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Terahertz displacive excitation of a coherent Raman-active phonon in V$_2$O$_3$
Authors:
Flavio Giorgianni,
Mattia Udina,
Tommaso Cea,
Eugenio Paris,
Marco Caputo,
Milan Radovic,
Larissa Boie,
Joe Sakai,
Christof W. Schneider,
Steven Lee Johnson
Abstract:
Nonlinear processes involving frequency-mixing of light fields set the basis for ultrafast coherent spectroscopy of collective modes in solids. In certain semimetals and semiconductors, generation of coherent phonon modes can occur by a displacive force on the lattice at the difference-frequency mixing of a laser pulse excitation on the electronic system. Here, as a low-frequency counterpart of th…
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Nonlinear processes involving frequency-mixing of light fields set the basis for ultrafast coherent spectroscopy of collective modes in solids. In certain semimetals and semiconductors, generation of coherent phonon modes can occur by a displacive force on the lattice at the difference-frequency mixing of a laser pulse excitation on the electronic system. Here, as a low-frequency counterpart of this process, we demonstrate that coherent phonon excitations can be induced by the sum-frequency components of an intense terahertz light field, coupled to intraband electronic transitions. This nonlinear process leads to charge-coupled coherent dynamics of Raman-active phonon modes in the strongly correlated metal V$_2$O$_3$. Our results show a new up-conversion pathway for the optical control of Raman-active modes in solids mediated by terahertz-driven electronic excitation.
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Submitted 7 March, 2022;
originally announced March 2022.
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Microstructural and dielectric properties of Ba0.6Sr0.4Ti1-xZrxO3 based combinatorial thin film capacitors library
Authors:
Guozhen Liu,
Jerome Wolfman,
Cécile Autret-Lambert,
Joe Sakai,
Sylvain Roger,
Monique Gervais,
François Gervais
Abstract:
Epitaxial growth of Ba0.6Sr0.4Ti1-xZrxO3 (0/leqx\leq0.3) composition spread thin film library on SrRuO3/SrTiO3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition…
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Epitaxial growth of Ba0.6Sr0.4Ti1-xZrxO3 (0/leqx\leq0.3) composition spread thin film library on SrRuO3/SrTiO3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations of the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties.
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Submitted 28 October, 2010; v1 submitted 21 October, 2010;
originally announced October 2010.
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Co distribution in ferromagnetic rutile Co-doped TiO$_2$ thin films grown by laser ablation on silicon substrates
Authors:
Nguyen Hoa Hong,
Joe Sakai,
W. Prellier,
Awatef Hassini
Abstract:
Pure rutile Co-doped TiO$_2$ films were fabricated successfully by the conventional pulsed laser deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could be almost the same as in the synthesized target, and films under various conditions all are ferromagnetic well above room temperature. Even though Rutherford b…
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Pure rutile Co-doped TiO$_2$ films were fabricated successfully by the conventional pulsed laser deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could be almost the same as in the synthesized target, and films under various conditions all are ferromagnetic well above room temperature. Even though Rutherford backscattering spectroscopy measurements show that Co atoms seem to be mostly localized near the surface of the films and less exist in deeper levels, other experimental evidences show that the ferromagnetism does not come from Co segregations but from the Co-doped TiO$_2$ matrix. Rutile Ti$_1-x$Co$_x$O$_2$ thin films grown by a very simple technique on low-price silicon substrates showing Curie temperature (TC) above 400 K appear to be very attractive to applications.
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Submitted 25 August, 2003;
originally announced August 2003.
