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Structure, Stability and Mechanical Properties of Boron-Rich Mo-B Phases: A Computational Study
Authors:
Dmitry V. Rybkovskiy,
Alexander G. Kvashnin,
Yulia A. Kvashnina,
Artem R. Oganov
Abstract:
Molybdenum borides were studied theoretically using first-principles calculations, empirical total energy model and global optimization techniques to determine stable crystal structures. Our calculations reveal the structures of known Mo-B phases, attaining close agreement with experiment. Following our developed lattice model, we describe in detail the crystal structure of boron-rich $MoB_x$ phas…
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Molybdenum borides were studied theoretically using first-principles calculations, empirical total energy model and global optimization techniques to determine stable crystal structures. Our calculations reveal the structures of known Mo-B phases, attaining close agreement with experiment. Following our developed lattice model, we describe in detail the crystal structure of boron-rich $MoB_x$ phases with 3<x<9 as the hexagonal $P6_3/mmc$-$MoB_3$ structure with Mo atoms partially replaced by triangular boron units. The most energetically stable arrangement of these $B_3$ units corresponds to their uniform distribution in the bulk of the crystal structure, which leads to the formation of a disordered nonstoichiometric phase, with ordering arising at compositions close to x=5 due to a strong repulsive interaction between neighboring $B_3$ units. The most energetically favorable structures of $MoB_x$ correspond to the compositions 4<x<5, with $MoB_5$ being the boron-richest stable phase. The estimated hardness of $MoB_5$ is 37-39 GPa, suggesting that the boron-rich phases are potentially superhard.
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Submitted 8 March, 2020; v1 submitted 12 July, 2019;
originally announced July 2019.
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Quasi-two-dimensional thermoelectricity in SnSe
Authors:
V. Tayari,
B. V. Senkovskiy,
D. Rybkovskiy,
N. Ehlen,
A. Fedorov,
C. -Y. Chen,
J. Avila,
M. Asensio,
A. Perucchi,
P. di Pietro,
L. Yashina,
I. Fakih,
N. Hemsworth,
M. Petrescu,
G. Gervais,
A. Grüneis,
T. Szkopek
Abstract:
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valle…
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Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications.
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Submitted 22 February, 2018;
originally announced February 2018.
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Atomically inspired $k \cdot p$ approach and valley Zeeman effect in transition metal dichalcogenide monolayers
Authors:
D. V. Rybkovskiy,
I. C. Gerber,
M. V. Durnev
Abstract:
We developed a six-band $k \cdot p$ model that describes the electronic states of monolayer transition metal dichalcogenides (TMDCs) in $K$-valleys. The set of parameters for the $k \cdot p$ model is uniquely determined by decomposing tight-binding (TB) models in the vicinity of $K^\pm$-points. First, we used TB models existing in literature to derive systematic parametrizations for different mate…
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We developed a six-band $k \cdot p$ model that describes the electronic states of monolayer transition metal dichalcogenides (TMDCs) in $K$-valleys. The set of parameters for the $k \cdot p$ model is uniquely determined by decomposing tight-binding (TB) models in the vicinity of $K^\pm$-points. First, we used TB models existing in literature to derive systematic parametrizations for different materials, including MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$. Then, by using the derived six-band $k \cdot p$ Hamiltonian we calculated effective masses, Landau levels, and the effective exciton $g$-factor $g_{X^0}$ in different TMDCs. We showed that TB parameterizations existing in literature result in small absolute values of $g_{X^0}$, which are far from the experimentally measured $g_{X^0} \approx -4$. To further investigate this issue we derived two additional sets of $k \cdot p$ parameters by developing our own TB parameterizations based on simultaneous fitting of ab-initio calculated, within the density functional (DFT) and $GW$ approaches, energy dispersion and the value of $g_{X^0}$. We showed that the change in TB parameters, which only slightly affects the dispersion of higher conduction and deep valence bands, may result in a significant increase of $|g_{X^0}|$, yielding close-to-experiment values of $g_{X^0}$. Such a high parameter sensitivity of $g_{X^0}$ opens a way to further improvement of DFT and TB models.
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Submitted 9 October, 2016;
originally announced October 2016.
