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Terahertz Spin-Light Coupling in Proximitized Dirac Materials
Authors:
Konstantin S. Denisov,
Igor V. Rozhansky,
Sergio O. Valenzuela,
Igor Žutić
Abstract:
The two-dimensional (2D) materials are highly susceptible to the influence of their neighbors, thereby enabling the design by proximity phenomena. We reveal a remarkable terahertz (THz) spin-light interaction in 2D Dirac materials that arises from magnetic and spin-orbital proximity effects. The dynamical realization of the spin-charge conversion, the electric dipole spin resonance (EDSR), of Dira…
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The two-dimensional (2D) materials are highly susceptible to the influence of their neighbors, thereby enabling the design by proximity phenomena. We reveal a remarkable terahertz (THz) spin-light interaction in 2D Dirac materials that arises from magnetic and spin-orbital proximity effects. The dynamical realization of the spin-charge conversion, the electric dipole spin resonance (EDSR), of Dirac electrons displays distinctive THz features, upon emerging spin-pseudospin proximity terms in the Hamiltonian. To capture the effect of fast pseudospin dynamics on the electron spin, we develop a mean-field theory and complement it with a quantum-mechanical treatment. As a specific example, we investigate the THz response of a single graphene layer proximitized by a magnetic substrate. Our analysis demonstrates a strong enhancement and anomalous polarization structure of the THz-light absorption which can enable THz detection and efficient generation and control of spins in spin-based quantum devices. The identified coupled spin-pseudospin dynamics is not limited to EDSR and may influence a broad range of optical, transport, and ultrafast phenomena.
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Submitted 28 October, 2024;
originally announced October 2024.
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Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure
Authors:
Igor V. Rozhansky,
Ina V. Kalitukha,
Grigorii S. Dimitriev,
Olga S. Ken,
Mikhail V. Dorokhin,
Boris N. Zvonkov,
Dmitri S. Arteev,
Nikita S. Averkiev,
Vladimir L. Korenev
Abstract:
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurement…
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Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows to resolve the dynamic FM proximity effect on a nanometer scale. The method can be generalized on various systems including rapidly developing 2D van der Waals materials.
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Submitted 17 April, 2023;
originally announced April 2023.
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Colossal topological Hall effect at the transition between isolated and lattice-phase interfacial skyrmions
Authors:
M. Raju,
A. P. Petrović,
A. Yagil,
K. S. Denisov,
N. K. Duong,
B. Göbel,
E. Şaşıoğlu,
O. M. Auslaender,
I. Mertig,
I. V. Rozhansky,
C. Panagopoulos
Abstract:
The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary betw…
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The topological Hall effect is used extensively to study chiral spin textures in various materials. However, the factors controlling its magnitude in technologically-relevant thin films remain uncertain. Using variable temperature magnetotransport and real-space magnetic imaging in a series of Ir/Fe/Co/Pt heterostructures, here we report that the chiral spin fluctuations at the phase boundary between isolated skyrmions and a disordered skyrmion lattice result in a power-law enhancement of the topological Hall resistivity by up to three orders of magnitude. Our work reveals the dominant role of skyrmion stability and configuration in determining the magnitude of the topological Hall effect.
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Submitted 17 May, 2021;
originally announced May 2021.
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Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems
Authors:
M. A. Rakitskii,
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev
Abstract:
In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads t…
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In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, namely the exchange interaction assisted skew-scattering and the conversion of the SHE induced transverse spin current to the charge one owing to the difference between the spin-up and spin-down conductivities. We propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization independent terms in the Hall voltage.
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Submitted 17 November, 2020;
originally announced November 2020.
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Chiral spin structure of electron gas in systems with magnetic skyrmions
Authors:
L. A. Yung,
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the…
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The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the spin density response follows the magnetization profile of the skyrmion. In the opposite case of a small skyrmion the emerging spin structure of 2DEG has a characteristic size of $k_F^{-1}$ and the response becomes non-local, it can be viewed as chiral Friedel oscillations. At that, the emerging spin structure of the oscillations appears to be more complex than that of the skyrmion itself.
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Submitted 15 November, 2019;
originally announced November 2019.
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Chiral spin ordering of electron gas in solids with broken time reversal symmetry
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
In this work we manifest that an electrostatic disorder in conducting systems with broken time reversal symmetry universally leads to a chiral ordering of the electron gas giving rise to skyrmion-like textures in spatial distribution of the electron spin density. We describe a microscopic mechanism underlying the formation of the equilibrium chiral spin textures in two-dimensional systems with spi…
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In this work we manifest that an electrostatic disorder in conducting systems with broken time reversal symmetry universally leads to a chiral ordering of the electron gas giving rise to skyrmion-like textures in spatial distribution of the electron spin density. We describe a microscopic mechanism underlying the formation of the equilibrium chiral spin textures in two-dimensional systems with spin-orbit interaction and exchange spin splitting. We have obtained analytical expressions for spin-density response functions and have analyzed both local and non-local spin response to electrostatic perturbations for systems with parabolic-like and Dirac electron spectra. With the proposed theory we come up with a concept of controlling spin chirality by electrical means.
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Submitted 7 March, 2019;
originally announced March 2019.
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General theory of topological Hall effect in systems with chiral spin textures
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a consistent theory of the topological Hall effect (THE) in 2D magnetic systems with disordered array of chiral spin textures, such as magnetic skyrmions. We focus on the scattering regime when the mean-free path of itinerant electrons exceeds the spin texture size, and THE arises from the asymmetric carrier scattering on individual chiral spin textures. We calculate the resistivity ten…
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We present a consistent theory of the topological Hall effect (THE) in 2D magnetic systems with disordered array of chiral spin textures, such as magnetic skyrmions. We focus on the scattering regime when the mean-free path of itinerant electrons exceeds the spin texture size, and THE arises from the asymmetric carrier scattering on individual chiral spin textures. We calculate the resistivity tensor on the basis of the Boltzmann kinetic equation taking into account the asymmetric scattering on skyrmions via the collision integral. Our theory describes both the adiabatic regime, when THE arises from a spin Hall effect and the non-adiabatic scattering when THE is due to purely charge transverse currents. We analyze the dependence of THE resistivity on a chiral spin texture structure,as well as on material parameters. We discuss the crossover between spin and charge regimes of THE driven by the increase of skyrmion size, the features of THE due to the variation of the Fermi energy, and the exchange interaction strength; we comment on the sign and magnitude of THE
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Submitted 19 July, 2018;
originally announced July 2018.
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Gate-tunable magnetism of C adatoms on graphene
Authors:
J. Nokelainen,
I. V. Rozhansky,
B. Barbiellini,
E. Lähderanta,
K. Pussi
Abstract:
We have performed density functional theory calculations of graphene decorated with carbon adatoms, which bind at the bridge site of a C--C bond. Earlier studies have shown that the C adatoms have magnetic moments and have suggested the possibility of ferromagnetism with high Curie temperature. Here we propose to use a gate voltage to fine tune the magnetic moments from zero to 1$μ_B$ while changi…
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We have performed density functional theory calculations of graphene decorated with carbon adatoms, which bind at the bridge site of a C--C bond. Earlier studies have shown that the C adatoms have magnetic moments and have suggested the possibility of ferromagnetism with high Curie temperature. Here we propose to use a gate voltage to fine tune the magnetic moments from zero to 1$μ_B$ while changing the magnetic coupling from antiferromagnetism to ferromagnetism and again to antiferromagnetism. These results are rationalized within the Stoner and RKKY models. When the SCAN meta-GGA correction is used, the magnetic moments for zero gate voltage are reduced and the Stoner band ferromagnetism is slightly weakened in the ferromagnetic region.
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Submitted 9 January, 2019; v1 submitted 15 May, 2018;
originally announced May 2018.
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Topological Hall effect for electron scattering on skyrmions in external magnetic field
Authors:
K. S. Denisov,
I. V. Rozhansky,
M. N. Potkina,
I. S. Lobanov,
E. Lahderanta,
V. M. Uzdin
Abstract:
We consider topological Hall effect (THE) in thin ferromagnetic films due to electron scattering on magnetic skyrmions in the presence of the relatively strong external magnetic field. We account for the effect of the magnetic field on a skyrmion structure and describe the hallmarks of THE differentiating it from ordinary and anomalous Hall effects. We have found that, although in typical ferromag…
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We consider topological Hall effect (THE) in thin ferromagnetic films due to electron scattering on magnetic skyrmions in the presence of the relatively strong external magnetic field. We account for the effect of the magnetic field on a skyrmion structure and describe the hallmarks of THE differentiating it from ordinary and anomalous Hall effects. We have found that, although in typical ferromagnets the variation of magnetic field in the range 1-5 T substantially affects the skyrmion size, THE changes rather weakly remaining quite robust. Therefore, the magnitude of THE is primarily determined by the skyrmions sheet density $n_{sk}$, being comparable to the magnitude of the ordinary Hall effect (OHE) at $n_{sk}=10^{11}$ cm$^{-2}$. The sign of THE is opposite to that of OHE for skyrmions with positive vorticity, while for antiskyrmions the signs are the same.
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Submitted 16 March, 2018;
originally announced March 2018.
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Dynamic spin injection into a quantum well coupled to a spin-split bound state
Authors:
N. S. Maslova,
I. V. Rozhansky,
V. N. Mantsevich,
P. I. Arseyev,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is ba…
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We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is based on kinetic equations for the electron occupation numbers taking into account high order correlation functions for the bound state electrons. It is shown that the on-site Coulomb repulsion leads to an enhanced dynamic spin polarization of the electrons in the QW and a delay in the carriers tunneling into the bound state. The interplay of these two effects leads to non-trivial dependence of the spin polarization degree, which can be probed experimentally using time-resolved photoluminescence experiments. It is demonstrated that the influence of the Coulomb interactions can be controlled by adjusting the relaxation rates. These findings open a new way of studying the Hubbard-like electron interactions experimentally.
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Submitted 18 February, 2018;
originally announced February 2018.
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A nontrivial crossover in topological Hall effect regimes
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lähderanta
Abstract:
We propose a new theory of the topological Hall effect (THE) in systems with chiral magnetization vortices such as magnetic skyrmions. We solve the problem of electron scattering on a magnetic skyrmion exactly, for an arbitrary strength of exchange interaction and the skyrmion size. We report the existence of different regimes of THE and resolve the apparent contradiction between the adiabatic Ber…
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We propose a new theory of the topological Hall effect (THE) in systems with chiral magnetization vortices such as magnetic skyrmions. We solve the problem of electron scattering on a magnetic skyrmion exactly, for an arbitrary strength of exchange interaction and the skyrmion size. We report the existence of different regimes of THE and resolve the apparent contradiction between the adiabatic Berry phase theoretical approach and the perturbation theory for THE. We traced how the topological charge Hall effect transforms into the spin Hall effect upon varying the exchange interaction strength or the skyrmion size. This transformation has a nontrivial character: it is accompanied by an oscillating behavior of both charge and spin Hall currents. This hallmark of THE allows one to differentiate the chirality driven contribution to Hall response in the experiments.
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Submitted 9 July, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
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Scattering on magnetic skyrmion in the non-adiabatic approximation
Authors:
K. S. Denisov,
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a theory of electron scattring on a magnetic skyrmion for the case when exchange interaction is moderate so that adiabatic approximation and Berry phase approach is not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic skyrmions, of a special importance its applicability to dilute magnetic semiconductors with a weak exchange intera…
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We present a theory of electron scattring on a magnetic skyrmion for the case when exchange interaction is moderate so that adiabatic approximation and Berry phase approach is not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic skyrmions, of a special importance its applicability to dilute magnetic semiconductors with a weak exchange interaction.
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Submitted 11 February, 2016;
originally announced February 2016.
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Resonant 2D-2D tunneling with account for spin-orbit interaction
Authors:
I. V. Rozhansky,
N. S. Averkiev,
E. Lähderanta
Abstract:
We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a c…
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We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. For this manifestation of SOI to be observed experimentally the characteristic energy should exceed the resonant broadening related to the particles quantum lifetime in the layers. We perform an accurate analysis of the known experimental data on electron and hole 2D-2D tunneling in AlGaAs/GaAs heterostructures. It appears that for the electron tunneling the manifestation of SOI is difficult to observe, but for the holes tunneling the parameters of the real structures used in the experiments are very close to those required by the resolution criteria. We also consider a new promising candidate for the effect to be observed, that is p-doped SiGe strained heterostructures. The reported parameters of cubic Rashba SOI and quantum lifetime in strained Ge QWs fabricated up to date already match the criteria for observing SOI in 2D-2D heavy holes tunneling. As supported by our calculations small adjustments of the parameters for AlGaAs/GaAs p-type QWs or simply designing a 2D-2D tunneling experiment for SiGe case are very likely to reveal the SOI features in the 2D-2D tunneling.
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Submitted 8 December, 2015;
originally announced December 2015.
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Anomalous Hall effect in a 2D magnetic semiconductor hetereostructure: Evidence of Berry phase effects in the hopping-transport regime
Authors:
L. N. Oveshnikov,
V. A. Kulbachinskii,
A. B. Davydov,
B. A. Aronzon,
I. V. Rozhansky,
N. S. Avkeriev,
K. I. Kugel,
V. Tripathi
Abstract:
The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an…
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The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an interplay between the hopping and drift conductivities. It is shown that at sufficiently low temperatures, hopping conductivity favors the mechanisms of AHE related to the geometric (Berry-Pancharatnam) phase.
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Submitted 2 July, 2015;
originally announced July 2015.
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Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
H. Plank,
J. Loher,
D. Schuh,
D. Bougeard,
D. Weiss,
M. V. Durnev,
S. A. Tarasenko,
I. V. Rozhansky,
S. V. Ivanov,
D. R. Yakovlev,
S. D. Ganichev
Abstract:
We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field…
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We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.
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Submitted 21 February, 2015;
originally announced February 2015.
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Resonant indirect exchange via remote 2D channel
Authors:
I. V. Rozhansky,
I. V. Krainov,
N. S. Averkiev,
B. A. Aronzon,
A. B. Davydov,
K. I. Kugel,
V. Tripathi,
E. Lahderanta
Abstract:
We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant…
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We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant indirect exchange. We suggest the theoretical explanantion and a fit to this dependence as a result of the two contributions to ferromagnetism - the intralayer contribution and the resonant exchange contribution provided by the QW.
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Submitted 6 February, 2015;
originally announced February 2015.
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Ratchet effect enhanced by plasmons
Authors:
I. V. Rozhansky,
V. Yu. Kachorovskii,
M. S. Shur
Abstract:
Ratchet effect -- a {\it dc} current induced by the electromagnetic wave impinging on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicin…
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Ratchet effect -- a {\it dc} current induced by the electromagnetic wave impinging on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicinity of the plasmonic resonances and has nontrivial polarization dependence. In particular, for circular polarization, the current component, perpendicular to the modulation direction, changes sign with the inversion of the radiation helicity. Remarkably, in the high-mobility structures, this component might be much larger than the the current component in the modulation direction. We also discuss the non-resonant regime realized in dirty systems, where the plasma resonances are suppressed, and demonstrate that the non-resonant ratchet current is controlled by the Maxwell relaxation in the 2D liquid.
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Submitted 26 November, 2014;
originally announced November 2014.
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Resonant exchange interaction in semiconductors
Authors:
I. V. Rozhansky,
I. V. Kraynov,
N. S. Averkiev,
E. Lahderanta
Abstract:
We present a non-perturbative calculation of indirect exchange interaction between two paramagnetic impurities via 2D free carriers gas separated by a tunnel barrier. The new method accounts for the impurity attractive potential producing a bound state. The calculations show that for if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect excha…
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We present a non-perturbative calculation of indirect exchange interaction between two paramagnetic impurities via 2D free carriers gas separated by a tunnel barrier. The new method accounts for the impurity attractive potential producing a bound state. The calculations show that for if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect exchange interaction is strongly enhanced due to resonant tunneling and exceeds by a few orders of magnitude what one would expect from the conventional RKKY approach.
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Submitted 3 July, 2013;
originally announced July 2013.
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Tunneling magnetic effect in heterostructures with paramagnetic impurities
Authors:
I. V. Rozhansky,
N. S. Averkiev,
E. Lahderanta
Abstract:
An effect of paramagnetic impurity located in a vicinity of a quantum well (QW) on spin polarization of the carriers in the QW is analyzed theoretically. Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in terms of Anderson-Fano model of configuration interaction between a localized hole state at Mn and continuum of heavy hole states in the InGaAs-based QW. The hybridiz…
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An effect of paramagnetic impurity located in a vicinity of a quantum well (QW) on spin polarization of the carriers in the QW is analyzed theoretically. Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in terms of Anderson-Fano model of configuration interaction between a localized hole state at Mn and continuum of heavy hole states in the InGaAs-based QW. The hybridization between the localized state and the QW leads to resonant enhancement of interband radiative recombination. The splitting of the configuration resonances induced by splitting of the localized state in magnetic field results in circular polarization of light emitted from the QW. The developed theory is capable of explaining known experimental results and allows for calculation of the photoluminescence spectra and dependence of integral polarization on temperature and other parameters.
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Submitted 3 November, 2011;
originally announced November 2011.
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Conversion of hole states by acoustic solitons
Authors:
I. V. Rozhansky,
M. B. Lifshits,
S. A. Tarasenko,
N. S. Averkiev
Abstract:
The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy h…
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The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.
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Submitted 18 May, 2009;
originally announced May 2009.
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Manifestation of spin-orbit interaction in tunneling between 2D electron layers
Authors:
I. V. Rozhansky,
N. S. Averkiev
Abstract:
An influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without scattering of the electrons, the tunneling conductance can either exhibit resonances at certain voltage values or be substantially suppressed over the whole voltag…
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An influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without scattering of the electrons, the tunneling conductance can either exhibit resonances at certain voltage values or be substantially suppressed over the whole voltage range. The dependence of the conductance on voltage turns out to be very sensitive to the relation between Rashba and Dresselhaus contributions even in the absence of magnetic field. The elastic scattering broadens the resonances in the first case and restores the conductance to a larger magnitude in the latter one. These effects open possibility to determine the parameters of spin-orbit interaction and electrons scattering time in tunneling experiments with no necessity of external magnetic field.
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Submitted 24 October, 2007;
originally announced October 2007.
