Structural, Vibrational, and Electronic Behavior of Two GaGeTe Polymorphs under compression
Authors:
Enrico Bandiello,
Samuel Gallego-Parra,
Akun Liang,
Juan Ángel Sans,
Vanesa Cuenca-Gotor,
Estelina Lora da Silva,
Rosario Vilaplana,
Plácida. Rodríguez-Hernández,
Alfonso Muñoz,
Daniel Diaz-Anichtchenko,
Catalin Popescu,
Frederico Gil Alabarse,
Carlos Rudamas,
Čestmír Drašar,
Alfredo Segura,
Daniel Errandonea,
Francisco Javier Manjón
Abstract:
GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $α$-GaGeTe ($R\bar{3}m$) and $β$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes at high pressure. Both polytypes show anisotropic compressibility and two phase transitions…
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GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $α$-GaGeTe ($R\bar{3}m$) and $β$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes at high pressure. Both polytypes show anisotropic compressibility and two phase transitions, above 7 and 15 GPa, respectively, as confirmed by XRD and Raman spectroscopy measurements. Although the nature of the high-pressure phases is not confirmed, comparison with other chalcogenides and total-energy calculations allow us to propose possible high-pressure phases for both polytypes with an increase in coordination for Ga and Ge atoms from 4 to 6. In particular, the simplification of the X-ray patterns for both polytypes above 15 GPa suggests a transition to a structure of relatively higher symmetry than the original one. This result is consistent with the rocksalt-like high-pressure phases observed in parent III-VI semiconductors, such as GaTe, GaSe, and InSe. Pressure-induced amorphization is observed upon pressure release. The electronic band structures of $α$-GaGeTe and $β$-GaGeTe and their pressure dependence also show similarities to III-VI semiconductors, thus suggesting that the germanene-like sublayer induces a semimetallic character in both GaGeTe polytypes. Above 3 GPa, both polytypes lose their topological features, due to the opening of the direct band gap, while the reduction of the interlayer space increases the thermal conductivity at high pressure.
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Submitted 3 July, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
