarized distribution of carriers introduces a current that can be controlled by the phases and polarizations of the incident optical fields. Here we study the quantum interference of 2- and 3-photon absorptio…
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Quantum interference between optical absorption processes can excite carriers with a polarized distribution in the Brillouin zone depending on properties of the incident optical fields. The polarized distribution of carriers introduces a current that can be controlled by the phases and polarizations of the incident optical fields. Here we study the quantum interference of 2- and 3-photon absorption processes in AlGaAs. We present theoretical predictions for carrier and current injection rates considering different frequencies, phases, and polarizations of the incident fields. We also discuss the important features that result from only nonlinear optical processes being involved, which leads for instance to a sharper distribution of carriers in the Brillouin zone.
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Submitted 19 June, 2019; v1 submitted 20 August, 2018;
originally announced August 2018.
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An ultra-high vacuum scanning tunneling microscope operating at sub-Kelvin temperatures and high magnetic fields for spin-resolved measurements
Authors:
C. Salazar,
D. Baumann,
T. Hänke,
M. Scheffler,
T. Kühne,
M. Kaiser,
R. Voigtländer,
D. Lindackers,
B. Büchner,
C. Hess
Abstract:
We present the construction and performance of an ultra-low temperature scanning tunneling microscope (STM), working in ultra-high vacuum conditions (UHV) and in high magnetic fields up to 9 T. The cryogenic environment of the STM is generated by a single shot $^3$He magnet cryostat in combination with a $^4$He dewar system. At base temperature (300~mK), the cryostat has an operation time of appro…
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We present the construction and performance of an ultra-low temperature scanning tunneling microscope (STM), working in ultra-high vacuum conditions (UHV) and in high magnetic fields up to 9 T. The cryogenic environment of the STM is generated by a single shot $^3$He magnet cryostat in combination with a $^4$He dewar system. At base temperature (300~mK), the cryostat has an operation time of approximately 80 hours. The special design of the microscope allows the transfer of the STM head from the cryostat to a UHV-chamber system, where samples and STM-tips can be easily exchanged. The UHV chambers are equipped with specific surface science treatment tools for the functionalization of samples and tips, including high-temperature treatments and thin film deposition. This, particularly, enables spin-resolved tunneling measurements. We present test measurements using well known samples and tips based on superconductor and metallic materials such as LiFeAs, Nb, Fe and W, respectively. The measurements demonstrate the outstanding performance of the STM with high spatial and energy resolution as well as the spin-resolved capability.
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Submitted 16 May, 2018;
originally announced May 2018.
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Stress modulated optical spin-injection in bulk semiconductors
Authors:
Jose Luis Cabellos,
Cuauhtemoc Salazar,
Bernardo S. Mendoza
Abstract:
A full band-structure ab initio calculation of the degree of spin polarization (DSP) in stressed bulk Si and bulk GaAs is reported. For Si, we found that compressive stress causes the DSP signal peak to decrease slightly in magnitude and to shift to higher energies.
A full band-structure ab initio calculation of the degree of spin polarization (DSP) in stressed bulk Si and bulk GaAs is reported. For Si, we found that compressive stress causes the DSP signal peak to decrease slightly in magnitude and to shift to higher energies.
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Submitted 3 April, 2018;
originally announced April 2018.
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Coherent control of current injection in zigzag graphene nanoribbons
Authors:
Cuauhtémoc Salazar,
J. L. Cheng,
J. E. Sipe
Abstract:
We present Fermi's golden rule calculations of the optical carrier injection and the coherent control of current injection in graphene nanoribbons with zigzag geometry, using an envelope function approach. This system possesses strongly localized states (flat bands) with a large joint density of states at low photon energies; for ribbons with widths above a few tens of nanometers, this system also…
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We present Fermi's golden rule calculations of the optical carrier injection and the coherent control of current injection in graphene nanoribbons with zigzag geometry, using an envelope function approach. This system possesses strongly localized states (flat bands) with a large joint density of states at low photon energies; for ribbons with widths above a few tens of nanometers, this system also posses large number of (non-flat) states with maxima and minima close to the Fermi level. Consequently, even with small dopings the occupation of these localized states can be significantly altered. In this work, we calculate the relevant quantities for coherent control at different chemical potentials, showing the sensitivity of this system to the occupation of the edge states. We consider coherent control scenarios arising from the interference of one-photon absorption at $2\hbarω$ with two-photon absorption at $\hbarω$, and those arising from the interference of one-photon absorption at $\hbarω$ with stimulated electronic Raman scattering (virtual absorption at $2\hbarω$ followed by emission at $\hbarω$). Although at large photon energies these processes follow an energy-dependence similar to that of 2D graphene, the zigzag nanoribbons exhibit a richer structure at low photon energies, arising from divergences of the joint density of states and from resonant absorption processes, which can be strongly modified by doping. As a figure of merit for the injected carrier currents, we calculate the resulting swarm velocities. Finally, we provide estimates for the limits of validity of our model.
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Submitted 27 September, 2017; v1 submitted 7 June, 2017;
originally announced June 2017.
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An effective model for the electronic and optical properties of stanene
Authors:
Cuauhtémoc Salazar,
Rodrigo A. Muniz,
J. E. Sipe
Abstract:
The existence of several 2D materials with heavy atoms in their composition has been recently demonstrated. The electronic and optical properties of these materials can be accurately computed with numerically intensive density functional theory methods. However, it is desirable to have simple effective models that can accurately describe these properties at low energies. Here we present an effecti…
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The existence of several 2D materials with heavy atoms in their composition has been recently demonstrated. The electronic and optical properties of these materials can be accurately computed with numerically intensive density functional theory methods. However, it is desirable to have simple effective models that can accurately describe these properties at low energies. Here we present an effective model for stanene that is reliable for electronic and optical properties for photon energies up to 1.1 eV. For this material, we find that a quadratic model with respect to the lattice momentum is the best suited for calculations based on the bandstructure, even with respect to band warping. We also find that splitting the two spin-z subsectors is a good approximation, which indicates that the lattice buckling can be neglected in calculations based on the bandstructure. We illustrate the applicability of the model by computing the linear optical injection rates of carrier and spin densities in stanene. Our calculations indicate that an incident circularly polarized optical field only excites electrons with spin that matches its helicity.
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Submitted 27 September, 2017; v1 submitted 4 June, 2017;
originally announced June 2017.
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Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
Authors:
P. Stoliar,
P. Levy,
M. J. Sánchez,
A. G. Leyva,
C. A. Albornoz,
F. Gomez-Marlasca,
A. Zanini,
C. Toro Salazar,
N. Ghenzi,
M. J. Rozenberg
Abstract:
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS devi…
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We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.
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Submitted 14 October, 2013;
originally announced October 2013.
