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Materials Discovery in Combinatorial and High-throughput Synthesis and Processing: A New Frontier for SPM
Authors:
Boris N. Slautin,
Yongtao Liu,
Kamyar Barakati,
Yu Liu,
Reece Emery,
Seungbum Hong,
Astita Dubey,
Vladimir V. Shvartsman,
Doru C. Lupascu,
Sheryl L. Sanchez,
Mahshid Ahmadi,
Yunseok Kim,
Evgheni Strelcov,
Keith A. Brown,
Philip D. Rack,
Sergei V. Kalinin
Abstract:
For over three decades, scanning probe microscopy (SPM) has been a key method for exploring material structures and functionalities at nanometer and often atomic scales in ambient, liquid, and vacuum environments. Historically, SPM applications have predominantly been downstream, with images and spectra serving as a qualitative source of data on the microstructure and properties of materials, and…
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For over three decades, scanning probe microscopy (SPM) has been a key method for exploring material structures and functionalities at nanometer and often atomic scales in ambient, liquid, and vacuum environments. Historically, SPM applications have predominantly been downstream, with images and spectra serving as a qualitative source of data on the microstructure and properties of materials, and in rare cases of fundamental physical knowledge. However, the fast-growing developments in accelerated material synthesis via self-driving labs and established applications such as combinatorial spread libraries are poised to change this paradigm. Rapid synthesis demands matching capabilities to probe structure and functionalities of materials on small scales and with high throughput. SPM inherently meets these criteria, offering a rich and diverse array of data from a single measurement. Here, we overview SPM methods applicable to these emerging applications and emphasize their quantitativeness, focusing on piezoresponse force microscopy, electrochemical strain microscopy, conductive, and surface photovoltage measurements. We discuss the challenges and opportunities ahead, asserting that SPM will play a crucial role in closing the loop from material prediction and synthesis to characterization.
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Submitted 11 April, 2025; v1 submitted 5 January, 2025;
originally announced January 2025.
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Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films
Authors:
Simon Mellaerts,
Claudio Bellani,
Wei-Fan Hsu,
Alberto Binetti,
Koen Schouteden,
Maria Recaman-Payo,
Mariela Menghini,
Juan Rubio Zuazo,
Jesús López Sánchez,
Jin Won Seo,
Michel Houssa,
Jean-Pierre Locquet
Abstract:
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlat…
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Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing an abrupt vanishing of the quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively.
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Submitted 7 December, 2023;
originally announced December 2023.
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Physics-driven discovery and bandgap engineering of hybrid perovskites
Authors:
Sheryl L. Sanchez,
Elham Foadian,
Maxim Ziatdinov,
Jonghee Yang,
Sergei V. Kalinin,
Yongtao Liu,
Mahshid Ahmadi
Abstract:
The unique aspect of the hybrid perovskites is their tunability, allowing to engineer the bandgap via substitution. From application viewpoint, this allows creation of the tandem cells between perovskites and silicon, or two or more perovskites, with associated increase of efficiency beyond single-junction Schokley-Queisser limit. However, the concentration dependence of optical bandgap in the hyb…
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The unique aspect of the hybrid perovskites is their tunability, allowing to engineer the bandgap via substitution. From application viewpoint, this allows creation of the tandem cells between perovskites and silicon, or two or more perovskites, with associated increase of efficiency beyond single-junction Schokley-Queisser limit. However, the concentration dependence of optical bandgap in the hybrid perovskite solid solutions can be non-linear and even non-monotonic, as determined by the band alignments between endmembers, presence of the defect states and Urbach tails, and phase separation. Exploring new compositions brings forth the joint problem of the discovery of the composition with the desired band gap, and establishing the physical model of the band gap concentration dependence. Here we report the development of the experimental workflow based on structured Gaussian Process (sGP) models and custom sGP (c-sGP) that allow the joint discovery of the experimental behavior and the underpinning physical model. This approach is verified with simulated data sets with known ground truth, and was found to accelerate the discovery of experimental behavior and the underlying physical model. The d/c-sGP approach utilizes a few calculated thin film bandgap data points to guide targeted explorations, minimizing the number of thin film preparations. Through iterative exploration, we demonstrate that the c-sGP algorithm that combined 5 bandgap models converges rapidly, revealing a relationship in the bandgap diagram of MA1-xGAxPb(I1-xBrx)3. This approach offers a promising method for efficiently understanding the physical model of band gap concentration dependence in the binary systems, this method can also be extended to ternary or higher dimensional systems.
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Submitted 10 October, 2023;
originally announced October 2023.
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Order-disorder Peierls instability in the kagome metal (Cs,Rb)V$_3$Sb$_5$
Authors:
D. Subires,
A. Korshunov,
A. H. Said,
L. Sánchez,
Brenden R. Ortiz,
Stephen D. Wilson,
A. Bosak,
S. Blanco-Canosa
Abstract:
The nature of the charge density wave phases in the kagome metal compound AV$_3$Sb$_5$ has raised many questions and their origin is still under debate. Here, we combine diffuse scattering (DS) and inelastic x-ray scattering (IXS) to identify a 3-dimensional (3D) precursor of the charge order with propagation vector (0.5 0 0.5), which condenses into a 3D-CDW through a first order phase transition.…
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The nature of the charge density wave phases in the kagome metal compound AV$_3$Sb$_5$ has raised many questions and their origin is still under debate. Here, we combine diffuse scattering (DS) and inelastic x-ray scattering (IXS) to identify a 3-dimensional (3D) precursor of the charge order with propagation vector (0.5 0 0.5), which condenses into a 3D-CDW through a first order phase transition. The quasi-elastic critical scattering indicates that the dominant contribution to the diffuse precursor is the elastic central peak without phonon softening. However, the inelastic spectra show a small broadening of the Einstein-type phonon mode on approaching the phase transition. Our results point to the situation where the Fermi surface instability at the \textit{L} point is of order-disorder type with a critical growth of quasi-static domains. The results go beyond the classical weak-coupling Peierls transition dynamics and are discussed within models including strong-electron phonon coupling and non-adiabaticity.
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Submitted 23 February, 2023; v1 submitted 27 September, 2022;
originally announced September 2022.
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High-Field Magnetometry with Hyperpolarized Nuclear Spins
Authors:
Ozgur Sahin,
Erica de Leon Sanchez,
Sophie Conti,
Amala Akkiraju,
Paul Reshetikhin,
Emanuel Druga,
Aakriti Aggarwal,
Benjamin Gilbert,
Sunil Bhave,
Ashok Ajoy
Abstract:
Quantum sensors have attracted broad interest in the quest towards sub-micronscale NMR spectroscopy. Such sensors predominantly operate at low magnetic fields. Instead, however, for high resolution spectroscopy, the high-field regime is naturally advantageous because it allows high absolute chemical shift discrimination. Here we propose and demonstrate a high-field spin magnetometer constructed fr…
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Quantum sensors have attracted broad interest in the quest towards sub-micronscale NMR spectroscopy. Such sensors predominantly operate at low magnetic fields. Instead, however, for high resolution spectroscopy, the high-field regime is naturally advantageous because it allows high absolute chemical shift discrimination. Here we propose and demonstrate a high-field spin magnetometer constructed from an ensemble of hyperpolarized ${}^{13}C$ nuclear spins in diamond. The ${}^{13}C$ nuclei are initialized via Nitrogen Vacancy (NV) centers and protected along a transverse Bloch sphere axis for minute-long periods. When exposed to a time-varying (AC) magnetic field, they undergo secondary precessions that carry an imprint of its frequency and amplitude. The method harnesses long rotating frame ${}^{13}C$ sensor lifetimes $T_2^{\prime}{>}$20s, and their ability to be continuously interrogated. For quantum sensing at 7T and a single crystal sample, we demonstrate spectral resolution better than 100 mHz (corresponding to a frequency precision ${<}$1ppm) and single-shot sensitivity better than 70pT. We discuss the advantages of nuclear spin magnetometers over conventional NV center sensors, including deployability in randomly-oriented diamond particles and in optically scattering media. Since our technique employs densely-packed ${}^{13}C$ nuclei as sensors, it demonstrates a new approach for magnetometry in the "coupled-sensor" limit. This work points to interesting opportunities for microscale NMR chemical sensors constructed from hyperpolarized nanodiamonds and suggests applications of dynamic nuclear polarization (DNP) in quantum sensing.
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Submitted 21 December, 2021;
originally announced December 2021.
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Highly-Oriented Atomically Thin Ambipolar MoSe$_2$ Grown by Molecular Beam Epitaxy
Authors:
Ming-Wei Chen,
Dmitry Ovchinnikov,
Sorin Lazar,
Michele Pizzochero,
Michael Brian Whitwick,
Alessandro Surrente,
Michał Baranowski,
Oriol Lopez Sanchez,
Philippe Gillet,
Paulina Plochocka,
Oleg V. Yazyev,
Andras Kis
Abstract:
Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin Mo…
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Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin MoSe$_2$ on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe$_2$. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film.
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Submitted 30 May, 2017;
originally announced May 2017.
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Optospintronics in graphene via proximity coupling
Authors:
Ahmet Avsar,
Dmitrii Unuchek,
Jiawei Liu,
Oriol Lopez Sanchez,
Kenji Watanabe,
Takashi Taniguchi,
Barbaros Ozyilmaz,
Andras Kis
Abstract:
The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive dire…
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The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive direct optical spin injection schemes, graphenes intrinsically low spin orbit coupling strength and optical absorption place an obstacle in their realization. We overcome this challenge by creating sharp artificial interfaces between graphene and WSe2 monolayers. Application of a circularly polarized light activates the spin polarized charge carriers in the WSe2 layer due to its spin coupled valley selective absorption. These carriers diffuse into the superjacent graphene layer, transport over a 3.5 um distance, and are finally detected electrically using BN/Co contacts in a non local geometry. Polarization dependent measurements confirm the spin origin of the non local signal.
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Submitted 29 May, 2017;
originally announced May 2017.
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Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
Authors:
Oriol Lopez Sanchez,
Dmitry Ovchinnikov,
Shikhar Misra,
Adrien Allain,
Andras Kis
Abstract:
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devices, it is necessary to control and manipulate the charge density in these valleys, resulting in valley polarization. While this has been demonst…
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The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devices, it is necessary to control and manipulate the charge density in these valleys, resulting in valley polarization. While this has been demonstrated using optical excitation, generation of valley polarization in electronic devices without optical excitation remains difficult. Here, we demonstrate spin injection from a ferromagnetic electrode into a heterojunction based on monolayers of WSe2 and MoS2 and lateral transport of spin-polarized holes within the WSe2 layer. The resulting valley polarization leads to circularly polarized light emission which can be tuned using an external magnetic field. This demonstration of spin injection and magnetoelectronic control over valley polarization provides a new opportunity for realizing combined spin and valleytronic devices based on spin-valley locking in semiconducting TMDCs.
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Submitted 5 September, 2016;
originally announced September 2016.
