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Multipole polaron in the devil's staircase of CeSb
Authors:
Y. Arai,
Kenta Kuroda,
T. Nomoto,
Z. H. Tin,
S. Sakuragi,
C. Bareille,
S. Akebi,
K. Kurokawa,
Y. Kinoshita,
W. -L. Zhang,
S. Shin,
M. Tokunaga,
H. Kitazawa,
Y. Haga,
H. S. Suzuki,
S. Miyasaka,
S. Tajima,
K. Iwasa,
R. Arita,
Takeshi Kondo
Abstract:
Rare-earth intermetallic compounds exhibit rich phenomena induced by the interplay between localized $f$ orbitals and conduction electrons. However, since the energy scale of the crystal-electric-field splitting is only a few millielectronvolts, the nature of the mobile electrons accompanied by collective crystal-electric-field excitations has not been unveiled. Here, we examine the low-energy ele…
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Rare-earth intermetallic compounds exhibit rich phenomena induced by the interplay between localized $f$ orbitals and conduction electrons. However, since the energy scale of the crystal-electric-field splitting is only a few millielectronvolts, the nature of the mobile electrons accompanied by collective crystal-electric-field excitations has not been unveiled. Here, we examine the low-energy electronic structures of CeSb through the anomalous magnetostructural transitions below the N$é$el temperature, $\sim$17 K, termed the 'devil's staircase', using laser angle-resolved photoemission, Raman and neutron scattering spectroscopies. We report another type of electron-boson coupling between mobile electrons and quadrupole crystal-electric-field excitations of the 4$f$ orbitals, which renormalizes the Sb 5$p$ band prominently, yielding a kink at a very low energy ($\sim$7 meV). This coupling strength is strong and exhibits anomalous step-like enhancement during the devil's staircase transition, unveiling a new type of quasiparticle, named the 'multipole polaron', comprising a mobile electron dressed with a cloud of the quadrupole crystal-electric-field polarization.
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Submitted 23 February, 2022; v1 submitted 25 May, 2021;
originally announced May 2021.
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Appearance of ferromagnetism in Pt(100) ultrathin films originated from quantum-well states
Authors:
Tatsuru Yamada,
Keisuke Ochiai,
Hirofumi Kinoshita,
Shunsuke Sakuragi,
Motohiro Suzuki,
Hitoshi Osawa,
Hiroyuki Kageshima,
Tetsuya Sato
Abstract:
Ferromagnetism was observed in a Pt(100) ultrathin film deposited on a SrTiO3(100) substrate. The ferromagnetism, which appears in films with thicknesses of 2.2-4.4 nm, periodically changes with a period of approximately 1 nm (5-6 monolayers) depending on the film thickness. This is consistent with the period derived from the quantum-well states formed in the thin film. X-ray magnetic circular dic…
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Ferromagnetism was observed in a Pt(100) ultrathin film deposited on a SrTiO3(100) substrate. The ferromagnetism, which appears in films with thicknesses of 2.2-4.4 nm, periodically changes with a period of approximately 1 nm (5-6 monolayers) depending on the film thickness. This is consistent with the period derived from the quantum-well states formed in the thin film. X-ray magnetic circular dichroism measurements show the evidence of appearance of intrinsic ferromagnetism in Pt(100) ultra-thin film. In addition, present results suggest a possibility that the orbital magnetic moment of pure Pt is much smaller than that of the Pt/ferromagnetic multilayer system. These results will provide a potential new mechanism for origin of the large magnetic anisotropy in Pt components.
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Submitted 10 November, 2022; v1 submitted 7 January, 2021;
originally announced January 2021.
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Observation of small Fermi pockets protected by clean CuO2 sheets of a high-Tc superconductor
Authors:
So Kunisada,
Shunsuke Isono,
Yoshimitsu Kohama,
Shiro Sakai,
Cedric Bareille,
Shunsuke Sakuragi,
Ryo Noguchi,
Kifu Kurokawa,
Kenta Kuroda,
Yukiaki Ishida,
Shintaro Adachi,
Ryotaro Sekine,
Timur K. Kim,
Cephise Cacho,
Shik Shin,
Takami Tohyama,
Kazuyasu Tokiwa,
Takeshi Kondo
Abstract:
The superconductivity of high transition temperature (Tc) occurs in copper oxides with carrier-doping to an antiferromagnetic (AF) Mott insulator. This discovery more than thirty years ago immediately led to a prediction about the formation of a small Fermi pocket. This structure, however, has not yet been detected, while it could be a key element in relating high-Tc superconductivity to Mott phys…
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The superconductivity of high transition temperature (Tc) occurs in copper oxides with carrier-doping to an antiferromagnetic (AF) Mott insulator. This discovery more than thirty years ago immediately led to a prediction about the formation of a small Fermi pocket. This structure, however, has not yet been detected, while it could be a key element in relating high-Tc superconductivity to Mott physics. To address this long-standing issue, we investigate the electronic structure of a five-layered Ba2Ca4Cu5O10(F,O)2 with inner CuO2 planes demonstrated to be cleanest ever in cuprates. Most surprisingly, we find small Fermi surface (FS) pockets closed around (pi/2,pi/2) consistently by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. The d-wave superconducting gap opens along the pocket, revealing the coexistence between the superconductivity and AF order in the same CuO2 sheet. Our data further indicate that the superconductivity can occur without contribution from the states near the antinodal region, which are shared by other competing excitations such as the charge density wave (CDW) and pseudogap states. This will have significant implications for understanding the superconductivity and puzzling Fermi arc phenomena in cuprates.
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Submitted 18 August, 2020;
originally announced August 2020.
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Structural phase diagram of LaO1-xFxBiSSe: suppression of the structural phase transition by partial F substitutions
Authors:
Kazuhisa Hoshi,
Shunsuke Sakuragi,
Takeshi Yajima,
Yosuke Goto,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
We have investigated low-temperature crystal structure of BiCh2-based compounds LaO1-xFxBiSSe (x = 0, 0.01, 0.02, 0.03, and 0.5), in which anomalous two-fold-symmetric in-plane anisotropy of superconducting states has been observed for x = 0.5. From synchrotron X-ray diffraction experiments, a structural transition from tetragonal to monoclinic was observed for x = 0 and 0.01 at 340 and 240 K, res…
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We have investigated low-temperature crystal structure of BiCh2-based compounds LaO1-xFxBiSSe (x = 0, 0.01, 0.02, 0.03, and 0.5), in which anomalous two-fold-symmetric in-plane anisotropy of superconducting states has been observed for x = 0.5. From synchrotron X-ray diffraction experiments, a structural transition from tetragonal to monoclinic was observed for x = 0 and 0.01 at 340 and 240 K, respectively. For x = 0.03, a structural transition and broadening of the diffraction peak were not observed down to 100 K. These facts suggest that the structural transition could be suppressed by 3% F substitution in LaO1-xFxBiSSe. Furthermore, the crystal structure for x = 0.5 at 4 K was examined by low-temperature (laboratory) X-ray diffraction, which confirmed that the tetragonal structure is maintained at 4 K for x = 0.5. Our results suggest that the two-fold-symmetric in-plane anisotropy of superconducting states observed for LaO0.5F0.5BiSSe was not originated from structural symmetry lowering.
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Submitted 7 July, 2020; v1 submitted 14 June, 2020;
originally announced June 2020.
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Devil's staircase transition of the electronic structures in CeSb
Authors:
Kenta Kuroda,
Y. Arai,
N. Rezaei,
S. Kunisada,
S. Sakuragi,
M. Alaei,
Y. Kinoshita,
C. Bareille,
R. Noguchi,
M. Nakayama,
S. Akebi,
M. Sakano,
K. Kawaguchi,
M. Arita,
S. Ideta,
K. Tanaka,
H. Kitazawa,
K. Okazaki,
M. Tokunaga,
Y. Haga,
S. Shin,
H. S. Suzuki,
R. Arita,
Takeshi Kondo
Abstract:
Solids with competing interactions often undergo complex phase transitions with a variety of long-periodic modulations. Among such transition, devil's staircase is the most complex phenomenon, and for it, CeSb is the most famous material, where a number of the distinct phases with long-periodic magnetostructures sequentially appear below the Neel temperature. An evolution of the low-energy electro…
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Solids with competing interactions often undergo complex phase transitions with a variety of long-periodic modulations. Among such transition, devil's staircase is the most complex phenomenon, and for it, CeSb is the most famous material, where a number of the distinct phases with long-periodic magnetostructures sequentially appear below the Neel temperature. An evolution of the low-energy electronic structure going through the devil's staircase is of special interest, which has, however, been elusive so far despite the 40-years of intense researches. Here we use bulk-sensitive angle-resolved photoemission spectroscopy and reveal the devil's staircase transition of the electronic structures. The magnetic reconstruction dramatically alters the band dispersions at each transition. We moreover find that the well-defined band picture largely collapses around the Fermi energy under the long-periodic modulation of the transitional phase, while it recovers at the transition into the lowest-temperature ground state. Our data provide the first direct evidence for a significant reorganization of the electronic structures and spectral functions occurring during the devil's staircase.
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Submitted 8 June, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Zhanzhi Jiang,
Kenta Kuroda,
Takanari Takahashi,
Zifan Xu,
Daehun Lee,
Motoaki Hirayama,
Masayuki Ochi,
Tetsuroh Shirasawa,
Peng Zhang,
Chun Lin,
Cédric Bareille,
Shunsuke Sakuragi,
Hiroaki Tanaka,
So Kunisada,
Kifu Kurokawa,
Koichiro Yaji,
Ayumi Harasawa,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Timur K. Kim,
Cephise Cacho,
Makoto Hashimoto
, et al. (6 additional authors not shown)
Abstract:
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingl…
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The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
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Submitted 10 February, 2021; v1 submitted 4 February, 2020;
originally announced February 2020.
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Three-dimensional electronic structure in ferromagnetic $\textrm{Fe}_3\textrm{Sn}_2$ with breathing kagome bilayers
Authors:
Hiroaki Tanaka,
Yuita Fujisawa,
Kenta Kuroda,
Ryo Noguchi,
Shunsuke Sakuragi,
Cédric Bareille,
Barnaby Smith,
Cephise Cacho,
Sung Won Jung,
Takayuki Muro,
Yoshinori Okada,
Takeshi Kondo
Abstract:
A large anomalous Hall effect (AHE) has been observed in ferromagnetic $\textrm{Fe}_3\textrm{Sn}_2$ with breathing kagome bilayers. To understand the underlying mechanism for this, we investigate the electronic structure of $\textrm{Fe}_3\textrm{Sn}_2$ by angle-resolved photoemission spectroscopy (ARPES). In particular, we use both vacuum ultraviolet light (VUV) and soft x ray (SX), which allow su…
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A large anomalous Hall effect (AHE) has been observed in ferromagnetic $\textrm{Fe}_3\textrm{Sn}_2$ with breathing kagome bilayers. To understand the underlying mechanism for this, we investigate the electronic structure of $\textrm{Fe}_3\textrm{Sn}_2$ by angle-resolved photoemission spectroscopy (ARPES). In particular, we use both vacuum ultraviolet light (VUV) and soft x ray (SX), which allow surface-sensitive and relatively bulk-sensitive measurements, respectively, and distinguish bulk states from surface states, which should be unlikely related to the AHE. While VUV-ARPES observes two-dimensional bands mostly due to surface states, SX-ARPES reveals three-dimensional band dispersions with a periodicity of the rhombohedral unit cell in the bulk. Our data show a good consistency with a theoretical calculation based on density functional theory, suggesting a possibility that $\textrm{Fe}_3\textrm{Sn}_2$ is a magnetic Weyl semimetal.
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Submitted 5 October, 2020; v1 submitted 24 January, 2020;
originally announced January 2020.
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Bulk quantum Hall effect of spin-valley-coupled Dirac fermions in a polar antiferromagnet BaMnSb$_2$
Authors:
H. Sakai,
H. Fujimura,
S. Sakuragi,
M. Ochi,
R. Kurihara,
A. Miyake,
M. Tokunaga,
T. Kojima,
D. Hashizume,
T. Muro,
K. Kuroda,
T. Kondo,
T. Kida,
M. Hagiwara,
K. Kuroki,
M. Kondo,
K. Tsuruda,
H. Murakawa,
N. Hanasaki
Abstract:
Unconventional features of relativistic Dirac/Weyl quasi-particles in topological materials are most evidently manifested in the 2D quantum Hall effect (QHE), whose variety is further enriched by their spin and/or valley polarization. Although its extension to three dimensions has been long-sought and inspired theoretical proposals, material candidates have been lacking. Here we have discovered va…
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Unconventional features of relativistic Dirac/Weyl quasi-particles in topological materials are most evidently manifested in the 2D quantum Hall effect (QHE), whose variety is further enriched by their spin and/or valley polarization. Although its extension to three dimensions has been long-sought and inspired theoretical proposals, material candidates have been lacking. Here we have discovered valley-contrasting spin-polarized Dirac fermions in a multilayer form in bulk antiferromagnet BaMnSb$_2$, where the out-of-plane Zeeman-type spin splitting is induced by the in-plane inversion symmetry breaking and spin-orbit coupling (SOC) in the distorted Sb square net. Furthermore, we have observed well-defined quantized Hall plateaus together with vanishing interlayer conductivity at low temperatures as a hallmark of the half-integer QHE in a bulk form. The Hall conductance of each layer is found to be nearly quantized to $2(N+1/2)e^2/h$ with $N$ being the Landau index, which is consistent with two spin-polarized Dirac valleys protected by the strong spin-valley coupling.
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Submitted 23 January, 2020;
originally announced January 2020.
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Spintronic superconductor in a bulk layered material with natural spin-valve structure
Authors:
Shunsuke Sakuragi,
S. Sasaki,
R. Akashi,
R. Sakagami,
K. Kuroda,
C. Bareille,
T. Hashimoto,
T. Nagashima,
Y. Kinoshita,
Y. Hirata,
M. Shimozawa,
S. Asai,
T. Yajima,
S. Doi,
N. Tsujimoto,
S. Kunisada,
R. Noguchi,
K. Kurokawa,
N. Azuma,
K. Hirata,
Y. Yamasaki,
H. Nakao,
T. K. Kim,
C. Cacho,
T. Masuda
, et al. (7 additional authors not shown)
Abstract:
Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties…
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Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties in the materials with antiferromagnetic (AFM) layers, so-called natural spin-valve structure, has been reported for the Dirac Fermion and topological/axion materials. However, a bulk crystal in which magnetic and superconducting layers are alternately stacked has not been realized until now, and the search for functional properties in it is an interesting yet unexplored field in material science. Here, we discover superconductivity providing such an ideal platform in EuSn2As2 with the van der Waals stacking of magnetic Eu layers and superconducting Sn-As layers, and present the first demonstration of a natural spin-valve effect on the superconducting current. Below the superconducting transition temperature (Tc), the electrical resistivity becomes zero in the in-plane direction. In contrast, it, surprisingly, remains finite down to the lowest temperature in the out-of-plane direction, mostly due to the structure of intrinsic magnetic Josephson junctions in EuSn2As2. The magnetic order of the Eu layers (or natural spin-valve) is observed to be extremely soft, allowing one to easy control of the out-of-plane to in-plane resistivities ratio from 1 to infinity by weak external magnetic fields. The concept of multi-functional materials with stacked magnetic-superconducting layers will open a new pathway to develop novel spintronic devices with magnetically controllable superconductivity.
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Submitted 22 January, 2020;
originally announced January 2020.
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Switching of magnetism via modifying phase shift of quantum-well states by tailoring the interface electronic structure
Authors:
Shunsuke Sakuragi,
Hiroyuki Kageshima,
Tetsuya Sato
Abstract:
We demonstrate control of the magnetism of Pd(100) ultrathin films, which show d-electron quantum-well induced ferromagnetism, via modulation of the interface electronic state using density functional calculation. From an analysis based on the phase model, forming the Au/Pd(100) interface induces hybridization of the wave function of d-electron quantum-well states, and modulates the term of the sc…
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We demonstrate control of the magnetism of Pd(100) ultrathin films, which show d-electron quantum-well induced ferromagnetism, via modulation of the interface electronic state using density functional calculation. From an analysis based on the phase model, forming the Au/Pd(100) interface induces hybridization of the wave function of d-electron quantum-well states, and modulates the term of the scattering phase shift as a function of the reciprocal lattice point. In contrast, forming the Al interface, which has only s-electrons at the Fermi energy, cannot modify the scattering phase shift. Our finding indicates the possibility of modifying the phase shift by tailoring the interface electronic states using hybridization of the wave function, and this efficiently changes the density of states near the Fermi energy of Pd films, and the switching between paramagnetism and ferromagnetism occurs based on the condition for ferromagnetism (Stoner criterion).
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Submitted 27 November, 2019; v1 submitted 27 March, 2019;
originally announced March 2019.
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Manipulation of magnetization in Pd(100) ultrathin films with quantum well structure using modification of Schottky barrier potentials
Authors:
Hidetake Tanabe,
Shunsuke Sakuragi,
Tetsuya Sato
Abstract:
The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO$_{3-x}$/Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface…
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The magnetization of Pd(100) ultrathin films that show ferromagnetism due to quantum well states was manipulated by changing the quantum well state with an applied bias voltage. The voltage dependence of the magnetic moment of Pd/SrTiO$_{3-x}$/Ti/Au intrinsically depends on the Pd film thickness. The induced change in the magnetic moment is due to the modulation of the phase shift at the interface between the Pd thin film and the semiconductor SrTiO$_{3-x}$ substrate.
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Submitted 27 January, 2019;
originally announced January 2019.
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Spontaneous Distortion and Ferromagnetism Induced by Quantum-well States in Pd(100) Ultrathin Films
Authors:
Shunsuke Sakuragi,
Hiroo Tajiri,
Hiroyuki Kageshima,
Tetsuya Sato
Abstract:
We study the crystal structure of Pd(100) ultrathin films, which show ferromagnetism induced by the quantum confinement effect, using in-situ X-ray crystal truncation rod measurement and density functional calculation. The energy gain due to the appearance of ferromagnetism in Pd results in flatter and uniform film growth of ferromagnetic Pd films compared with paramagnetic Pd. In addition, ferrom…
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We study the crystal structure of Pd(100) ultrathin films, which show ferromagnetism induced by the quantum confinement effect, using in-situ X-ray crystal truncation rod measurement and density functional calculation. The energy gain due to the appearance of ferromagnetism in Pd results in flatter and uniform film growth of ferromagnetic Pd films compared with paramagnetic Pd. In addition, ferromagnetic Pd films expand the lattice constant in order to suppress the increase in kinetic energy of electrons accompanied by the occurrence of exchange splitting. Although the traditional theory of magnetism in metals indicates that the increase in density of states that induces ferromagnetism (Stoner criterion), our present finding reveals a mechanism of modulation in the density of states via the appearance of ferromagnetism, i.e., the inverse mechanism of Stoner's theory.
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Submitted 19 December, 2016;
originally announced December 2016.
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Effect of the change in the interface structure of Pd(100)/SrTiO3 for quantum-well induced ferromagnetism
Authors:
Shunsuke Sakuragi,
Tomoyuki Ogawa,
Tetsuya Sato
Abstract:
Pd(100) ultrathin films show ferromagnetism induced by the confinement of electrons in the film, i.e., the quantum-well mechanism. In this study, we investigate the effect of the change in the interface structure between a Pd film and SrTiO3 substrate on quantum-well induced ferromagnetism using the structural phase transition of SrTiO3. During repeated measurement of temperature- dependent magnet…
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Pd(100) ultrathin films show ferromagnetism induced by the confinement of electrons in the film, i.e., the quantum-well mechanism. In this study, we investigate the effect of the change in the interface structure between a Pd film and SrTiO3 substrate on quantum-well induced ferromagnetism using the structural phase transition of SrTiO3. During repeated measurement of temperature- dependent magnetization of the Pd/SrTiO3 system, cracks were induced in the Pd overlayer near the interface region by the structural phase transition of SrTiO3, thereby changing the film-thickness dependence of the magnetic moment. This is explained by the concept that as the magnetic moment in Pd(100) changed, so too did the thickness of the quantum-well. In addition, we observed that the ferromagnetism in the Pd(100) disappeared with the accumulation of cracks due to the repetition of the temperature cycle through the phase-transition temperature. This suggests that lowering the crystallinity of the interface structure by producing a large number of cracks has a negative effect on quantum-well induced ferromagnetism.
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Submitted 2 February, 2016;
originally announced February 2016.
