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Electronic Structure of Kramers Nodal-Line Semimetal YAuGe and Anomalous Hall Effect Induced by Magnetic Rare-Earth Substitution
Authors:
Takashi Kurumaji,
Jorge I. Facio,
Natsuki Mitsuishi,
Shusaku Imajo,
Masaki Gen,
Motoi Kimata,
Linda Ye,
David Graf,
Masato Sakano,
Miho Kitamura,
Kohei Yamagami,
Kyoko Ishizaka,
Koichi Kindo,
Taka-hisa Arima
Abstract:
Nodal-line semimetals are a class of topological materials hosting one dimensional lines of band degeneracy. Kramers nodal-line (KNL) metals/semimetals have recently been theoretically recognized as a class of topological states inherent to all non-centrosymmetric achiral crystal lattices. We investigate the electronic structure of candidate KNL semimetal YAuGe by angle-resolved photoemission spec…
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Nodal-line semimetals are a class of topological materials hosting one dimensional lines of band degeneracy. Kramers nodal-line (KNL) metals/semimetals have recently been theoretically recognized as a class of topological states inherent to all non-centrosymmetric achiral crystal lattices. We investigate the electronic structure of candidate KNL semimetal YAuGe by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillations as well as by density functional theory (DFT) calculations. DFT has revealed that YAuGe hosts KNLs on the G-A-L-M plane of the Brillouin zone, that are protected by the time reversal and mirror-inversion symmetries. Through ARPES and quantum oscillations we identify signatures of hole bands enclosing the G point, and the observed splitting of quantum oscillation frequency with angle is attributed to spin-orbit-coupling-induced band splitting away from the KNLs. Furthermore, we show that the degeneracy of the nodal lines along the G-A line is lifted by the time-reversal-symmetry breaking when the Y is substituted by magnetic R ions (R = rare earth). This becomes a source of Berry curvature and contributes to the anomalous Hall effect in magnetic RAuGe. These findings establish RAuGe as a new class of KNL semimetals offering significant potential for engineering of anomalous magnetotransport properties via magnetic rare-earth substitution.
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Submitted 9 May, 2025; v1 submitted 15 January, 2025;
originally announced January 2025.
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180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor
Authors:
S. Akatsuka,
M. Sakano,
T. Yamamoto,
T. Nomoto,
R. Arita,
R. Murata,
T. Sasagawa,
K. Watanabe,
T. Taniguchi,
M. Kitamura,
K. Horiba,
K. Sugawara,
S. Souma,
T. Sato,
H. Kumigashira,
K. Shinokita,
H. Wang,
K. Matsuda,
S. Masubuchi,
T. Machida,
K. Ishizaka
Abstract:
We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the fi…
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We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers.
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Submitted 27 September, 2023;
originally announced September 2023.
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Unveiling the orbital-selective electronic band reconstruction through the structural phase transition in TaTe$_2$
Authors:
Natsuki Mitsuishi,
Yusuke Sugita,
Tomoki Akiba,
Yuki Takahashi,
Masato Sakano,
Koji Horiba,
Hiroshi Kumigashira,
Hidefumi Takahashi,
Shintaro Ishiwata,
Yukitoshi Motome,
Kyoko Ishizaka
Abstract:
Tantalum ditelluride TaTe$_2$ belongs to the family of layered transition metal dichalcogenides but exhibits a unique structural phase transition at around 170 K that accompanies the rearrangement of the Ta atomic network from a "ribbon chain" to a "butterfly-like" pattern. While multiple mechanisms including Fermi surface nesting and chemical bonding instabilities have been intensively discussed,…
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Tantalum ditelluride TaTe$_2$ belongs to the family of layered transition metal dichalcogenides but exhibits a unique structural phase transition at around 170 K that accompanies the rearrangement of the Ta atomic network from a "ribbon chain" to a "butterfly-like" pattern. While multiple mechanisms including Fermi surface nesting and chemical bonding instabilities have been intensively discussed, the origin of this transition remains elusive. Here we investigate the electronic structure of single-crystalline TaTe$_2$ with a particular focus on its modifications through the phase transition, by employing core-level and angle-resolved photoemission spectroscopy combined with first-principles calculations. Temperature-dependent core-level spectroscopy demonstrates a splitting of the Ta $4f$ core-level spectra through the phase transition indicative of the Ta-dominated electronic state reconstruction. Low-energy electronic state measurements further reveal an unusual kink-like band reconstruction occurring at the Brillouin zone boundary, which cannot be explained by Fermi surface nesting or band folding effects. On the basis of the orbital-projected band calculations, this band reconstruction is mainly attributed to the modifications of specific Ta $5d$ states, namely the $d_{XY}$ orbitals (the ones elongating along the ribbon chains) at the center Ta sites of the ribbon chains. The present results highlight the strong orbital-dependent electronic state reconstruction through the phase transition in this system and provide fundamental insights towards understanding complex electron-lattice-bond coupled phenomena.
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Submitted 10 February, 2024; v1 submitted 27 June, 2023;
originally announced June 2023.
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Ultrafast Control of Crystal Structure in a Topological Charge-Density-Wave Material
Authors:
Takeshi Suzuki,
Yuya Kubota,
Natsuki Mitsuishi,
Shunsuke Akatsuka,
Jumpei Koga,
Masato Sakano,
Satoru Masubuchi,
Yoshikazu Tanaka,
Tadashi Togashi,
Hiroyuki Ohsumi,
Kenji Tamasaku,
Makina Yabashi,
Hidefumi Takahashi,
Shintaro Ishiwata,
Tomoki Machida,
Iwao Matsuda,
Kyoko Ishizaka,
Kozo Okazaki
Abstract:
Optical control of crystal structures is a promising route to change physical properties including topological nature of a targeting material. Time-resolved X-ray diffraction measurements using the X-ray free-electron laser are performed to study the ultrafast lattice dynamics of VTe$_2$, which shows a unique charge-density-wave (CDW) ordering coupled to the topological surface states as a first-o…
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Optical control of crystal structures is a promising route to change physical properties including topological nature of a targeting material. Time-resolved X-ray diffraction measurements using the X-ray free-electron laser are performed to study the ultrafast lattice dynamics of VTe$_2$, which shows a unique charge-density-wave (CDW) ordering coupled to the topological surface states as a first-order phase transition. A significant oscillation of the CDW amplitude mode is observed at a superlattice reflection as well as Bragg reflections. The frequency of the oscillation is independent of the fluence of the pumping laser, which is prominent to the CDW ordering of the first-order phase transition. Furthermore, the timescale of the photoinduced 1$T^{\prime\prime}$ to 1$T$ phase transition is independent of the period of the CDW amplitude mode.
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Submitted 26 May, 2023;
originally announced May 2023.
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High Pressure and Temperature Neural Network Reactive Force Field for Energetic Materials
Authors:
Brenden W. Hamilton,
Pilsun Yoo,
Michael N. Sakano,
Md Mahbubul Islam,
Alejandro Strachan
Abstract:
Reactive force fields for molecular dynamics have enabled a wide range of studies in numerous material classes. These force fields are computationally inexpensive as compared to electronic structure calculations and allow for simulations of millions of atoms. However, the accuracy of traditional force fields is limited by their functional forms, preventing continual refinement and improvement. The…
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Reactive force fields for molecular dynamics have enabled a wide range of studies in numerous material classes. These force fields are computationally inexpensive as compared to electronic structure calculations and allow for simulations of millions of atoms. However, the accuracy of traditional force fields is limited by their functional forms, preventing continual refinement and improvement. Therefore, we develop a neural network based reactive interatomic potential for the prediction of the mechanical, thermal, and chemical response of energetic materials at extreme conditions for energetic materials. The training set is expanded in an automatic iterative approach and consists of various CHNO materials and their reactions under ambient and under shock loading conditions. This new potential shows improved accuracy over the current state of the art force fields for a wide range of properties such as detonation performance, decomposition product formation, and vibrational spectra under ambient and shock loading conditions.
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Submitted 9 February, 2023;
originally announced February 2023.
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Signature of topological band crossing in ferromagnetic Cr1/3NbSe2 epitaxial thin film
Authors:
Bruno Kenichi Saika,
Satoshi Hamao,
Yuki Majima,
Xiang Huang,
Hideki Matsuoka,
Satoshi Yoshida,
Miho Kitamura,
Masato Sakano,
Tatsuto Hatanaka,
Takuya Nomoto,
Motoaki Hirayama,
Koji Horiba,
Hiroshi Kumigashira,
Ryotaro Arita,
Yoshihiro Iwasa,
Masaki Nakano,
Kyoko Ishizaka
Abstract:
In intercalated transition metal dichalcogenides (I-TMDC), transition metal intercalation introduces magnetic phases which in some cases induce topological band crossing. However, evidence of the topological properties remains elusive in such materials. Here we employ angle-resolved photoemission spectroscopy to reveal the band structure of epitaxially grown ferromagnetic Cr1/3NbSe2. Experimental…
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In intercalated transition metal dichalcogenides (I-TMDC), transition metal intercalation introduces magnetic phases which in some cases induce topological band crossing. However, evidence of the topological properties remains elusive in such materials. Here we employ angle-resolved photoemission spectroscopy to reveal the band structure of epitaxially grown ferromagnetic Cr1/3NbSe2. Experimental evidence of the Weyl crossing shows Cr1/3NbSe2 to be a topological ferromagnet. This work highlights I-TMDC as platform towards the interplay of magnetic and topological physics in low-dimensional systems.
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Submitted 30 October, 2022;
originally announced October 2022.
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Direct observation of the layer-number-dependent electronic structure in few-layer WTe2
Authors:
M. Sakano,
Y. Tanaka,
S. Masubuchi,
S. Okazaki,
T. Nomoto,
A. Oshima,
K. Watanabe,
T. Taniguchi,
R. Arita,
T. Sasagawa,
T. Machida,
K. Ishizaka
Abstract:
When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhib…
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When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhibiting unique ferroelectricity and non-linear transport properties related to the antiphase stacking and Berry-curvature dipole. Here we investigate the electronic band dispersions of multilayer WTe2 (2-5 layers), by performing laser-based micro-focused angle-resolved photoelectron spectroscopy on exfoliated-flakes that are strictly sorted by n and encapsulated by graphene. We clearly observed the insulator-semimetal transition occurring between 2- and 3-layers, as well as the 30-70 meV spin-splitting of valence bands manifesting in even n as a signature of stronger structural asymmetry. Our result fully demonstrates the possibility of the large energy-scale band and spin manipulation through the finite n stacking procedure.
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Submitted 22 March, 2021;
originally announced March 2021.
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Competing spin modulations in a magnetically frustrated semimetal EuCuSb
Authors:
Hidefumi Takahashi,
Kai Aono,
Yusuke Nambu,
Ryoji Kiyanagi,
Takuya Nomoto,
Masato Sakano,
Kyoko Ishizaka,
Ryotaro Arita,
Shintaro Ishiwata
Abstract:
The competing magnetic ground states of the itinerant magnet EuCuSb, which has a hexagonal layered structure, were studied via magnetization, resistivity, and neutron diffraction measurements on single-crystal samples. EuCuSb has a three-dimensional semimetallic band structure as confirmed by band calculation and angle-resolved photoelectron spectroscopy, consistent with the nearly isotropic metal…
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The competing magnetic ground states of the itinerant magnet EuCuSb, which has a hexagonal layered structure, were studied via magnetization, resistivity, and neutron diffraction measurements on single-crystal samples. EuCuSb has a three-dimensional semimetallic band structure as confirmed by band calculation and angle-resolved photoelectron spectroscopy, consistent with the nearly isotropic metallic conductivity in the paramagnetic state. However, below the antiferromagnetic transition temperature of TN1 (8.5 K), the resistivity, especially along the hexagonal axis, increases significantly. This implies the emergence of anisotropic magnetic ordering coupled to the conducting electrons. Neutron diffraction measurements show that the Eu spins, which order ferromagnetically within each layer, are collinearly modulated (up-up-down-down) along the hexagonal axis below TN1, followed by the partial emergence of helical spin modulation below TN2 (6 K). Based on the observation of anomalous magnetoresistance with hysteretic behavior, we discuss the competing nature of the ground state inherent in a frustrated Heisenberg-like spin system with a centrosymmetric structure.
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Submitted 14 October, 2020;
originally announced October 2020.
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Devil's staircase transition of the electronic structures in CeSb
Authors:
Kenta Kuroda,
Y. Arai,
N. Rezaei,
S. Kunisada,
S. Sakuragi,
M. Alaei,
Y. Kinoshita,
C. Bareille,
R. Noguchi,
M. Nakayama,
S. Akebi,
M. Sakano,
K. Kawaguchi,
M. Arita,
S. Ideta,
K. Tanaka,
H. Kitazawa,
K. Okazaki,
M. Tokunaga,
Y. Haga,
S. Shin,
H. S. Suzuki,
R. Arita,
Takeshi Kondo
Abstract:
Solids with competing interactions often undergo complex phase transitions with a variety of long-periodic modulations. Among such transition, devil's staircase is the most complex phenomenon, and for it, CeSb is the most famous material, where a number of the distinct phases with long-periodic magnetostructures sequentially appear below the Neel temperature. An evolution of the low-energy electro…
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Solids with competing interactions often undergo complex phase transitions with a variety of long-periodic modulations. Among such transition, devil's staircase is the most complex phenomenon, and for it, CeSb is the most famous material, where a number of the distinct phases with long-periodic magnetostructures sequentially appear below the Neel temperature. An evolution of the low-energy electronic structure going through the devil's staircase is of special interest, which has, however, been elusive so far despite the 40-years of intense researches. Here we use bulk-sensitive angle-resolved photoemission spectroscopy and reveal the devil's staircase transition of the electronic structures. The magnetic reconstruction dramatically alters the band dispersions at each transition. We moreover find that the well-defined band picture largely collapses around the Fermi energy under the long-periodic modulation of the transitional phase, while it recovers at the transition into the lowest-temperature ground state. Our data provide the first direct evidence for a significant reorganization of the electronic structures and spectral functions occurring during the devil's staircase.
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Submitted 8 June, 2020; v1 submitted 11 May, 2020;
originally announced May 2020.
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Switching of band inversion and topological surface states by charge density wave
Authors:
N. Mitsuishi,
Y. Sugita,
M. S. Bahramy,
M. Kamitani,
T. Sonobe,
M. Sakano,
T. Shimojima,
H. Takahashi,
H. Sakai,
K. Horiba,
H. Kumigashira,
K. Taguchi,
K. Miyamoto,
T. Okuda,
S. Ishiwata,
Y. Motome,
K. Ishizaka
Abstract:
Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe$_2$, that hosts a charge density wave (C…
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Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe$_2$, that hosts a charge density wave (CDW) coupled with the band inversion involving V3$d$ and Te5$p$ orbitals. Spin- and angle-resolved photoemission spectroscopy with first-principles calculations reveal the huge anisotropic modification of the bulk electronic structure by the CDW formation, accompanying the selective disappearance of Dirac-type spin-polarized topological surface states that exist in the normal state. Thorough three dimensional investigation of bulk states indicates that the corresponding band inversion at the Brillouin zone boundary dissolves upon CDW formation, by transforming into anomalous flat bands. Our finding provides a new insight to the topological manipulation of matters by utilizing CDWs' flexible characters to external stimuli.
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Submitted 20 April, 2020;
originally announced April 2020.
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Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb
Authors:
Takahito Takeda,
Masahiro Suzuki,
Le Duc Anh,
Nguyen Thanh Tu,
Thorsten Schmitt,
Satoshi Yoshida,
Masato Sakano,
Kyoko Ishizaka,
Yukiharu Takeda,
Shin-ichi Fijimori,
Munetoshi Seki,
Hitoshi Tabata,
Atsushi Fujimori,
Vladimir N. Strocov,
Masaaki Tanaka,
Masaki Kobayashi
Abstract:
(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe…
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(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.
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Submitted 9 January, 2020;
originally announced January 2020.
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Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films
Authors:
Masaki Nakano,
Yue Wang,
Satoshi Yoshida,
Hideki Matsuoka,
Yuki Majima,
Keisuke Ikeda,
Yasuyuki Hirata,
Yukiharu Takeda,
Hiroki Wadati,
Yoshimitsu Kohama,
Yuta Ohigashi,
Masato Sakano,
Kyoko Ishizaka,
Yoshihiro Iwasa
Abstract:
The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals…
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The discoveries of intrinsic ferromagnetism in atomically-thin van der Waals crystals have opened up a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. To date, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating 'originally ferromagnetic (FM)' van der Waals crystals, while bottom-up approach by thin film growth technique has demonstrated emergent 2D ferromagnetism in a variety of 'originally non-FM' van der Waals materials. Here we demonstrate that V5Se8 epitaxial thin films grown by molecular-beam epitaxy (MBE) exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is 'originally antiferromagnetic (AFM)'. Moreover, thickness-dependence measurements reveal that this newly-developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.
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Submitted 4 October, 2019;
originally announced October 2019.
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Radial spin texture in elemental tellurium with chiral crystal structure
Authors:
M. Sakano,
M. Hirayama,
T. Takahashi,
S. Akebi,
M. Nakayama,
K. Kuroda,
K. Taguchi,
T. Yoshikawa,
K. Miyamoto,
T. Okuda,
K. Ono,
H. Kumigashira,
T. Ideue,
Y. Iwasa,
N. Mitsuishi,
K. Ishizaka,
S. Shin,
T. Miyake,
S. Murakami,
T. Sasagawa,
Takeshi Kondo
Abstract:
The chiral crystal is characterized by a lack of mirror symmetry and an inversion center, resulting in the inequivalent right- and left-handed structures. In the noncentrosymmetric crystal structure, the spin and momentum of electrons are locked in the reciprocal space with the help of the spin-orbit interaction. To reveal the spin textures of chiral crystals, here we investigate the spin and elec…
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The chiral crystal is characterized by a lack of mirror symmetry and an inversion center, resulting in the inequivalent right- and left-handed structures. In the noncentrosymmetric crystal structure, the spin and momentum of electrons are locked in the reciprocal space with the help of the spin-orbit interaction. To reveal the spin textures of chiral crystals, here we investigate the spin and electronic structure in p-type semiconductor elemental tellurium with a chiral crystal structure by using spin- and angle-resolved photoemission spectroscopy. Our data demonstrate that the highest valence band crossing the Fermi level has a spin component parallel to the electron momentum around the BZ corners. Significantly, we have also confirmed that the spin polarization is reversed in the crystal with the opposite chirality. The results indicate that the spin textures of the right- and left-handed chiral crystals are hedgehog-like, leading to unconventional magnetoelectric effects and nonreciprocal phenomena.
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Submitted 26 August, 2019;
originally announced August 2019.
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Evolution of electronic states and emergence of superconductivity in the polar semiconductor GeTe by doping valence-skipping In
Authors:
M. Kriener,
M. Sakano,
M. Kamitani,
M. S. Bahramy,
R. Yukawa,
K. Horiba,
H. Kumigashira,
K. Ishizaka,
Y. Tokura,
Y. Taguchi
Abstract:
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tu…
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GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tuned In doping. Our results moreover show the existence of a critical doping concentration around $x = 0.12$ in Ge$_{1-x}$In$_{x}$Te, where various properties take either an extremum or change their characters: The structure changes from polarly-rhombohedral to cubic, the resistivity sharply increases by orders of magnitude, the type of charge carriers changes from holes to electrons, and the density of states diminishes at the dawn of an emerging superconducting phase. By core-level photoemission spectroscopy we find indications of a change in the In-valence state from In$^{3+}$ to In$^{1+}$ with increasing $x$, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on superconductivity.
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Submitted 24 January, 2019;
originally announced January 2019.
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Discovery of switchable weak topological insulator state in quasi-one-dimensional bismuth iodide
Authors:
R. Noguchi,
T. Takahashi,
K. Kuroda,
M. Ochi,
T. Shirasawa,
M. Sakano,
C. Bareille,
M. Nakayama,
M. D. Watson,
K. Yaji,
A. Harasawa,
H. Iwasawa,
P. Dudin,
T. K. Kim,
M. Hoesch,
S. Shin,
R. Arita,
T. Sasagawa,
Takeshi Kondo
Abstract:
The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either "strong" or "weak", and experimental confirmations of the strong topological insulator (STI) rapidly followed the theoretical predictions. In contrast, the weak topological in…
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The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either "strong" or "weak", and experimental confirmations of the strong topological insulator (STI) rapidly followed the theoretical predictions. In contrast, the weak topological insulator has so far eluded experimental verification, since the topological surface states emerge only on particular side surfaces which are typically undetectable in real 3D crystals. Here we provide experimental evidence for the WTI state in a bismuth iodide, $β$-Bi4I4. Significantly, the crystal has naturally cleavable top and side planes both stacked via van-der-Waals forces, which have long been desirable for the experimental realization of the WTI state. As a definitive signature of it, we find quasi-1D Dirac TSS at the side-surface (100) while the top-surface (001) is topologically dark. Furthermore, a crystal transition from the $β$- to $α$-phase drives a topological phase transition from a nontrivial WTI to the trivial insulator around room temperature. This topological phase, viewed as quantum spin Hall (QSH) insulators stacked three-dimensionally, and excellent functionality with on/off switching will lay a foundation for new technology benefiting from highly directional spin-currents with large density protected against backscattering.
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Submitted 11 February, 2018;
originally announced February 2018.
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Direct Mapping of Spin and Orbital Entangled Wavefunction under Interband Spin-Orbit coupling of Rashba Spin-Split Surface States
Authors:
Ryo Noguchi,
Kenta Kuroda,
K. Yaji,
K. Kobayashi,
M. Sakano,
A. Harasawa,
Takeshi Kondo,
F. Komori,
S. Shin
Abstract:
We use spin- and angle-resolved photoemission spectroscopy (SARPES) combined with polarization-variable laser and investigate the spin-orbit coupling effect under interband hybridization of Rashba spin-split states for the surface alloys Bi/Ag(111) and Bi/Cu(111). In addition to the conventional band mapping of photoemission for Rashba spin-splitting, the different orbital and spin parts of the su…
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We use spin- and angle-resolved photoemission spectroscopy (SARPES) combined with polarization-variable laser and investigate the spin-orbit coupling effect under interband hybridization of Rashba spin-split states for the surface alloys Bi/Ag(111) and Bi/Cu(111). In addition to the conventional band mapping of photoemission for Rashba spin-splitting, the different orbital and spin parts of the surface wavefucntion are directly imaged into energy-momentum space. It is unambiguously revealed that the interband spin-orbit coupling modifies the spin and orbital character of the Rashba surface states leading to the enriched spin-orbital entanglement and the pronounced momentum dependence of the spin-polarization. The hybridization thus strongly deviates the spin and orbital characters from the standard Rashba model. The complex spin texture under interband spin-orbit hybridyzation proposed by first-principles calculation is experimentally unraveled by SARPES with a combination of p- and s-polarized light.
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Submitted 25 January, 2017;
originally announced January 2017.
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Observation of spin-polarized bands and domain-dependent Fermi arcs in polar Weyl semimetal MoTe$_2$
Authors:
M. Sakano,
M. S. Bahramy,
H. Tsuji,
I. Araya,
K. Ikeura,
H. Sakai,
S. Ishiwata,
K. Yaji,
K. Kuroda,
A. Harasawa,
S. Shin,
K. Ishizaka
Abstract:
We investigate the surface electronic structures of polar 1T'-MoTe2, the Weyl semimetal candidate realized through the nonpolar-polar structural phase transition, by utilizing the laser angle-resolved photoemission spectroscopy (ARPES) combined with first-principles calculations. Two kinds of domains with different surface band dispersions are observed from a single-crystalline sample. The spin-re…
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We investigate the surface electronic structures of polar 1T'-MoTe2, the Weyl semimetal candidate realized through the nonpolar-polar structural phase transition, by utilizing the laser angle-resolved photoemission spectroscopy (ARPES) combined with first-principles calculations. Two kinds of domains with different surface band dispersions are observed from a single-crystalline sample. The spin-resolved measurements further reveal that the spin polarizations of the surface and the bulk-derived states show the different domain-dependences, indicating the opposite bulk polarity. For both domains, some segment-like band features resembling the Fermi arcs are clearly observed. The patterns of the arcs present the marked contrast between the two domains, respectively agreeing well with the slab calculation of (0 0 1) and (0 0 -1) surfaces. The present result strongly suggests that the Fermi arc connects the identical pair of Weyl nodes on one side of the polar crystal surface, whereas it connects between the different pairs of Weyl nodes on the other side.
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Submitted 7 March, 2017; v1 submitted 7 November, 2016;
originally announced November 2016.
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Topologically protected surface states in a centrosymmetric superconductor beta-PdBi2
Authors:
M. Sakano,
K. Okawa,
M. Kanou,
H. Sanjo,
T. Okuda,
T. Sasagawa,
K. Ishizaka
Abstract:
The topological aspects of electrons in solids emerge in realistic matters as represented by topological insulators. They are expected to show a variety of new magneto-electric phenomena, and especially the ones hosting superconductivity are strongly desired as the candidate for topological superconductors (TSC). Possible TSC materials have been mostly developed by introducing carriers into topolo…
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The topological aspects of electrons in solids emerge in realistic matters as represented by topological insulators. They are expected to show a variety of new magneto-electric phenomena, and especially the ones hosting superconductivity are strongly desired as the candidate for topological superconductors (TSC). Possible TSC materials have been mostly developed by introducing carriers into topological insulators, nevertheless, those exhibiting indisputable superconductivity free from inhomogeneity are very few. Here we report on the observation of topologically-protected surface states in a centrosymmetric layered superconductor, beta-PdBi2, by utilizing spin- and angle-resolved photoemission spectroscopy. Besides the bulk bands, several surface bands, some of which crossing the Fermi level, are clearly observed with symmetrically allowed in-plane spin-polarizations. These surface states are precisely evaluated to be topological, based on the Z2 invariant analysis in analogy to 3-dimensional strong topological insulators. beta-PdBi2 may offer a TSC realized without any carrier-doping or applying pressure, i.e. a solid stage to investigate the topological aspect in the superconducting condensate.
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Submitted 27 May, 2015;
originally announced May 2015.
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Momentum-dependent sign-inversion of orbital polarization in superconducting FeSe
Authors:
Y. Suzuki,
T. Shimojima,
T. Sonobe,
A. Nakamura,
M. Sakano,
H. Tsuji,
J. Omachi,
K. Yoshioka,
M. Kuwata-Gonokami,
T. Watashige,
R. Kobayashi,
S. Kasahara,
T. Shibauchi,
Y. Matsuda,
Y. Yamakawa,
H. Kontani,
K. Ishizaka
Abstract:
We investigate the electronic reconstruction across the tetragonal-orthorhombic structural transition in FeSe by employing polarization-dependent angle-resolved photoemission spectroscopy (ARPES) on detwinned single crystals. Across the structural transition, the electronic structures around the G and M points are modified from four-fold to two-fold symmetry due to the lifting of degeneracy in dxz…
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We investigate the electronic reconstruction across the tetragonal-orthorhombic structural transition in FeSe by employing polarization-dependent angle-resolved photoemission spectroscopy (ARPES) on detwinned single crystals. Across the structural transition, the electronic structures around the G and M points are modified from four-fold to two-fold symmetry due to the lifting of degeneracy in dxz/dyz orbitals. The dxz band shifts upward at the G point while it moves downward at the M point, suggesting that the electronic structure of orthorhombic FeSe is characterized by a momentum-dependent sign-changing orbital polarization. The elongated directions of the elliptical Fermi surfaces (FSs) at the G and M points are rotated by 90 degrees with respect to each other, which may be related to the absence of the antiferromagnetic order in FeSe.
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Submitted 4 April, 2015;
originally announced April 2015.
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Lifting of xz/yz orbital degeneracy at the structural transition in detwinned FeSe
Authors:
T. Shimojima,
Y. Suzuki,
T. Sonobe,
A. Nakamura,
M. Sakano,
J. Omachi,
K. Yoshioka,
M. Kuwata-Gonokami,
K. Ono,
H. Kumigashira,
A. E. Böhmer,
F. Hardy,
T. Wolf,
C. Meingast,
H. v. Löhneysen,
H. Ikeda,
K. Ishizaka
Abstract:
We study superconducting FeSe (Tc = 9 K) exhibiting the tetragonal-orthorhombic structural transition (Ts = 90 K) without any antiferromagnetic ordering, by utilizing angle-resolved photoemission spectroscopy. In the detwinned orthorhombic state, the energy position of the dyz orbital band at the Brillouin zone corner is 50 meV higher than that of dxz, indicating the orbital order similar to NaFeA…
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We study superconducting FeSe (Tc = 9 K) exhibiting the tetragonal-orthorhombic structural transition (Ts = 90 K) without any antiferromagnetic ordering, by utilizing angle-resolved photoemission spectroscopy. In the detwinned orthorhombic state, the energy position of the dyz orbital band at the Brillouin zone corner is 50 meV higher than that of dxz, indicating the orbital order similar to NaFeAs and BaFe2As2 families. Evidence of orbital order also appears in the hole bands at the Brillouin zone center. Precisely measured temperature dependence using strain-free samples shows that the onset of the orbital ordering (To) occurs very close to Ts, thus suggesting that the electronic nematicity above Ts is considerably weaker in FeSe compared to BaFe2As2 family.
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Submitted 5 July, 2014;
originally announced July 2014.
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Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors
Authors:
M. Sakano,
M. S. Bahramy,
A. Katayama,
T. Shimojima,
H. Murakawa,
Y. Kaneko,
W. Malaeb,
S. Shin,
K. Ono,
H. Kumigashira,
R. Arita,
N. Nagaosa,
H. Y. Hwang,
Y. Tokura,
K. Ishizaka
Abstract:
We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin-sp…
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We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin-splitting. The characteristic 2D confinement effect is clearly observed also in the valence-bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX.
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Submitted 7 December, 2012;
originally announced December 2012.
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Three-dimensional bulk band dispersion in polar BiTeI with giant Rashba-type spin splitting
Authors:
M. Sakano,
J. Miyawaki,
A. Chainani,
Y. Takata,
T. Sonobe,
T. Shimojima,
M. Oura,
S. Shin,
M. S. Bahramy,
R. Arita,
N. Nagaosa,
H. Murakawa,
Y. Kaneko,
Y. Tokura,
K. Ishizaka
Abstract:
In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive $hν$-dependent soft x-ray angle resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well repr…
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In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of BiTeI using the bulk-sensitive $hν$-dependent soft x-ray angle resolved photoemission spectroscopy (SX-ARPES). The obtained band structure is shown to be well reproducible by the first-principles calculations, with huge spin splittings of ${\sim}300$ meV at the conduction-band-minimum and valence-band-maximum located in the $k_z=π/c$ plane. It provides the first direct experimental evidence of the 3D Rashba-type spin splitting in a bulk compound.
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Submitted 14 May, 2012;
originally announced May 2012.
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Orbital characters of three-dimensional Fermi surfaces in Eu2-xSrxNiO4 as probed by soft-x-ray angle-resolved photoemission spectroscopy
Authors:
M. Uchida,
K. Ishizaka,
P. Hansmann,
X. Yang,
M. Sakano,
J. Miyawaki,
R. Arita,
Y. Kaneko,
Y. Takata,
M. Oura,
A. Toschi,
K. Held,
A. Chainani,
O. K. Andersen,
S. Shin,
Y. Tokura
Abstract:
The three-dimensional Fermi surface structure of hole-doped metallic layered nickelate Eu2-xSrxNiO4 (x=1.1), an important counterpart to the isostructural superconducting cuprate La2-xSrxCuO4, is investigated by energy-dependent soft-x-ray angle-resolved photoemission spectroscopy. In addition to a large cylindrical hole Fermi surface analogous to the cuprates, we observe a Gamma-centered 3z2-r2-d…
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The three-dimensional Fermi surface structure of hole-doped metallic layered nickelate Eu2-xSrxNiO4 (x=1.1), an important counterpart to the isostructural superconducting cuprate La2-xSrxCuO4, is investigated by energy-dependent soft-x-ray angle-resolved photoemission spectroscopy. In addition to a large cylindrical hole Fermi surface analogous to the cuprates, we observe a Gamma-centered 3z2-r2-derived small electron pocket. This finding demonstrates that in the layered nickelate the 3z2-r2 band resides close to the x2-y2 one in energy. The resultant multi-band feature with varying orbital character as revealed may strongly work against the emergence of the high-temperature superconductivity.
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Submitted 10 December, 2011;
originally announced December 2011.
