Showing 1–3 of 3 results for author: Sánchez-García, M A

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

Authors: S. Fernández-Garrido, J. Grandal, E. Calleja, M. A. Sánchez-García, D. López-Romero

Abstract: The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850°C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing und… ▽ More The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850°C).Two different growth regimes were identified: compact and nanocolumnar. A growth diagram was established as a function of growth parameters, exhibiting the transition between growth regimes, and showing under which growth conditions GaN cannot be grown due to thermal decomposition and Ga desorption. Present results indicate that adatoms diffusion length and the actual Ga/N ratio on the growing surface are key factors to achieve nanocolumnar growth. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (citation of published article) and may be found at J. Appl. Phys. 106, 126102 (2009) and may be found at https://doi.org/10.1063/1.3267151

Journal ref: JOURNAL OF APPLIED PHYSICS 106, 126102 (2009)

Effect of different buffer layers on the quality of InGaN layers grown on Si

Authors: V. J. Gómez, J. Grandal, A. Núñez-Cascajero, F. B. Naranjo, M. Varela, M. A. Sánchez-García, E. Calleja

Abstract: This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet e… ▽ More This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design. △ Less

Submitted 29 August, 2019; originally announced August 2019.

Journal ref: AIP Advances 8, 105026 (2018)

Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study

Authors: E Luna, J Grandal, E Gallardo, J M Calleja, M A Sánchez-García, E Calleja, A Trampert

Abstract: We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specific… ▽ More We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3 nm thick) around the InN NWs. The shell layer is composed of bcc-In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3 <110> || InN <11-20>. △ Less

Submitted 29 September, 2014; v1 submitted 17 December, 2013; originally announced December 2013.

Journal ref: Microsc. Microanal. 20, 1471-1478, 2014