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QR$^2$-code: An open-source program for double resonance Raman spectra
Authors:
Jianqi Huang,
Renhui Liu,
Ye Zhang,
Nguyen Tuan Hung,
Huaihong Guo,
Riichiro Saito,
Teng Yang
Abstract:
We present an open-source program, QR$^2$-code, that computes double-resonance Raman (DRR) spectra using first-principles calculations. QR$^2$-code can calculate not only two-phonon DRR spectra but also single-resonance Raman spectra and defect-induced DRR spectra. For defect-induced DDR spectra, we simply assume that the electron-defect matrix element of elastic scattering is a constant. Hands-on…
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We present an open-source program, QR$^2$-code, that computes double-resonance Raman (DRR) spectra using first-principles calculations. QR$^2$-code can calculate not only two-phonon DRR spectra but also single-resonance Raman spectra and defect-induced DRR spectra. For defect-induced DDR spectra, we simply assume that the electron-defect matrix element of elastic scattering is a constant. Hands-on tutorials for graphene are given to show how to run QR$^2$-code for single-resonance, double-resonance, and defect-induced Raman spectra. We also compare the single-resonance Raman spectra by QR$^2$-code with that by QERaman code. In QR$^2$-code, the energy dispersions of electron and phonon are taken from Quantum ESPRESSO (QE) code, and the electron-phonon matrix element is obtained from the electron-phonon Wannier (EPW) code. All codes, examples, and scripts are available on the GitHub repository.
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Submitted 15 May, 2025;
originally announced May 2025.
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Downscaling of non van der Waals Semimetallic W5N6 with Resistivity Preservation
Authors:
Hongze Gao,
Da Zhou,
Lu Ping,
Zifan Wang,
Nguyen Tuan Hung,
Jun Cao,
Michael Geiwitz,
Gabriel Natale,
Yuxuan Cosmi Lin,
Kenneth Stephen Burch,
Riichiro Saito,
Mauricio Terrones,
Xi Ling
Abstract:
The bulk phase of transition metal nitrides (TMNs) has long been a subject of extensive investigation due to their utility as coating materials, electrocatalysts, and diffusion barriers, attributed to their high conductivity and refractory properties. Downscaling TMNs into two-dimensional (2D) forms would provide valuable members to the existing 2D materials repertoire, with potential enhancements…
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The bulk phase of transition metal nitrides (TMNs) has long been a subject of extensive investigation due to their utility as coating materials, electrocatalysts, and diffusion barriers, attributed to their high conductivity and refractory properties. Downscaling TMNs into two-dimensional (2D) forms would provide valuable members to the existing 2D materials repertoire, with potential enhancements across various applications. Moreover, calculations have anticipated the emergence of uncommon physical phenomena in TMNs at the 2D limit. In this study, we use the atomic substitution approach to synthesize 2D W5N6 with tunable thicknesses from tens of nanometers down to 2.9 nm. The obtained flakes exhibit high crystallinity and smooth surfaces. Electrical measurements on 15 samples show an average electrical conductivity of 161.1 S/cm, which persists while thickness decreases from 45.6 nm to 2.9 nm. The observed weak gate tuning effect suggests the semimetallic nature of the synthesized 2D W5N6. Further investigation into the conversion mechanism elucidates the crucial role of chalcogen vacancies in the precursor for initiating the reaction and strain in propagating the conversion. Our work introduces a desired semimetallic crystal to the 2D material library with mechanistic insights for future design of the synthesis.
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Submitted 30 December, 2024;
originally announced December 2024.
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Giant Second Harmonic Generation from Wafer-Scale Aligned Chiral Carbon Nanotubes
Authors:
Rui Xu,
Jacques Doumani,
Viktor Labuntsov,
Nina Hong,
Anna-Christina Samaha,
Weiran Tu,
Fuyang Tay,
Elizabeth Blackert,
Jiaming Luo,
Mario El Tahchi,
Weilu Gao,
Jun Lou,
Yohei Yomogida,
Kazuhiro Yanagi,
Riichiro Saito,
Vasili Perebeinos,
Andrey Baydin,
Junichiro Kono,
Hanyu Zhu
Abstract:
Chiral carbon nanotubes (CNTs) are direct-gap semiconductors with optical properties governed by one-dimensional excitons with enormous oscillator strengths. Each species of chiral CNTs has an enantiomeric pair of left- and right-handed CNTs with nearly identical properties, but enantiomer-dependent phenomena can emerge, especially in nonlinear optical processes. Theoretical studies have predicted…
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Chiral carbon nanotubes (CNTs) are direct-gap semiconductors with optical properties governed by one-dimensional excitons with enormous oscillator strengths. Each species of chiral CNTs has an enantiomeric pair of left- and right-handed CNTs with nearly identical properties, but enantiomer-dependent phenomena can emerge, especially in nonlinear optical processes. Theoretical studies have predicted strong second-order nonlinearities for chiral CNTs, but there has been no experimental verification due to the lack of macroscopically ordered assemblies of single-enantiomer chiral CNTs. Here for the first time, we report the synthesis of centimeter-scale films of densely packed and aligned single-enantiomer chiral CNTs that exhibit micro-fabrication compatibility. We observe giant second harmonic generation (SHG) emission from the chiral CNT film, which originates from the intrinsic chirality and inversion symmetry breaking of the atomic structure of chiral CNTs. The observed value of the dominant element of the second-order nonlinear optical susceptibility tensor reaches $1.5\times 10^{3}$ pm/V at a pump wavelength of 1030 nm, corresponding to the lowest-energy excitonic resonance. Our calculations based on many-body theory correctly estimate the spectrum and magnitude of such excitonically enhanced optical nonlinearity. These results are promising for developing scalable chiral-CNT electronics, nonlinear photonics and photonic quantum computing.
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Submitted 5 July, 2024;
originally announced July 2024.
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QERaman: An open-source program for calculating resonance Raman spectra based on Quantum ESPRESSO
Authors:
Nguyen T. Hung,
Jianqi Huang,
Yuki Tatsumi,
Teng Yang,
Riichiro Saito
Abstract:
We present an open-source program QERaman that computes first-order resonance Raman spectroscopy of materials using the output data from Quantum ESPRESSO. Complex values of Raman tensors are calculated based on the quantum description of the Raman scattering from calculations of electron-photon and electron-phonon matrix elements, which are obtained by using the modified Quantum ESPRESSO. Our prog…
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We present an open-source program QERaman that computes first-order resonance Raman spectroscopy of materials using the output data from Quantum ESPRESSO. Complex values of Raman tensors are calculated based on the quantum description of the Raman scattering from calculations of electron-photon and electron-phonon matrix elements, which are obtained by using the modified Quantum ESPRESSO. Our program also calculates the resonant Raman spectra as a function of incident laser energy for linearly- or circularly-polarized light. Hands-on tutorials for graphene and MoS$_2$ are given to show how to run QERaman. All codes, examples, and scripts are available on the GitHub repository.
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Submitted 10 August, 2023;
originally announced August 2023.
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Controlled synthetic chirality in macroscopic assemblies of carbon nanotubes
Authors:
Jacques Doumani,
Minhan Lou,
Oliver Dewey,
Nina Hong,
Jichao Fan,
Andrey Baydin,
Yohei Yomogida,
Kazuhiro Yanagi,
Matteo Pasquali,
Riichiro Saito,
Junichiro Kono,
Weilu Gao
Abstract:
There is an emerging recognition that successful utilization of chiral degrees of freedom can bring new scientific and technological opportunities to diverse research areas. Hence, methods are being sought for creating artificial matter with controllable chirality in an uncomplicated and reproducible manner. Here, we report the development of two straightforward methods for fabricating wafer-scale…
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There is an emerging recognition that successful utilization of chiral degrees of freedom can bring new scientific and technological opportunities to diverse research areas. Hence, methods are being sought for creating artificial matter with controllable chirality in an uncomplicated and reproducible manner. Here, we report the development of two straightforward methods for fabricating wafer-scale chiral architectures of ordered carbon nanotubes (CNTs) with tunable and giant circular dichroism (CD). Both methods employ simple approaches, (i) mechanical rotation and (ii) twist-stacking, based on controlled vacuum filtration and do not involve any sophisticated nanofabrication processes. We used a racemic mixture of CNTs as the starting material, so the intrinsic chirality of chiral CNTs is not responsible for the observed chirality. In particular, by controlling the stacking angle and handedness in (ii), we were able to maximize the CD response and achieve a record-high deep-ultraviolet ellipticity of 40 $\pm$ 1 mdeg/nm. Our theoretical simulations using the transfer matrix method reproduce the salient features of the experimentally observed CD spectra and further predict that a film of twist-stacked CNTs with an optimized thickness will exhibit an ellipticity as high as 150 mdeg/nm. The created wafer-scale objects represent a new class of synthetic chiral matter consisting of ordered quantum wires whose macroscopic properties are governed by nanoscopic electronic signatures such as van Hove singularities. These artificial structures with engineered chirality will not only provide playgrounds for uncovering new chiral phenomena but also open up new opportunities for developing high-performance chiral photonic and optoelectronic devices.
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Submitted 28 January, 2023;
originally announced January 2023.
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Magneto-Seebeck coefficient of Fermi-liquid in three-dimensional Dirac/Weyl semimetal
Authors:
F. R. Pratama,
Riichiro Saito,
Nguyen T. Hung
Abstract:
We investigate dissipationless magneto-Seebeck effect in three-dimensional Dirac/Weyl semimetal. The Hall resistivity $ρ_{yx}$ and thermoelectric Hall coefficient $α_{xy}$ exhibit plateaus at the quantum limit, where electrons occupy only the zeroth Landau level. In this condition, quantum oscillation in the Seebeck coefficient $S_{xx}\approx ρ_{yx}α_{xy} $ is suppressed, and the massless fermions…
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We investigate dissipationless magneto-Seebeck effect in three-dimensional Dirac/Weyl semimetal. The Hall resistivity $ρ_{yx}$ and thermoelectric Hall coefficient $α_{xy}$ exhibit plateaus at the quantum limit, where electrons occupy only the zeroth Landau level. In this condition, quantum oscillation in the Seebeck coefficient $S_{xx}\approx ρ_{yx}α_{xy} $ is suppressed, and the massless fermions are transformed into a Fermi liquid system. We show that the Seebeck coefficient at the quantum limit is expressed by the harmonic sum of Fermi wavelength and thermal de Broglie wavelength scaled by magnetic length.
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Submitted 10 June, 2022;
originally announced June 2022.
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First-principles calculations of double resonance Raman spectra for monolayer MoTe$_2$
Authors:
Jianqi Huang,
Huaihong Guo,
Lin Zhou,
Shishu Zhang,
Lianming Tong,
Riichiro Saito,
Teng Yang,
Zhidong Zhang
Abstract:
Since double resonance Raman (DRR) spectra are laser-energy dependent, the first-principles calculations of DRR for two-dimensional materials are challenging. Here, the DRR spectrum of monolayer MoTe$_2$ is calculated by home-made program, in which we combine {\em ab-initio} density-functional-theory calculations with the electron-phonon Wannier (EPW) method. Within the fourth-order perturbation t…
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Since double resonance Raman (DRR) spectra are laser-energy dependent, the first-principles calculations of DRR for two-dimensional materials are challenging. Here, the DRR spectrum of monolayer MoTe$_2$ is calculated by home-made program, in which we combine {\em ab-initio} density-functional-theory calculations with the electron-phonon Wannier (EPW) method. Within the fourth-order perturbation theory, we are able to quantify not only the electron-photon matrix elements within the dipole approximation, but also the electron-phonon matrix elements using the Wannier functions. The reasonable agreement between the calculated and experimental Raman spectra is achieved, in which we reproduce some distinctive features of transition metal dichalcogenides (TMDCs) from graphene (for example, the dominant intervalley process involving an electron or a hole). Furthermore, we perform an analysis of the possible DRR modes over the Brillouin zone, highlighting the role of low-symmetry points. Raman tensors for some DRR modes are given by first principles calculations from which laser polarization dependence is obtained.
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Submitted 5 June, 2022; v1 submitted 11 February, 2022;
originally announced February 2022.
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Enhanced thermoelectric performance by van Hove singularities in the density of states of type-II nodal-line semimetals
Authors:
Nguyen T. Hung,
Jyesta M. Adhidewata,
Ahmad R. T. Nugraha,
Riichiro Saito
Abstract:
The effects of the unique density of states (DOS) of a topological type-II nodal-line semimetal (NLS) on its thermoelectric (TE) transport properties are investigated through a combination of semi-analytical and first-principles methods with "spinless Mg$_3$Bi$_2$" as artificial material. The DOS in such a type-II NLS possesses two van Hove singularities near the energy of the nodal line that lead…
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The effects of the unique density of states (DOS) of a topological type-II nodal-line semimetal (NLS) on its thermoelectric (TE) transport properties are investigated through a combination of semi-analytical and first-principles methods with "spinless Mg$_3$Bi$_2$" as artificial material. The DOS in such a type-II NLS possesses two van Hove singularities near the energy of the nodal line that leads to a large $S$ value compared to the normal metals. Combined with the linear band at the nodal line that gives high electrical conductivity $σ$, the type-II NLS can exhibit a relatively high TE power factor ($\text{PF}=S^2σ$) at the nodal line. In particular, we find $\text{PF} \sim 60$ $μ$W/cmK$^2$ at 300 K for the n-type Mg$_3$Bi$_2$ by considering the electron-phonon scattering, in which the relaxation time $τ$ of carriers can be expressed as $τ\propto\text{DOS}^{-1}$ for the type-II NLS. Furthermore, we optimize parameters for the TE power factor of type-II NLSs in general by adopting the two-band model with the DOS-dependent relaxation time approximation. Our results suggest the type-II NLSs as a potential class of high-performance TE materials among metals and semimetals, which are traditionally considered not good TE materials compared to semiconductors.
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Submitted 4 April, 2022; v1 submitted 7 December, 2021;
originally announced December 2021.
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Justification for zeta function regularization
Authors:
F. R. Pratama,
M. Shoufie Ukhtary,
Riichiro Saito
Abstract:
Using the fact that a finite sum of power series are given by the difference between two zeta functions, we justify the usage of the zeta function with a negative variable in physical problems to avoid the divergence of the infinite sum. We will show that in the case of magnetization of graphene, the zeta function with negative variable arises as a result of cut-off energy between two consecutive…
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Using the fact that a finite sum of power series are given by the difference between two zeta functions, we justify the usage of the zeta function with a negative variable in physical problems to avoid the divergence of the infinite sum. We will show that in the case of magnetization of graphene, the zeta function with negative variable arises as a result of cut-off energy between two consecutive Landau levels. Furthermore, similar justification can be applied to the case of zero temperature Casimir force in parallel-plate geometry.
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Submitted 27 September, 2021;
originally announced September 2021.
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Magnetizations and de Haas-van Alphen oscillations in massive Dirac fermions
Authors:
F. R. Pratama,
M. Shoufie Ukhtary,
Riichiro Saito
Abstract:
We theoretically study magnetic field, temperature, and energy band-gap dependences of magnetizations in the Dirac fermions. We use the zeta function regularization to obtain analytical expressions of thermodynamic potential, from which the magnetization of graphene for strong field/low temperature and weak field/high temperature limits are calculated. Further, we generalize the result by consider…
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We theoretically study magnetic field, temperature, and energy band-gap dependences of magnetizations in the Dirac fermions. We use the zeta function regularization to obtain analytical expressions of thermodynamic potential, from which the magnetization of graphene for strong field/low temperature and weak field/high temperature limits are calculated. Further, we generalize the result by considering the effects of impurity on orbital susceptibility of graphene. In particular, we show that in the presence of impurity, the susceptibility follows a scaling law which can be approximated by the Faddeeva function. In the case of the massive Dirac fermions, we show that a large band-gap gives a robust magnetization with respect to temperature and impurity. In the doped Dirac fermion, we discuss the dependence of the band-gap on the period and amplitude of the de Haas-van Alphen effect.
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Submitted 5 January, 2021;
originally announced January 2021.
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Anomalous Phonon-mode Dependence in Polarized Raman Spectroscopy of Topological Weyl Semimetal TaP
Authors:
Kunyan Zhang,
Xiaoqi Pang,
Tong Wang,
Fei Han,
Shun-Li Shang,
Nguyen T. Hung,
Ahmad R. T. Nugraha,
Zi-Kui Liu,
Mingda Li,
Riichiro Saito,
Shengxi Huang
Abstract:
Topological Weyl semimetals (WSMs) have attracted widespread interests due to the chiral Weyl fermions and surface Fermi arcs that enable unique optical and transport phenomena. In this work, we present angle-resolved Raman spectroscopy of TaP, a prototypical noncentrosymmetric WSM, for five excitation wavelengths ranging from 364 to 785 nm. The Raman active modes, $A_1$, $B_1^1$, and $B_1^2$ mode…
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Topological Weyl semimetals (WSMs) have attracted widespread interests due to the chiral Weyl fermions and surface Fermi arcs that enable unique optical and transport phenomena. In this work, we present angle-resolved Raman spectroscopy of TaP, a prototypical noncentrosymmetric WSM, for five excitation wavelengths ranging from 364 to 785 nm. The Raman active modes, $A_1$, $B_1^1$, and $B_1^2$ modes, exhibit two main unique features beyond the conventional Raman theory. First, the relative intensities of Raman active modes change as a function of the excitation wavelength. Second, angle-resolved polarized Raman spectra show systematic deviation from the Raman tensor theory. In particular, the $B_1^1$ mode is absent for 633 nm excitation, whereas the $B_1^2$ mode shows an unusual two-fold symmetry instead of a four-fold symmetry for 488, 532, and 633 nm excitations. These unconventional phenomena are attributed to the interference effect in the Raman process owing to the existence of multiple carrier pockets with almost the same energy but different symmetries.
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Submitted 16 January, 2020;
originally announced January 2020.
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Origin of the flat band in heavily Cs doped graphene
Authors:
N. Ehlen,
M. Hell,
G. Marini,
E. H. Hasdeo,
R. Saito,
G. Di Santo,
L. Petaccia,
G. Profeta,
A. Grüneis
Abstract:
A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the…
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A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculation. Our work highlights that charge transfer, zone folding of graphene bands and the covalent bonding between C and Cs atoms are at the origin of the flat energy band formation. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.
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Submitted 30 May, 2019; v1 submitted 21 March, 2019;
originally announced March 2019.
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Tunable Circular Dichroism and Valley Polarization in the Modified Haldane Model
Authors:
Marc Vila,
Nguyen Tuan Hung,
Stephan Roche,
Riichiro Saito
Abstract:
We study the polarization dependence of optical absorption for the modified Haldane model, which exhibits antichiral edge modes in presence of sample boundaries and has been argued to be realizable in transition metal dichalcogenides or Weyl semimetals. A rich optical phase diagram is unveiled, in which the correlations between perfect circular dichroism, pseudospin and valley polarization can be…
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We study the polarization dependence of optical absorption for the modified Haldane model, which exhibits antichiral edge modes in presence of sample boundaries and has been argued to be realizable in transition metal dichalcogenides or Weyl semimetals. A rich optical phase diagram is unveiled, in which the correlations between perfect circular dichroism, pseudospin and valley polarization can be tuned independently upon varying the Fermi energy. Importantly, perfect circular dichroism and valley polarization are achieved simultaneously. This unprecedented combination of optical properties suggests some interesting novel photonic device functionality (e.g. light polarizer) which could be combined with valleytronics applications (e.g. generation of valley currents).
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Submitted 18 April, 2019; v1 submitted 2 February, 2019;
originally announced February 2019.
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New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials
Authors:
Baojuan Dong,
Zhenhai Wang,
Nguyen T. Hung,
Artem R. Oganov,
Teng Yang,
Riichiro Saito,
Zhidong Zhang
Abstract:
Tin-chalcogenides SnX (X = Te, Se and S) have been arousing research interest due to their thermoelectric physical properties. The two-dimensional (2D) counterparts, which are expected to enhance the property, nevertheless, have not been fully explored because of many possible structures. Generating variable composition of 2D Sn$_{1-x}$X$_{x}$ systems (X = Te, Se and S) has been performed using gl…
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Tin-chalcogenides SnX (X = Te, Se and S) have been arousing research interest due to their thermoelectric physical properties. The two-dimensional (2D) counterparts, which are expected to enhance the property, nevertheless, have not been fully explored because of many possible structures. Generating variable composition of 2D Sn$_{1-x}$X$_{x}$ systems (X = Te, Se and S) has been performed using global searching method based on evolutionary algorithm combining with density functional calculations. A new hexagonal phase named by $β'$-SnX is found by Universal Structure Predictor Evolutionary Xtallography (USPEX), and the structural stability has been further checked by phonon dispersion calculation and the elasticity criteria. The $β'$-SnTe is the most stable among all possible 2D phases of SnTe including those experimentally available phases. Further, $β'$ phases of SnSe and SnS are also found energetically close to the most stable phases. High thermoelectronic (TE) performance has been achieved in the $β'$-SnX phases, which have dimensionless figure of merit (ZT) as high as $\sim$0.96 to 3.81 for SnTe, $\sim$0.93 to 2.51 for SnSe and $\sim$1.19 to 3.18 for SnS at temperature ranging from 300 K to 900 K with practically attainable carrier concentration of 5$\times$10$^{12}$ cm$^{-2}$. The high TE performance is resulted from a high power factor which is attributed to the quantum confinement of 2D materials and the band convergence near Fermi level, as well as low thermal conductivity mainly from both low elastic constants due to weak inter-Sn bonding strength and strong lattice anharmonicity.
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Submitted 1 January, 2019;
originally announced January 2019.
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Intersubband plasmon excitations in doped carbon nanotubes
Authors:
Daria Satco,
Ahmad R. T. Nugraha,
M. Shoufie Ukhtary,
Daria Kopylova,
Albert G. Nasibulin,
Riichiro Saito
Abstract:
We theoretically investigate intersubband plasmon excitations in doped single wall carbon nanotubes (SWNTs) by examining the dependence of plasmon frequency on the nanotube diameter, chirality, and Fermi energy. The intersubband plasmons can be excited by light with polarization perpendicular to the nanotube axis and thus the plasmon excitations corresponds to optical transitions between the two d…
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We theoretically investigate intersubband plasmon excitations in doped single wall carbon nanotubes (SWNTs) by examining the dependence of plasmon frequency on the nanotube diameter, chirality, and Fermi energy. The intersubband plasmons can be excited by light with polarization perpendicular to the nanotube axis and thus the plasmon excitations corresponds to optical transitions between the two different subbands, which are sensitive to the Fermi energy. In every SWNT, this mechanism leads to the emergence of the optical absorption peak at the plasmon frequency for a given Fermi energy, $E_F$. The plasmon frequencies calculated for many SWNTs with diameter $d_t < 2$ nm exhibit a dependence on $(1/d_t)^{0.7}$ and the frequencies are further affected by Fermi energy as $E_F^{0.25}$. With this knowledge, it is possible to develop a map of intersubband plasmon excitations in doped SWNTs that could be useful to quickly estimate the doping level and also be an alternative way to characterize nanotube chirality.
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Submitted 7 February, 2019; v1 submitted 28 November, 2018;
originally announced November 2018.
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Two-dimensional MoS$_2$ electromechanical actuators
Authors:
Nguyen T. Hung,
Ahmad R. T. Nugraha,
Riichiro Saito
Abstract:
We investigate electromechanical properties of two-dimensional MoS$_2$ monolayers in the 1H, 1T, and 1T$^\prime$ structures as a function of charge doping by using density functional theory. We find isotropic elastic moduli in the 1H and 1T structures, while the 1T$^\prime$ structure exhibits an anisotropic elastic modulus. Moreover, the 1T structure is shown to have a negative Poisson's ratio, wh…
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We investigate electromechanical properties of two-dimensional MoS$_2$ monolayers in the 1H, 1T, and 1T$^\prime$ structures as a function of charge doping by using density functional theory. We find isotropic elastic moduli in the 1H and 1T structures, while the 1T$^\prime$ structure exhibits an anisotropic elastic modulus. Moreover, the 1T structure is shown to have a negative Poisson's ratio, while Poisson's ratios of the 1H and 1T$^\prime$ are positive. By charge doping, the monolayer MoS$_2$ shows a reversibly strain and work density per cycle ranging from -0.68% to 2.67% and from 4.4 to 36.9 MJ/m$^3$, respectively, making them suitable for applications in electromechanical actuators. Stress generated is also examined in this work and we find that 1T and 1T$^\prime$ MoS$_2$ monolayers relatively have better performance than 1H MoS$_2$ monolayer. We argue that such excellent electromechanical performance originate from the electrical conductivity of the metallic 1T and semimetallic 1T$^\prime$ structures high Young's modulus of about $150-200$ GPa.
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Submitted 31 October, 2017;
originally announced November 2017.
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Spontaneous antiferromagnetic order and strain effect on electronic properties of $α$-graphyne
Authors:
Baojuan Dong,
Huaihong Guo,
Zhiyong Liu,
Teng Yang,
Peng Tao,
Sufang Tang,
Riichiro Saito,
Zhidong Zhang
Abstract:
Using hybrid exchange-correlation functional in ab initio density functional theory calculations, we study magnetic properties and strain effect on the electronic properties of $α$-graphyne monolayer. We find that a spontaneous antiferromagnetic (AF) ordering occurs with energy band gap ($\sim$ 0.5 eV) in the equilibrated $α$-graphyne. Bi-axial tensile strain enhances the stability of AF state as…
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Using hybrid exchange-correlation functional in ab initio density functional theory calculations, we study magnetic properties and strain effect on the electronic properties of $α$-graphyne monolayer. We find that a spontaneous antiferromagnetic (AF) ordering occurs with energy band gap ($\sim$ 0.5 eV) in the equilibrated $α$-graphyne. Bi-axial tensile strain enhances the stability of AF state as well as the staggered spin moment and value of the energy gap. The antiferromagnetic semiconductor phase is quite robust against moderate carrier filling with threshold carrier density up to 1.7$\times$10$^{14}$ electrons/cm$^2$ to destabilize the phase. The spontaneous AF ordering and strain effect in $α$-graphyne can be well described by the framework of the Hubbard model. Our study shows that it is essential to consider the electronic correlation effect properly in $α$-graphyne and may pave an avenue for exploring magnetic ordering in other carbon allotropes with mixed hybridization of s and p orbitals.
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Submitted 20 October, 2017;
originally announced October 2017.
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Universal curve of optimum thermoelectric figures of merit for bulk and low-dimensional semiconductors
Authors:
Nguyen T. Hung,
Ahmad R. T. Nugraha,
Riichiro Saito
Abstract:
Analytical formulas for thermoelectric figure of merit and power factor are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consistin…
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Analytical formulas for thermoelectric figure of merit and power factor are derived based on the one-band model. We find that there is a direct relationship between the optimum figures of merit and the optimum power factors of semiconductors despite of the fact that the two quantities are generally given by different values of chemical potentials. By introducing a dimensionless parameter consisting of optimum power factor and lattice thermal conductivity (without electronic thermal conductivity), it is possible to unify optimum figures of merit of both bulk and low-dimensional semiconductors into a single universal curve that covers lots of materials with different dimensionalities.
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Submitted 9 January, 2018; v1 submitted 25 September, 2017;
originally announced September 2017.
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Three-dimensional carbon Archimedean lattices for high-performance electromechanical actuators
Authors:
Nguyen T. Hung,
Ahmad R. T. Nugraha,
Riichiro Saito
Abstract:
We propose three-dimensional carbon (3D-C) structures based on the Archimedean lattices (ALs) by combining $sp^2$ bonding in the polygon edges and $sp^3$ bonding in the polygon vertices. By first-principles calculations, four types of 3D-C ALs: (4, $8^2$), (3, $12^2$), ($6^3$), and ($4^4$) 3D-Cs are predicted to be stable both dynamically and mechanically among 11 possible ALs. Depending on the in…
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We propose three-dimensional carbon (3D-C) structures based on the Archimedean lattices (ALs) by combining $sp^2$ bonding in the polygon edges and $sp^3$ bonding in the polygon vertices. By first-principles calculations, four types of 3D-C ALs: (4, $8^2$), (3, $12^2$), ($6^3$), and ($4^4$) 3D-Cs are predicted to be stable both dynamically and mechanically among 11 possible ALs. Depending on the index of ALs, the 3D-C ALs show distinctive electronic properties: the (4, $8^2$) 3D-C is an indirect bandgap semiconductor, the (3, $12^2$) 3D-C is semimetal, while the ($6^3$) and ($4^4$) 3D-Cs are metals. Considering the structural deformation due to the changes in their electronic energy bands, we discuss the electromechanical properties of the 3D-C ALs as a function of charge doping. We find a semiconductor-to-metal and semimetallic-to-semiconductor transitions in the (4, $8^2$) and (3, $12^2$) 3D-Cs as a function of charge doping, respectively. Moreover, the (3, $12^2$) 3D-C exhibits a $sp^2$-$sp^3$ phase transformation at high charge doping, which leads to a huge 30% irreversible strain, while the reversible strain in the (4, $8^2$) 3D-C is up to 9%, and thus they are quite promising for electromechanical actuators.
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Submitted 6 September, 2017; v1 submitted 31 May, 2017;
originally announced May 2017.
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Two-dimensional InSe as a potential thermoelectric material
Authors:
Nguyen T. Hung,
Ahmad R. T. Nugraha,
R. Saito
Abstract:
Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzman transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K$^2$m at 300 K in the armchair direction. The excellent thermoelectric performance of mon…
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Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzman transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K$^2$m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both of its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) band gap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.
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Submitted 1 September, 2017; v1 submitted 18 May, 2017;
originally announced May 2017.
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Charge-induced electrochemical actuation of armchair carbon nanotube bundles
Authors:
Nguyen T. Hung,
Ahmad R. T. Nugraha,
Riichiro Saito
Abstract:
The effects of charge doping on the structural deformation and on the electronic structure of armchair single wall carbon nanotube (SWNT) bundles are investigated through first-principles calculations. In particular, we select a (6; 6) SWNT as an example and we calculate a mechanical deformation in the SWNT bundles as a function of gate voltage, which could serve as a basis of the electromechanica…
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The effects of charge doping on the structural deformation and on the electronic structure of armchair single wall carbon nanotube (SWNT) bundles are investigated through first-principles calculations. In particular, we select a (6; 6) SWNT as an example and we calculate a mechanical deformation in the SWNT bundles as a function of gate voltage, which could serve as a basis of the electromechanical actuators in an artificial muscle. We find that the magnitudes of the actuation responses such as strain and stress of the (6; 6) SWNT bundle in the case of hole doping are substantially larger than those of electron doping. The (6; 6) SWNT bundle also exhibits a low-symmetry and opens an energy band gap of about 0.41 eV around the charge neutral condition, which allows a semiconductor-to-metal transition in the electron-doping regime when the relative shift of the Fermi energy goes up to 0.60 eV, above which the Young modulus increases.
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Submitted 23 April, 2017; v1 submitted 6 December, 2016;
originally announced December 2016.
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Characterization of charge-exchange collisions between ultracold $\rm{^6Li}$ atoms and $\rm{^{40}Ca^+}$ ions
Authors:
R. Saito,
S. Haze,
M. Sasakawa,
R. Nakai,
M. Raoult,
H. Da Silva Jr.,
O. Dulieu,
T. Mukaiyama
Abstract:
We investigate the energy dependence and the internal-state dependence of the charge-exchange collision cross sections in a mixture of $^6$Li atoms and $^{40}$Ca$^+$ ions in the collision energy range from 0.2 mK to 1 K. Deliberately excited ion micromotion is used to control the collision energy of atoms and ions. The energy dependence of the charge-exchange collision cross section obeys the Lang…
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We investigate the energy dependence and the internal-state dependence of the charge-exchange collision cross sections in a mixture of $^6$Li atoms and $^{40}$Ca$^+$ ions in the collision energy range from 0.2 mK to 1 K. Deliberately excited ion micromotion is used to control the collision energy of atoms and ions. The energy dependence of the charge-exchange collision cross section obeys the Langevin model in the temperature range of the current experiment, and the measured magnitude of the cross section is correlated to the internal state of the $^{40}$Ca$^+$ ions. Revealing the relationship between the charge-exchange collision cross sections and the interaction potentials is an important step toward the realization of the full quantum control of the chemical reactions at an ultralow temperature regime.
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Submitted 3 April, 2017; v1 submitted 25 August, 2016;
originally announced August 2016.
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Phonon-assisted indirect transitions in angle-resolved photoemission spectra of graphite and graphene
Authors:
Pourya Ayria,
Shin-ichiro Tanaka,
Ahmad R. T. Nugraha,
Mildred S. Dresselhaus,
Riichiro Saito
Abstract:
Indirect transitions of electrons in graphene and graphite are investigated by means of angle-resolved photoemission spectroscopy (ARPES) with several different incident photon energies and light polarizations. The theoretical calculations of the indirect transition for graphene and graphite are compared with the experimental measurements for highly-oriented pyrolytic graphite and a single-crystal…
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Indirect transitions of electrons in graphene and graphite are investigated by means of angle-resolved photoemission spectroscopy (ARPES) with several different incident photon energies and light polarizations. The theoretical calculations of the indirect transition for graphene and graphite are compared with the experimental measurements for highly-oriented pyrolytic graphite and a single-crystal of graphite. The dispersion relations for the transverse optical (TO) and the out-of-plane longitudinal acoustic (ZA) phonon modes of graphite and the TO phonon mode of graphene can be extracted from the inelastic ARPES intensity. We find that the TO phonon mode for $k$ points along the $Γ$-$K$ and $K$-$M$-$K'$ directions in the Brillouin zone can be observed in the ARPES spectra of graphite and graphene by using a photon energy of about 11.1 eV. The relevant mechanism in the ARPES process for this case is the resonant indirect transition. On the other hand, the ZA phonon mode of graphite can be observed by using a photon energy of about 6.3 eV through a nonresonant indirect transition, while the ZA phonon mode of graphene within the same mechanism should not be observed.
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Submitted 22 August, 2016;
originally announced August 2016.
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Broadband Transverse Electric Surface Wave in Silicene
Authors:
M. Shoufie Ukhtary,
Ahmad R. T. Nugraha,
Eddwi H. Hasdeo,
Riichiro Saito
Abstract:
Transverse electric (TE) surface wave in silicine is theoretically investigated. The TE surface wave in silicene is found to exhibit better characteristics compared with that in graphene, in terms of a broader frequency range and more confinement to the surface which originate from the buckled structure of silicene. We found that even undoped silicene can support the TE surface wave. We expect to…
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Transverse electric (TE) surface wave in silicine is theoretically investigated. The TE surface wave in silicene is found to exhibit better characteristics compared with that in graphene, in terms of a broader frequency range and more confinement to the surface which originate from the buckled structure of silicene. We found that even undoped silicene can support the TE surface wave. We expect to obtain the similar characteristics of the TE surface wave in other two-dimensional materials that have slightly buckled honeycomb lattice.
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Submitted 2 August, 2016; v1 submitted 25 May, 2016;
originally announced May 2016.
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Selective coherent phonon mode generation in single wall carbon nanotubes
Authors:
Ahmad R. T. Nugraha,
Eddwi H. Hasdeo,
Riichiro Saito
Abstract:
The pulse-train technique within ultrafast pump-probe spectroscopy is theoretically investigated to enhance a specific coherent phonon mode while suppressing the other phonon modes generated in single wall carbon nanotubes (SWNTs). In particular, we focus on the selectivity of the radial breathing mode (RBM) and the G-band for a given SWNT. We find that if the repetition period of the pulse train…
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The pulse-train technique within ultrafast pump-probe spectroscopy is theoretically investigated to enhance a specific coherent phonon mode while suppressing the other phonon modes generated in single wall carbon nanotubes (SWNTs). In particular, we focus on the selectivity of the radial breathing mode (RBM) and the G-band for a given SWNT. We find that if the repetition period of the pulse train matches with integer multiple of the RBM phonon period, the RBM amplitude could be kept while the amplitudes of the other modes are suppressed. As for the G-band, when we apply a repetition period of half-integer multiple of the RBM period, the RBM could be suppressed because of destructive interference, while the G-band still survives. It is also possible to keep the G-band and suppress the RBM by applying a repetition period that matches with integer multiple of the G-band phonon period. However, in this case we have to use a large number of laser pulses having a property of "magic ratio" of the G-band and RBM periods.
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Submitted 21 November, 2016; v1 submitted 10 May, 2016;
originally announced May 2016.
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Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect
Authors:
Eddwi H. Hasdeo,
Ahmad R. T. Nugraha,
Mildred Dresselhaus,
Riichiro Saito
Abstract:
Intensity of the first- and the second-order Raman spectra are calculated as a function of the Fermi energy. We show that the Kohn anomaly effect, i.e., phonon frequency renormalization, in the first-order Raman spectra originates from the phonon renormalization by the interband electron-hole excitation, whereas in the second-order Raman spectra, a competition between the interband and intraband e…
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Intensity of the first- and the second-order Raman spectra are calculated as a function of the Fermi energy. We show that the Kohn anomaly effect, i.e., phonon frequency renormalization, in the first-order Raman spectra originates from the phonon renormalization by the interband electron-hole excitation, whereas in the second-order Raman spectra, a competition between the interband and intraband electron-hole excitations takes place. By this calculation, we confirm the presence of different dispersive behaviors of the Raman peak frequency as a function of the Fermi energy for the first- and the second-order Raman spectra, as observed in experiments. Moreover, the calculated results of the Raman intensity sensitively depend on the Fermi energy for both the first- and the second-order Raman spectra. These results thus also show the importance of quantum interference effect phenomena.
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Submitted 9 May, 2016;
originally announced May 2016.
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Quantum effects in the thermoelectric power factor of low-dimensional semiconductors
Authors:
Nguyen T. Hung,
Eddwi H. Hasdeo,
Ahmad R. T. Nugraha,
Mildred S. Dresselhaus,
Riichiro Saito
Abstract:
We theoretically investigate the interplay between the confinement length $L$ and the thermal de Broglie wavelength $Λ$ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low dimensional semiconductors.…
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We theoretically investigate the interplay between the confinement length $L$ and the thermal de Broglie wavelength $Λ$ to optimize the thermoelectric power factor of semiconducting materials. An analytical formula for the power factor is derived based on the one-band model assuming nondegenerate semiconductors to describe quantum effects on the power factor of the low dimensional semiconductors. The power factor is enhanced for one- and two-dimensional semiconductors when $L$ is smaller than $Λ$ of the semiconductors. In this case, the low-dimensional semiconductors having $L$ smaller than their $Λ$ will give a better thermoelectric performance compared to their bulk counterpart. On the other hand, when $L$ is larger than $Λ$, bulk semiconductors may give a higher power factor compared to the lower dimensional ones.
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Submitted 30 June, 2016; v1 submitted 15 April, 2016;
originally announced April 2016.
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Angular momentum and topology in semiconducting single-wall carbon nanotubes
Authors:
W. Izumida,
R. Okuyama,
A. Yamakage,
R. Saito
Abstract:
Semiconducting single-wall carbon nanotubes are classified into two types by means of orbital angular momentum of valley state, which is useful to study their low energy electronic properties in finite-length. The classification is given by an integer $d$, which is the greatest common divisor of two integers $n$ and $m$ specifying the chirality of nanotubes, by analyzing cutting lines. For the cas…
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Semiconducting single-wall carbon nanotubes are classified into two types by means of orbital angular momentum of valley state, which is useful to study their low energy electronic properties in finite-length. The classification is given by an integer $d$, which is the greatest common divisor of two integers $n$ and $m$ specifying the chirality of nanotubes, by analyzing cutting lines. For the case that $d$ is equal to or greater than four, two lowest subbands from two valleys have different angular momenta with respect to the nanotube axis. Reflecting the decoupling of two valleys, discrete energy levels in finite-length nanotubes exhibit nearly fourfold degeneracy and its small lift by the spin-orbit interaction. For the case that $d$ is less than or equal to two, in which two lowest subbands from two valleys have the same angular momentum, discrete levels exhibit lift of fourfold degeneracy reflecting the coupling of two valleys. Especially, two valleys are strongly coupled when the chirality is close to the armchair chirality. An effective one-dimensional lattice model is derived by extracting states with relevant angular momentum, which reveals the valley coupling in the eigenstates. A bulk-edge correspondence, relationship between number of edge states and the winding number calculated in the corresponding bulk system, is analytically shown by using the argument principle, which enables us to estimate the number of edge states from the bulk property. The number of edge states depends not only on the chirality but also on the shape of boundary.
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Submitted 21 March, 2016;
originally announced March 2016.
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Intrinsic strength and failure behaviors of ultra-small single-walled carbon nanotubes
Authors:
Nguyen Tuan Hung,
Do Van Truong,
Vuong Van Thanh,
Riichiro Saito
Abstract:
The intrinsic mechanical strength of single-walled carbon nanotubes (SWNTs) within the diameter range of 0.3-0.8 nm has been studied based on ab initio density functional theory calculations. In contrast to predicting "smaller is stronger and more elastic" in nanomaterials, the strength of the SWNTs is significantly reduced when decreasing the tube diameter. The results obtained show that the Youn…
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The intrinsic mechanical strength of single-walled carbon nanotubes (SWNTs) within the diameter range of 0.3-0.8 nm has been studied based on ab initio density functional theory calculations. In contrast to predicting "smaller is stronger and more elastic" in nanomaterials, the strength of the SWNTs is significantly reduced when decreasing the tube diameter. The results obtained show that the Young`s modulus E significantly reduced in the ultra-small SWNTs with the diameter less than 0.4 nm originates from their very large curvature effect, while it is a constant of about 1.0 TPa, and independent of the diameter and chiral index for the large tube. We find that the Poisson`s ratio, ideal strength and ideal strain are dependent on the diameter and chiral index. Furthermore, the relations between E and ideal strength indicate that Griffith`s estimate of brittle fracture could break down in the smallest (2, 2) nanotube, with the breaking strength of 15% of E. Our results provide important insights into intrinsic mechanical behavior of ultra-small SWNTs under their curvature effect.
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Submitted 5 January, 2016;
originally announced January 2016.
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Diameter dependence of thermoelectric power of semiconducting carbon nanotubes
Authors:
Nguyen T. Hung,
Ahmad R. T. Nugraha,
Eddwi H. Hasdeo,
Mildred S. Dresselhaus,
Riichiro Saito
Abstract:
We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5-1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding model. We find that the thermopower of s-SWNTs increases as the tube diameter decreases. For some s-SWNTs with diameters less than 0.6 nm, the thermopower can reach…
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We calculate the thermoelectric power (or thermopower) of many semiconducting single wall carbon nanotubes (s-SWNTs) within a diameter range 0.5-1.5 nm by using the Boltzmann transport formalism combined with an extended tight-binding model. We find that the thermopower of s-SWNTs increases as the tube diameter decreases. For some s-SWNTs with diameters less than 0.6 nm, the thermopower can reach a value larger than 2000 μV/K at room temperature, which is about 6 to 10 times larger than that found in commonly used thermoelectric materials. The large thermopower values may be attributed to the one-dimensionality of the nanotubes and to the presence of large band gaps of the small-diameter s-SWNTs. We derive an analytical formula to reproduce the numerical calculation of the thermopower and we find that the thermopower of a given s-SWNT is directly related with its band gap. The formula also explains the shape of the thermopower as a function of tube diameter, which looks similar to the shape of the so-called Kataura plot of the band gap dependence on tube diameter.
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Submitted 24 October, 2015; v1 submitted 24 August, 2015;
originally announced August 2015.
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Valley coupling in finite-length metallic single-wall carbon nanotubes
Authors:
W. Izumida,
R. Okuyama,
R. Saito
Abstract:
Degeneracy of discrete energy levels of finite-length, metallic single-wall carbon nanotubes depends on type of nanotubes, boundary condition, length of nanotubes and spin-orbit interaction. Metal-1 nanotubes, in which two non-equivalent valleys in the Brillouin zone have different orbital angular momenta with respect to the tube axis, exhibits nearly fourfold degeneracy and small lift of the dege…
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Degeneracy of discrete energy levels of finite-length, metallic single-wall carbon nanotubes depends on type of nanotubes, boundary condition, length of nanotubes and spin-orbit interaction. Metal-1 nanotubes, in which two non-equivalent valleys in the Brillouin zone have different orbital angular momenta with respect to the tube axis, exhibits nearly fourfold degeneracy and small lift of the degeneracy by the spin-orbit interaction reflecting the decoupling of two valleys in the eigenfunctions. In metal-2 nanotubes, in which the two valleys have the same orbital angular momentum, vernier-scale-like spectra appear for boundaries of orthogonal-shaped edge or cap-termination reflecting the strong valley coupling and the asymmetric velocities of the Dirac states. Lift of the fourfold degeneracy by parity splitting overcomes the spin-orbit interaction in shorter nanotubes with a so-called minimal boundary. Slowly decaying evanescent modes appear in the energy gap induced by the curvature of nanotube surface. Effective one-dimensional model reveals the role of boundary on the valley coupling in the eigenfunctions.
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Submitted 21 April, 2015;
originally announced April 2015.
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Double resonance Raman modes in mono- and few-layer MoTe$_2$
Authors:
Huaihong Guo,
Teng Yang,
Mahito Yamamoto,
Lin Zhou,
Ryo Ishikawa,
Keiji Ueno,
Kazuhito Tsukagoshi,
Zhidong Zhang,
Mildred S. Dresselhaus,
Riichiro Saito
Abstract:
We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining {\em ab initio} density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the electron-photon resonance process occurs at the high-symmetry M point in the Brillouin zon…
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We study the second-order Raman process of mono- and few-layer MoTe$_2$, by combining {\em ab initio} density functional perturbation calculations with experimental Raman spectroscopy using 532, 633 and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the electron-photon resonance process occurs at the high-symmetry M point in the Brillouin zone, where a strong optical absorption occurs by a logarithmic Van-Hove singularity. Double resonance Raman scattering with inter-valley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M point phonons. The predicted frequencies of the second-order Raman peaks agree with the observed peak positions that cannot be assigned in terms of a first-order process. Our study attempts to supply a basic understanding of the second-order Raman process occurring in transition metal di-chalcogenides (TMDs) and may provide additional information both on the lattice dynamics and optical processes especially for TMDs with small energy band gaps such as MoTe$_2$ or at high laser excitation energy.
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Submitted 8 June, 2015; v1 submitted 28 January, 2015;
originally announced January 2015.
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Disorder-induced double resonant Raman process in graphene
Authors:
J. F. Rodriguez-Nieva,
E. B. Barros,
R. Saito,
M. S. Dresselhaus
Abstract:
An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D$^{\prime}$ features in the Raman spectra. This work yields analytical expressions for the D and D$^{\prime}$ integrated Raman intensities that explicitly show the dependencies on laser energy, defect concentration, and electronic lifetime. Good agreement is obtained between the…
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An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D$^{\prime}$ features in the Raman spectra. This work yields analytical expressions for the D and D$^{\prime}$ integrated Raman intensities that explicitly show the dependencies on laser energy, defect concentration, and electronic lifetime. Good agreement is obtained between the analytical results and experimental measurements on samples with increasing defect concentrations and at various laser excitation energies. The use of Raman spectroscopy to identify the nature of defects is discussed. Comparison between the models for the edge-induced and the disorder-induced D band intensity suggests that edges or grain boundaries can be distinguished from disorder by the different dependence of their Raman intensity on laser excitation energy. Similarly, the type of disorder can potentially be identified not only by the intensity ratio $I_{\mathrm{D}}/I_{\mathrm{D}^{\prime}}$, but also by its laser energy dependence. Also discussed is a quantitative analysis of quantum interference effects of the graphene wavefunctions, which determine the most important phonon wavevectors and scattering processes responsible for the D and D$^{\prime}$ bands.
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Submitted 28 November, 2014;
originally announced November 2014.
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Origin of coherent G band phonon spectra in single wall carbon nanotubes
Authors:
A. R. T. Nugraha,
E. H. Hasdeo,
G. D. Sanders,
C. J. Stanton,
R. Saito
Abstract:
Coherent phonons in single wall carbon nanotubes (SWNTs) are observed as oscillations of the differential absorption coefficient as a function of time by means of pump-probe spectroscopy. For the radial breathing mode (RBM) of a SWNT, the coherent phonon signal is understood to be a result of the modulated diameter-dependent energy gaps due to the coherent RBM phonon oscillations. However, this me…
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Coherent phonons in single wall carbon nanotubes (SWNTs) are observed as oscillations of the differential absorption coefficient as a function of time by means of pump-probe spectroscopy. For the radial breathing mode (RBM) of a SWNT, the coherent phonon signal is understood to be a result of the modulated diameter-dependent energy gaps due to the coherent RBM phonon oscillations. However, this mechanism might not be the dominant contribution to other phonon modes in the SWNT. In particular, for the G band phonons, which correspond to bond-stretching motions, we find that the modulation of the interatomic dipole matrix element gives rise to a strong coherent G band phonon intensity comparable to the coherent RBM phonon intensity. We also further discuss the dependence of coherent G band and RBM phonon amplitudes on the laser excitation pulse width.
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Submitted 6 August, 2014; v1 submitted 4 August, 2014;
originally announced August 2014.
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Breit-Wigner-Fano lineshapes in Raman spectra of graphene
Authors:
Eddwi H. Hasdeo,
Ahmad R. T. Nugraha,
Mildred S. Dresselhaus,
Riichiro Saito
Abstract:
Excitation of electron-hole pairs in the vicinity of the Dirac cone by the Coulomb interaction gives rise to an asymmetric Breit-Wigner-Fano lineshape in the phonon Raman spectra in graphene. This asymmetric lineshape appears due to the interference effect between the phonon spectra and the electron-hole pair excitation spectra. The calculated Breit-Wigner-Fano asymmetric factor 1/qBWF as a functi…
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Excitation of electron-hole pairs in the vicinity of the Dirac cone by the Coulomb interaction gives rise to an asymmetric Breit-Wigner-Fano lineshape in the phonon Raman spectra in graphene. This asymmetric lineshape appears due to the interference effect between the phonon spectra and the electron-hole pair excitation spectra. The calculated Breit-Wigner-Fano asymmetric factor 1/qBWF as a function of the Fermi energy shows a V-shaped curve with a minimum value at the charge neutrality point and gives good agreement with the experimental result.
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Submitted 16 June, 2014;
originally announced June 2014.
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Ultrafast Generation of Fundamental and Multiple-order Phonon Excitations in Highly-Enriched (6,5) Single-Wall Carbon Nanotubes
Authors:
Y. -S. Lim,
A. R. T. Nugraha,
S. -J. Cho,
M. -Y. Noh,
E. -J. Yoon,
H. Liu,
J. -H. Kim,
H. Telg,
E. H. Haroz,
G. D. Sanders,
S. -H. Baik,
H. Kataura,
S. K. Doorn,
C. J. Stanton,
R. Saito,
J. Kono,
T. Joo
Abstract:
Using a macroscopic ensemble of highly-enriched (6,5) single-wall carbon nanotubes, combined with high signal-to-noise ratio, time-dependent differential transmission spectroscopy, we have generated vibrational modes in an ultrawide spectral range (10-3000 cm^{-1}). A total of fourteen modes were clearly resolved and identified, including fundamental modes of A, E1, and E2 symmetries and their com…
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Using a macroscopic ensemble of highly-enriched (6,5) single-wall carbon nanotubes, combined with high signal-to-noise ratio, time-dependent differential transmission spectroscopy, we have generated vibrational modes in an ultrawide spectral range (10-3000 cm^{-1}). A total of fourteen modes were clearly resolved and identified, including fundamental modes of A, E1, and E2 symmetries and their combinational modes involving two and three phonons. Through comparison with CW Raman spectra as well as calculations based on an extended tight-binding model, we were able to identify all the observed peaks and determine the frequencies of the individual and combined modes. We provide a full summary of phonon frequencies for (6,5) nanotubes that can serve as a basic reference with which to refine our understanding of nanotube phonon spectra as well as a testbed for new theoretical models.
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Submitted 14 December, 2013;
originally announced December 2013.
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Fano resonance in Raman scattering of graphene
Authors:
Duhee Yoon,
Dongchan Jeong,
Hu-Jong Lee,
Riichiro Saito,
Young-Woo Son,
Hyun Cheol Lee,
Hyeonsik Cheong
Abstract:
Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G…
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Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.
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Submitted 23 May, 2013;
originally announced May 2013.
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Excitonic effects on coherent phonon dynamics in single wall carbon nanotubes
Authors:
Ahmad R. T. Nugraha,
Eric Rosenthal,
Eddwi H. Hasdeo,
Gary D. Sanders,
Christopher J. Stanton,
Mildred S. Dresselhaus,
Riichiro Saito
Abstract:
We discuss how excitons can affect the generation of coherent radial breathing modes in ultrafast spectroscopy of single wall carbon nanotubes. Photoexcited excitons can be localized spatially and give rise to a spatially distributed driving force in real space which involves many phonon wavevectors of the exciton-phonon interaction. The equation of motion for the coherent phonons is modeled pheno…
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We discuss how excitons can affect the generation of coherent radial breathing modes in ultrafast spectroscopy of single wall carbon nanotubes. Photoexcited excitons can be localized spatially and give rise to a spatially distributed driving force in real space which involves many phonon wavevectors of the exciton-phonon interaction. The equation of motion for the coherent phonons is modeled phenomenologically by the Klein-Gordon equation, which we solve for the oscillation amplitudes as a function of space and time. By averaging the calculated amplitudes per nanotube length, we obtain time-dependent coherent phonon amplitudes that resemble the homogeneous oscillations that are observed in some pump-probe experiments. We interpret this result to mean that the experiments are only able to see a spatial average of coherent phonon oscillations over the wavelength of light in carbon nanotubes and the microscopic details are averaged out. Our interpretation is justified by calculating the time-dependent absorption spectra resulting from the macroscopic atomic displacements induced by the coherent phonon oscillations. The calculated coherent phonon spectra including excitonic effects show the experimentally observed symmetric peaks at the nanotube transition energies in contrast to the asymmetric peaks that would be obtained if excitonic effects were not included.
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Submitted 20 November, 2013; v1 submitted 7 May, 2013;
originally announced May 2013.
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Origin of electronic Raman scattering and the Fano resonance in metallic carbon nanotubes
Authors:
Eddwi H. Hasdeo,
Ahmad R. T. Nugraha,
Kentaro Sato,
Riichiro Saito,
Mildred S. Dresselhaus
Abstract:
Fano resonance spectra for the G band in metallic carbon nanotubes are calculated as a function of laser excitation energy in which the origin of the resonance is given by an interference between the continuous electronic Raman spectra and the discrete phonon spectra. We found that the second-order scattering process of the non-zero q electron-electron interaction is more relevant to the continuou…
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Fano resonance spectra for the G band in metallic carbon nanotubes are calculated as a function of laser excitation energy in which the origin of the resonance is given by an interference between the continuous electronic Raman spectra and the discrete phonon spectra. We found that the second-order scattering process of the non-zero q electron-electron interaction is more relevant to the continuous spectra rather than the q = 0 first-order process because the q = 0 direct Coulomb interaction vanishes due to the symmetry of the two sublattices of a nanotube. We also show that the RBM spectra of metallic carbon nanotubes have an asymmetric line shape which previously had been overlooked.
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Submitted 4 February, 2013; v1 submitted 31 January, 2013;
originally announced January 2013.
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Luminescence Properties of Individual Empty and Water-filled Single-Walled Carbon Nanotubes
Authors:
Sofie Cambré,
Silvia Santos,
Wim Wenseleers,
Ahmad Nugraha,
Riichiro Saito,
Laurent Cognet,
Brahim Lounis
Abstract:
The influence of water-filling on the photoluminescence (PL) properties of SWCNTs is studied by ensemble and single-molecule PL spectroscopy. Red-shifted PL and PL excitation spectra are observed upon water filling for 16 chiralities and can be used to unambiguously distinguish empty SWCNTs from filled ones. The effect of water-filling on the optical transitions is well reproduced by a continuum d…
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The influence of water-filling on the photoluminescence (PL) properties of SWCNTs is studied by ensemble and single-molecule PL spectroscopy. Red-shifted PL and PL excitation spectra are observed upon water filling for 16 chiralities and can be used to unambiguously distinguish empty SWCNTs from filled ones. The effect of water-filling on the optical transitions is well reproduced by a continuum dielectric constant model previously developed to describe the influence of the nanotube outer environment. Empty nanotubes display narrower luminescence lines and lower inhomogeneous broadening, signatures of reduced extrinsic perturbations. The radial breathing mode (RBM) phonon side band is clearly observed in the PL spectrum of small diameter empty tubes and a strong exciton-phonon coupling is measured for this vibration. Biexponential PL decays are observed for empty and water filled tubes, and only the short living component is influenced by the water-filling. This may be attributed to a shortening of the radiative lifetime of the bright state by the inner dielectric environment.
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Submitted 26 September, 2012;
originally announced September 2012.
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Coherent Phonons in Carbon Nanotubes and Graphene
Authors:
J. -H. Kim,
A. R. T. Nugraha,
L. G. Booshehri,
E. H. Hároz,
K. Sato,
G. D. Sanders,
K. -J. Yee,
Y. -S. Lim,
C. J. Stanton,
R. Saito,
J. Kono
Abstract:
We review recent studies of coherent phonons (CPs) corresponding to the radial breathing mode (RBM) and G-mode in single-wall carbon nanotubes (SWCNTs) and graphene. Because of the bandgap-diameter relationship, RBM-CPs cause bandgap oscillations in SWCNTs, modulating interband transitions at terahertz frequencies. Interband resonances enhance CP signals, allowing for chirality determination. Usin…
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We review recent studies of coherent phonons (CPs) corresponding to the radial breathing mode (RBM) and G-mode in single-wall carbon nanotubes (SWCNTs) and graphene. Because of the bandgap-diameter relationship, RBM-CPs cause bandgap oscillations in SWCNTs, modulating interband transitions at terahertz frequencies. Interband resonances enhance CP signals, allowing for chirality determination. Using pulse shaping, one can selectively excite speci!c-chirality SWCNTs within an ensemble. G-mode CPs exhibit temperature-dependent dephasing via interaction with RBM phonons. Our microscopic theory derives a driven oscillator equation with a density-dependent driving term, which correctly predicts CP trends within and between (2n+m) families. We also find that the diameter can initially increase or decrease. Finally, we theoretically study the radial breathing like mode in graphene nanoribbons. For excitation near the absorption edge, the driving term is much larger for zigzag nanoribbons. We also explain how the armchair nanoribbon width changes in response to laser excitation.
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Submitted 27 May, 2012;
originally announced May 2012.
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Observation of out-of-plane vibrations in few-layer graphene
Authors:
Chun Hung Lui,
Leandro M. Malard,
SukHyun Kim,
Gabriel Lantz,
François E. Laverge,
Riichiro Saito,
Tony F. Heinz
Abstract:
We report the observation of layer breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from 2 to 6 layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm-1. From double resonance theory, we identify the feature as the LOZO' combination mode of the out-of-plane LBM…
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We report the observation of layer breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from 2 to 6 layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm-1. From double resonance theory, we identify the feature as the LOZO' combination mode of the out-of-plane LBM (ZO') and the in-plane longitudinal optical mode (LO). The LOZO' Raman band is found to exhibit multiple peaks, with a unique line shape for each layer thickness and stacking order. These complex line shapes of the LOZO'-mode arise both from the material-dependent selection of different phonons in the double-resonance Raman process and from the detailed structure of the different branches of LBM in FLG.
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Submitted 7 April, 2012;
originally announced April 2012.
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Phonon self-energy corrections to non-zero wavevector phonon modes in single-layer graphene
Authors:
P. T. Araujo,
D. L. Mafra,
K. Sato,
R. Saito,
J. Kong,
M. S. Dresselhaus
Abstract:
Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the G* and the G'-band features originating from a double-resonant Raman process with q \not= 0.…
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Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the G* and the G'-band features originating from a double-resonant Raman process with q \not= 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with non-zero wave-vectors (q \not= 0) in 1LG in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G* Raman feature at 2450 cm-1 to include the iTO+LA combination modes with q \not= 0 and the 2iTO overtone modes with q = 0, showing both to be associated with wave-vectors near the high symmetry point K in the Brillouin zone.
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Submitted 2 March, 2012;
originally announced March 2012.
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Coherent radial breathing like phonons in graphene nanoribbons
Authors:
G. D. Sanders,
A. R. T. Nugraha,
R. Saito,
C. J. Stanton
Abstract:
We have developed a microscopic theory for the generation and detection of coherent phonons in armchair and zigzag carbon nanoribbons using an extended tight-binding model for the electronic states and a valence force field model for the phonons. The coherent phonon amplitudes satisfy a driven oscillator equation with the driving term depending on photoexcited carrier density. We examine the coher…
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We have developed a microscopic theory for the generation and detection of coherent phonons in armchair and zigzag carbon nanoribbons using an extended tight-binding model for the electronic states and a valence force field model for the phonons. The coherent phonon amplitudes satisfy a driven oscillator equation with the driving term depending on photoexcited carrier density. We examine the coherent phonon radial breathing like mode amplitudes as a function of excitation energies and nanoribbon types. For photoexcitation near the optical absorption edge the coherent phonon driving term for the radial breathing like mode is much larger for zigzag nanoribbons where transitions between localized edge states provide the dominant contribution to the coherent phonon driving term. Using an effective mass theory, we explain how the armchair nanoribbon width changes in response to laser excitation.
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Submitted 2 May, 2012; v1 submitted 25 January, 2012;
originally announced January 2012.
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Observation of Electronic Raman Scattering in Metallic Carbon Nanotubes
Authors:
Hootan Farhat,
Stéphane berciaud,
Martin Kalbac,
Riichiro Saito,
Tony F. Heinz,
Mildred S. Dresselhaus,
Jing Kong
Abstract:
We present experimental measurements of the electronic contribution to the Raman spectra of individual metallic single-walled carbon nanotubes (MSWNTs). Photoexcited carriers are inelastically scattered by a continuum of low-energy electron-hole pairs created across the graphenelike linear electronic subbands of the MSWNTs. The optical resonances in MSWNTs give rise to well-defined electronic Rama…
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We present experimental measurements of the electronic contribution to the Raman spectra of individual metallic single-walled carbon nanotubes (MSWNTs). Photoexcited carriers are inelastically scattered by a continuum of low-energy electron-hole pairs created across the graphenelike linear electronic subbands of the MSWNTs. The optical resonances in MSWNTs give rise to well-defined electronic Raman peaks. This resonant electronic Raman scattering is a unique feature of the electronic structure of these one-dimensional quasimetals.
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Submitted 19 October, 2011;
originally announced October 2011.
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Polarization Dependence of Optical Transitions in Graphene Nanoribbons
Authors:
K. Sasaki,
K. Kato,
Y. Tokura,
T. Sogawa,
R. Saito
Abstract:
The universality of $k$-dependent electron-photon and electron-phonon matrix elements is discussed for graphene nanoribbons and carbon nanotubes. An electron undergoes a change in wavevector in the direction of broken translational symmetry, depending on the light polarization direction. We suggest that this phenomenon originates from a microscopic feature of chirality.
The universality of $k$-dependent electron-photon and electron-phonon matrix elements is discussed for graphene nanoribbons and carbon nanotubes. An electron undergoes a change in wavevector in the direction of broken translational symmetry, depending on the light polarization direction. We suggest that this phenomenon originates from a microscopic feature of chirality.
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Submitted 30 July, 2011;
originally announced August 2011.
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Second-order Overtone and Combinational Raman Modes of Graphene Layers in the Range of 1690 cm-1 to 2150 cm-1
Authors:
Chunxiao Cong,
Ting Yu,
Riichiro Saito
Abstract:
Though graphene has been intensively studied by Raman spectroscopy, in this letter, we report a study of second-order overtone and combinational Raman modes in an unexplored range of 1690-2150 cm-1 in nonsuspended commensurate (AB-stacked), incommensurate (folded) and suspended graphene layers. Based on the double resonance theory, four dominant modes in this range have been assigned as 2oTO (M ba…
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Though graphene has been intensively studied by Raman spectroscopy, in this letter, we report a study of second-order overtone and combinational Raman modes in an unexplored range of 1690-2150 cm-1 in nonsuspended commensurate (AB-stacked), incommensurate (folded) and suspended graphene layers. Based on the double resonance theory, four dominant modes in this range have been assigned as 2oTO (M band), iTA+LO, iTO+LA and LO+LA. Differing to AB-stacked bilayer graphene or few layer graphene, the M band disappears in single layer graphene. Systematic analysis reveals that interlayer interaction is essential for the presence (or absence) of M band whereas the substrate has no effect on this. Dispersive behaviors of these "new" Raman modes in graphene have been probed by the excitation energy dependent Raman spectroscopy. It is found that the appearance of the M band strictly relies on the AB stacking, which could be a fingerprint of AB-stacked bilayer graphene. This work expands the unique and powerful abilities of Raman spectroscopy on study of graphene and provides another effective way to probe phonon dispersion, electron-phonon coupling, and to exploit electronic band structure of graphene layers.
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Submitted 16 October, 2010;
originally announced October 2010.
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Soliton Trap in Strained Graphene Nanoribbons
Authors:
Ken-ichi Sasaki,
Riichiro Saito,
Mildred S. Dresselhaus,
Katsunori Wakabayashi,
Toshiaki Enoki
Abstract:
The wavefunction of a massless fermion consists of two chiralities, left-handed and right-handed, which are eigenstates of the chiral operator. The theory of weak interactions of elementally particle physics is not symmetric about the two chiralities, and such a symmetry breaking theory is referred to as a chiral gauge theory. The chiral gauge theory can be applied to the massless Dirac particles…
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The wavefunction of a massless fermion consists of two chiralities, left-handed and right-handed, which are eigenstates of the chiral operator. The theory of weak interactions of elementally particle physics is not symmetric about the two chiralities, and such a symmetry breaking theory is referred to as a chiral gauge theory. The chiral gauge theory can be applied to the massless Dirac particles of graphene. In this paper we show within the framework of the chiral gauge theory for graphene that a topological soliton exists near the boundary of a graphene nanoribbon in the presence of a strain. This soliton is a zero-energy state connecting two chiralities and is an elementally excitation transporting a pseudospin. The soliton should be observable by means of a scanning tunneling microscopy experiment.
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Submitted 1 July, 2010; v1 submitted 1 July, 2010;
originally announced July 2010.
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Kohn Anomaly in Raman Spectroscopy of Single Wall Carbon Nanotubes
Authors:
K. Sasaki,
H. Farhat,
R. Saito,
M. S. Dresselhaus
Abstract:
Phonon softening phenomena of the $Γ$ point optical modes including the longitudinal optical mode, transverse optical mode and radial breathing mode in "metallic" single wall carbon nanotubes are reviewed from a theoretical point of view. The effect of the curvature-induced mini-energy gap on the phonon softening which depends on the Fermi energy and chirality of the nanotube is the main subject o…
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Phonon softening phenomena of the $Γ$ point optical modes including the longitudinal optical mode, transverse optical mode and radial breathing mode in "metallic" single wall carbon nanotubes are reviewed from a theoretical point of view. The effect of the curvature-induced mini-energy gap on the phonon softening which depends on the Fermi energy and chirality of the nanotube is the main subject of this article. We adopt an effective-mass model with a deformation-induced gauge field which provides us with a unified way to discuss the curvature effect and the electron-phonon interaction.
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Submitted 30 April, 2010;
originally announced April 2010.
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Identifying the Orientation of Edge of Graphene Using G Band Raman Spectra
Authors:
K. Sasaki,
R. Saito,
K. Wakabayashi,
T. Enoki
Abstract:
The electron-phonon matrix elements relevant to the Raman intensity and Kohn anomaly of the G band are calculated by taking into account the effect of the edge of graphene. The analysis of the pseudospin reveals that the longitudinal optical phonon mode undergoes a strong Kohn anomaly for both the armchair and zigzag edges, and that only the longitudinal (transverse) optical phonon mode is a Ram…
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The electron-phonon matrix elements relevant to the Raman intensity and Kohn anomaly of the G band are calculated by taking into account the effect of the edge of graphene. The analysis of the pseudospin reveals that the longitudinal optical phonon mode undergoes a strong Kohn anomaly for both the armchair and zigzag edges, and that only the longitudinal (transverse) optical phonon mode is a Raman active mode near the armchair (zigzag) edge. The Raman intensity is enhanced when the polarization of the incident laser light is parallel (perpendicular) to the armchair (zigzag) edge. This asymmetry between the armchair and zigzag edges is useful in identifying the orientation of the edge of graphene.
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Submitted 15 February, 2010; v1 submitted 9 November, 2009;
originally announced November 2009.