Showing 1–2 of 2 results for author: Saint-Jean, M

Single File Diffusion of particles with long ranged interactions: damping and finite size effects

Authors: Jean-Baptiste Delfau, Christophe Coste, Michel Saint-Jean

Abstract: We study the Single File Diffusion (SFD) of a cyclic chain of particles that cannot cross each other, in a thermal bath, with long ranged interactions, and arbitrary damping. We present simulations that exhibit new behaviors specifically associated to systems of small number of particles and to small damping. In order to understand those results, we present an original analysis based on the decomp… ▽ More We study the Single File Diffusion (SFD) of a cyclic chain of particles that cannot cross each other, in a thermal bath, with long ranged interactions, and arbitrary damping. We present simulations that exhibit new behaviors specifically associated to systems of small number of particles and to small damping. In order to understand those results, we present an original analysis based on the decomposition of the particles motion in the normal modes of the chain. Our model explains all dynamic regimes observed in our simulations, and provides convincing estimates of the crossover times between those regimes. △ Less

Submitted 18 March, 2011; originally announced March 2011.

Comments: 30 pages, 9 figures

Dispersive charge transport along the surface of an insulating layer observed by Electrostatic Force Microscopy

Authors: J. S. Lambert, G. De Loubens, C. Guthmann, M. Saint-Jean, T. Melin

Abstract: We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic Force Microscope. During the time range accessible to our measurements (i.e. $t=1\sim1000\un{s}$), the transport of electrons is mediated by traps in the oxid… ▽ More We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic Force Microscope. During the time range accessible to our measurements (i.e. $t=1\sim1000\un{s}$), the transport of electrons is mediated by traps in the oxide. We measure the mobility of electrons in the "surface" states of the silicon oxide layer and show the dispersive nature of their motion. It is also demonstrated that the saturation of deep oxide traps strongly enhance the transport of electrons under lateral electric field. △ Less

Submitted 18 December, 2003; originally announced December 2003.

Comments: submitted to EPL