Showing 1–50 of 107 results for author: Sahoo, S

Rashba-induced spin Hall response in a disordered $WTe_2$ four-terminal structure

Authors: Swastik Sahoo, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: The paramount acumen for controlling spin transport properties in nonmagnetic materials is the usage of spin-orbit coupling (SOC). We propose a model to calculate the spin hall angle (SHA) for the elemental transition metal dichalcogenide compound, $WTe_2$ entrenched on the intrinsic Rashba SOC. This model, is based on the Landauer-Buttiker formalism for quantum transport, and the $4$-terminal dev… ▽ More The paramount acumen for controlling spin transport properties in nonmagnetic materials is the usage of spin-orbit coupling (SOC). We propose a model to calculate the spin hall angle (SHA) for the elemental transition metal dichalcogenide compound, $WTe_2$ entrenched on the intrinsic Rashba SOC. This model, is based on the Landauer-Buttiker formalism for quantum transport, and the $4$-terminal device setup with the presence of disorder from random onsite potential fluctuations. The SHA, including the mean and RMS values, also illustrate the mesoscopic oscillations, and the values obtained are $25\%$ and $30\%$, respectively. The variation pattern of charge and spin current, along with the mean and spin Hall conductance, can be a comparative measure for other TMDs and monolayer Xenes. To validate our outcomes, we compare our results with experimental data and numerically extract real-space simulation results based on the nearest-neighbor tight binding (NNTB) model. Also our results are in line with the scaling theory of localization. This work sets the stage to calculate the spin Hall angle and spin Hall conductivity for other elemental monolayer Xenes and TMDs, considering the intrinsic scattering mechanisms. An extension of this work will be to explore the possible spintronics applications for extrinsic scattering, including side-jump and skew-jump scattering processes. △ Less

Submitted 2 July, 2025; originally announced July 2025.

Comments: 11 pages, 6 figures, 2 page supplementary

Subsystem localization

Authors: Arpita Goswami, Pallabi Chatterjee, Ranjan Modak, Shaon Sahoo

Abstract: We consider a ladder system where one leg, referred to as the ``bath", is governed by an Aubry-André (AA) type Hamiltonian, while the other leg, termed the ``subsystem", follows a standard tight-binding Hamiltonian. We investigate the localization properties in the subsystem induced by its coupling to the bath. For the coupling strength larger than a critical value ($t'>t'_c$), the analysis of the… ▽ More We consider a ladder system where one leg, referred to as the ``bath", is governed by an Aubry-André (AA) type Hamiltonian, while the other leg, termed the ``subsystem", follows a standard tight-binding Hamiltonian. We investigate the localization properties in the subsystem induced by its coupling to the bath. For the coupling strength larger than a critical value ($t'>t'_c$), the analysis of the static properties show that there are three distinct phases as the AA potential strength $V$ is varied: a fully delocalized phase at low $V$, a localized phase at intermediate $V$, and a weakly delocalized (fractal) phase at large $V$. An analysis of the wavepacket dynamics shows that the delocalized phase exhibits a ballistic behavior, whereas the weakly delocalized phase is subdiffusive. Interestingly, we also find a superdiffusive narrow crossover regime along the line separating the delocalized and localized phases. When $t'<t'_c$, the intermediate localized phase disappears, and we find a delocalized (ballistic) phase at low $V$ and a weakly delocalized (subdiffusive) phase at large $V$. Between those two phases, there is also a crossover regime where the system can be super- or subdiffusive. Finally, in some limiting scenario, we also establish a mapping between our ladder system and a well-studied one-dimensional generalized Aubry-André (GAA) model. △ Less

Submitted 6 June, 2025; v1 submitted 23 May, 2025; originally announced May 2025.

Comments: 12 pages, 17 figures

Unexpected collapse of edge reconstruction in compressible Quantum Hall fluid within filling fraction range 2/3 to 1

Authors: Suvankar Purkait, Tanmay Maiti, Pooja Agarwal, Suparna Sahoo, Giorgio Biasiol, Lucia Sorba, Biswajit Karmakar

Abstract: The edge structure of a gate-defined compressible quantum Hall fluids in the filling fraction range 2/3 to 1 is studied using the three reconstructed $e^2/3h$ fractional edge modes of unity filling integer quantum Hall state. We find that the individually excited partially resolved $e^2/3h$ edge modes of the bulk state equilibrate completely even at higher magnetic field when passing through the g… ▽ More The edge structure of a gate-defined compressible quantum Hall fluids in the filling fraction range 2/3 to 1 is studied using the three reconstructed $e^2/3h$ fractional edge modes of unity filling integer quantum Hall state. We find that the individually excited partially resolved $e^2/3h$ edge modes of the bulk state equilibrate completely even at higher magnetic field when passing through the gate defined compressible fluid with filling between 2/3 and 1. This result is unexpected because edge reconstruction at the smooth boundary is generally expected due to dominant incompressibility at filling 2/3 and 1/3. Recently such reconstructed edge mode has been reported for the compressible fluid in the filling fraction range 1/3 to 2/3. In contrary, equilibration of fractional edge modes in the compressible fluid within the filling fraction range 2/3 to 1 becomes faster with increasing magnetic field. This anomalous results will stimulate further investigations on edge structure in these complex many body systems. △ Less

Submitted 28 March, 2025; originally announced March 2025.

Comments: 7 pages, 4 figures

Enhancement of spin Hall angle by an order of magnitude via Cu intercalation in MoS2/CoFeB heterostructures

Authors: Abhisek Mishra, Pritam Das, Rupalipriyadarsini Chhatoi, Soubhagya Dash, Shubhransu Sahoo, Kshitij Singh Rathore, Pil-Ryung Cha, Seung-Cheol Lee, Satadeep Bhattacharjee, Subhankar Bedanta

Abstract: Transition metal dichalcogenides (TMDs) are a novel class of quantum materials with significant potential in spintronics, optoelectronics, valleytronics, and opto-valleytronics. TMDs exhibit strong spin-orbit coupling, enabling efficient spin-charge interconversion, which makes them ideal candidates for spin-orbit torque-driven spintronic devices. In this study, we investigated the spin-to-charge… ▽ More Transition metal dichalcogenides (TMDs) are a novel class of quantum materials with significant potential in spintronics, optoelectronics, valleytronics, and opto-valleytronics. TMDs exhibit strong spin-orbit coupling, enabling efficient spin-charge interconversion, which makes them ideal candidates for spin-orbit torque-driven spintronic devices. In this study, we investigated the spin-to-charge conversion through ferromagnetic resonance in MoS2/Cu/CoFeB heterostructures with varying Cu spacer thicknesses. The conversion efficiency, quantified by the spin Hall angle, was enhanced by an order of magnitude due to Cu intercalation. Magneto-optic Kerr effect microscopy confirmed that Cu did not significantly modify the magnetic domains, indicating its effectiveness in decoupling MoS2 from CoFeB. This decoupling preserves the spin-orbit coupling (SOC) of MoS2 by mitigating the exchange interaction with CoFeB, as proximity to localized magnetization can alter the electronic structure and SOC. First-principles calculations revealed that Cu intercalation notably enhances the spin Berry curvature and spin Hall conductivity, contributing to the increased spin Hall angle. This study demonstrates that interface engineering of ferromagnet/TMD-based heterostructures can achieve higher spin-to-charge conversion efficiencies, paving the way for advancements in spintronic applications. △ Less

Submitted 26 December, 2024; v1 submitted 27 November, 2024; originally announced November 2024.

Edge reconstruction of compressible Quantum Hall fluid in the filling fraction range 1/3 to 2/3

Authors: Suvankar Purkait, Tanmay Maiti, Pooja Agarwal, Suparna Sahoo, Sreejith G. J., Sourin Das, Giorgio Biasiol, Lucia Sorba, Biswajit Karmakar

Abstract: Edge reconstruction of gate-tunable compressible quantum Hall fluids in the filling fraction range 1/3 to 2/3 is studied by measuring transmitted conductance of two individually excited fractional $e^2/3h$ edge modes of bulk 2/3 fractional quantum Hall fluid. Our findings reveal that the measured transmitted conductance deviates from the fully equilibrated value for the filling fraction range 1/3… ▽ More Edge reconstruction of gate-tunable compressible quantum Hall fluids in the filling fraction range 1/3 to 2/3 is studied by measuring transmitted conductance of two individually excited fractional $e^2/3h$ edge modes of bulk 2/3 fractional quantum Hall fluid. Our findings reveal that the measured transmitted conductance deviates from the fully equilibrated value for the filling fraction range 1/3 to 2/3 of the gate-tunable compressible quantum Hall fluids at higher magnetic fields. This observation suggests that at the boundary of the compressible fluid a reconstructed $e^2/3h$ fractional edge mode is present and the mode does not completely equilibrate with the inner dissipative bulk region. Consequently, this outer reconstructed edge mode supports adiabatic charge transport, allowing non-equilibrated current transport through the compressible region. These studies open new avenues for achieving robust fractional edge modes even in compressible quantum Hall fluids under strong magnetic fields, enhancing our understanding of edge state dynamics in these complex systems. △ Less

Submitted 11 November, 2024; originally announced November 2024.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 110, 245309 (2024)

Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures

Authors: Baisali Kundu, Poulomi Chakrabarty, Avijit Dhara, Roberto Rosati, Chandan Samanta, Suman K. Chakraborty, Srilagna Sahoo, Sajal Dhara, Saroj P. Dash, Ermin Malic, Saurabh Lodha, Prasana K. Sahoo

Abstract: Multimodal device operations are essential to advancing the integration of 2D semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and transport, is crucial for finetuning the functionality of optoelectronic devices based on 2D semiconductor heterostructure. However, the traditional exciton engineering… ▽ More Multimodal device operations are essential to advancing the integration of 2D semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and transport, is crucial for finetuning the functionality of optoelectronic devices based on 2D semiconductor heterostructure. However, the traditional exciton engineering methods in 2D semiconductors are mainly restricted to the artificially assembled vertical pn heterostructures with electrical or strain induced confinements. In this study, we utilized bilayer 2D lateral npn multijunction heterostructures with intrinsically spatially separated energy landscapes to achieve preferential exciton generation and manipulation without external confinement. In lateral npn FET geometry, we uncover unique and nontrivial properties, including dynamic tuning of channel photoresponsivity from positive to negative. The multimodal operation of these 2D FETs is achieved by carefully adjusting electrical bias and the impinging photon energy, enabling precise control over the trions generation and transport. Cryogenic photoluminescence measurement revealed the presence of trions in bilayer MoSe2 and intrinsic trap states in WSe2. Measurements in different FET device geometries show the multifunctionality of 2D lateral heterostructure phototransistors for efficient tuning and electrical manipulation of excitonic characteristics. Our findings pave the way for developing practical exciton-based transistors, sensors, multimodal optoelectronic and quantum technologies △ Less

Submitted 2 November, 2024; originally announced November 2024.

Interplay between superconducting fluctuations and weak localization in disordered TiN thin films

Authors: Sachin Yadav, Bikash Gajar, R. P. Aloysius, Sangeeta Sahoo

Abstract: The interplay between superconducting fluctuations (SFs) and weak localization (WL) has been probed by temperature dependent resistance [R(T)] and magnetoresistance (MR) measurements in two-dimensional disordered superconducting TiN thin films. Within a narrow band of temperature above the transition temperature Tc, the coexistence of SFs-mediated positive MR and WL-led negative MR in different ra… ▽ More The interplay between superconducting fluctuations (SFs) and weak localization (WL) has been probed by temperature dependent resistance [R(T)] and magnetoresistance (MR) measurements in two-dimensional disordered superconducting TiN thin films. Within a narrow band of temperature above the transition temperature Tc, the coexistence of SFs-mediated positive MR and WL-led negative MR in different range of magnetic field, as well as a crossover from positive to negative MR with increasing temperature are reported here. The crossover temperature coincides with a characteristic temperature (Tmax) at which a resistance peak appears in the zero-field R(T). The resistance peak and the associated magnetoresistance anomalies are addressed by using the quantum corrections to the conductivity (QCC) theory. We show that WL can be accounted for the observed negative MR. By introducing individual coefficients to both SFs and WL contributions, the dominance of one over the other is monitored with respect to temperature. It is observed that just above the Tc, SF dominates and with increasing temperature, the contributions from the both become comparable and finally, at Tmax, WL takes over completely. The presented approach may be adopted to compare various quantum contributions in two-dimensional superconductors particularly in the regime where both SFs and WL are pronounced. △ Less

Submitted 8 October, 2024; originally announced October 2024.

Comments: 5 figures and 34 pages in the main manuscript

Journal ref: Nanoscale, 2024

Phase transitions in $q$-state clock model

Authors: Arpita Goswami, Ravi Kumar, Monikana Gope, Shaon Sahoo

Abstract: The $q-$state clock model, sometimes called the discrete $XY$ model, is known to show a second-order (symmetry breaking) phase transition in two-dimension (2D) for $q\le 4$ ($q=2$ corresponds to the Ising model). On the other hand, the $q\to\infty$ limit of the model corresponds to the $XY$ model, which shows the infinite order (non-symmetry breaking) Berezinskii-Kosterlitz-Thouless (BKT) phase tr… ▽ More The $q-$state clock model, sometimes called the discrete $XY$ model, is known to show a second-order (symmetry breaking) phase transition in two-dimension (2D) for $q\le 4$ ($q=2$ corresponds to the Ising model). On the other hand, the $q\to\infty$ limit of the model corresponds to the $XY$ model, which shows the infinite order (non-symmetry breaking) Berezinskii-Kosterlitz-Thouless (BKT) phase transition in 2D. Interestingly, the 2D clock model with $q\ge 5$ is predicted to show three different phases and two associated phase transitions. There are varying opinions about the actual characters of phases and the associated transitions. In this work, we develop the basic and higher-order mean-field (MF) theories to study the $q$-state clock model systematically. Our MF calculations reaffirm that, for large $q$, there are three phases: (broken) $\mathbb{Z}_q$ symmetric ferromagnetic phase at the low temperature, emergent $U(1)$ symmetric BKT phase at the intermediate temperature, and paramagnetic (disordered) phase at the high temperature. The phase transition at the higher temperature is found to be of the BKT type, and the other transition at the lower temperature is argued to be a large-order spontaneous symmetry-breaking (SSB) type (the largeness of transition order yields the possibility of having some of the numerical characteristics of a BKT transition). The higher-order MF theory developed here better characterizes phases by estimating the spin-spin correlation between two neighbors. △ Less

Submitted 24 June, 2025; v1 submitted 7 July, 2024; originally announced July 2024.

Comments: 17 pages, 9 figures; final version

Journal ref: Phys. Rev. E 111, 054125 (2025)

Emergence of quantum Griffiths singularity in disordered TiN thin films

Authors: Sachin Yadav, M. P. Saravanan, Sangeeta Sahoo

Abstract: The association of quantum Griffiths singularity (QGS) to the magnetic-field-induced superconductor-metal transition predicts the unconventional diverging behaviour of dynamical critical exponent in low disorder crystalline two-dimensional superconductors. But whether this state exists in the superconducting systems exhibiting superconductor-insulator transition remains elusive. Here, we report th… ▽ More The association of quantum Griffiths singularity (QGS) to the magnetic-field-induced superconductor-metal transition predicts the unconventional diverging behaviour of dynamical critical exponent in low disorder crystalline two-dimensional superconductors. But whether this state exists in the superconducting systems exhibiting superconductor-insulator transition remains elusive. Here, we report the emergence of quantum Griffiths singularity in ultrathin disordered TiN thin films with more than two orders of magnitude variation in their normal state resistance. For both superconductor-metal transition and superconductor-insulator transition types, a diverging critical exponent is observed while approaching the quantum phase transition. Further, the magnetoresistance isotherms obey a direct activated scaling governed by an infinite-randomness fixed critical point. Finally, this work establishes the robustness of the QGS phenomenon towards a wide range of temperature and also towards a wide range of disorder strength as correlated with the normal state resistance. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Comments: Accepted for publication in Communications Physics

Journal ref: Communications Physics, 2024

All solution grown epitaxial magnonic crystal of thulium iron garnet thin film

Authors: Rajnandini Sharma, Pawan Kumar Ojha, Simran Sahoo, Rijul Roychowdhury, Shrawan Kumar Mishra

Abstract: Magnonics has shown the immense potential of compatibility with CMOS devices and the ability to be utilized in futuristic quantum computing. Therefore, the magnonic crystals, both metallic and insulating, are under extensive exploration. The presence of high spin-orbit interaction induced by the presence of rare-earth elements in thulium iron garnet (TmIG) increases its potential in magnonic appli… ▽ More Magnonics has shown the immense potential of compatibility with CMOS devices and the ability to be utilized in futuristic quantum computing. Therefore, the magnonic crystals, both metallic and insulating, are under extensive exploration. The presence of high spin-orbit interaction induced by the presence of rare-earth elements in thulium iron garnet (TmIG) increases its potential in magnonic applications. Previously, TmIG thin films were grown using ultra-high vacuum-based techniques. Here, we present a cost-effective solution-based approach that enables the excellent quality interface and surface roughness of the epitaxial TmIG/GGG. The deposited TmIG (12.2 nm) thin film's physical and spin dynamic properties are investigated in detail. The confirmation of the epitaxy using X-ray diffraction in $φ$-scan geometry along with the X-ray reflectivity and atomic force for the thickness and roughness analysis and topography, respectively. The epitaxial TmIG/GGG have confirmed the perpendicular magnetic anisotropy utilizing the polar-magneto-optic Kerr effect. Analyzing the ferromagnetic resonance study of TmIG/GGG thin films provides the anisotropy constant K$_U$ = 20.6$\times$10$^3$ $\pm$ 0.2$\times$10$^3$ N/m$^2$ and the Gilbert damping parameter $α$ = 0.0216 $\pm$ 0.0028. The experimental findings suggest that the solution-processed TmIG/GGG thin films have the potential to be utilized in device applications. △ Less

Submitted 26 December, 2023; originally announced December 2023.

Evaporation of Colloidal Suspension Droplets over Oil-infused Slippery Surfaces

Authors: Sumita Sahoo, Rabibrata Mukherjee

Abstract: Evaporative drying of colloidal droplets with different concentrations (Ci) on liquid infused slippery substrate (LISS) surfaces fabricated over biomimetically patterned sticky hydrophobic surfaces is reported here. These slippery surfaces remain stable under the aqueous droplets. The effective thickness of the infused oil layer (hE) was varied and its effect on the evaporation dynamics, wetting r… ▽ More Evaporative drying of colloidal droplets with different concentrations (Ci) on liquid infused slippery substrate (LISS) surfaces fabricated over biomimetically patterned sticky hydrophobic surfaces is reported here. These slippery surfaces remain stable under the aqueous droplets. The effective thickness of the infused oil layer (hE) was varied and its effect on the evaporation dynamics, wetting ridge formation and the final deposition pattern were studied using an optical microscope as well as a contact angle goniometer. The results were contrasted to those obtained over bare (oil-free) flat and patterned sticky surfaces. Unlike strong pinning and consequent peripheral ring deposit invariably observed in evaporation of a colloidal droplet over a solid surface (i.e. bare flat Sylgard 184 without oil), over a LISS, the dynamics, including the extent of pinning and the final deposit morphology, were found to be strongly dependant on hE. Due to the presence of the underlying patterns, the extent of pinning increased with a reduction in hE. Prolonged evaporation over a LISS leads to a uniform deposition due to gravity-induced settling of the colloids followed by capillarity-mediated rearrangement of the particles. Colloidal assembly at the droplet free surface and the droplet-wetting ridge interface leads to a thinner encapsulating oil layer and faster drainage of the wetting ridge resulting in a higher evaporation rate before pinning of the suspension droplets over all LISS surfaces. △ Less

Submitted 24 November, 2023; originally announced November 2023.

A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances

Authors: Sameer Kumar Mallik, Roshan Padhan, Suman Roy, Mousam Charan Sahu, Sandhyarani Sahoo, Satyaprakash Sahoo

Abstract: Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent requirement for the etching-free, and clean transfer that retain original semiconducting properties of layered channel materials. In parallel, transfer of metal electrode… ▽ More Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent requirement for the etching-free, and clean transfer that retain original semiconducting properties of layered channel materials. In parallel, transfer of metal electrode arrays on the 2D semiconductors also attract attention towards large-scale integration for commercial applications. Here, we demonstrate a facile PMMA-assisted etching-free one-step approach to transfer both 2D channels and metal electrodes without damaging the contact region. The direct device transfer (DDT) technique enables residue-free monolayer MoS2 as channel material towards achieving doping-free intrinsic transistors with enhanced performances. The crystalline quality, strain relaxation, and interfacial coupling effects are studied using Raman and photoluminescence spectra with spatial mapping. Post device transfer, a reduced pinning effect is observed by the effective modulation of gate tunable drain currents in MoS2 transistors at room temperature. Furthermore, the extracted Schottky barrier heights, temperature dependence of threshold voltage shifts, hysteresis evolution, and mobility enhancements validates the improved transistor performances in transferred devices. The proposed DDT method can be utilized to directly transfer array of devices of 2D materials and heterostructures skipping various cumbersome steps in between and hence could offer high performance reliable electronic applications. △ Less

Submitted 15 September, 2023; originally announced September 2023.

Determination of Thermal Conductivity of phase pure 10H-SiC Thin Films by non-destructive Raman Thermometry

Authors: Madhusmita Sahoo, Kalyan Ghosh, Swayamprakash Sahoo, Pratap K. Sahoo, Tom Mathews, Sandip Dhara

Abstract: 10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device fabrication. Micro-Raman method serves as an important tool in this aspect and is known as Raman Thermometry. It utilises a steady-state heat transfer model in a semi-i… ▽ More 10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device fabrication. Micro-Raman method serves as an important tool in this aspect and is known as Raman Thermometry. It utilises a steady-state heat transfer model in a semi-infinite half space and provides for an effective technique to measure thermal conductivity of films as a function of film thickness and laser spot size. This method has two limiting conditions i.e. thick film limit and thin film limit. The limiting conditions of this model was explored by simulating the model for different film thicknesses at constant laser spot size. 10H SiC films of three different thicknesses i.e. 104, 135 and 156 nm were chosen to validate the thin film limiting condition. It was found that the ideal thickness at which this method can be utilised for calculating thermal conductivity is 156 nm. Thermal conductivity of 156 nm film is found to be 102.385 $(Wm^{-1}K^{-1})$. △ Less

Submitted 10 August, 2023; originally announced August 2023.

Self-consistent convolutional density functional approximations: Application to adsorption at metal surfaces

Authors: Sushree Jagriti Sahoo, Qimen Xu, Xiangyun Lei, Daniel Staros, Gopal R. Iyer, Brenda Rubenstein, Phanish Suryanarayana, Andrew J. Medford

Abstract: The exchange-correlation (XC) functional in density functional theory is used to approximate multi-electron interactions. A plethora of different functionals is available, but nearly all are based on the hierarchy of inputs commonly referred to as "Jacob's ladder." This paper introduces an approach to construct XC functionals with inputs from convolutions of arbitrary kernels with the electron den… ▽ More The exchange-correlation (XC) functional in density functional theory is used to approximate multi-electron interactions. A plethora of different functionals is available, but nearly all are based on the hierarchy of inputs commonly referred to as "Jacob's ladder." This paper introduces an approach to construct XC functionals with inputs from convolutions of arbitrary kernels with the electron density, providing a route to move beyond Jacob's ladder. We derive the variational derivative of these functionals, showing consistency with the generalized gradient approximation (GGA), and provide equations for variational derivatives based on multipole features from convolutional kernels. A proof-of-concept functional, PBEq, which generalizes the PBE$α$ framework where $α$ is a spatially-resolved function of the monopole of the electron density, is presented and implemented. It allows a single functional to use different GGAs at different spatial points in a system, while obeying PBE constraints. Analysis of the results underlines the importance of error cancellation and the XC potential in data-driven functional design. After testing on small molecules, bulk metals, and surface catalysts, the results indicate that this approach is a promising route to simultaneously optimize multiple properties of interest. △ Less

Submitted 26 February, 2024; v1 submitted 9 August, 2023; originally announced August 2023.

Bismuth Phase Dependent Growth of Superconducting NiBi3 Nanorods

Authors: Laxmipriya Nanda, Bidyadhar Das, Subhashree Sahoo, Pratap K. Sahoo, Kartik Senapati

Abstract: We report a study on the growth of NiBi3 nanowires and nanorods during the preparation of superconducting NiBi3 films by co-evaporation of Ni and Bi. We find that NiBi3 films grown via co-evaporation of Ni and Bi metals achieve higher transition temperatures (4.4 K) compared even to the single crystal NiBi3. However, in certain parameter space, the film surfaces were spattered with nanoscale featu… ▽ More We report a study on the growth of NiBi3 nanowires and nanorods during the preparation of superconducting NiBi3 films by co-evaporation of Ni and Bi. We find that NiBi3 films grown via co-evaporation of Ni and Bi metals achieve higher transition temperatures (4.4 K) compared even to the single crystal NiBi3. However, in certain parameter space, the film surfaces were spattered with nanoscale features, such as nanowires and nanorods. Ambient temperature deposition resulted in polycrystalline NiBi3 nanorods which were controllable with the evaporation rate of Bi. Deposition at elevated temperatures promoted the emergence of long single crystalline NiBi3 nanorods. High resolution transmission electron microscopy measurements confirmed the crystalline behaviour of the nanorods. We believe that NiBi3 nanowires form in a process analogous to the well known vapor-liquid-solid process, as we observe an amorphous Bi cap on the nanorods. From glancing angle X-ray diffraction measurements we identify that the presence of trigonal Bi with hexagonal primitive cell in the film promotes the nucleation of nanorods. Electrical transport on a single NiBi3 nanowire shows a superconducting transition of 4.3K. △ Less

Submitted 21 June, 2023; originally announced June 2023.

Comments: 24 pages, 7+1 figures

The phase stability of large-size nanoparticle alloy catalysts at ab initio quality using a nearsighted force-training approach

Authors: Cheng Zeng, Sushree Jagriti Sahoo, Andrew J. Medford, Andrew A. Peterson

Abstract: CoPt nanoparticle catalysts are integral to commercial fuel cells. Such systems are prohibitive to fully characterize with electronic structure calculations. Machine-learned potentials offer a scalable solution; however, such potentials are only reliable if representative training data can be employed, which typically requires large electronic structure calculations. Here, we use the nearsighted-f… ▽ More CoPt nanoparticle catalysts are integral to commercial fuel cells. Such systems are prohibitive to fully characterize with electronic structure calculations. Machine-learned potentials offer a scalable solution; however, such potentials are only reliable if representative training data can be employed, which typically requires large electronic structure calculations. Here, we use the nearsighted-force training approach to make high-fidelity machine-learned predictions on large nanoparticles with $>$5,000 atoms using only systematically generated small structures ranging from 38-168 atoms. The resulting ensemble model shows good accuracy and transferability in describing relative energetics for CoPt nanoparticles with various shapes, sizes and Co compositions. It is found that the fcc(100) surface is more likely to form a L1$_0$ ordered structure than the fcc(111) surface. The energy convex hull of the icosahedron shows the most stable particles have Pt-rich skins and Co-rich underlayers. Although the truncated octahedron is the most stable shape across all sizes of Pt nanoparticles, a crossover to icosahedron exists due to a large downshift of surface energy for CoPt nanoparticle alloys. The downshift can be attributed to strain release on the icosahedron surface due to Co alloying. We introduced a simple empirical model to describe the role of Co alloying in the crossover for CoPt nanoparticles. With Monte-Carlo simulations we additionally searched for the most stable atomic arrangement for a truncated octahedron with equal Pt and Co compositions, and also we studied its order-disorder phase transition. We validated the most stable configurations with a new highly scalable density functional theory code called SPARC. Lastly, the order-disorder phase transition for a CoPt nanoparticle exhibits a lower transition temperature and a smoother transition, compared to the bulk CoPt alloy. △ Less

Submitted 4 August, 2023; v1 submitted 2 June, 2023; originally announced June 2023.

Straintronics using the monolayer-Xene platform -- a comparative study

Authors: Swastik Sahoo, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: Monolayer silicene is a front runner in the 2D-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab-initio density functional theory coupled with quantum transport based on the Landauer formalism. With a rigorous band str… ▽ More Monolayer silicene is a front runner in the 2D-Xene family, which also comprises germanene, stanene, and phosphorene, to name a few, due to its compatibility with current silicon fabrication technology. Here, we investigate the utility of 2D-Xenes for straintronics using the ab-initio density functional theory coupled with quantum transport based on the Landauer formalism. With a rigorous band structure analysis, we show the effect of strain on the K-point, and calculate the directional piezoresistances for the buckled Xenes as per their critical strain limit. Further, we compare the relevant gauge factors, and their sinusoidal dependences on the transport angle akin to silicene and graphene. The strain-insensitive transport angles corresponding to the zero gauge factors are 81 degree and 34 degree for armchair and zigzag strains, respectively, for silicene and germanene. For stanene as the strain limit is extended to 10% and notable changes in the fundamental parameters, the critical angle for stanene along armchair and zigzag directions are 69 degree and 34 degree respectively. The small values of gauge factors are attributed to their stable Dirac cones and strain-independent valley degeneracies. We also explore conductance modulation, which is quantized in nature and exhibits a similar pattern with other transport parameters against a change in strain. Based on the obtained results, we propose the buckled Xenes as an interconnect in flexible electronics and are promising candidates for various applications in straintronics. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 16 pages, 9 figures

Effect of hidden geometry and higher-order interactions on the synchronization and hysteresis behaviour of phase oscillators on 5-cliques simplicial assemblies

Authors: Samir Sahoo, Bosiljka Tadic, Malayaja Chutani, Neelima Gupte

Abstract: The hidden geometry of simplicial complexes can influence the collective dynamics of nodes in different ways depending on the simplex-based interactions of various orders and competition between local and global structural features. We study a system of phase oscillators attached to nodes of 4-dimensional simplicial complexes and interacting via positive/negative edges-based pairwise $K_1$ and tri… ▽ More The hidden geometry of simplicial complexes can influence the collective dynamics of nodes in different ways depending on the simplex-based interactions of various orders and competition between local and global structural features. We study a system of phase oscillators attached to nodes of 4-dimensional simplicial complexes and interacting via positive/negative edges-based pairwise $K_1$ and triangle-based triple $K_2\geq 0$ couplings. Three prototypal simplicial complexes are grown by aggregation of 5-cliques, controlled by the chemical affinity parameter $ν$, resulting in sparse, mixed, and compact architecture, all of which have 1-hyperbolic graphs but different spectral dimensions. By changing the interaction strength $K_1\in[-4,2]$ along the forward and backward sweeps, we numerically determine individual phases of each oscillator and a global order parameter to measure the level of synchronisation. Our results reveal how different architectures of simplicial complexes, in conjunction with the interactions and internal-frequency distributions, impact the shape of the hysteresis loop and lead to patterns of locally synchronised groups that hinder global network synchronisation. △ Less

Submitted 24 May, 2023; originally announced May 2023.

Comments: 9 pages, 7 figures; regular article, submitted

Version 2.0.0 -- SPARC: Simulation Package for Ab-initio Real-space Calculations

Authors: Boqin Zhang, Xin Jing, Qimen Xu, Shashikant Kumar, Abhiraj Sharma, Lucas Erlandson, Sushree Jagriti Sahoo, Edmond Chow, Andrew J. Medford, John E. Pask, Phanish Suryanarayana

Abstract: SPARC is an accurate, efficient, and scalable real-space electronic structure code for performing ab initio Kohn-Sham density functional theory calculations. Version 2.0.0 of the software provides increased efficiency, and includes spin-orbit coupling, dispersion interactions, and advanced semilocal as well as hybrid exchange-correlation functionals, where it outperforms state-of-the-art planewave… ▽ More SPARC is an accurate, efficient, and scalable real-space electronic structure code for performing ab initio Kohn-Sham density functional theory calculations. Version 2.0.0 of the software provides increased efficiency, and includes spin-orbit coupling, dispersion interactions, and advanced semilocal as well as hybrid exchange-correlation functionals, where it outperforms state-of-the-art planewave codes by an order of magnitude and more, with increasing advantages as the number of processors is increased. These new features further expand the range of physical applications amenable to first principles investigation. △ Less

Submitted 1 May, 2024; v1 submitted 12 May, 2023; originally announced May 2023.

Comments: 13 pages, 2 figures

Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning

Authors: Sameer Kumar Mallik, Roshan Padhan, Mousam Charan Sahu, Suman Roy, Gopal K Pradhan, Prasana Kumar Sahoo, Saroj Prasad Dash, Satyaprakash Sahoo

Abstract: The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at… ▽ More The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multi-level memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single FET device where thermal energy can be ventured to aid the memory functions with multi-level (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way for new avenues in 2D semiconductors toward reliable data processing and storage with high-packing density arrays for brain-inspired artificial learning. △ Less

Submitted 3 May, 2023; originally announced May 2023.

Journal ref: ACS Applied Materials & Interfaces 2023

Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires

Authors: Laxmipriya Nanda, Bidyadhar Das, Subhashree Sahoo, Pratap K Sahoo, Kartik Senapati

Abstract: We present results of magnetoresistance (MR) measurements in granular NiBi3 nanowires in the resistive state below the superconducting transition temperature. MR of 100 nm wide nanowires fabricated by focused Ion beam lithography from granular films of NiBi3 with and without magnetic Ni impurity were compared. The nanowire containing high concentration of Ni impurity showed oscillations in MR and… ▽ More We present results of magnetoresistance (MR) measurements in granular NiBi3 nanowires in the resistive state below the superconducting transition temperature. MR of 100 nm wide nanowires fabricated by focused Ion beam lithography from granular films of NiBi3 with and without magnetic Ni impurity were compared. The nanowire containing high concentration of Ni impurity showed oscillations in MR and also exhibited a negative MR in certain temperature and field range. None of these effects were observed in the nanowire with no Ni impurities. Therefore, we argue that this effect is a result of the random Josephson couplings realized across superconducting NiBi3 grains via magnetic inter grain regions. Such random couplings can cause local fluctuations in the density and sign of supercurrent, which can lead to negative MR and oscillations in MR, as proposed by Kivelson & Spivak [Kivelson et al. Phy. Rev. B. 45, 10490 (1992)]. △ Less

Submitted 1 May, 2023; originally announced May 2023.

Comments: 16 pages, 4+3 figures

Magnetic plateaus and jumps in a spin-1/2 ladder with alternate Ising-Heisenberg rungs: a field dependent study

Authors: Sk Saniur Rahaman, Manoranjan Kumar, Shaon Sahoo

Abstract: We study a frustrated two-leg spin-1/2 ladder with alternate Ising and isotropic Heisenberg rung exchange interactions, whereas, interactions along legs and diagonals are Ising type. The ground-state (GS) of this model has four exotic phases: (i) the stripe rung ferromagnet (SRFM), (ii) the anisotropic anti-ferromagnet (AAFM), (iii) the Dimer, and (iv) the stripe leg ferromagnet (SLFM) in absence… ▽ More We study a frustrated two-leg spin-1/2 ladder with alternate Ising and isotropic Heisenberg rung exchange interactions, whereas, interactions along legs and diagonals are Ising type. The ground-state (GS) of this model has four exotic phases: (i) the stripe rung ferromagnet (SRFM), (ii) the anisotropic anti-ferromagnet (AAFM), (iii) the Dimer, and (iv) the stripe leg ferromagnet (SLFM) in absence of any external magnetic field. In this work, we study the effect of externally applied longitudinal and transverse fields on GS phases and note that there are two plateaus with per-site magnetization $1/4$ and $1/2$. There is another plateau at zero magnetization due to a finite spin gap in the presence of a longitudinal field. The exact diagonalization (ED) and the transfer matrix (TM) methods are used to solve the model Hamiltonian and the mechanism of plateau formation is analyzed using spin density, quantum fidelity, and quantum concurrence. In the (i) SRFM phase, Ising exchanges are dominant for all spins but the Heisenberg rungs are weak, and therefore, the magnetization shows a continuous transition as a function of the transverse field. In the other three phases [(ii)-(iv)], the Ising dimer rungs are weak and those are broken first to reach a plateau with per-site magnetization $1/4$, having a large gap which is closed by further application of the transverse field. △ Less

Submitted 19 June, 2024; v1 submitted 24 April, 2023; originally announced April 2023.

Comments: 15 pages, 9 figures

Journal ref: physica status solidi (b), 2500027 (2025)

Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films

Authors: Sachin Yadav, Vinay Kaushik, M. P. Saravanan, Sangeeta Sahoo

Abstract: Here, we demonstrate an interplay between superconducting fluctuations and electron-electron interaction (EEI) by low temperature magnetotransport measurements for a set of 2D disordered TiN thin films. While cooling down the sample, a characteristic temperature T* is obtained from the R(T) at which superconducting fluctuations start to appear. The upturn in R(T) above T* corresponds to weak local… ▽ More Here, we demonstrate an interplay between superconducting fluctuations and electron-electron interaction (EEI) by low temperature magnetotransport measurements for a set of 2D disordered TiN thin films. While cooling down the sample, a characteristic temperature T* is obtained from the R(T) at which superconducting fluctuations start to appear. The upturn in R(T) above T* corresponds to weak localization (WL) and/or EEI. By the temperature and field dependences of the observed resistance, we show that the upturn in R(T) originates mainly from EEI with a negligible contribution from WL. Further, we have used the modified Larkins electron-electron attraction strength beta(T/Tc), containing a field induced pair breaking parameter, in the Maki-Thompson (MT) superconducting fluctuation term. Here, the temperature dependence of the beta(T/Tc) obtained from the magnetoresistance analysis shows a diverging behavior close to Tc and it remains almost constant at higher temperature within the limit of ln(T/Tc) < 1. Interestingly, the variation of beta(T/Tc) on the reduced temperature (T/Tc) offers a common trend which has been closely followed by all the concerned samples presented in this study. Finally, the temperature dependence of inverse phase scattering time , as obtained from the magnetoresistance analysis, clearly shows two different regimes; the first one close to Tc follows the Ginzburg-Landau relaxation rate , whereas, the second one at high temperature varies almost linearly with temperature indicating the dominance of inelastic electron-electron scattering for the dephasing mechanism. These two regimes are followed in a generic way by all the samples in spite of being grown under different growth conditions. △ Less

Submitted 18 January, 2023; originally announced January 2023.

Comments: 7 Figures and 7 Figures in Supplemental Material; Accepted for publication Phys. Rev. B

Journal ref: Phys. Rev. B 107, 014511 (2023)

Hybrid quantum nanophotonic devices with color centers in nanodiamonds

Authors: Swetapadma Sahoo, Valery Davydov, Viatcheslav Agafonov, Simeon I. Bogdanov

Abstract: Optically active color centers in nanodiamonds offer unique opportunities for generating and manipulating quantum states of light. These mechanically, chemically, and optically robust emitters can be produced in mass quantities, deterministically manipulated, and integrated with a variety of quantum device geometries and photonic material platforms. Nanodiamonds with deeply sub-wavelength sizes co… ▽ More Optically active color centers in nanodiamonds offer unique opportunities for generating and manipulating quantum states of light. These mechanically, chemically, and optically robust emitters can be produced in mass quantities, deterministically manipulated, and integrated with a variety of quantum device geometries and photonic material platforms. Nanodiamonds with deeply sub-wavelength sizes coupled to nanophotonic structures feature a giant enhancement of light-matter interaction, promising high bitrates in quantum photonic systems. We review the recent advances in controlled techniques for synthesizing, selecting, and manipulating nanodiamond-based color centers for their integration with quantum nanophotonic devices. △ Less

Submitted 4 August, 2022; v1 submitted 25 July, 2022; originally announced July 2022.

Comments: 27 pages, 7 figures

Strain and electric field control of magnetic and electrical transport properties in a magneto-elastically coupled Fe3O4/BaTiO3(001) heterostructure

Authors: Gyanendra Panchal, Danny Kojda, Sophia Sahoo, Anita Bagri, Hemant Singh Kunwar, Lars Bocklage, Anjali Panchwanee, Vasant G. Sathe, Katharina Fritsch, Klaus Habicht, Ram Janay Choudhary, Deodutta M. Phase

Abstract: We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3 heterostructure, the Fe3O4 thin film is epitaxially grown in the form of bilateral domains, analogous to a-c stripe domains of the underlying BaTiO3(001) substrate. By in-si… ▽ More We present a study of the control of electric field induced strain on the magnetic and electrical transport properties in a magneto-elastically coupled artificial multiferroic Fe3O4/BaTiO3 heterostructure. In this Fe3O4/BaTiO3 heterostructure, the Fe3O4 thin film is epitaxially grown in the form of bilateral domains, analogous to a-c stripe domains of the underlying BaTiO3(001) substrate. By in-situ electric field dependent magnetization measurements, we demonstrate the extrinsic control of the magnetic anisotropy and the characteristic Verwey metal-insulator transition of the epitaxial Fe3O4 thin film in a wide temperature range between 20-300 K, via strain mediated converse magnetoelectric coupling. In addition, we observe strain induced modulations in the magnetic and electrical transport properties of the Fe3O4 thin film across the thermally driven intrinsic ferroelectric and structural phase transitions of the BaTiO3 substrate. In-situ electric field dependent Raman measurements reveal that the electric field does not significantly modify the anti-phase boundary defects in the Fe3O4 thin film once it is thermodynamically stable after deposition and that the modification of the magnetic properties is mainly caused by strain induced lattice distortions and magnetic anisotropy. These results provide a framework to realize electrical control of the magnetization in a classical highly correlated transition metal oxide. △ Less

Submitted 17 June, 2022; originally announced June 2022.

Comments: 11 pages, 5 figures

Charge density wave and superconductivity in 6R-TaS2

Authors: Sudip Pal, Prakash Bahera, S. R. Sahoo, Himanshu Srivastava, A. K. Srivastava, N. P. Lalla, Raman Sankar, A. Banerjee, S. B. Roy

Abstract: The layered transition metal dichalcogenide compounds 1T-TaS2 and 4H-TaS2 are well known for their exotic properties, which include charge density wave, superconductivity, Mott transition, etc., and lately quantum spin liquid. Here, we report the magnetic, transport and transmission electron microscopy study of the charge density wave and superconductivity in 6R-TaS2 which is a relatively less stu… ▽ More The layered transition metal dichalcogenide compounds 1T-TaS2 and 4H-TaS2 are well known for their exotic properties, which include charge density wave, superconductivity, Mott transition, etc., and lately quantum spin liquid. Here, we report the magnetic, transport and transmission electron microscopy study of the charge density wave and superconductivity in 6R-TaS2 which is a relatively less studied polymorph of this dichalcogenide TaS2. Our high temperature electron microscopy reveals multiple charge density wave transitions between room temperature and 650K. Magnetization, and the electrical resistivity measurements in the temperature range of 2-400 K reveal that 6R-TaS2 undergoes a charge density wave transition around 305 K and is followed by a transition to a superconducting state around 3.5 K. The low temperature specific heat measurement exhibits anomaly associated with the superconducting transition around 2.4 K. The estimated Ginzburg Landau parameter suggests that this compound lies at the extreme limit of type-II superconductivity. △ Less

Submitted 28 August, 2023; v1 submitted 1 June, 2022; originally announced June 2022.

Silicene for flexible electronics

Authors: Swastik Sahoo, Abhinaba Sinha, Namitha Anna Koshi, Seung-Cheol Lee, Satadeep Bhattacharjee, Bhaskaran Muralidharan

Abstract: The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices a… ▽ More The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoretical model derived from the integration of \textit{ab-initio} density-functional theory and quantum transport theory, we investigate the piezoresistance effect of silicene in the nanoscale regime. Like graphene, we obtain a small value of piezoresistance gauge factor of silicene, which is sinusoidally dependent on the transport angle. The small gauge factor of silicene is attributed to its robust Dirac cone and strain-independent valley degeneracy. Based on the obtained results, we propose to use silicene as an interconnect in flexible electronic devices and a reference piezoresistor in strain sensors. This work will hence pave the way for exploring flexible electronics applications in other 2D-Xene materials. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: 8 pages, 23 figures

Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS$_2$ Heterostructure

Authors: Himani Jawa, Sayantan Ghosh, Abin Varghese, Srilagna Sahoo, Saurabh Lodha

Abstract: Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well that can enable broadband photodetection besides multi-level optoelectronic logic and memory. Controllable and reversible switching between PPC and NPC is a ke… ▽ More Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well that can enable broadband photodetection besides multi-level optoelectronic logic and memory. Controllable and reversible switching between PPC and NPC is a key requirement for these applications. This report demonstrates visible-to-near infrared wavelength-driven NPC and PPC, along with reversible switching between the two, in an air stable, high mobility, broadband black phosphorus (BP) field effect transistor (FET) covered with a few layer MoS$_2$ flake. The crossover switching wavelength can be tuned by varying the MoS$_2$ bandgap through its flake thickness and the NPC and PPC photoresponsivities can be modulated using electrostatic gating as well as laser power. Recombination-driven NPC and PPC allows for reversible switching at reasonable time scales of a few seconds. Further, gate voltage-dependent negative persistent photoconductance enables synaptic behavior that is well-suited for optosynaptic applications. △ Less

Submitted 1 November, 2021; originally announced November 2021.

Comments: Main Manuscript and Supporting Information

Accessing Phase Slip Events in Nb Meander Wires

Authors: Deepika Sawle, Sudhir Husale, Sachin Yadav, Bikash Gajar, V. P. S. Awana, Sangeeta Sahoo

Abstract: We report transport studies through Nb-based superconducting meander wires fabricated by focused ion beam (FIB) milling technique. The effect of meandering on quantum transport has been probed experimentally by a direct comparison with the pristine thin-film device before meandering. The normal metal (NM) to superconductor (SC) phase transition becomes a wide and multi-step transition by meanderin… ▽ More We report transport studies through Nb-based superconducting meander wires fabricated by focused ion beam (FIB) milling technique. The effect of meandering on quantum transport has been probed experimentally by a direct comparison with the pristine thin-film device before meandering. The normal metal (NM) to superconductor (SC) phase transition becomes a wide and multi-step transition by meandering. Below the transition temperature (Tc), the resistance-versus-temperature measurements reveal resistive tailing which is explained by the thermally activated phase slip (TAPS) mechanism. The TAPS fit indicates a selective region of the meander to be responsible for the resistive tailing. Besides, the phase slip (PS) mechanism in the meander is evident in its current-voltage characteristics that feature the stair-case type intermediate resistive steps during the SC-NM transition. The modulation of the intermediate resistive steps is investigated with respect to temperature and external magnetic field. It is observed that the PS events are facilitated by magnetic fields up to about 250 mT. Further, the critical current varies strongly on the temperature and magnetic field for T less than 0.5Tc and H less tahn 100 mT where it fluctuates in an oscillatory manner. Finally, Nb based meander structures can be promising candidates for future PS based studies and applications. △ Less

Submitted 22 October, 2021; originally announced October 2021.

Comments: Accepted for publication in Superconductor Science and Technology

Journal ref: SUST, 2021

Ab-initio investigation of finite size effects in rutile titania nanoparticles with semilocal and nonlocal density functionals

Authors: Sushree Jagriti Sahoo, Xin Jing, Phanish Suryanarayana, Andrew J. Medford

Abstract: In this work, we employ hybrid and generalized gradient approximation (GGA) level density functional theory (DFT) calculations to investigate the convergence of surface properties and band structure of rutile titania (TiO$_2$) nanoparticles with particle size. The surface energies and band structures are calculated for cuboidal particles with minimum dimension ranging from 3.7 Å (24 atoms) to 10.3… ▽ More In this work, we employ hybrid and generalized gradient approximation (GGA) level density functional theory (DFT) calculations to investigate the convergence of surface properties and band structure of rutile titania (TiO$_2$) nanoparticles with particle size. The surface energies and band structures are calculated for cuboidal particles with minimum dimension ranging from 3.7 Å (24 atoms) to 10.3 Å (384 atoms) using a highly-parallel real-space DFT code to enable hybrid level DFT calculations of larger nanoparticles than are typically practical. We deconvolute the geometric and electronic finite size effects in surface energy, and evaluate the influence of defects on band structure and density of states (DOS). The electronic finite size effects in surface energy vanish when the minimum length scale of the nanoparticles becomes greater than 10 Å. We show that this length scale is consistent with a computationally efficient numerical analysis of the characteristic length scale of electronic interactions. The surface energy of nanoparticles having minimum dimension beyond this characteristic length can be approximated using slab calculations that account for the geometric defects. In contrast, the finite size effects on the band structure is highly dependent on the shape and size of these particles. The DOS for cuboidal particles and more realistic particles constructed using the Wulff algorithm reveal that defect states within the bandgap play a key role in determining the band structure of nanoparticles and the bandgap does not converge to the bulk limit for the particle sizes investigated. △ Less

Submitted 7 July, 2023; v1 submitted 5 October, 2021; originally announced October 2021.

High-temperature Majorana zero modes

Authors: Alejandro Mercado, Sharmistha Sahoo, M. Franz

Abstract: We employ general arguments and numerical simulations to show that unpaired Majorana zero modes can occur in cores of Abrikosov vortices at the interface between a three-dimensional topological insulator, such as Bi$_2$Se$_3$, and a twisted bilayer of high-$T_c$ cuprate superconductor, such as Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. When the twist angle is close to $45^{\rm o}$ the latter forms a fully gap… ▽ More We employ general arguments and numerical simulations to show that unpaired Majorana zero modes can occur in cores of Abrikosov vortices at the interface between a three-dimensional topological insulator, such as Bi$_2$Se$_3$, and a twisted bilayer of high-$T_c$ cuprate superconductor, such as Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$. When the twist angle is close to $45^{\rm o}$ the latter forms a fully gapped topological superconductor up to temperatures approaching its native $T_c\simeq 90$K. Majorana zero modes in these structures will persist up to unprecedented high temperatures and, depending on the quality of the interface, may be protected by gaps with larger magnitudes than other candidate systems. △ Less

Submitted 24 February, 2022; v1 submitted 23 June, 2021; originally announced June 2021.

Comments: 4+2 pages, 5 figures. Version 2 (to appear in Phys. Rev. Letters) contains a significant change: edge mode argument replaced by a direct analytical calculation of the vortex core zero mode

Spectroscopic comprehension of Mott-Hubbard insulator to negative charge transfer metal transition in LaNi_{x}V_{1-x}O_{3} thin films

Authors: Anupam Jana, Sophia Sahoo, Sourav Chowdhury, Arup Kumar Mandal, R. J. Choudhary, D. M. Phase, A. K. Raychaudhuri

Abstract: The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the decreasing in out-of-plane lattice parameter. Doping of Ni does not alter the formal valence state of Ni and V in LaNi_{x}V_{1-x}O_{3} thin films, divulging the absen… ▽ More The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the decreasing in out-of-plane lattice parameter. Doping of Ni does not alter the formal valence state of Ni and V in LaNi_{x}V_{1-x}O_{3} thin films, divulging the absence of carrier doping into the system. The valence band spectrum is observed to comprise of incoherent structure owing to the localized V 3d band along with the coherent structure at Fermi level. With increase in Ni concentration, the weight of the coherent feature increases, which divulges its origin to the Ni 3d-O 2p hybridized band. The shift of Ni 3d-O 2p hybridized band towards higher energy in Ni doped LaVO_{3} films compared to the LaNiO_{3} film endorses the modification in ligand to metal charge transfer (CT) energy. The Ni doping in Mott-Hubbard insulator LaVO_{3} leads to the closure of Mott-Hubbard gap by building of spectral weight that provides the delocalized electrons for conduction. A transition from bandwidth control Mott-Hubbard insulator LaVO_{3} to negative CT metallicity character in LaNiO_{3} film is observed. The study reveals that unlike in Mott-Hubbard insulators where the strong Coulomb interaction between the 3d electrons decides the electronic structure of the system, CT energy can deliver an additional degree of freedom to optimize material properties in Ni doped LaVO_{3} films. △ Less

Submitted 11 June, 2021; originally announced June 2021.

Comments: 30 pages, 8 figures

A Robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events

Authors: Sachin Yadav, Vinay Kaushik, M. P. Saravanan, R. P. Aloysius, V. Ganesan, Sangeeta Sahoo

Abstract: Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi2 and elemental Si as minority phases. The method itself… ▽ More Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si3N4 based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi2 and elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (Ta) and the film thickness. The superconducting critical temperature (Tc) strongly depends on Ta and the maximum Tc obtained from the demonstrated technique is about 4.8 K for the thickness range of about 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased Ta and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (Ic) from the Ginzburg-Landau theoretical limit varies strongly with the thickness. Finally, the Tc, intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with Ta and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor. △ Less

Submitted 22 March, 2021; v1 submitted 19 March, 2021; originally announced March 2021.

Journal ref: Sci. Rep. 11, 7888 (2021)

Observation of Coherent Spin Waves in a Three-Dimensional Artificial Spin Ice Structure

Authors: Sourav Sahoo, Andrew May, Arjen van Den Berg, Amrit Kumar Mondal, Sam Ladak, Anjan Barman

Abstract: Harnessing high-frequency spin dynamics in three-dimensional (3D) nanostructures may lead to paradigm-shifting, next generation devices including high density spintronics and neuromorphic systems. Despite remarkable progress in fabrication, the measurement and interpretation of spin dynamics in complex 3D structures remain exceptionally challenging. Here we take a first step and measure coherent s… ▽ More Harnessing high-frequency spin dynamics in three-dimensional (3D) nanostructures may lead to paradigm-shifting, next generation devices including high density spintronics and neuromorphic systems. Despite remarkable progress in fabrication, the measurement and interpretation of spin dynamics in complex 3D structures remain exceptionally challenging. Here we take a first step and measure coherent spin waves within a 3D artificial spin ice (ASI) structure using Brillouin light scattering. The 3D-ASI was fabricated by using a combination of two-photon lithography and thermal evaporation. Two spin-wave modes were observed in the experiment whose frequencies showed a monotonic variation with the applied field strength. Numerical simulations qualitatively reproduced the observed modes. The simulated mode profiles revealed the collective nature of the modes extending throughout the complex network of nanowires while showing spatial quantization with varying mode quantization numbers. The study shows a well-defined means to explore high-frequency spin dynamics in complex 3D spintronic and magnonic structures. △ Less

Submitted 20 February, 2021; originally announced February 2021.

Traversable wormhole in coupled SYK models with imbalanced interactions

Authors: Rafael Haenel, Sharmistha Sahoo, Timothy H. Hsieh, Marcel Franz

Abstract: A pair of identical Sachdev-Ye-Kitaev (SYK) models with bilinear coupling forms a quantum dual of a traversable wormhole, with a ground state close to the so called thermofield double state. We use adiabaticity arguments and numerical simulations to show that the character of the ground state remains unchanged when interaction strengths in the two SYK models become imbalanced. Analysis of thermody… ▽ More A pair of identical Sachdev-Ye-Kitaev (SYK) models with bilinear coupling forms a quantum dual of a traversable wormhole, with a ground state close to the so called thermofield double state. We use adiabaticity arguments and numerical simulations to show that the character of the ground state remains unchanged when interaction strengths in the two SYK models become imbalanced. Analysis of thermodynamic and dynamical quantities highlights the key signatures of the wormhole phase in the imbalanced case. Further adiabatic evolution naturally leads to the 'maximally imbalanced' limit where fermions in a single SYK model are each coupled to a free Majorana zero mode. This limit is interesting because it could be more easily realized using various setups proposed to implement the SYK model in a laboratory. We find that this limiting case is marginal in that it retains some of the characteristic signatures of the wormhole physics, such as the spectral gap and revival dynamics, but lacks others so that it likely does not represent the full-fledged wormhole dual. We discuss how this scenario could be implemented in the proposed realization of the SYK physics in quantum wires of finite length coupled to a disordered quantum dot. △ Less

Submitted 10 February, 2021; originally announced February 2021.

Comments: 9+4 pages, 6+3 figures

Journal ref: Phys. Rev. B 104, 035141 (2021)

Role of viscoelasticity on the dynamics and aggregation of chemically active sphere-dimers

Authors: Soudamini Sahoo, Sunil Pratap Singh, Snigdha Thakur

Abstract: The impact of complex media on the dynamics of active swimmers has gained a thriving interest in the research community for their prominent applications in various fields. This paper investigates the effect of viscoelasticity on the dynamics and aggregation of chemically powered sphere-dimers by using a coarse-grained hybrid mesoscopic simulation technique. The sphere-dimers perform active motion… ▽ More The impact of complex media on the dynamics of active swimmers has gained a thriving interest in the research community for their prominent applications in various fields. This paper investigates the effect of viscoelasticity on the dynamics and aggregation of chemically powered sphere-dimers by using a coarse-grained hybrid mesoscopic simulation technique. The sphere-dimers perform active motion by virtue of the concentration gradient around the swimmer's surface, produced by the chemical reaction at one end of the dimer. We observe that the fluid elasticity enhances translational and rotational motion of a single dimer, however for a pair of dimers, the clustering in a particular alignment is more pronounced. In case of multiple dimers, the kinetics of cluster formation along with their propulsive nature are presented in detail. The key factors influencing the enhanced motility and the aggregation of dimers are the concentration gradients, hydrodynamic coupling and the microstructures present in the system. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 11 pages, 14 figures

Journal ref: Physics of Fluids, 33, 017120 (2021)

Active Particles in Explicit Solvent: Dynamics of clustering for alignment interaction

Authors: Arabinda Bera, Soudamini Sahoo, Snigdha Thakur, Subir K. Das

Abstract: We study dynamics of clustering in systems containing active particles that are immersed in an explicit solvent. For this purpose we have adopted a hybrid simulation method, consisting of molecular dynamics and multi-particle collision dynamics. In our model, overlap-avoiding passive interaction of an active particle with another active particle or a solvent particle has been taken care of via var… ▽ More We study dynamics of clustering in systems containing active particles that are immersed in an explicit solvent. For this purpose we have adopted a hybrid simulation method, consisting of molecular dynamics and multi-particle collision dynamics. In our model, overlap-avoiding passive interaction of an active particle with another active particle or a solvent particle has been taken care of via variants of Lennard-Jones potential. Dynamic interaction among the active particles has been incorporated via the Vicsek-like self-propulsion that facilitates clustering. We quantify the effects of activity and importance of hydrodynamics on the dynamics of clustering via variations of relevant system parameters. We work with low overall density of active particles. For this the morphology consists of disconnected clusters, the mechanism of growth switching among particle diffusion, diffusive coalescence and ballistic aggregation, depending upon the presence or absence of active and hydrodynamic interactions. Corresponding growth laws have been quantified and discussed in the background of appropriate theoretical pictures. Our results suggest that multi-particle collision dynamics is an effective method for investigation of hydrodynamic phenomena even in active matter systems. △ Less

Submitted 30 December, 2020; originally announced December 2020.

Comments: 5 pages, 4 figures

Superconducting instabilities in a spinful Sachdev-Ye-Kitaev model

Authors: Étienne Lantagne-Hurtubise, Vedangi Pathak, Sharmistha Sahoo, Marcel Franz

Abstract: We introduce a spinful variant of the Sachdev-Ye-Kitaev model with an effective time reversal symmetry, which can be solved exactly in the limit of a large number $N$ of degrees of freedom. At low temperature, its phase diagram includes a compressible non-Fermi liquid and a strongly-correlated spin singlet superconductor that shows a tunable enhancement of the gap ratio predicted by BCS theory. Th… ▽ More We introduce a spinful variant of the Sachdev-Ye-Kitaev model with an effective time reversal symmetry, which can be solved exactly in the limit of a large number $N$ of degrees of freedom. At low temperature, its phase diagram includes a compressible non-Fermi liquid and a strongly-correlated spin singlet superconductor that shows a tunable enhancement of the gap ratio predicted by BCS theory. These two phases are separated by a first-order transition, in the vicinity of which a gapless superconducting phase, characterized by a non-zero magnetization, is stabilized upon applying a Zeeman field. We study equilibrium transport properties of such superconductors using a lattice construction, and propose a physical platform based on topological insulator flakes where they may arise from repulsive electronic interactions. △ Less

Submitted 23 July, 2021; v1 submitted 23 December, 2020; originally announced December 2020.

Comments: 5 pages, 5 figures + Appendices. (v2:) Revised and extended version with an additional author. (v3:) Close to published version

Journal ref: Phys. Rev. B 104, 020509 (2021)

Ground state properties and exact thermodynamics of a 2-leg anisotropic spin ladder system

Authors: Sk Saniur Rahaman, Shaon Sahoo, Manoranjan Kumar

Abstract: We study a frustrated two-leg spin ladder with alternate isotropic Heisenberg and Ising rung exchange interactions, whereas, interactions along legs and diagonals are Ising-type. All the interactions in the ladder are anti-ferromagnetic in nature and induce frustration in the system. This model shows four interesting quantum phases: (i) stripe rung ferromagnetic (SRFM), (ii) stripe rung ferromagne… ▽ More We study a frustrated two-leg spin ladder with alternate isotropic Heisenberg and Ising rung exchange interactions, whereas, interactions along legs and diagonals are Ising-type. All the interactions in the ladder are anti-ferromagnetic in nature and induce frustration in the system. This model shows four interesting quantum phases: (i) stripe rung ferromagnetic (SRFM), (ii) stripe rung ferromagnetic with edge singlet (SRFM-E), (iii) anisotropic antiferromagnetic (AAFM), and (iv) stripe leg ferromagnetic (SLFM) phase. We construct a quantum phase diagram for this model and show that in stripe rung ferromagnet (SRFM), the same type of sublattice spins (either $S$ or $σ$-type spins) are aligned in the same direction. Whereas, in anisotropic antiferromagnetic phase, both $S$ and $σ$-type of spins are anti-ferromagnetically aligned with each other, two nearest $S$ spins along the rung form an anisotropic singlet bond whereas two nearest $σ$ spins form an Ising bond. In large Heisenberg rung exchange interaction limit, spins on each leg are ferromagnetically aligned, but spins on different legs are anti-ferromagnetically aligned. The thermodynamic quantities like $Cv(T)$, $χ(T)$ and $S(T)$ are also calculated using the transfer matrix method for different phase. The magnetic gap in the SRFM and the SLFM can be notice from $χ(T)$ and $Cv(T)$ curves. △ Less

Submitted 24 November, 2020; originally announced November 2020.

Comments: 10 pages, 7 figures

Interface study of thermally driven chemical kinetics involved in Ti/Si3N4 based metal-substrate assembly by X-ray photoelectron spectroscopy

Authors: Sachin Yadav, Sangeeta Sahoo

Abstract: Diffusion mediated interaction in metal-substrate assembly during high temperature annealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to produce titanium nitride and silicide based binary composites while undergoing high vacuum annealing process at temperatures 650°C and above. Diffusion of thermally decomposed S… ▽ More Diffusion mediated interaction in metal-substrate assembly during high temperature annealing leads to possible formation of new composite materials. Here, sputtered grown Ti films on Si3N4/Si substrate has been reported to produce titanium nitride and silicide based binary composites while undergoing high vacuum annealing process at temperatures 650°C and above. Diffusion of thermally decomposed Si and N atoms from Si3N4 and their subsequent chemical reaction with Ti have been probed by X-ray photo electron spectroscopy. For annealing at 800°C and above, most of the Si atoms show preferences to stay in elemental form rather than developing silicide phase with Ti. Whereas at lower annealing temperature, silicide becomes the dominant phase for decomposed Si atoms. However, N atoms react promptly with Ti and form TiN which appears as the majority phase for each of the studied annealing temperature. Further, the nitride and silicide phases across the films have been compared quantitatively for various annealing temperature and the maximum silicide formation is observed for the sample annealed at 780°C. Finally, the thermally anchored metal-substrate interaction mechanism can be exploited to fabricate disordered superconducting TiN films where TiSi2 and Si can be used to tune the level of disorder by altering the annealing temperature. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Journal ref: Applied Surface Science, 2020

Fast transient charge trapping in salt-aided CVD synthesized monolayer MoS2 field-effect transistor

Authors: Sameer Kumar Mallik, Sandhyarani Sahoo, Mousam Charan Sahu, Sanjeev K Gupta, Saroj Prasad Dash, Rajeev Ahuja, Satyaprakash Sahoo

Abstract: Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a large-scale synthesis of pristine quality monolayer MoS2 but also advanced nanofabrication and characterization methods for investigation of intrinsic device performances… ▽ More Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a large-scale synthesis of pristine quality monolayer MoS2 but also advanced nanofabrication and characterization methods for investigation of intrinsic device performances. Here, we conduct a meticulous investigation of the fast transient charge trapping mechanisms in field-effect transistors (FETs) of high-quality CVD MoS2 monolayers grown by a salt-driven method. To unfold the intrinsic transistor behavior, an amplitude sweep pulse I~V methodology is adapted with varying pulse widths. A significant increase in the field-effect mobility up to ~100% is achieved along with a hysteresis-free transfer characteristic by applying the shortest pulse. Moreover, to correlate these results, a single pulse time-domain drain current analysis is carried out to unleash the fast and slow transient charge trapping phenomena. Furthermore, rigorous density functional theory (DFT) calculations are implemented to inspect the effects of the Schottky barrier and metal-induced gap states between drain/source electrode and MoS2 for the superior carrier transport. Our findings on the controllable transient charge trapping mechanisms for estimation of intrinsic field-effect mobility and hysteresis-free transfer characteristic in salt-assisted CVD-grown MoS2 FETs will be beneficial for future device applications in complex memory, logic, and sensor systems. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Magnetization Dynamics of Nanoscale Magnetic Materials: A Perspective

Authors: Anjan Barman, Sucheta Mondal, Sourav Sahoo, Anulekha De

Abstract: Nanomagnets form the building blocks for a gamut of miniaturized energy-efficient devices including data storage, memory, wave-based computing, sensors and biomedical devices. They also offer a span of exotic phenomena and stern challenges. The progress in the magnetization dynamics of single nanomagnets and one- and two-dimensional arrays of nanostructures in the form of dots, antidots, nanoparti… ▽ More Nanomagnets form the building blocks for a gamut of miniaturized energy-efficient devices including data storage, memory, wave-based computing, sensors and biomedical devices. They also offer a span of exotic phenomena and stern challenges. The progress in the magnetization dynamics of single nanomagnets and one- and two-dimensional arrays of nanostructures in the form of dots, antidots, nanoparticles, binary and bicomponent structures and patterned multilayers have been presented. Progress in unconventional and new structures like artificial spin ice and three-dimensional nanomagnets and spin textures like domain walls, vortex and skyrmions have been presented. Furthermore, a huge variety of new topics in the magnetization dynamics of magnetic nanostructures are rapidly emerging. An overview of the steadily evolving topics like spatio-temporal imaging of fast dynamics of nanostructures, dynamics of spin textures, artificial spin ice have been discussed. In addition, dynamics of contemporary and newly transpired magnetic architectures such as nanomagnet arrays with complex basis and symmetry, magnonic quasicrystals, fractals, defect structures, novel three-dimensional structures have been introduced. Effects of various spin-orbit coupling and ensuing spin textures as well as quantum hybrid systems comprising of magnon-photon, magnon-phonon and magnon-magnon coupling, antiferromagnetic nanostructures are rapidly growing and are expected to dominate this research field in the coming years. Finally, associated topics like nutation dynamics and nanomagnet antenna are briefly discussed. Despite showing a great progress, only a small fraction of nanomagnetism and its ancillary topics have been explored so far and huge efforts are envisaged in this evergrowing research area in the generations to come. △ Less

Submitted 13 August, 2020; originally announced August 2020.

Comments: 61 pages, 16 figures

Coupled wire construction of a topological phase with chiral tricritical Ising edge modes

Authors: Chengshu Li, Hiromi Ebisu, Sharmistha Sahoo, Yuval Oreg, Marcel Franz

Abstract: Tricritical Ising (TCI) phase transition is known to occur in several interacting spin and Majorana fermion models and is described in terms of a supersymmetric conformal field theory (CFT) with central charge $c=7/10$. The field content of this CFT is highly nontrivial and includes among its primary fields the Fibonacci anyon, making it of potential interest to strategies seeking to implement fau… ▽ More Tricritical Ising (TCI) phase transition is known to occur in several interacting spin and Majorana fermion models and is described in terms of a supersymmetric conformal field theory (CFT) with central charge $c=7/10$. The field content of this CFT is highly nontrivial and includes among its primary fields the Fibonacci anyon, making it of potential interest to strategies seeking to implement fault-tolerant topological quantum computation with non-Abelian phases of matter. In this paper we explore the possibility that a TCI CFT can occur at the edge of a gapped two-dimensional topological state as a stable phase. We discuss a possible realization of this 2D phase based on a coupled-wire construction using the Grover-Sheng-Vishwanath chain model of Majorana zero modes coupled to Ising spins which is known to undergo the TCI phase transition. From the combined analysis using mean-field theory, conformal field theory and density matrix renormalization group (DMRG) on 2- and 4-leg ladders, we find that the left- and right-moving gapless TCI modes become spatially separated and reside on two opposite edges of the system, forming a precursor of the required 2D topological phase. △ Less

Submitted 13 October, 2020; v1 submitted 10 August, 2020; originally announced August 2020.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 102, 165123 (2020)

Nanochannels for Spin-Wave Manipulation in Ni80Fe20 Nanodot Arrays

Authors: Sourav Sahoo, Surya Narayan Panda, Saswati Barman, Yoshichika Otani, Anjan Barman

Abstract: Patterned magnetic nanostructures are potential candidates for future energy efficient, on-chip communication devices. Here, we have experimentally and numerically studied the role of nanochannels to manipulate spin waves in Ni80Fe20 connected nanodot arrays of varying filling fraction. Rich spin-wave spectra are observed in these samples, where the number of spin-wave modes decreases with increas… ▽ More Patterned magnetic nanostructures are potential candidates for future energy efficient, on-chip communication devices. Here, we have experimentally and numerically studied the role of nanochannels to manipulate spin waves in Ni80Fe20 connected nanodot arrays of varying filling fraction. Rich spin-wave spectra are observed in these samples, where the number of spin-wave modes decreases with increasing filling fraction due to the retrenchment of the demagnetizing field. The nanochannels affect the spin-wave modes of the connected dots through dipole-exchange coupling. For all modes the vertical nanochannels couple the nanodots, except for the highest frequency modes where all nanochannels act as coupler. This feature is further explored in the simulation, which reveals that only the highest frequency mode can propagate through all the nanochannels, analogues to an electronic demultiplexer. This study will be useful to understand the role of nanochannels in patterned magnetic nanostructures and their applications in spin-wave based communication devices. △ Less

Submitted 15 July, 2020; originally announced July 2020.

Traversable wormhole and Hawking-Page transition in coupled complex SYK models

Authors: Sharmistha Sahoo, Étienne Lantagne-Hurtubise, Stephan Plugge, Marcel Franz

Abstract: Recent work has shown that coupling two identical Sachdev-Ye-Kitaev (SYK) models can realize a phase of matter that is holographically dual to an eternal traversable wormhole. This phase supports revival oscillations between two quantum chaotic systems that can be interpreted as information traversing the wormhole. Here we generalize these ideas to a pair of coupled SYK models with complex fermion… ▽ More Recent work has shown that coupling two identical Sachdev-Ye-Kitaev (SYK) models can realize a phase of matter that is holographically dual to an eternal traversable wormhole. This phase supports revival oscillations between two quantum chaotic systems that can be interpreted as information traversing the wormhole. Here we generalize these ideas to a pair of coupled SYK models with complex fermions that respect a global U(1) charge symmetry. Such models show richer behavior than conventional SYK models with Majorana fermions and may be easier to realize experimentally. We consider two different couplings, namely tunneling and charge-conserving two-body interactions, and obtain the corresponding phase diagram using a combination of numerical and analytical techniques. At low temperature we find a charge-neutral gapped phase that supports revival oscillations, with a ground state close to the thermofield double, which we argue is dual to a traversable wormhole. We also find two different gapless non-Fermi liquid phases with tunable charge density which we interpret as dual to a `large' and `small' charged black hole. The gapped and gapless phases are separated by a first-order phase transition of the Hawking-Page type. Finally, we discuss an SU(2)-symmetric limit of our model that is closely related to proposed realizations of SYK physics with spinful fermions in graphene, and explain its relevance for future experiments on this system. △ Less

Submitted 16 October, 2020; v1 submitted 10 June, 2020; originally announced June 2020.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. Research 2, 043049 (2020)

The effect of material defects on resonant spin wave modes in a nanomagnet

Authors: Md Ahsanul Abeed, Sourav Sahoo, David Winters, Anjan Barman, Supriyo Bandyopadhyay

Abstract: We have theoretically studied how resonant spin wave modes in an elliptical nanomagnet are affected by fabrication defects, such as small local thickness variations. Our results indicate that defects of this nature, which can easily result from the fabrication process, or are sometimes deliberately introduced during the fabrication process, will significantly alter the frequencies, magnetic field… ▽ More We have theoretically studied how resonant spin wave modes in an elliptical nanomagnet are affected by fabrication defects, such as small local thickness variations. Our results indicate that defects of this nature, which can easily result from the fabrication process, or are sometimes deliberately introduced during the fabrication process, will significantly alter the frequencies, magnetic field dependence of the frequencies, and the power and phase profiles of the resonant spin wave modes. They can also spawn new resonant modes and quench existing ones. All this has important ramifications for multi-device circuits based on spin waves, such as phase locked oscillators for neuromorphic computing, where the device-to-device variability caused by defects can be inhibitory. △ Less

Submitted 8 March, 2020; originally announced March 2020.

Journal ref: Scientific Reports, 9, 16635 (2019)

Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy

Authors: Sandhyarani Sahoo, Sameer Kumar Mallik, Mousam Charan Sahu, Anjana Joseph, Bibhudutta Rout, Gopal K. Pradhan, Satyaprakash Sahoo

Abstract: Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this… ▽ More Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this technique is that the light source (laser) can be used both as heating and excitation source. The variations of the first-order Raman peak position of the freestanding silicon NW with respect to temperature and laser power are carried out. A critical analysis of effective laser power absorbed by exposed silicon NW, the detailed Raman study along with the concept of longitudinal heat distribution in silicon NW, the thermal conductivity of the freestanding silicon NW of 112 nm diameter is estimated to be ~53 W/m.K. △ Less

Submitted 26 February, 2020; originally announced February 2020.

Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2

Authors: S. Sahoo, U. Dutta, L. Harnagea, A. K. Sood, S. Karmakar

Abstract: We report pressure evolution of charge density wave (CDW) order and emergence of superconductivity (SC) in 1T-VSe2 single crystal by studying resistance and magnetoresistance behavior under high pressure. With increasing quasi-hydrostatic pressure the CDW order enhances with increase ofthe ordering temperature up to 240K at 12 GPa. Upon further increase of pressure, the resistance anomaly due to C… ▽ More We report pressure evolution of charge density wave (CDW) order and emergence of superconductivity (SC) in 1T-VSe2 single crystal by studying resistance and magnetoresistance behavior under high pressure. With increasing quasi-hydrostatic pressure the CDW order enhances with increase ofthe ordering temperature up to 240K at 12 GPa. Upon further increase of pressure, the resistance anomaly due to CDW order gets suppressed drastically and superconductivity emerges at ~15 GPa, with the onset critical temperature (Tc) ~ 4K. The pressure dependence of Tc is found negligible, different from the significant increase or a dome-shape seen in iso-structural layered diselenide superconductors. The high pressure magnetoresistance and Hall measurements suggest successive electronic structural changes with Fermi surface modifications at 6 GPa and 12GPa. From the observed negative magnetoresistance in this pressure range and absence of coexisting CDW and SC phases, we propose that intra-layer spin-fluctuation can play a role in the emergence of superconductivity in the high pressure phase. △ Less

Submitted 30 August, 2019; originally announced August 2019.

Comments: 6 pages

Journal ref: Phys. Rev. B 101, 014514 (2020)

Tunability of domain structure and magnonic spectra in antidot arrays of Heusler alloy

Authors: Sougata Mallick, Sucheta Mondal, Takeshi Seki, Sourav Sahoo, Thomas Forrest, Francesco Maccherozzi, Zhenchao Wen, Saswati Barman, Anjan Barman, Koki Takanashi, Subhankar Bedanta

Abstract: Materials suitable for magnonic crystals demand low magnetic damping and long spin wave (SW) propagation distance. In this context Co based Heusler compounds are ideal candidates for magnonic based applications. In this work, antidot arrays (with different shapes) of epitaxial $\mathrm{Co}_2\mathrm{Fe}_{0.4}\mathrm{Mn}_{0.6}\mathrm{Si}$ (CFMS) Heusler alloy thin films have been prepared using e-be… ▽ More Materials suitable for magnonic crystals demand low magnetic damping and long spin wave (SW) propagation distance. In this context Co based Heusler compounds are ideal candidates for magnonic based applications. In this work, antidot arrays (with different shapes) of epitaxial $\mathrm{Co}_2\mathrm{Fe}_{0.4}\mathrm{Mn}_{0.6}\mathrm{Si}$ (CFMS) Heusler alloy thin films have been prepared using e-beam lithography and sputtering technique. Magneto-optic Kerr effect and ferromagnetic resonance analysis have confirmed the presence of dominant cubic and moderate uniaxial magnetic anisotropies in the thin films. Domain imaging via x-ray photoemission electron microscopy on the antidot arrays reveals chain like switching or correlated bigger domains for different shape of the antidots. Time-resolved MOKE microscopy has been performed to study the precessional dynamics and magnonic modes of the antidots with different shapes. We show that the optically induced spin-wave spectra in such antidot arrays can be tuned by changing the shape of the holes. The variation in internal field profiles, pinning energy barrier, and anisotropy modifies the spin-wave spectra dramatically within the antidot arrays with different shapes. We further show that by combining the magnetocrystalline anisotropy with the shape anisotropy, an extra degree of freedom can be achieved to control the magnonic modes in such antidot lattices. △ Less

Submitted 5 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. Applied (2019)

Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Authors: Bikash Gajar, Sachin Yadav, Deepika Sawle, Kamlesh K. Maurya, Anurag Gupta, R. P. Aloysius, Sangeeta Sahoo

Abstract: Here we report a novel nitridation technique for transforming niobium into hexagonal Nb2N which appears to be superconducting below 1K. The nitridation is achieved by high temperature annealing of Nb films grown on Si3N4/Si (100) substrate under high vacuum. The structural characterization directs the formation of a majority Nb2N phase while the morphology shows granular nature of the films. The t… ▽ More Here we report a novel nitridation technique for transforming niobium into hexagonal Nb2N which appears to be superconducting below 1K. The nitridation is achieved by high temperature annealing of Nb films grown on Si3N4/Si (100) substrate under high vacuum. The structural characterization directs the formation of a majority Nb2N phase while the morphology shows granular nature of the films. The temperature dependent resistance measurements reveal a wide metal-to-superconductor transition featuring two distinct transition regions. The region close to the normal state varies strongly with the film thickness, whereas, the second region in the vicinity of the superconducting state remains almost unaltered but exhibiting resistive tailing. The current-voltage characteristics also display wide transition embedded with intermediate resistive states originated by phase slip lines. The transition width in current and the number of resistive steps depend on film thickness and they both increase with decrease in thickness. The broadening in transition width is explained by progressive establishment of superconductivity through proximity coupled superconducting nano-grains while finite size effects and quantum fluctuation may lead to the resistive tailing. Finally, by comparing with Nb control samples, we emphasize that Nb2N offers unconventional superconductivity with promises in the field of phase slip based device applications. △ Less

Submitted 20 June, 2019; originally announced June 2019.

Journal ref: Scientific Reports 9, 8811 (2019)