Determination of the current-phase relation of an InAs 2DEG Josephson junction with a microwave resonator
Authors:
Zoltán Scherübl,
Máté Sütő,
Dávid Kóti,
Endre Tóvári,
Csaba Horváth,
Tamás Kalmár,
Bence Vasas,
Martin Berke,
Magdhi Kirti,
Giorgio Biasiol,
Szabolcs Csonka,
Péter Makk,
Gergő Fülöp
Abstract:
Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in de…
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Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in detail. We have investigated a Josephson junction where the weak link is a two-dimensional electron gas (2DEG) hosted in an InAs/InGaAs heterostructure grown on a GaAs substrate. We employed the in-situ epitaxially grown Al layer as superconducting contacts to form an rf SQUID, and also to create a microwave resonator for sensing the Josephson inductance. We determined the gate-dependent current-phase relation, and observed supercurrent interference in out-of-plane magnetic fields. With the application of an in-plane magnetic field, we induced asymmetry in the interference pattern, which was found to be anisotropic in the device plane.
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Submitted 28 June, 2024;
originally announced June 2024.
Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
Authors:
Máté Sütő,
Tamás Prok,
Péter Makk,
Magdhi Kirti,
Giorgio Biasiol,
Szabolcs Csonka,
Endre Tóvári
Abstract:
We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions…
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We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125 $μ$eV. Our results demonstrate the viability of this platform for hybrid topological superconductor devices.
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Submitted 17 March, 2023; v1 submitted 22 June, 2022;
originally announced June 2022.
