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Electron States Emerging at Magnetic Domain Wall of magnetic semiconductors with strong Rashba effect
Authors:
I. P. Rusinov,
V. N. Men'shov,
E. V. Chulkov
Abstract:
In the present article, we explore the electron properties of magnetic semiconductors with strong Rashba spin-orbit coupling taking into account the presence of domain walls at the sample surface. We consider antiphase domain walls separating domains with both in-plane and out-of-plane magnetization as well as noncollinear domain walls. First, we propose the model and unveil general physical pictu…
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In the present article, we explore the electron properties of magnetic semiconductors with strong Rashba spin-orbit coupling taking into account the presence of domain walls at the sample surface. We consider antiphase domain walls separating domains with both in-plane and out-of-plane magnetization as well as noncollinear domain walls. First, we propose the model and unveil general physical picture of phenomenon supported by analytical arguments. Further, we perform a comprehensive tight-binding numerical calculations to provide a profound understanding of our findings. A domain wall separating domains with any polarization directions is demonstrated to host a bound state. What is more interesting is that we predict that either of these domain walls also induces one-dimensional resonant state. The surface energy spectrum and spin polarization of the states are highly sensitive to the magnetization orientation in the adjacent domains. The spectral broadening and the spatial localization of the resonant state depend significantly on a relation between the Rashba splitting and the exchange one. Our estimation shows that chiral conducting channels associated with the long-lived resonant states can emerge along the magnetic domain walls and can be accessed experimentally at the surface of BiTeI doped with transition metal atoms.
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Submitted 22 August, 2024;
originally announced August 2024.
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Interplay between exchange split Dirac and Rashba-type surface states in MnBi$_2$Te$_4$/BiTeI interface
Authors:
N. L. Zaitsev,
I. P. Rusinov,
T. V. Menshchikova,
E. V. Chulkov
Abstract:
Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We found significant difference in electronic properties at different types of contact between substrate and the overlayer. While the case of Te-Te interface forms n…
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Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We found significant difference in electronic properties at different types of contact between substrate and the overlayer. While the case of Te-Te interface forms natural expansion of the substrate, when Dirac cone state locates mostly in the polar overlayer region and undergoes slight exchange splitting, Te-I contact is the source of four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state are lifted, what produces Hall response in transport regime. We believe, our findings provide new opportunities to construct novel type spintronic devices.
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Submitted 15 August, 2022;
originally announced August 2022.
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Hydrogen-impurity induced unconventional magnetism in semiconducting molybdenum ditelluride
Authors:
Jonas A. Krieger,
Daniel Tay,
Igor P. Rusinov,
Sourabh Barua,
Pabitra K. Biswas,
Lukas Korosec,
Thomas Prokscha,
Thorsten Schmitt,
Niels B. M. Schröter,
Tian Shang,
Toni Shiroka,
Andreas Suter,
Geetha Balakrishnan,
Evgueni V. Chulkov,
Vladimir N. Strocov,
Zaher Salman
Abstract:
Layered transition-metal dichalcogenides are proposed as building blocks for van der Waals (vdW) heterostructures due to their graphene-like two dimensional structure. For this purpose, a magnetic semiconductor could represent an invaluable component for various spintronics and topotronics devices. Here, we combine different local magnetic probe spectroscopies with angle-resolved photoemission and…
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Layered transition-metal dichalcogenides are proposed as building blocks for van der Waals (vdW) heterostructures due to their graphene-like two dimensional structure. For this purpose, a magnetic semiconductor could represent an invaluable component for various spintronics and topotronics devices. Here, we combine different local magnetic probe spectroscopies with angle-resolved photoemission and density-functional theory calculations to show that 2H-MoTe2 is on the verge of becoming magnetic. Our results present clear evidence that the magnetism can be "switched on" by a hydrogen-like impurity. We also show that this magnetic state survives up to the free surface region, demonstrating the material's potential applicability as a magnetic component for thin-film heterostructures.
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Submitted 7 June, 2022;
originally announced June 2022.
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New spin-polarized electron source based on alkali-antimonide photocathode
Authors:
V. S. Rusetsky,
V. A. Golyashov,
S. V. Eremeev,
D. A. Kustov,
I. P. Rusinov,
T. S. Shamirzaev,
A. V. Mironov,
A. Yu. Demin,
O. E. Tereshchenko
Abstract:
New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructure is designed as a spin-polarized electron source in combination with the Al$_{0.11}$Ga$_{0.89}$As target as a spin-detector with spatial resolution.…
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New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructure is designed as a spin-polarized electron source in combination with the Al$_{0.11}$Ga$_{0.89}$As target as a spin-detector with spatial resolution. In the Na$_2$KSb/Cs$_3$Sb photocathode, spin-dependent photoemission properties were established through detection of high degree of photoluminescence polarization and high polarization of the photoemitted electrons. It was found that the multi-alkali photocathode can provide electron beams with emittance very close to the limits imposed by the electron thermal energy. The vacuum tablet-type sources of spin-polarized electrons have been proposed for accelerators, that can exclude the construction of the photocathode growth chambers for photoinjectors.
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Submitted 7 May, 2022;
originally announced May 2022.
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Spectral features of magnetic domain walls on surface of 3D topological insulators
Authors:
I. P. Rusinov,
V. N. Men'shov,
E. V. Chulkov
Abstract:
We present a theoretical investigation of electron states hosted by magnetic domain walls on the 3D topological insulator surface. The consideration includes the domain walls with distinct vectorial and spatial textures. The study is carried out on the basis of the Hamiltonian for quasi-relativistic fermions by using a continual approach and tight-binding calculations. We derive the spectral chara…
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We present a theoretical investigation of electron states hosted by magnetic domain walls on the 3D topological insulator surface. The consideration includes the domain walls with distinct vectorial and spatial textures. The study is carried out on the basis of the Hamiltonian for quasi-relativistic fermions by using a continual approach and tight-binding calculations. We derive the spectral characteristics and spatial localization of the the one-dimensional low-energy states appearing at the domain walls. The antiphase domain walls are shown to generate the topologically protected chiral states with linear dispersion, the group velocity and spin-polarization direction of which depend on an easy axis orientation. In the case of an easy plane anisotropy, we predict a realization of a dispersionless state, flat band in the energy spectrum, that is spin-polarized along the surface normal. Modification of the surface states in the multi-domain case, which is approximated by a periodic set of domain walls, is described as well. We find that the magnetic domain walls with complex internal texture, such as Néel-like or Bloch-like walls, also host the topological states, although their spectrum and spin structure can be changed compared with the sharp wall case.
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Submitted 20 May, 2021;
originally announced May 2021.
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Topological magnetic materials of the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ van der Waals compounds family
Authors:
S. V. Eremeev,
I. P. Rusinov,
Yu. M. Koroteev,
A. Yu. Vyazovskaya,
M. Hoffmann,
P. M. Echenique,
A. Ernst,
M. M. Otrokov,
E. V. Chulkov
Abstract:
Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the f…
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Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the first three members of the family, i.e. MnSb$_2$Te$_4$, ($n=0$), MnSb$_4$Te$_7$, ($n=1$), and MnSb$_6$Te$_{10}$, ($n=2$), are 3D antiferromagnetic topological insulators (AFMTIs), while for $n \geq 3$ a special phase is formed, in which a nontrivial topological order coexists with a partial magnetic disorder in the system of the decoupled 2D ferromagnets, whose magnetizations point randomly along the third direction. Furthermore, due to a weak interlayer exchange coupling, these materials can be field-driven into the FM Weyl semimetal ($n=0$) or FM axion insulator states ($n \geq 1$). Finally, in two dimensions we reveal these systems to show intrinsic quantum anomalous Hall and AFM axion insulator states, as well as quantum Hall state, achieved under external magnetic field, but without Landau levels. Our results provide a solid computational proof that MnSb$_2$Te$_4$, is not topologically trivial as was previously believed that opens possibilities of realization of a wealth of topologically-nontrivial states in the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family.
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Submitted 4 February, 2021;
originally announced February 2021.
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Domain wall induced spin-polarized flat bands in antiferromagnetic topological insulators
Authors:
Evgeniy K. Petrov,
Vladimir N. Men'shov,
Igor P. Rusinov,
Martin Hoffmann,
Arthur Ernst,
Mikhail M. Otrokov,
Vitalii K. Dugaev,
Tatiana V. Menshchikova,
Evgueni V. Chulkov
Abstract:
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have b…
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A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological insulators. Using first-principles material design we suggest a family of intrinsic antiferromagnetic topological insulators with an in-plane sublattice magnetization and a high Néel temperature. Such systems can host domain walls in a natural manner. For these materials, we demonstrate the existence of spin-polarized flat bands in the vicinity of the Fermi level and discuss their properties and potential applications.
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Submitted 17 January, 2020;
originally announced January 2020.
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Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family
Authors:
I. I. Klimovskikh,
M. M. Otrokov,
D. Estyunin,
S. V. Eremeev,
S. O. Filnov,
A. Koroleva,
E. Shevchenko,
V. Voroshnin,
I. P. Rusinov,
M. Blanco-Rey,
M. Hoffmann,
Z. S. Aliev,
M. B. Babanly,
I. R. Amiraslanov,
N. A. Abdullayev,
V. N. Zverev,
A. Kimura,
O. E. Tereshchenko,
K. A. Kokh,
L. Petaccia,
G. Di Santo,
A. Ernst,
P. M. Echenique,
N. T. Mamedov,
A. M. Shikin
, et al. (1 additional authors not shown)
Abstract:
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and ma…
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Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m \ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the \MBT\, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.
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Submitted 25 October, 2019;
originally announced October 2019.
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Possible Experimental Realization of a Basic Z2 Topological Semimetal
Authors:
Erik Haubold,
Alexander Fedorov,
Igor P. Rusinov,
Tatiana V. Menshchikova,
Viola Duppel,
Daniel Friedrich,
Florian Pielnhofer,
Richard Weihrich,
Arno Pfitzner,
Alexander Zeugner,
Anna Isaeva,
Setti Thirupathaiah,
Yevhen Kushnirenko,
Emile Rienks,
Timur Kim,
Evgueni V. Chulkov,
Bernd Büchner,
Sergey V. Borisenko
Abstract:
We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-reso…
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We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion in the \textit{T}-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron- and hole-like carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material's application potential.
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Submitted 4 December, 2018;
originally announced December 2018.
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Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnBi_2Te_4}$ films
Authors:
Mikhail M. Otrokov,
Igor P. Rusinov,
María Blanco-Rey,
Martin Hoffmann,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Arthur Ernst,
Pedro M. Echenique,
Andrés Arnau,
Evgueni V. Chulkov
Abstract:
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple lay…
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Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of $\mathrm{MnBi_2Te_4}$ is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide bandgap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, $\mathrm{MnBi_2Te_4}$ is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.
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Submitted 11 October, 2018;
originally announced October 2018.
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Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects
Authors:
Mikhail M. Otrokov,
Tatiana V. Menshchikova,
Maia G. Vergniory,
Igor P. Rusinov,
Alexandra Yu. Vyazovskaya,
Yury M. Koroteev,
Gustav Bihlmayer,
Arthur Ernst,
Pedro M. Echenique,
Andrés Arnau,
Evgueni V. Chulkov
Abstract:
An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these…
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An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap.
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Submitted 29 September, 2018;
originally announced October 2018.
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Prediction and observation of the first antiferromagnetic topological insulator
Authors:
Mikhail M. Otrokov,
Ilya I. Klimovskikh,
Hendrik Bentmann,
Dmitry Estyunin,
Alexander Zeugner,
Ziya S. Aliev,
Sebastian Gass,
Anja U. B. Wolter,
Alexandra V. Koroleva,
Alexander M. Shikin,
María Blanco-Rey,
Martin Hoffmann,
Igor P. Rusinov,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Yury M. Koroteev,
V. M. Kuznetsov,
F. Freyse,
J. Sánchez-Barriga,
Imamaddin R. Amiraslanov,
Mahammad B. Babanly,
Nazim T. Mamedov,
Nadir A. Abdullayev,
Vladimir N. Zverev,
Alexey Alfonsov
, et al. (19 additional authors not shown)
Abstract:
Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of d…
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Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of doping nonmagnetic TIs with 3d transition metal elements, however, such an approach leads to strongly inhomogeneous magnetic and electronic properties of these materials, restricting the observation of important effects to very low temperatures. Finding intrinsic MTI, i.e. a stoichiometric well-ordered magnetic compound, could be an ideal solution to these problems, but no such material was observed to date. Here, using density functional theory we predict and further confirm by means of structural, transport, magnetic, angle- and spin-resolved photoemission spectroscopy measurements the realization of the antiferromagnetic (AFM) TI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($Θ$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S = ΘT_{1/2}$, giving rise to the $Z_2$ topological classification of AFM insulators. We find $Z_2 = 1$ for MnBi$_2$Te$_4$, which confirms its topologically nontrivial nature. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ exhibits a giant bandgap in the topological surface state as evidenced by ab initio calculations and photoemission measurements. These results culminate almost a decade-long search of an AFMTI, predicted in 2010. Furthermore, MnBi$_2$Te$_4$ is the first intrinsic magnetic TI realized experimentally.
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Submitted 21 January, 2025; v1 submitted 19 September, 2018;
originally announced September 2018.
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Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures
Authors:
Florian Pielnhofer,
Tatiana V. Menshchikova,
Igor P. Rusinov,
Alexander Zeugner,
Irina Yu. Sklyadneva,
Rolf Heid,
Klaus-Peter Bohnen,
Pavlo Golub,
Alexey I. Baranov,
Eugeni V. Chulkov,
Arno Pfitzner,
Michael Ruckd,
Anna Isaeva
Abstract:
State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by covalent interactions within a 3D periodic structure, is predicted to constitute a 3D strong topological insulato…
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State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by covalent interactions within a 3D periodic structure, is predicted to constitute a 3D strong topological insulator with Z2 = 1;(111) (primitive cell, rhombohedral setting) in the structural family of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. The host structure GaGeTe is a long-known bulk semiconductor; the "heavy", isostructural analogues InSnTe and GaSnTe are predicted to be dynamically stable. Spin-orbit interaction in InSnTe opens a small topological band gap with inverted gap edges that are mainly composed of the In-5s and Te-5p states. Our simulations classify GaSnTe as a semimetal with topological properties, whereas the verdict for GaGeTe is not conclusive and urges further experimental verification. AXTe family structures can be regarded as stacks of 2D layered cut-outs from a zincblende-type lattice and are composed by elements that are broadly used in modern semiconductor devices; hence they represent an accessible, attractive alternative for applications in spintronics. The layered nature of AXTe should facilitate exfoliation of its hextuple layers and manufacture of heterostuctures.
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Submitted 24 April, 2017;
originally announced April 2017.
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Pressure effects on crystal and electronic structure of bismuth tellurohalides
Authors:
I. P. Rusinov,
T. V. Menshchikova,
I. Yu. Sklyadneva,
R. Heid,
K. -P. Bohnen,
E. V. Chulkov
Abstract:
We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized through the formation of an intermediate phase, a Weyl semimetal, that leads to modification of surface state dispersions. In the topologically trivial phase, the…
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We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized through the formation of an intermediate phase, a Weyl semimetal, that leads to modification of surface state dispersions. In the topologically trivial phase, the surface states exhibit a Bychkov-Rashba type dispersion. The Weyl semimetal phase exists in a narrow pressure interval of 0.2 GPa. After the Weyl semimetal--TI transition occurs, the surface electronic structure is characterized by gapless states with linear dispersion. The peculiarities of the surface states modification under pressure depend on the band-bending effect. We have also calculated the frequencies of Raman active modes for BiTeI in the proposed high-pressure crystal phases in order to compare them with available experimental data. Unlike BiTeI, in BiTeBr and BiTeCl the topological phase transition does not occur. In BiTeBr, the crystal structure changes with pressure but the phase remains a trivial one. However, the transition appears to be possible if the low-pressure crystal structure is retained. In BiTeCl under pressure, the topological phase does not appear up to 18 GPa due to a relatively large band gap width in this compound.
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Submitted 19 July, 2016;
originally announced July 2016.
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Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides
Authors:
I. P. Rusinov,
I. A. Nechaev,
S. V. Eremeev,
C. Friedrich,
S. Blügel,
E. V. Chulkov
Abstract:
We report on many-body corrections to one-electron energy spectra of bulk bismuth tellurohalides---materials that exhibit a giant Rashba-type spin splitting of the band-gap edge states. We show that the corrections obtained in the one-shot $GW$ approximation noticeably modify the spin-orbit-induced spin splitting evaluated within density functional theory. We demonstrate that taking into account m…
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We report on many-body corrections to one-electron energy spectra of bulk bismuth tellurohalides---materials that exhibit a giant Rashba-type spin splitting of the band-gap edge states. We show that the corrections obtained in the one-shot $GW$ approximation noticeably modify the spin-orbit-induced spin splitting evaluated within density functional theory. We demonstrate that taking into account many-body effects is crucial to interpret the available experimental data.
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Submitted 25 April, 2013; v1 submitted 20 March, 2013;
originally announced March 2013.
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Rashba split surface states in BiTeBr
Authors:
S. V. Eremeev,
I. P. Rusinov,
I. A. Nechaev,
E. V. Chulkov
Abstract:
Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces…
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Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin-orbit splitting. The Te-terminated surface-state spin splitting has the Rashba-type behavior with the coupling parameter α_R ~ 2 eVÅ.
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Submitted 4 February, 2013;
originally announced February 2013.
