Showing 1–50 of 82 results for author: Russo, S

The $N_2V$ color center: a ubiquitous visible and near-infrared-II quantum emitter in nitrogen-doped diamond

Authors: Brett C. Johnson, Mitchell O. de Vries, Alexander J. Healey, Marco Capelli, Anjay Manian, Giannis Thalassinos, Amanda N. Abraham, Harini Hapuarachchi, Tingpeng Luo, Vadym Mochalin, Jan Jeske, Jared H. Cole, Salvy Russo, Brant C. Gibson, Alastair Stacey, Philipp Reineck

Abstract: Photoluminescent defects in diamond, like the nitrogen-vacancy (NV) color center, are at the forefront of emerging optical quantum technologies. Most emit in the visible and near-infrared spectral region below 1000 nm (NIR-I), limiting their applications in photonics, fiber communications, and biology. Here, we show that the nitrogen-vacancy-nitrogen ($N_2V$) center, which emits in the visible and… ▽ More Photoluminescent defects in diamond, like the nitrogen-vacancy (NV) color center, are at the forefront of emerging optical quantum technologies. Most emit in the visible and near-infrared spectral region below 1000 nm (NIR-I), limiting their applications in photonics, fiber communications, and biology. Here, we show that the nitrogen-vacancy-nitrogen ($N_2V$) center, which emits in the visible and near-infrared-II (NIR-II, 1000-1700 nm), is ubiquitous in as-synthesized and processed nitrogen-doped diamond from bulk samples to nanoparticles. We demonstrate that $N_2V$ is also present in commercially available state-of-the-art NV diamond sensing chips made via chemical vapor deposition (CVD). In high-pressure high-temperature (HPHT) diamonds, the photoluminescence (PL) intensity of both $N_2V$ charge states, $N_2V^0$ in the visible and $N_2V^-$ in the NIR-II, increases with increasing substitutional nitrogen concentration. We determine the PL lifetime of $N_2V^-$ to be 0.3 ns and compare a quantum optical and density functional theory model of the $N_2V^-$ with experimental PL spectra. Finally, we show that detonation nanodiamonds (DND) show stable PL in the NIR-II, which we attribute to the $N_2V$ color center, and use this NIR-II PL to image DNDs inside skin cells. Our results will contribute to the scientific and technological exploration and development of the $N_2V$ color center and inspire more research into its effect on other color centers in diamond. △ Less

Submitted 18 December, 2024; v1 submitted 15 December, 2024; originally announced December 2024.

Ordering kinetics with long-range interactions: interpolating between voter and Ising models

Authors: Federico Corberi, Salvatore dello Russo, Luca Smaldone

Abstract: We study the ordering kinetics of a generalization of the voter model with long-range interactions, the $p$-voter model, in one dimension. It is defined in terms of boolean variables $S_{i}$, agents or spins, located on sites $i$ of a lattice, each of which takes in an elementary move the state of the majority of $p$ other agents at distances $r$ chosen with probability $P(r)\propto r^{-α}$. For… ▽ More We study the ordering kinetics of a generalization of the voter model with long-range interactions, the $p$-voter model, in one dimension. It is defined in terms of boolean variables $S_{i}$, agents or spins, located on sites $i$ of a lattice, each of which takes in an elementary move the state of the majority of $p$ other agents at distances $r$ chosen with probability $P(r)\propto r^{-α}$. For $p=2$ the model can be exactly mapped onto the case with $p=1$, which amounts to the voter model with long-range interactions decaying algebraically. For $3\le p<\infty$, instead, the dynamics falls into the universality class of the one-dimensional Ising model with long-ranged coupling constant $J(r)=P(r)$ quenched to small finite temperatures. In the limit $p\to \infty$, a crossover to the (different) behavior of the long-range Ising model quenched to zero temperature is observed. Since for $ p > 3$ a closed set of differential equations cannot be found, we employed numerical simulations to address this case. △ Less

Submitted 3 September, 2024; v1 submitted 10 April, 2024; originally announced April 2024.

Comments: 16 pages, 5 figures

Journal ref: J. Stat. Mech: Theory and Experiment, 093206 (2004)

Embedding material graphs using the electron-ion potential: application to material fracture

Authors: Sherif Abdulkader Tawfik, Tri Minh Nguyen, Salvy P. Russo, Truyen Tran, Sunil Gupta, Svetha Venkatesh

Abstract: At the heart of the flourishing field of machine learning potentials are graph neural networks, where deep learning is interwoven with physics-informed machine learning (PIML) architectures. Various PIML models, upon training with density functional theory (DFT) material structure-property datasets, have achieved unprecedented prediction accuracy for a range of molecular and material properties. A… ▽ More At the heart of the flourishing field of machine learning potentials are graph neural networks, where deep learning is interwoven with physics-informed machine learning (PIML) architectures. Various PIML models, upon training with density functional theory (DFT) material structure-property datasets, have achieved unprecedented prediction accuracy for a range of molecular and material properties. A critical component in the learned graph representation of crystal structures in PIMLs is how the various fragments of the structure's graph are embedded in a neural network. Several of the state-of-art PIML models apply spherical harmonic functions. Such functions are based on the assumption that DFT computes the Coulomb potential of atom-atom interactions. However, DFT does not directly compute such potentials, but integrates the electron-atom potentials. We introduce the direct integration of the external potential (DIEP) methods which more faithfully reflects that actual computational workflow in DFT. DIEP integrates the external (electron-atom) potential and uses these quantities to embed the structure graph into a deep learning model. We demonstrate the enhanced accuracy of the DIEP model in predicting the energies of pristine and defective materials. By training DIEP to predict the potential energy surface, we show the ability of the model in predicting the onset of fracture of pristine and defective carbon nanotubes. △ Less

Submitted 27 September, 2024; v1 submitted 31 January, 2024; originally announced February 2024.

Comments: 14 pages, 4 figures

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Authors: Irfan H. Abidi, Sindhu Priya Giridhar, Jonathan O. Tollerud, Jake Limb, Aishani Mazumder, Edwin LH Mayes, Billy J. Murdoch, Chenglong Xu, Ankit Bhoriya, Abhishek Ranjan, Taimur Ahmed, Yongxiang Li, Jeffrey A. Davis, Cameron L. Bentley, Salvy P. Russo, Enrico Della Gaspera, Sumeet Walia

Abstract: Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defe… ▽ More Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS$_2$, while maintaining the structural integrity of the crystals remains a notable challenge. Here, we present a one-step, in-situ defect engineering approach for monolayer MoS$_2$ using a pressure dependent chemical vapour deposition (CVD) process. Monolayer MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$ (AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor states induced by the Vs defects. However, the n-doping induced by the Vs defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in our fabricated photodetectors compared to the AP-MoS$_2$ based devices. Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single-step CVD approach for in-situ defect engineering in monolayer MoS$_2$ and presents a pathway to control defects in other monolayer material systems. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: 29 pages, 5 figures

Excitons and singlet fission at hybrid inorganic-organic semiconductor interfaces

Authors: M. V. Klymenko, L. Z. Tan, S. P. Russo, J. H. Cole

Abstract: Excitons in organic crystalline semiconductors play a crucial role in the operation of optoelectronic devices such as organic solar cells, light-emitting diodes, and photodetectors. The excitonic properties of materials are dramatically affected by the presence of surfaces and interfaces. In this work, we investigate the influence of a neutral hydrogen-passivated 1x2 reconstructed (100) silicon su… ▽ More Excitons in organic crystalline semiconductors play a crucial role in the operation of optoelectronic devices such as organic solar cells, light-emitting diodes, and photodetectors. The excitonic properties of materials are dramatically affected by the presence of surfaces and interfaces. In this work, we investigate the influence of a neutral hydrogen-passivated 1x2 reconstructed (100) silicon substrate on excitons within the crystalline tetracene layer deposited on the top of it. Our findings reveal that singlet excitons in the contact tetracene layer are situated within the continuum of unbound Wannier-Mott excitonic states in silicon, with noteworthy hybridization between these states. Consequently, in the contact tetracene layer, all singlet excitons exhibit a pronounced interlayer charge transfer character, while the triplet exciton remains confined to the tetracene layer. This makes the singlet fission effect highly improbable for the contact tetracene layer. Additionally, the presence of the silicon substrate results in a modification of the singlet-triplet gap by 144 meV. This change is solely attributed to the hybridization with excitons in silicon, which influences the exchange energy. Our results show that the dynamic dielectric screening caused by the substrate does not impact the singlet-triplet gap but alters the exciton binding energies. △ Less

Submitted 24 October, 2023; originally announced October 2023.

Comments: 26 pages, 7 figures

All-electron $\mathrm{\textit{ab-initio}}$ hyperfine coupling of Si-, Ge- and Sn-vacancy defects in diamond

Authors: Akib Karim, Harish H. Vallabhapurapu, Chris Adambukulam, Arne Laucht, Salvy P. Russo, Alberto Peruzzo

Abstract: Colour centres in diamond are attractive candidates for numerous quantum applications due to their good optical properties and long spin coherence times. They also provide access to the even longer coherence of hyperfine coupled nuclear spins in their environment. While the NV centre is well studied, both in experiment and theory, the hyperfine couplings in the more novel centres (SiV, GeV, and Sn… ▽ More Colour centres in diamond are attractive candidates for numerous quantum applications due to their good optical properties and long spin coherence times. They also provide access to the even longer coherence of hyperfine coupled nuclear spins in their environment. While the NV centre is well studied, both in experiment and theory, the hyperfine couplings in the more novel centres (SiV, GeV, and SnV) are still largely unknown. Here we report on the first all-electron \textit{ab-initio} calculations of the hyperfine constants for SiV, GeV, and SnV defects in diamond, both for the respective defect atoms ($^{29}$Si, $^{73}$Ge, $^{117}$Sn, $^{119}$Sn), as well as for the surrounding $^{13}$C atoms. Furthermore, we calculate the nuclear quadrupole moments of the GeV defect. We vary the Hartree-Fock mixing parameter for Perdew-Burke-Ernzerhof (PBE) exchange correlation functional and show that the hyperfine couplings of the defect atoms have a linear dependence on the mixing percentage. We calculate the inverse dielectric constant to predict an \textit{ab-initio} mixing percentage. The final hyperfine coupling predictions are close to the experimental values available in the literature. Our results will help to guide future novel experiments on these defects. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 8 pages, 3 figures. Supplementary data (Tables S1-S12) in source

The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS$_2$ for Broadband Photodetection

Authors: Hossein Alijani, Philipp Reineck, Robert Komljenovic, Salvy Russo, Mei Xian Low, Sivacarendran Balendhran, Kenneth Crozier, Sumeet Walia, Geoff. R. Nash, Leslie Y. Yeo, Amgad R. Rezk

Abstract: Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging… ▽ More Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broadband wavelength excitation - especially beyond the material's nominal band gap - while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling - which we term the acoustophotoelectric effect - in SnS$_2$ that facilitates efficient photodetection through the application of 100-MHz-order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS$_2$, but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broadband photodetection beyond the visible light range, whilst maintaining pA-order dark currents - remarkably without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to eight orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS$_2$-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection. △ Less

Submitted 24 August, 2023; originally announced August 2023.

Naturally-meaningful and efficient descriptors: machine learning of material properties based on robust one-shot ab initio descriptors

Authors: Sherif Abdulkader Tawfik, Salvy P. Russo

Abstract: Establishing a data-driven pipeline for the discovery of novel materials requires the engineering of material features that can be feasibly calculated and can be applied to predict a material's target properties. Here we propose a new class of descriptors for describing crystal structures, which we term Robust One-Shot Ab initio (ROSA) descriptors. ROSA is computationally cheap and is shown to acc… ▽ More Establishing a data-driven pipeline for the discovery of novel materials requires the engineering of material features that can be feasibly calculated and can be applied to predict a material's target properties. Here we propose a new class of descriptors for describing crystal structures, which we term Robust One-Shot Ab initio (ROSA) descriptors. ROSA is computationally cheap and is shown to accurately predict a range of material properties. These simple and intuitive class of descriptors are generated from the energetics of a material at a low level of theory using an incomplete ab initio calculation. We demonstrate how the incorporation of ROSA descriptors in ML-based property prediction leads to accurate predictions over a wide range of crystals, amorphized crystals, metal-organic frameworks and molecules. We believe that the low computational cost and ease of use of these descriptors will significantly improve ML-based predictions. △ Less

Submitted 2 October, 2022; v1 submitted 2 March, 2022; originally announced March 2022.

Comments: 13 pages, accepted in Journal of Cheminformatics

A many-body perturbation theory approach to energy band alignment at the crystalline tetracene-silicon interface

Authors: M. V. Klymenko, L. Z. Tan, S. P. Russo, J. H. Cole

Abstract: Hybrid inorganic-organic semiconductor interfaces are of interest for new photovoltaic devices operating above the Shockley-Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tac… ▽ More Hybrid inorganic-organic semiconductor interfaces are of interest for new photovoltaic devices operating above the Shockley-Queisser limit. Predicting energy band alignment at the interfaces is crucial for their design, but represents a challenging problem due to the large scales of the system, the energy precision required and a wide range of physical phenomena that occur at the interface. To tackle this problem, we use many-body perturbation theory in the non-self-consistent GW approximation, orbital relaxation corrections for organic semiconductors, and line-up potential method for inorganic semiconductors which allows for tractable and accurate computing of energy band alignment in crystalline van-der-Waals hybrid inorganic-organic semiconductor interfaces. In this work, we study crystalline tetracene physisorbed on the clean hydrogen-passivated 1x2 reconstructed (100) silicon surface. Using this computational approach, we find that the energy band alignment is determined by an interplay of the mutual dynamic dielectric screening of two materials and the formation of a dipole layer due to a weak hybridization of atomic/molecular orbitals at the interface. We also emphasize the significant role of the exchange-correlation effects in predicting band offsets for the hybrid inorganic-organic semiconductor interfaces. △ Less

Submitted 10 June, 2022; v1 submitted 22 December, 2021; originally announced December 2021.

Journal ref: Adv. Theory Simul. 2022, 5, 2200413

Singlet exciton dynamics of perylene diimide and tetracene based hetero/homogeneous substrates via an \textit{ab initio} kinetic Monte Carlo model

Authors: Anjay Manian, Francesco Campaioli, Igor Lyskov, Jared H. Cole, Salvy P. Russo

Abstract: Luminescent solar concentrators (LSCs) are devices that trap a portion of the solar spectrum and funnel it towards photon harvesting devices. The modelling of LSCs at a quantum chemical level however, remains a challenge due to the complexity of exciton and photon dynamic modelling. This study examines singlet exciton dynamics occurring within a typical LSC device. To do this, we use a rejection-f… ▽ More Luminescent solar concentrators (LSCs) are devices that trap a portion of the solar spectrum and funnel it towards photon harvesting devices. The modelling of LSCs at a quantum chemical level however, remains a challenge due to the complexity of exciton and photon dynamic modelling. This study examines singlet exciton dynamics occurring within a typical LSC device. To do this, we use a rejection-free kinetic Monte Carlo method to predict diffusion lengths, diffusion coefficients, substrate anisotropy, and average exciton lifetimes of perylene diimide (PDI) and tetracene based substrates in the low concentration scheme. \textit{Ab initio} rate constants are computed using time-dependant density functional theory based methods. PDI type substrates are observed to display enhanced singlet exciton transport properties when compared to tetracene. Simulations show that substrates with dipole-aligned chromophores are characterised by anisotropic exciton diffusion, with slightly improved transport properties. Finally, a PDI-tetracene substrate is simulated for both disordered and dipole-aligned chromophore configurations. In this multi-dopant substrate transport is predominantly mediated by PDI due to the asymmetry in the transport rates between the two dyes considered. We conclude discussing the properties of multi-dopant substrates and how they can impact the design of next generation LSCs. △ Less

Submitted 27 September, 2021; originally announced October 2021.

Comments: 12 pages, 6 figures, 3 tables, Submitted to The Journal of Physical Chemistry

Bright $\mathrm{\textit{ab-initio}}$ photoluminescence of NV+ in diamond

Authors: Akib Karim, Igor Lyskov, Salvy P. Russo, Alberto Peruzzo

Abstract: The positively charged nitrogen vacancy (NV+) centre in diamond has been traditionally treated as a dark state due to the experimental lack of an optical signature. Recent computational studies have shown that it is possible for the NV+ defect to have an excited state transition equivalent to that of the negatively charged (NV-) centre, but no PL predictions have been reported so far. We report th… ▽ More The positively charged nitrogen vacancy (NV+) centre in diamond has been traditionally treated as a dark state due to the experimental lack of an optical signature. Recent computational studies have shown that it is possible for the NV+ defect to have an excited state transition equivalent to that of the negatively charged (NV-) centre, but no PL predictions have been reported so far. We report the first $\mathrm{\textit{ab-initio}}$ calculation showing that the NV+ center presents quantum emission, with zero phonon line at 765 nm and a non-zero transition dipole moment, approximately 4x smaller than the transition dipole moment of NV-. We calculate the energy levels of the multielectron states under time-dependent density functional theory (singlet and triplet E states), and using our recently developed frequency cutoff method, we predict the full PL spectrum. Our results suggest that this state cannot be considered intrinsically 'dark' and charge specific quenching mechanisms should be investigated as the cause of the lack of optical activity in experimental characterizations. △ Less

Submitted 25 August, 2021; v1 submitted 9 April, 2021; originally announced April 2021.

Accurate calculation of excitonic signatures in the absorption spectrum of BiSBr using semiconductor Bloch equations

Authors: Jamie M. Booth, Mike V. Klymenko, Jared H. Cole, Salvy P. Russo

Abstract: In order to realize the significant potential of optical materials such as metal halides, computational techniques which give accurate optical properties are needed, which can work hand-in-hand with experiments to generate high efficiency devices. In this work a computationally efficient technique based on semiconductor Bloch equations (SBEs) is developed and applied to the material BiSBr. This ap… ▽ More In order to realize the significant potential of optical materials such as metal halides, computational techniques which give accurate optical properties are needed, which can work hand-in-hand with experiments to generate high efficiency devices. In this work a computationally efficient technique based on semiconductor Bloch equations (SBEs) is developed and applied to the material BiSBr. This approach gives excellent agreement with the experimental optical gap, and also agrees closely with the excitonic stabilisation energy and the absorption spectrum computed using the far more computationally demanding \textit{ab initio} Bethe-Salpeter approach. The SBE method is a good candidate for theoretical spectroscopy on large- or low dimensional systems which are too computationally expensive for an \textit{ab initio} treatment. △ Less

Submitted 2 March, 2021; originally announced March 2021.

Comments: 8 pages, 3 figures

Anomalous Non-Hydrogenic Exciton Series in 2D Materials on High-$κ$ Dielectric Substrates

Authors: Anders C. Riis-Jensen, Morten N. Gjerding, Saverio Russo, Kristian S. Thygesen

Abstract: Engineering of the dielectric environment represents a powerful strategy to control the electronic and optical properties of two-dimensional (2D) materials without compromising their structural integrity. Here we show that the recent development of high-$κ$ 2D materials present new opportunities for dielectric engineering. By solving a 2D Mott-Wannier exciton model for WSe$_2$ on different substra… ▽ More Engineering of the dielectric environment represents a powerful strategy to control the electronic and optical properties of two-dimensional (2D) materials without compromising their structural integrity. Here we show that the recent development of high-$κ$ 2D materials present new opportunities for dielectric engineering. By solving a 2D Mott-Wannier exciton model for WSe$_2$ on different substrates using a screened electron-hole interaction obtained from first principles, we demonstrate that the exciton Rydberg series changes qualitatively when the dielectric screening within the 2D semiconductor becomes dominated by the substrate. In this regime, the distance dependence of the screening is reversed and the effective screening increases with exciton radius, which is opposite to the conventional 2D screening regime. Consequently, higher excitonic states become underbound rather than overbound as compared to the Hydrogenic Rydberg series. Finally, we derive a general analytical expression for the exciton binding energy of the entire 2D Rydberg series △ Less

Submitted 25 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. B 102, 201402 (2020)

Simulating the fabrication of aluminium oxide tunnel junctions

Authors: M. J. Cyster, J. S. Smith, N. Vogt, G. Opletal, S. P. Russo, J. H. Cole

Abstract: Aluminium oxide (AlO$_\mathrm{x}$) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility and reliability of qubits have been made possible through new circuit designs, there are still knowledge gaps in the relevant materials science. A better underst… ▽ More Aluminium oxide (AlO$_\mathrm{x}$) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility and reliability of qubits have been made possible through new circuit designs, there are still knowledge gaps in the relevant materials science. A better understanding of how fabrication conditions affect the density, uniformity, and elemental composition of the oxide barrier may lead to the development of lower noise and more reliable nanoelectronics and quantum computers. In this paper we use molecular dynamics to develop models of Al-AlO$_\mathrm{x}$-Al junctions by iteratively growing the structures with sequential calculations. With this approach we can see how the surface oxide grows and changes during the oxidation simulation. Dynamic processes such as the evolution of a charge gradient across the oxide, the formation of holes in the oxide layer, and changes between amorphous and semi-crystalline phases are observed. Our results are widely in agreement with previous work including reported oxide densities, self-limiting of the oxidation, and increased crystallinity as the simulation temperature is raised. The encapsulation of the oxide with metal evaporation is also studied atom by atom. Low density regions at the metal-oxide interfaces are a common feature in the final junction structures which persists for different oxidation parameters, empirical potentials, and crystal orientations of the aluminium substrate. △ Less

Submitted 14 May, 2020; v1 submitted 13 May, 2020; originally announced May 2020.

Comments: 14 pages, 16 figures

Journal ref: npj Quantum Inf 7, 12 (2021)

Scalable heterostructures produced through mechanical abrasion of van der Waals powders

Authors: Darren Nutting, Jorlandio F. Felix, Shin Dong-Wook, Adolfo de Sanctis, Monica F Craciun, Saverio Russo, Hong Chang, Nick Cole, Adam Woodgate, Ioannis Leontis, Henry A Fernández, Freddie Withers

Abstract: To fully exploit van der Waals materials and heterostructures, new mass-scalable production routes that are low cost but preserve the high electronic and optical quality of the single crystals are required. Here, we demonstrate an approach to realize a variety of functional heterostructures based on van der Waals nanocrystal films produced through the mechanical abrasion of bulk powders. Significa… ▽ More To fully exploit van der Waals materials and heterostructures, new mass-scalable production routes that are low cost but preserve the high electronic and optical quality of the single crystals are required. Here, we demonstrate an approach to realize a variety of functional heterostructures based on van der Waals nanocrystal films produced through the mechanical abrasion of bulk powders. Significant performance improvements are realized in our devices compared to those fabricated through ink-jet printing of nanocrystal dispersions. To highlight the simplicity and scalability of the technology a multitude of different functional heterostructure devices such as resistors, capacitors, photovoltaics as well as energy devices such as large-area catalyst coatings for hydrogen evolution reaction and multilayer heterostructures for triboelectric nanogenerators are shown. The simplicity of the device fabrication, scalability, and compatibility with flexible substrates makes this a promising technological route for up-scalable van der Waals heterostructures. △ Less

Submitted 28 November, 2019; originally announced November 2019.

An $\mathrm{\textit{ab-initio}}$ effective solid state photoluminescence by frequency constraint of cluster calculation

Authors: Akib Karim, Igor Lyskov, Salvy P. Russo, Alberto Peruzzo

Abstract: Measuring the photoluminescence of defects in crystals is a common experimental technique for analysis and identification. However, current theoretical simulations typically require the simulation of a large number of atoms to eliminate finite size effects, which discourages computationally expensive excited state methods. We show how to extract the room-temperature photoluminescence spectra of de… ▽ More Measuring the photoluminescence of defects in crystals is a common experimental technique for analysis and identification. However, current theoretical simulations typically require the simulation of a large number of atoms to eliminate finite size effects, which discourages computationally expensive excited state methods. We show how to extract the room-temperature photoluminescence spectra of defect centres in bulk from an $\mathrm{\textit{ab-initio}}$ simulation of a defect in small clusters. The finite size effect of small clusters manifests as strong coupling to low frequency vibrational modes. We find that removing vibrations below a cutoff frequency determined by constrained optimization returns the main features of the solid state photoluminescence spectrum. This strategy is illustrated for an NV$^{-}$ defect in diamond, presenting a connection between defects in solid state and clusters; the first vibrationally resolved $\mathrm{\textit{ab-initio}}$ photoluminescence spectrum of an NV$^{-}$ defect in a nanodiamond; and an alternative technique for simulating photoluminescence for solid state defects utilizing more accurate excited state methods. △ Less

Submitted 10 December, 2020; v1 submitted 20 September, 2019; originally announced September 2019.

Comments: Accepted for publication in the Journal of Applied Physics

First-Principles Calculation of Triplet Exciton Diffusion in Crystalline Poly($p$-phenylene vinylene)

Authors: Igor Lyskov, Egor Trushin, Ben Q. Baragiola, Timothy W. Schmidt, Jared H. Cole, Salvy P. Russo

Abstract: Understanding and controlling exciton transport is a strategic way to enhance the optoelectronic properties of high-performance organic devices. In this article we study triplet exciton migration in crystalline poly($p$-phenylene vinylene) polymer (PPV) using comprehensive electronic structure and quantum dynamical methods. We solve the coupled electron-nuclear dynamics for the triplet energy migr… ▽ More Understanding and controlling exciton transport is a strategic way to enhance the optoelectronic properties of high-performance organic devices. In this article we study triplet exciton migration in crystalline poly($p$-phenylene vinylene) polymer (PPV) using comprehensive electronic structure and quantum dynamical methods. We solve the coupled electron-nuclear dynamics for the triplet energy migrating between two neighboring Frenkel sites in J- and H-aggregate arrangements. From the two-site model we extract key parameters for use with a master-equation approach that allows us to treat nanosize systems where time-dependent Schrödinger equation becomes intractable. We calculate the transient exciton density evolution and determine the diffusion constants along the principal crystal axes of the PPV. The triplet diffusion is characterized by two distinctive components: fast intrachain, and slow interchain. At room temperature the interchain diffusion coefficients are found to be $D_a=0.89\cdot10^{-2}$ cm$^2$s$^{-1}$ and $D_b=1.49\cdot10^{-2}$ cm$^2$s$^{-1}$ along the respective $\bar{a}$- and $\bar{b}$-axes, and the intrachain is $D_c=3.03$ cm$^2$s$^{-1}$ along the fast $\bar{c}$-axis. The exceptionally high exciton mobility along the $π$-conjugated backbone facilitates rapid triplet migration over long distances. Our results can be utilized in the design of efficient energy conversion and light-emitting devices with desired solid-state properties. △ Less

Submitted 28 October, 2019; v1 submitted 16 July, 2019; originally announced July 2019.

Comments: Final version after corrections and improvements

Journal ref: J. Phys. Chem. C 123, 44, 26831-26841 (2019)

Electrically tuneable exciton energy exchange between spatially separated 2-dimensional semiconductors in a microcavity

Authors: Henry A. Fernandez, Freddie Withers, Saverio Russo, William L. Barnes

Abstract: Electrical control over the energy exchange between exciton states mediated by cavity-polaritons at room temperature is demonstrated. Spatially separated field effect transistors based on monolayers of WS$_2$ and MoS$_2$ are placed in a tuneable Fabry-Pérot microcavity. This device is specially designed for the formation of exciton-polaritons that combine the two exciton species and a tuneable cav… ▽ More Electrical control over the energy exchange between exciton states mediated by cavity-polaritons at room temperature is demonstrated. Spatially separated field effect transistors based on monolayers of WS$_2$ and MoS$_2$ are placed in a tuneable Fabry-Pérot microcavity. This device is specially designed for the formation of exciton-polaritons that combine the two exciton species and a tuneable cavity mode. It is further shown that the tuning of the free carrier density in the WS$_2$ film leads to a strong modulation of the Rabi splitting that modifies the excitonic and photonic nature of exciton-polaritons. Electrical control of polaritonic devices may lead to technological applications using switchable quantum states. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Comments: Submitted

The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions

Authors: M. J. Cyster, J. S. Smith, J. A. Vaitkus, N. Vogt, S. P. Russo, J. H. Cole

Abstract: Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic… ▽ More Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic structure on the electrical response of aluminium oxide barriers must be understood. We create three-dimensional atomistic models of aluminium oxide tunnel junctions and simulate their electronic transport properties with the non-equilibrium Green's function formalism. Increasing the oxide density is found to produce an exponential increase in the junction resistance. In highly oxygen-deficient junctions we observe metallic channels which decrease the resistance significantly. Computing the charge and current density within the junction shows how variation in the local potential landscape can create channels which dominate conduction. An atomistic approach provides a better understanding of these transport processes and guides the design of junctions for nanoelectronics applications. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. Research 2, 013110 (2020)

Electrically tuneable exciton-polaritons through free electron doping in monolayer WS$_2$ microcavities

Authors: Henry A. Fernandez, Freddie Withers, Saverio Russo, William L. Barnes

Abstract: We demonstrate control over light-matter coupling at room temperature combining a field effect transistor (FET) with a tuneable optical microcavity. Our microcavity FET comprises a monolayer tungsten disulfide WS$_2$ semiconductor which was transferred onto a hexagonal boron nitride flake that acts as a dielectric spacer in the microcavity, and as an electric insulator in the FET. In our tuneable… ▽ More We demonstrate control over light-matter coupling at room temperature combining a field effect transistor (FET) with a tuneable optical microcavity. Our microcavity FET comprises a monolayer tungsten disulfide WS$_2$ semiconductor which was transferred onto a hexagonal boron nitride flake that acts as a dielectric spacer in the microcavity, and as an electric insulator in the FET. In our tuneable system, strong coupling between excitons in the monolayer WS$_2$ and cavity photons can be tuned by controlling the cavity length, which we achieved with excellent stability, allowing us to choose from the second to the fifth order of the cavity modes. Once we achieve the strong coupling regime, we then modify the oscillator strength of excitons in the semiconductor material by modifying the free electron carrier density in the conduction band of the WS$_2$. This enables strong Coulomb repulsion between free electrons, which reduces the oscillator strength of excitons until the Rabi splitting completely disappears. We controlled the charge carrier density from 0 up to 3.2 $\times$ 10$^{12}$ cm$^{-2}$, and over this range the Rabi splitting varies from a maximum value that depends on the cavity mode chosen, down to zero, so the system spans the strong to weak coupling regimes. △ Less

Submitted 28 May, 2019; originally announced May 2019.

Comments: Accepted for publication

Journal ref: Advanced Optical Materials (2019)

Laser writable high-K dielectric for van der Waals nano-electronics

Authors: N. Peimyoo, M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou, A. P. Rooney, S. J. Haigh, S. Russo, M. F. Craciun, F. Withers

Abstract: Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-function… ▽ More Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-functional few nm thick high-k oxide within van der Waals devices without degrading the properties of the neighbouring 2D materials. This is achieved by in-situ laser oxidation of embedded few layer HfS2 crystals. The resultant oxide is found to be in the amorphous phase with a dielectric constant of k~15 and break-down electric fields in the range of 0.5-0.6 V/nm. This transformation allows for the creation of a variety of fundamental nano-electronic and opto-electronic devices including, flexible Schottky barrier field effect transistors, dual gated graphene transistors as well as vertical light emitting and detecting tunnelling transistors. Furthermore, upon dielectric break-down, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching between two resistance states. This allows for the creation of resistive switching random access memories (ReRAMs). We believe that this method of embedding a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multi-functional van der Waals devices. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: Accepted for publication in Science Advances

Strain-engineering of twist-angle in graphene/hBN superlattice devices

Authors: Adolfo De Sanctis, Jake D. Mehew, Saad Alkhalifa, Freddie Withers, Monica F. Craciun, Saverio Russo

Abstract: The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape wit… ▽ More The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials. △ Less

Submitted 4 December, 2018; v1 submitted 9 October, 2018; originally announced October 2018.

Comments: 25 pages, 5 figures

Journal ref: Nano Lett. 2018, 18, 12, 7919-7926

Graphene-based light sensing: fabrication, characterisation, physical properties and performance

Authors: Adolfo De Sanctis, Jake D. Mehew, Monica F. Craciun, Saverio Russo

Abstract: Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction… ▽ More Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl$_3$ is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of detectors with high gain and responsivity. In this work we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse in these materials, their performance and possible future paths of investigation. △ Less

Submitted 13 September, 2018; originally announced September 2018.

Comments: Review Paper, 30 Pages, 7 figures and 2 tables

Journal ref: Materials 11, 1762 (2018)

Yang-Mills Structure for Electron-Phonon Interactions

Authors: Jamie M. Booth, Salvy P. Russo

Abstract: This work presents a method of grouping the electron spinors and the acoustic phonon modes of polar crystals such as metal oxides into an SU(2) gauge theory. The gauge charge is the electron spin, which is assumed to couple to the transverse acoustic phonons on the basis of spin ordering phenomena in crystals such as V$_{2}$O$_{3}$ and VO$_{2}$, while the longitudinal mode is neutral. A generaliza… ▽ More This work presents a method of grouping the electron spinors and the acoustic phonon modes of polar crystals such as metal oxides into an SU(2) gauge theory. The gauge charge is the electron spin, which is assumed to couple to the transverse acoustic phonons on the basis of spin ordering phenomena in crystals such as V$_{2}$O$_{3}$ and VO$_{2}$, while the longitudinal mode is neutral. A generalization the Peierls mechanism is presented based on the discrete gauge invariance of crystals and the corresponding Ward-Takahashi identity. The introduction of a band index violates the Ward-Takahashi identity for interband transitions resulting in a longitudinal component appearing in the upper phonon band. Thus both the spinors and the vector bosons acquire mass and a crystal with an electronic band gap and optical phonon modes results. In the limit that the coupling of bosons charged under the SU(2) gauge group goes to zero, breaking the electron U(1) symmetry recovers the BCS mechanism. In the limit that the neutral boson decouples, a Cooper instability mediated by spin-wave exchange results from symmetry breaking, i.e. unconventional superconductivity mediated by magnetic interactions. △ Less

Submitted 30 August, 2018; v1 submitted 17 August, 2018; originally announced August 2018.

Comments: 9 pages, 4 figures, V2 fixes a numbers of errors and typos from a somewhat rushed previous submission

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

Authors: Nicola J. Townsend, Iddo Amit, Monica F. Craciun, Saverio Russo

Abstract: The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional solid state devices, they present a wide range of exciting new properties that… ▽ More The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional solid state devices, they present a wide range of exciting new properties that is bound to become a crucial ingredient in the future of electronics. To utilise these properties for the prospect of electronics in general, and long-wavelength-based photodetectors in particular, the Schottky barriers formed upon contact with a metal and the contact resistance that arises at these interfaces have to be measured and controlled. We present experimental evidence for the formation of Schottky barriers as low as 10 meV between MoTe2 and metal electrodes. By varying the electrode work functions, we demonstrate that Fermi level pinning due to metal induced gap states at the interfaces occurs at 0.14 eV above the valence band maximum. In this configuration, thermionic emission is observed for the first time at temperatures between 40 K and 75 K. Finally, we discuss the ability to tune the barrier height using a gate electrode. △ Less

Submitted 12 March, 2018; originally announced March 2018.

Comments: 26 pages, 13 figures, 2D Materials (2018)

Novel circuit design for high-impedance and non-local electrical measurements of two-dimensional materials

Authors: Adolfo De Sanctis, Jake D. Mehew, Saad Alkhalifa, Callum P. Tate, Ashley White, Adam R. Woodgate, Monica F. Craciun, Saverio Russo

Abstract: Two-dimensional materials offer a novel platform for the development of future quantum technologies. However, the electrical characterisation of topological insulating states, non-local resistance and bandgap tuning in atomically-thin materials, can be strongly affected by spurious signals arising from the measuring electronics. Common-mode voltages, dielectric leakage in the coaxial cables and th… ▽ More Two-dimensional materials offer a novel platform for the development of future quantum technologies. However, the electrical characterisation of topological insulating states, non-local resistance and bandgap tuning in atomically-thin materials, can be strongly affected by spurious signals arising from the measuring electronics. Common-mode voltages, dielectric leakage in the coaxial cables and the limited input impedance of alternate-current amplifiers can mask the true nature of such high-impedance states. Here, we present an optical isolator circuit which grants access to such states by electrically decoupling the current-injection from the voltage-sensing circuitry. We benchmark our apparatus against two state-of-the-art measurements: the non-local resistance of a graphene Hall bar and the transfer characteristic of a WS2 field-effect transistor. Our system allows the quick characterisation of novel insulating states in two-dimensional materials with potential applications in future quantum technologies. △ Less

Submitted 30 January, 2018; originally announced January 2018.

Comments: 16 Pages, 5 figures + Supplementary Material

Journal ref: Review of Scientific Instruments 89, 024705 (2018)

Strain-engineered inverse charge-funnelling in layered semiconductors

Authors: Adolfo De Sanctis, Iddo Amit, Steven P. Hepplestone, Monica F. Craciun, Saverio Russo

Abstract: The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications, from electronic circuits to synapses in neural cells. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovolta… ▽ More The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications, from electronic circuits to synapses in neural cells. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS2. We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells. △ Less

Submitted 29 January, 2018; originally announced January 2018.

Comments: 20 Pages, 4 Figures + Supplementary Material

Journal ref: Nature Communications 9, 1652 (2018)

Band structure and giant Stark effect in two-dimensional transition-metal dichalcogenides

Authors: M. Javaid, Salvy P. Russo, K. Kalantar-Zadeh, Andrew D. Greentree, Daniel W. Drumm

Abstract: We present a comprehensive study of the electronic structures of 192 configurations of 39 stable, layered, transition-metal dichalcogenides using density-functional theory. We show detailed investigations of their monolayer, bilayer, and trilayer structures' valence-band maxima, conduction-band minima, and band gap responses to transverse electric fields. We also report the critical fields where s… ▽ More We present a comprehensive study of the electronic structures of 192 configurations of 39 stable, layered, transition-metal dichalcogenides using density-functional theory. We show detailed investigations of their monolayer, bilayer, and trilayer structures' valence-band maxima, conduction-band minima, and band gap responses to transverse electric fields. We also report the critical fields where semiconductor-to-metal phase transitions occur. Our results show that band gap engineering by applying electric fields can be an effective strategy to modulate the electronic properties of transition-metal dichalcogenides for next-generation device applications. △ Less

Submitted 8 November, 2017; originally announced November 2017.

Comments: 18 pages, 7 figures

Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime

Authors: Gareth F. Jones, Rui M. Pinto, Adolfo De Sanctis, V. Karthik Nagareddy, C. David Wright, Helena Alves, Monica F. Craciun, Saverio Russo

Abstract: Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have s… ▽ More Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have shown inferior performance compared to inorganic semiconductors. Here, we utilize the long-range order in rubrene single crystals to engineer organic semiconductor-graphene phototransistors surpassing previously reported photo-gating efficiencies by one order of magnitude. Phototransistors based upon these interfaces are spectrally selective to visible wavelengths and, through photoconductive gain mechanisms, achieve responsivity as large as 10^7 A/W and a detectivity of 1.5 10^9 Jones at room temperature. These findings point towards implementing low-cost, flexible materials for amplified imaging at ultra-low light levels. △ Less

Submitted 3 October, 2017; v1 submitted 2 October, 2017; originally announced October 2017.

Comments: Published in Advanced Materials. Supplementary material available at http://onlinelibrary.wiley.com/doi/10.1002/adma.201702993/full

An Ab Initio Description of the Mott Metal-Insulator Transition of M$_{2}$ Vanadium Dioxide

Authors: Jamie M. Booth, Daniel W. Drumm, Phil S. Casey, Suresh K. Bhargava, Jackson S. Smith, Salvy P. Russo

Abstract: Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated. Similarly to the M$_{1}$ structure, the Peierls pairing of the M$_{2}$ structure results in bonding-antibonding splitting which stabilizes states in which the… ▽ More Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated. Similarly to the M$_{1}$ structure, the Peierls pairing of the M$_{2}$ structure results in bonding-antibonding splitting which stabilizes states in which the majority of the charge density resides on the Peierls chain. This is insufficient to drop all of the bonding states into the lower Hubbard band however. An antiferroelectric distortion on the neighboring vanadium chain is required to reduce the repulsion felt by the Peierls bonding states by increasing the distances between the vanadium and apical oxygen atoms, lowering the potential overlap thus reducing the charge density accumulation and thereby the electronic repulsion. The antibonding states are simultaneously pushed into the upper Hubbard band. The data indicate that sufficiently modified GW calculations are able to describe the interplay of the atomic and electronic structures occurring in Mott metal-insulator transitions. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Comments: 10 Pages, 7 Figures

High-Mobility and High-Optical Quality Atomically Thin WS2

Authors: Francesco Reale, Pawel Palczynski, Iddo Amit, Gareth F. Jones, Jake D. Mehew, Agnes Bacon, Na Ni, Peter C. Sherrell, Stefano Agnoli, Monica F. Craciun, Saverio Russo, Cecilia Mattevi

Abstract: The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal qualit… ▽ More The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used topotactic transformation of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes. △ Less

Submitted 24 July, 2017; originally announced July 2017.

Extraordinary linear dynamic range in laser-defined functionalized graphene photodetectors

Authors: Adolfo De Sanctis, Gareth F. Jones, Dominique J. Wehenkel, Francisco Bezares, Frank H. L. Koppens, Monica F. Craciun, Saverio Russo

Abstract: Graphene-based photodetectors have demonstrated mechanical flexibility, large operating bandwidth, and broadband spectral response. However, their linear dynamic range (LDR) is limited by graphene's intrinsichot-carrier dynamics, which causes deviation from a linear photoresponse at low incident powers. At the same time, multiplication of hot carriers causes the photoactive region to be smeared ov… ▽ More Graphene-based photodetectors have demonstrated mechanical flexibility, large operating bandwidth, and broadband spectral response. However, their linear dynamic range (LDR) is limited by graphene's intrinsichot-carrier dynamics, which causes deviation from a linear photoresponse at low incident powers. At the same time, multiplication of hot carriers causes the photoactive region to be smeared over distances of a few micro-meters, limiting the use of graphene in high-resolution applications. We present a novel method for engineer-ing photoactive junctions in FeCl3-intercalated graphene using laser irradiation. Photocurrent measured at these planar junctions shows an extraordinary linear response with an LDR value at least 4500 times larger than that of other graphene devices (44 dB) while maintaining high stability against environmental contamination without the need for encapsulation. The observed photoresponse is purely photovoltaic, demonstrating complete quenching of hot-carrier effects. These results pave the way toward the design of ultrathin photode-tectors with unprecedented LDR for high-definition imaging and sensing. △ Less

Submitted 31 May, 2017; originally announced June 2017.

Comments: 44 pages, includes supplementary

Journal ref: Sci. Adv. 3, e1602617 (2017)

Fast and Highly Sensitive Ionic Polymer Gated WS$_2$-Graphene Photodetectors

Authors: Jake D. Mehew, Selim Unal, Elias Torres Alonso, Gareth F. Jones, Saad Fadhil Ramadhan, Monica F. Craciun, Saverio Russo

Abstract: The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited by long-lived charge traps and impractical strategies, e.g. the use of large gate voltage pulses, have been employed to achieve bandwidths suitable for applicat… ▽ More The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited by long-lived charge traps and impractical strategies, e.g. the use of large gate voltage pulses, have been employed to achieve bandwidths suitable for applications, such as video-frame-rate imaging. Here, we report atomically thin graphene-WS$_2$ heterostructure photodetectors encapsulated in an ionic polymer, which are uniquely able to operate at bandwidths up to 1.5 kHz, whilst maintaining internal gain as large as $10^6$. Highly mobile ions and a nanometre scale Debye length of the ionic polymer are used to screen charge traps and tune the Fermi level of graphene over an unprecedented range at the interface with WS$_2$. We observe a responsivity $R=10^6$ A W$^{-1}$ and detectivity $D^*=3.8\times10^{11}$ Jones, approaching that of single photon counters. The combination of both high responsivity and fast response times makes these photodetectors suitable for video-frame-rate imaging applications. △ Less

Submitted 26 April, 2017; v1 submitted 25 April, 2017; originally announced April 2017.

Comments: 10 pages, 4 figures. To appear in Advanced Materials

Role of Charge Traps in the Performance of Atomically-Thin Transistors

Authors: Iddo Amit, Tobias J. Octon, Nicola J. Townsend, Francesco Reale, C. David Wright, Cecilia Mattevi, Monica F. Craciun, Saverio Russo

Abstract: Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed… ▽ More Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient opto-electronic devices. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Comments: 25 pages, 7 figures, including the supporting information

Journal ref: Advanced Materials Early View (2017), 1605598

Ab initio calculation of energy levels for phosphorus donors in silicon

Authors: J. S. Smith, A. Budi, M. C. Per, N. Vogt, D. W. Drumm, L. C. L. Hollenberg, J. H. Cole, S. P. Russo

Abstract: The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electron's ground state is found to have a form that is similar to an atomic s orbital, with an effective… ▽ More The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using density functional theory. The wavefunction of the donor electron's ground state is found to have a form that is similar to an atomic s orbital, with an effective Bohr radius of 1.8 nm. The corresponding binding energy of this state is found to be 41 meV, which is in good agreement with the currently accepted value of 45.59 meV. We also calculate the energies of the excited 1s(T) and 1s(E) states, finding them to be 32 and 31 meV respectively. These results constitute the first ab initio confirmation of the s manifold energy levels for phosphorus donors in silicon. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: 9 pages, 6 figures

An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

Authors: Adolfo De Sanctis, Gareth F. Jones, Nicola J. Townsend, Monica F. Craciun, Saverio Russo

Abstract: Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and pho… ▽ More Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, Raman, absorption and PL spectroscopy in one single set-up. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs) and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide range of complementary opto-electronic and spectroscopy characterization techniques is demonstrated in a single compact unit. △ Less

Submitted 26 April, 2017; v1 submitted 21 September, 2016; originally announced September 2016.

Comments: To appear in Review of Scientific Instruments (2017). 29 pages, 9 figures

Journal ref: Review of Scientific Instruments 88, 055102 (2017)

Surface-gate-defined single-electron-transistor in a MoS$_{2}$ bilayer

Authors: M. Javaid, Daniel W. Drumm, Salvy P. Russo, Andrew D. Greentree

Abstract: We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum e… ▽ More We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials. △ Less

Submitted 28 August, 2016; originally announced August 2016.

Homogeneously bright, flexible and foldable lighting devices with functionalised graphene electrodes

Authors: Elias Torres Alonso, George Karkera, Gareth Francis Jones, Monica Felicia Craciun, Saverio Russo

Abstract: Alternating current electroluminescent technology allows the fabrication of large area, flat and flexible lights. Presently the maximum size of a continuous panel is limited by the high resistivity of available transparent electrode materials causing a visible gradient of brightness. Here, we demonstrate that the use of the best known transparent conductor FeCl$_{3}$-intercalated few-layer graphen… ▽ More Alternating current electroluminescent technology allows the fabrication of large area, flat and flexible lights. Presently the maximum size of a continuous panel is limited by the high resistivity of available transparent electrode materials causing a visible gradient of brightness. Here, we demonstrate that the use of the best known transparent conductor FeCl$_{3}$-intercalated few-layer graphene boosts the brightness of electroluminescent devices by 49$\%$ compared to pristine graphene. Intensity gradients observed for high aspect ratio devices are undetectable when using these highly conductive electrodes. Flat lights on polymer substrates are found to be resilient to repeated and flexural strains. △ Less

Submitted 17 June, 2016; originally announced June 2016.

Comments: Published on ACS Materials and Interfaces

Correlating the Energetics and Atomic Motions of the Metal-Insulator Transition of M1 Vanadium Dioxide

Authors: Jamie M Booth, Daniel W. Drumm, Phil S. Casey, Aaron J. Seeber, Suresh K. Bhargava, Salvy P. Russo

Abstract: Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic mot… ▽ More Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices. △ Less

Submitted 3 June, 2016; v1 submitted 15 February, 2016; originally announced February 2016.

Comments: 11 Pages, 8 Figures

Journal ref: Scientific Reports 6, 26391 (2016)

Critical current scaling in long diffusive graphene-based Josephson junctions

Authors: Chung-Ting Ke, Ivan V. Borzenets, Anne W. Draelos, Francois Amet, Yuriy Bomze, Gareth Jones, Monica Craciun, Saverio Russo, Michihisa Yamamoto, Seigo Tarucha, Gleb Finkelstein

Abstract: We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while t… ▽ More We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions. △ Less

Submitted 9 February, 2016; v1 submitted 9 February, 2016; originally announced February 2016.

Comments: 4 pages main text, 4 pages supplementary, 7 figures

Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate

Authors: Antonio Di Bartolomeo, Filippo Giubileo, Laura Iemmo, Francesco Romeo, Saverio Russo, Selim Unal, Maurizio Passacantando, Valentina Grossi, Anna Maria Cucolo

Abstract: We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, re… ▽ More We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1uA/um between graphene flakes. These findings are essential for the miniaturization of atomically thin devices. △ Less

Submitted 30 January, 2016; v1 submitted 18 January, 2016; originally announced January 2016.

Comments: Research article, 8 pages, 5 figures

Journal ref: Applied Physics Letters 109, 023510 (2016)

A 3D investigation of delocalised oxygen two-level defects in Josephson junctions

Authors: Timothy C. DuBois, Salvy P. Russo, Jared H. Cole

Abstract: Environmental two-level systems (TLS) have been identified as significant decoherence sources in Josephson junction (JJ) based circuits. For such quantum devices to be functional, the removal or control of the TLS is a necessity. Understanding the microscopic origins of the 'strongly coupled' TLS type is one current path of investigation to that end. The delocalized oxygen model suggests the atomi… ▽ More Environmental two-level systems (TLS) have been identified as significant decoherence sources in Josephson junction (JJ) based circuits. For such quantum devices to be functional, the removal or control of the TLS is a necessity. Understanding the microscopic origins of the 'strongly coupled' TLS type is one current path of investigation to that end. The delocalized oxygen model suggests the atomic position of an oxygen atom is spatially delocalized in the oxide forming the JJ barrier. In this report we extend this model from its previous 2+1D construction to a complete 3D description using a Wick-rotated time-dependent Schrodinger equation to solve for time-independent solutions in three dimensions. We compute experimentally observable parameters for phase qubits and compare the results to the 2+1D framework. We devise a Voronoi classification scheme to investigate oxygen atoms delocalizing within strained and non-strained crystalline lattices, as well as realistic atomic positions a JJ amorphous tunnel barrier constructed in previous density functional studies. △ Less

Submitted 21 August, 2015; originally announced August 2015.

Comments: 9 Pages, 8 Figures

Electronic transport in Si:P delta-doped wires

Authors: J. S. Smith, D. W. Drumm, A. Budi, J. A. Vaitkus, J. H. Cole, S. P. Russo

Abstract: Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transp… ▽ More Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of delta-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of delta-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a delta-doped wire, which we find to be at least 4.6 nm. △ Less

Submitted 14 July, 2015; originally announced July 2015.

Comments: 13 pages, 11 figures

Electronic structure of tungsten-doped vanadium dioxide

Authors: Jamie M. Booth, Daniel W. Drumm, Phil S. Casey, Jackson S. Smith, Salvy P. Russo

Abstract: A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for m… ▽ More A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for maintaining a gap, theoretical evidence for this has been very difficult to obtain due to the complexity of the many-body problem involved. In this work we use GW calculations modified to include strong local $\textbf{k}$-space interactions to investigate the changes in band structure from tungsten doping. We find that the combination of carrier doping and the experimentally observed structural defects introduced by inclusion of tungsten are consistent with a change from band-like to Mott-insulating behavior. △ Less

Submitted 18 September, 2017; v1 submitted 1 July, 2015; originally announced July 2015.

Comments: 7 pages, 4 Figures

High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition

Authors: Thomas H. Bointon, Matthew D. Barnes, Saverio Russo, Monica F. Craciun

Abstract: Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive research on the synthesis of (1) high quality and (2) low cost graphene. Hot-wall chemical vapour deposition (CVD) is one of the most competitive growth methods… ▽ More Emerging flexible and wearable technologies such as healthcare electronics and energy-harvest devices could be transformed by the unique properties of graphene. The vision for a graphene-driven industrial revolution is motivating intensive research on the synthesis of (1) high quality and (2) low cost graphene. Hot-wall chemical vapour deposition (CVD) is one of the most competitive growth methods, but its long processing times are incompatible with production lines. Here we demonstrate the growth of high quality monolayer graphene using a technique that is 100 times faster than standard hot-wall CVD, resulting in 99% reduction in production costs. A thorough complementary study of Raman spectroscopy, atomic force microscopy, scanning electron microscopy and electrical magneto-transport measurements shows that our cold wall CVD-grown graphene is of comparable quality to that of natural graphene. Finally, we demonstrate the first transparent and flexible graphene capacitive touch-sensor that could enable the development of artificial skin for robots. △ Less

Submitted 29 June, 2015; originally announced June 2015.

Comments: Bointon, T. H., Barnes, M. D., Russo, S. and Craciun, M. F. (2015), High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition. Adv. Mater.. doi:10.1002/adma.201501600

Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene

Authors: T. Khodkov, I Khrapach, M. F. Craciun, S. Russo

Abstract: Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in optical spectroscopy. Here we report the first direct observation of the electric field tunable energy gap in electronic transport experiments on doubly gated suspe… ▽ More Few layer graphene systems such as Bernal stacked bilayer and rhombohedral (ABC-) stacked trilayer offer the unique possibility to open an electric field tunable energy gap. To date, this energy gap has been experimentally confirmed in optical spectroscopy. Here we report the first direct observation of the electric field tunable energy gap in electronic transport experiments on doubly gated suspended ABC-trilayer graphene. From a systematic study of the non-linearities in current \textit{versus} voltage characteristics and the temperature dependence of the conductivity we demonstrate that thermally activated transport over the energy-gap dominates the electrical response of these transistors. The estimated values for energy gap from the temperature dependence and from the current voltage characteristics follow the theoretically expected electric field dependence with critical exponent $3/2$. These experiments indicate that high quality few-layer graphene are suitable candidates for exploring novel tunable THz light sources and detectors. △ Less

Submitted 16 June, 2015; originally announced June 2015.

Comments: Nano Letters, 2015 just accepted, DOI: 10.1021/acs.nanolett.5b00772

Approaching magnetic ordering in graphene materials by FeCl$_3$ intercalation

Authors: T. H. Bointon, I. Khrapach, R. Yakimova, A. V. Shytov, M. F. Craciun, S. Russo

Abstract: We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ Ω/sq$ to $\approx 16 \ Ω/sq$ at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstra… ▽ More We show the successful intercalation of large area (1 cm$^2$) epitaxial few-layer graphene grown on 4H-SiC with FeCl$_3$. Upon intercalation the resistivity of this system drops from an average value of $\approx 200 \ Ω/sq$ to $\approx 16 \ Ω/sq$ at room temperature. The magneto-conductance shows a weak localization feature with a temperature dependence typical of graphene Dirac fermions demonstrating the decoupling into parallel hole gases of each carbon layer composing the FeCl$_3$ intercalated structure. The phase coherence length ($\approx 1.2 μ$m at 280 mK) decreases rapidly only for temperatures higher than the 2-D magnetic ordering in the intercalant layer while it tends to saturate for temperatures lower than the antiferromagnetic ordering between the planes of FeCl$_3$ molecules providing the first evidence for magnetic ordering in the extreme two-dimensional limit of graphene. △ Less

Submitted 16 June, 2015; originally announced June 2015.

Comments: Nano Lett, volume 14, no. 4, pages 1751-1755

Unforeseen high temperature and humidity stability of FeCl$_3$ intercalated few layer graphene

Authors: D. J. Wehenkel, T. H. Bointon, T. Booth, P. Boggild, M. F. Craciun, S. Russo

Abstract: We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforeseen stability of this transparent… ▽ More We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforeseen stability of this transparent conductor to a relative humidity up to $100 \%$ at room temperature for 25 days, to a temperature up to $150\,^\circ$C in atmosphere and up to a temperature as high as $620\,^\circ$C in vacuum, that is more than twice higher than the temperature at which the intercalation is conducted. The stability of FeCl$_3$ intercalated few-layer graphene together with its unique values of low square resistance and high optical transparency, makes this material an attractive transparent conductor in future flexible electronic applications. △ Less

Submitted 16 June, 2015; originally announced June 2015.

Comments: Scientific Reports, volume 5, article no. 7609

High Efficiency CVD Graphene-lead (Pb) Cooper Pair Splitter

Authors: I. V. Borzenets, Y. Shimazaki, G. F. Jones, M. F. Craciun, S. Russo, Y. Yamamoto, S. Tarucha

Abstract: We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphene is used as the central superconducting electrode as well as QD output channels, unlike previous designs where a conventional superconductor was used with tunnel barriers to the quantum dots (QD) of a different materia… ▽ More We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphene is used as the central superconducting electrode as well as QD output channels, unlike previous designs where a conventional superconductor was used with tunnel barriers to the quantum dots (QD) of a different material. Superconductivity in graphene is induced via the proximity effect, thus resulting in both a large measured superconducting gap $Δ=0.5$meV, and a long coherence length $ξ=200$nm. The graphene-graphene, flat, two dimensional, superconductor-QD interface lowers the capacitance of the quantum dots, thus increasing the charging energy $E_C$ (in contrast to previous devices). As a result we measure a visibility of up to 96% and a splitting efficiency of up to 62%. Finally, the devices utilize graphene grown by chemical vapor deposition allowing for a standardized device design with potential for increased complexity. △ Less

Submitted 16 June, 2015; v1 submitted 15 June, 2015; originally announced June 2015.

Comments: 5 pages, 4 figures

Electron transport of WS$_2$ transistors in a hexagonal boron nitride dielectric environment

Authors: Freddie Withers, Thomas Hardisty Bointon, David Christopher Hudson, Monica Felicia Craciun, Saverio Russo

Abstract: We present the first study of the intrinsic electrical properties of WS$_2$ transistors fabricated with two different dielectric environments WS$_2$ on SiO$_2$ and WS$_2$ on h-BN/SiO$_2$, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS$_2$ with various thicknesses from single- up to four-layers and over a wide… ▽ More We present the first study of the intrinsic electrical properties of WS$_2$ transistors fabricated with two different dielectric environments WS$_2$ on SiO$_2$ and WS$_2$ on h-BN/SiO$_2$, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS$_2$ with various thicknesses from single- up to four-layers and over a wide temperature range from 300K down to 4.2 K shows that disorder intrinsic to WS$_2$ is currently the limiting factor of the electrical properties of this material. These results shed light on the role played by extrinsic factors such as charge traps in the oxide dielectric thought to be the cause for the commonly observed small values of charge carrier mobility in transition metal dichalcogenides. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: Sci Rep, volume 4, DOI:10.1038/srep04967, Supporting information online