Showing 1–15 of 15 results for author: Sabirianov, R F

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal

Authors: Mengying Bian, Liang Zhu, Xiao Wang, Junho Choi, Rajesh V. Chopdekar, Sichen Wei, Lishu Wu, Chang Huai, Austin Marga, Qishuo Yang, Yuguang C. Li, Fei Yao, Ting Yu, Scott A. Crooker, Xuemei M Cheng, Renat F. Sabirianov, Shengbai Zhang, Junhao Lin, Yanglong Hou, Hao Zeng

Abstract: Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting th… ▽ More Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few ten microns, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)-7 x 7 (WSe2) supercell matching, forming a single crystalline moire superlattice. Our work has established a conceptually distinct paradigm of thin film epitaxy termed dative epitaxy, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Journal ref: Advanced Materials 2022, 2200117

Deciphering chemical order/disorder and material properties at the single-atom level

Authors: Yongsoo Yang, Chien-Chun Chen, M. C. Scott, Colin Ophus, Rui Xu, Alan Pryor Jr, Li Wu, Fan Sun, W. Theis, Jihan Zhou, Markus Eisenbach, Paul R. C. Kent, Renat F. Sabirianov, Hao Zeng, Peter Ercius, Jianwei Miao

Abstract: Correlating 3D arrangements of atoms and defects with material properties and functionality forms the core of several scientific disciplines. Here, we determined the 3D coordinates of 6,569 iron and 16,627 platinum atoms in a model iron-platinum nanoparticle system to correlate 3D atomic arrangements and chemical order/disorder with material properties at the single-atom level. We identified rich… ▽ More Correlating 3D arrangements of atoms and defects with material properties and functionality forms the core of several scientific disciplines. Here, we determined the 3D coordinates of 6,569 iron and 16,627 platinum atoms in a model iron-platinum nanoparticle system to correlate 3D atomic arrangements and chemical order/disorder with material properties at the single-atom level. We identified rich structural variety and chemical order/disorder including 3D atomic composition, grain boundaries, anti-phase boundaries, anti-site point defects and swap defects. We show for the first time that experimentally measured 3D atomic coordinates and chemical species with 22 pm precision can be used as direct input for first-principles calculations of material properties such as atomic magnetic moments and local magnetocrystalline anisotropy. This work not only opens the door to determining 3D atomic arrangements and chemical order/disorder of a wide range of nanostructured materials with high precision, but also will transform our understanding of structure-property relationships at the most fundamental level. △ Less

Submitted 7 July, 2016; originally announced July 2016.

Comments: 21 pages, 4 figures

Journal ref: Nature 542 (2017) 75-79

Transport Spin Polarization of High-Curie Temperature MnBi Films

Authors: P. Kharel, P. Thapa, P. Lukashev, R. F. Sabirianov, E. Y. Tsymbal, D. J. Sellmyer, B. Nadgorny

Abstract: We report on the study of the structural, magnetic and transport properties of highly textured MnBi films with the Curie temperature of 628K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reflection spectroscopy and perform fully relativistic band structure calculations of MnBi. A spin polarization from 51\pm1 to 63… ▽ More We report on the study of the structural, magnetic and transport properties of highly textured MnBi films with the Curie temperature of 628K. In addition to detailed measurements of resistivity and magnetization, we measure transport spin polarization of MnBi by Andreev reflection spectroscopy and perform fully relativistic band structure calculations of MnBi. A spin polarization from 51\pm1 to 63\pm1% is observed, consistent with the calculations and with an observation of a large magnetoresistance in MnBi contacts. The band structure calculations indicate that, in spite of almost identical densities of states at the Fermi energy, the large disparity in the Fermi velocities leads to high transport spin polarization of MnBi. The correlation between the values of magnetization and spin polarization is discussed. △ Less

Submitted 11 December, 2010; originally announced December 2010.

Enhanced initial protein adsorption on an engineered nanostructured cubic zirconia

Authors: R. F. Sabirianov, A. Rubinstein, F. Namavar

Abstract: Motivated by experimentally observed biocompatibility enhancement of nanoengineered cubic zirconia ZrO2 coatings to mesenchymal stromal cells, we have carried out computational analysis of the initial immobilization of one of known structural fragment of the adhesive protein (fibronectin) on the corresponding surface. We constructed an atomistic model of the zirconia nano-hillock of 3-fold symmetr… ▽ More Motivated by experimentally observed biocompatibility enhancement of nanoengineered cubic zirconia ZrO2 coatings to mesenchymal stromal cells, we have carried out computational analysis of the initial immobilization of one of known structural fragment of the adhesive protein (fibronectin) on the corresponding surface. We constructed an atomistic model of the zirconia nano-hillock of 3-fold symmetry based on AFM and TEM images. First-principle quantum-mechanical calculations show a substantial variation of electrostatic potential at the hillock due to the presence of surface features such as edges and vertexes. Using an implemented Monte Carlo simulated annealing method we found the orientation of the immobilized protein on the zirconia surface (both flat and nanostructured) and contribution of the each amino acid residue from the protein sequence to the adsorption energy. Accounting for the variation of the dielectric permittivity at the protein-implant interface we use a model distance-dependent dielectric function to describe the inter-atom electrostatic (Coulomb) interactions in the adsorption potential. We find that the initial immobilization of the rigid protein fragment on the nanostructured pyramidal ZrO2 surface is achieved with magnitude of adsorption energy larger than the one for the protein on the smooth (flat) surface. The strong attractive electrostatic interactions are a major factor in the enhanced adsorption at nanostructured surface that is absent in the case of adsorption on the flat uncharged surface. We show that the best electrostatic and steric fit of the protein to the inorganic surface corresponds to a minimum of the adsorption energy determined by the non-covalent interactions. △ Less

Submitted 5 October, 2010; v1 submitted 21 September, 2010; originally announced September 2010.

Comments: 13 pages, 10 figures

Spin density in frustrated magnets under mechanical stress: Mn-based antiperovskites

Authors: Pavel Lukashev, Renat F. Sabirianov, Kirill Belashchenko

Abstract: In this paper we present results of our calculations of the non-collinear spin density distribution in the systems with frustrated triangular magnetic structure (Mn-based antiperovskite compounds, Mn_{3}AN (A=Ga, Zn)) in the ground state and under external mechanical strain. We show that the spin density in the (111)-plane of the unit cell forms a "domain" structure around each atomic site but i… ▽ More In this paper we present results of our calculations of the non-collinear spin density distribution in the systems with frustrated triangular magnetic structure (Mn-based antiperovskite compounds, Mn_{3}AN (A=Ga, Zn)) in the ground state and under external mechanical strain. We show that the spin density in the (111)-plane of the unit cell forms a "domain" structure around each atomic site but it has a more complex structure than the uniform distribution of the rigid spin model, i.e. Mn atoms in the (111)-plane form non-uniform "spin clouds", with the shape and size of these "domains" being function of strain. We show that both magnitude and direction of the spin density change under compressive and tensile strains, and the orientation of "spin domains" correlates with the reversal of the strain, i.e. switching compressive to tensile strain (and vice versa) results in "reversal" of the domains. We present analysis for the intra-atomic spin-exchange interaction and the way it affects the spin density distribution. In particular, we show that the spin density inside the atomic sphere in the system under mechanical stress depends on the degree of localization of electronic states. △ Less

Submitted 9 September, 2009; originally announced September 2009.

Flexomagnetic effect in Mn-based antiperovskites

Authors: Pavel Lukashev, Renat F. Sabirianov

Abstract: We report appearance of the net magnetization in Mn-based antiperovskite compounds as a result of the external strain gradient (flexomagnetic effect). In particular, we describe the mechanism of the magnetization induction in the Mn_{3}GaN at the atomic level in terms of the behavior of the local magnetic moments (LMM) of the Mn atoms. We show that the flexomagnetic effect is linear and results… ▽ More We report appearance of the net magnetization in Mn-based antiperovskite compounds as a result of the external strain gradient (flexomagnetic effect). In particular, we describe the mechanism of the magnetization induction in the Mn_{3}GaN at the atomic level in terms of the behavior of the local magnetic moments (LMM) of the Mn atoms. We show that the flexomagnetic effect is linear and results from the non-uniformity of the strain, i.e. it is absent not only in the ground state but also when the applied external strain is uniform. We estimate the flexomagnetic coefficient to be 1.95 mu_{B}*angstrom. We show that at the moderate values of the strain gradient (~ 0.1%) the flexomagnetic contribution is the only non-vanishing input to the induced magnetization. △ Less

Submitted 9 September, 2009; originally announced September 2009.

First-principles analysis of spin-disorder resistivity of Fe and Ni

Authors: A. L. Wysocki, R. F. Sabirianov, M. van Schilfgaarde, K. D. Belashchenko

Abstract: Spin-disorder resistivity of Fe and Ni and its temperature dependence are analyzed using noncollinear density functional calculations within the supercell method. Different models of thermal spin disorder are considered, including the mean-field approximation and the nearest-neighbor Heisenberg model. Spin-disorder resistivity is found to depend weakly on magnetic short-range order. If the local… ▽ More Spin-disorder resistivity of Fe and Ni and its temperature dependence are analyzed using noncollinear density functional calculations within the supercell method. Different models of thermal spin disorder are considered, including the mean-field approximation and the nearest-neighbor Heisenberg model. Spin-disorder resistivity is found to depend weakly on magnetic short-range order. If the local moments are kept frozen at their zero-temperature values, very good agreement with experiment is obtained for Fe, but for Ni the resistivity at elevated temperatures is significantly overestimated. Agreement with experiment for Fe is improved if the local moments are iterated to self-consistency. The overestimation of the resistivity for paramagnetic Ni is attributed to the reduction of the local moments down to 0.35 Bohr magnetons. Overall, the results suggest that low-energy spin fluctuations in Fe and Ni are better viewed as classical rotations of local moments rather than quantized spin fluctuations that would require an (S+1)/S correction. △ Less

Submitted 15 May, 2009; originally announced May 2009.

Comments: 10 pages (RevTeX), 6 eps figures

Journal ref: Phys. Rev. B 80, 224423 (2009)

Surface Magnetoelectric Effect in Ferromagnetic Metal Films

Authors: Chun-Gang Duan, Julian P. Velev, R. F. Sabirianov, Ziqiang Zhu, Junhao Chu, S. S. Jaswal, E. Y. Tsymbal

Abstract: A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are of co… ▽ More A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001) and Co(0001) films in the presence of external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are of considerable interest in the area of electrically-controlled magnetism and magnetoelectric phenomena. △ Less

Submitted 6 August, 2008; originally announced August 2008.

The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions

Authors: J. D. Burton, R. F. Sabirianov, J. P. Velev, O. N. Mryasov, E. Y. Tsymbal

Abstract: First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly… ▽ More First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of this phenomenon stems from resonant states localized in the electrodes near the junction break. The energy and broadening of these states is strongly affected by the magnetization orientation due to spin-orbit coupling, causing TAMR to be sensitive to bias voltage on a scale of a few mV. Our results bear a resemblance to recent experimental data and suggest that TAMR driven by resonant states is a general phenomenon typical for magnetic broken contacts and other experimental geometries where a magnetic tip is used to probe electron transport. △ Less

Submitted 28 June, 2007; v1 submitted 13 March, 2007; originally announced March 2007.

Comments: 4 pages, 3 figures

Magnetic Moment Softening and Domain Wall Resistance in Ni Nanowires

Authors: J. D. Burton, R. F. Sabirianov, S. S. Jaswal, E. Y. Tsymbal, O. N. Mryasov

Abstract: Magnetic moments in atomic scale domain walls formed in nanoconstrictions and nanowires are softened which affects dramatically the domain wall resistance. We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a r… ▽ More Magnetic moments in atomic scale domain walls formed in nanoconstrictions and nanowires are softened which affects dramatically the domain wall resistance. We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a reduction of the magnetic moments in the domain wall. This magnetic moment softening strongly enhances the domain wall resistance due to scattering produced by the local perturbation of the electronic potential. △ Less

Submitted 30 January, 2006; originally announced January 2006.

Comments: 4 pages, 5 figures

Interface-Controlled Ferroelectricity at the Nanoscale

Authors: Chun-Gang Duan, Renat F. Sabirianov, Wai-Ning Mei, Sitaram S. Jaswal, Evgeny Y. Tsymbal

Abstract: Recent experimental results demonstrate that in thin films ferroelectricity persists down to film thickness of a few unit cells. This finding opens an avenue for novel electronic devices based on ultathin ferroelectrics, but also raises questions about factors controlling ferroelectricity and the nature of the ferroelectric state at the nanoscale. Here we report a first-principles study of KNbO3… ▽ More Recent experimental results demonstrate that in thin films ferroelectricity persists down to film thickness of a few unit cells. This finding opens an avenue for novel electronic devices based on ultathin ferroelectrics, but also raises questions about factors controlling ferroelectricity and the nature of the ferroelectric state at the nanoscale. Here we report a first-principles study of KNbO3 ferroelectric thin films placed between two metal electrodes, either SrRuO3 or Pt. We show that the bonding at the ferroelectric-metal interface imposes severe constraints on the displacement of atoms, destroying the bulk tetragonal soft mode in thin ferroelectric films. This does not, however, quench local polarization. If the interface bonding is sufficiently strong the ground state represents a ferroelectric double-domain structure, driven by the intrinsic oppositely-oriented dipole moments at the two interfaces. Although the critical thickness for the net polarization of KNbO3 film is finite - about 1 nm for Pt and 1.8 nm for SrRuO3 electrodes - local polarization persists down to thickness of a unit cell. △ Less

Submitted 21 October, 2005; originally announced October 2005.

Comments: 5 pages, 4 figures

Journal ref: Nano Letters 6, 483-487 (2006)

Domain Wall Magnetoresistance of Co Nanowires

Authors: R. F. Sabirianov, A. K. Solanki, J. D. Burton, S. S. Jaswal, E. Y. Tsymbal

Abstract: Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to 1.5 nm. We show that finite-size effects play an important role in these nanowires resulting in oscillatory behavior of electronic charge and the magnetization… ▽ More Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to 1.5 nm. We show that finite-size effects play an important role in these nanowires resulting in oscillatory behavior of electronic charge and the magnetization as a function of the wire thickness, and a non-monotonic behavior of spin-dependent quantized conductance. We calculate the magnetoresistance (MR) of a domain wall (DW) modeled by a spin-spiral region of finite width sandwiched between two semi-infinite Co wire leads. We find that the DW MR decreases very rapidly, on the scale of a few interatomic layers, with the increasing DW width. The largest MR value of about 250% is predicted for an abrupt DW in the monatomic wire. We show that, for some energy values, the density of states and the conductance may be non-zero only in one spin channel, making the MR for the abrupt DW infinitely large. We also demonstrate that for the abrupt DW a large MR may occur due to the hybridization between two spin subbands across the DW interface. We do not find, however, such a behavior at the Fermi energy for the Co wires considered. △ Less

Submitted 13 July, 2005; v1 submitted 11 June, 2005; originally announced June 2005.

Comments: 9 Pages, 6 figures, 1 table

Giant Electroresistance in Ferroelectric Tunnel Junctions

Authors: M. Ye. Zhuravlev, R. F. Sabirianov, S. S. Jaswal, E. Y. Tsymbal

Abstract: The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of polarization charges in metallic electrodes and direct quantum tunneling across a ferroelectric barrier we calculate the change in the tunneling conductance associated… ▽ More The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of polarization charges in metallic electrodes and direct quantum tunneling across a ferroelectric barrier we calculate the change in the tunneling conductance associated with the polarization switching. We find the conductance change of a few orders of magnitude for metallic electrodes with significantly different screening lengths. This giant electroresistance effect is the consequence of a different potential profile seen by transport electrons for the two opposite polarization orientations. △ Less

Submitted 3 February, 2005; originally announced February 2005.

Comments: 4 pages

Ballistic anisotropic magnetoresistance

Authors: J. Velev, R. F. Sabirianov, S. S. Jaswal, E. Y. Tsymbal

Abstract: Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the mag… ▽ More Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the magnetization direction changes. We illustrate the significance of this phenomenon by performing ab-initio calculations of the ballistic conductance in ferromagnetic Ni and Fe nanowires which display a sizable BAMR when the magnetization changes direction from parallel to perpendicular to the wire axis. △ Less

Submitted 22 December, 2004; originally announced December 2004.

Journal ref: Phys. Rev. Lett. 94, 127203 (2005)

Point defect energetics in silicon using the LDA+U method

Authors: Panchapakesan Ramanarayanan, Renat F. Sabirianov, Kyeongjae Cho

Abstract: We present the first principles results of point defect energetics in silicon calculated using the LDA+U method: a Hubbard type on-site interaction added to the local density approximation (LDA). The on-site Coulomb and exchange parameters were tuned to match the experimental band gap in Si. The relaxed configuration was obtained using the LDA; LDA+U was used only to calculate the energies. Our… ▽ More We present the first principles results of point defect energetics in silicon calculated using the LDA+U method: a Hubbard type on-site interaction added to the local density approximation (LDA). The on-site Coulomb and exchange parameters were tuned to match the experimental band gap in Si. The relaxed configuration was obtained using the LDA; LDA+U was used only to calculate the energies. Our values of point defect energetics are in very good agreement with both recent experimental results and quantum Monte Carlo (QMC) calculations. △ Less

Submitted 25 October, 2003; originally announced October 2003.

Comments: Submitted to the "Transactions of the Materials Research Society of Japan"