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Noise Correlations in a 1D Silicon Spin Qubit Array
Authors:
M. B. Donnelly,
J. Rowlands,
L. Kranz,
Y. L. Hsueh,
Y. Chung,
A. V. Timofeev,
H. Geng,
P. Singh-Gregory,
S. K. Gorman,
J. G. Keizer,
R. Rahman,
M. Y. Simmons
Abstract:
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poiso…
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Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poisoning within the substrate has led to intense investigations of mitigation strategies to address this. In contrast correlated noise in semiconductor spin qubits as a function of distance has not been reported to date. Here we report the magnitude, frequency and spatial dependence of noise correlations between four silicon quantum dot pairs as a function of inter-dot distance at frequencies from 0.3mHz to 1mHz. We find the magnitude of charge noise correlations, quantified by the magnitude square coherence $C_{xy}$, are significantly suppressed from $>0.5$ to $<0.1$ as the inter-dot distance increases from 75nm to 300nm. Using an analytical model we confirm that, in contrast to superconducting qubits, the dominant source of correlated noise arises from low frequency charge noise from the presence of two level fluctuators (TLFs) at the native silicon-silicon dioxide surface. Knowing this, we conclude with an important and timely discussion of charge noise mitigation strategies.
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Submitted 6 May, 2024;
originally announced May 2024.
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Origin of n- and p-type conductivity in undoped $α$-PbO: role of defects
Authors:
J. Berashevich,
J. A. Rowlands,
A. Reznik
Abstract:
The first principles calculations (GGA) have been applied to study the crystallographic defects in $α$-PbO in order to understand an origin of $n$- and $p$-type conductivity in otherwise undoped $α$-PbO. It was found that deposition in the oxygen-deficient environment to be defined in our simulations by the Pb-rich/O-poor limit stimulates a formation of the O vacancies and the Pb interstitials bot…
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The first principles calculations (GGA) have been applied to study the crystallographic defects in $α$-PbO in order to understand an origin of $n$- and $p$-type conductivity in otherwise undoped $α$-PbO. It was found that deposition in the oxygen-deficient environment to be defined in our simulations by the Pb-rich/O-poor limit stimulates a formation of the O vacancies and the Pb interstitials both to be characterized by quite low formation energies $\sim$ 1.0 eV. The O vacancy being occupied by two electrons shifts a balance of electrons and holes between these two defects to excess of electrons (four electrons against two holes) that causes the $n$-type doping. For the Pb-poor/O-rich limit, an excess of oxygen triggers a formation of the O interstitials characterized by such a low formation energy that spontaneous appearance of this defect is predicted. It is shown that the concentration of the O interstitials is able to reach the extreme magnitude equal to number of the possible defect sites ($\sim 10^{22}$cm$^{-3}$). The localized state formed by the O interstitial is occupied by two holes and because there are no other defects in reasonable concentration to balance the hole redundancy, $p$-type doping is induced.
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Submitted 5 November, 2013; v1 submitted 16 April, 2013;
originally announced April 2013.
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Self-passivation of vacancies in α-PbO
Authors:
J. Berashevich,
J. A. Rowlands,
A. Reznik
Abstract:
We introduce a self-passivation of single lead (Pb) and oxygen (O) vacancies in the α-PbO compound through formation of a Pb-O vacancy pair. The preferential mechanism for pair formation involves initial development of the single Pb vacancy which, by weakening the covalent bonding, sets up the crystal lattice for an appearance of the O vacancy. Binding of the Pb and O vacancies occurs through the…
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We introduce a self-passivation of single lead (Pb) and oxygen (O) vacancies in the α-PbO compound through formation of a Pb-O vacancy pair. The preferential mechanism for pair formation involves initial development of the single Pb vacancy which, by weakening the covalent bonding, sets up the crystal lattice for an appearance of the O vacancy. Binding of the Pb and O vacancies occurs through the ionization interactions. Since no dangling bonds appear at the Pb-O pair site, this defect has a minor effect on the electronic properties. In such, vacancy self-passivation offers a practical way to improve the transport properties in thermally grown PbO layers.
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Submitted 6 February, 2013;
originally announced February 2013.
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Lead monoxide $α$-PbO: electronic properties and point defect formation
Authors:
J. Berashevich,
O. Semeniuk,
O. Rubel,
J. A. Rowlands,
A. Reznik
Abstract:
The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $α$-PbO platelets and the formation of the native point defects in $α$-PbO crystal lattice are studied using first principles calculations. The $α$-PbO lattice consists of coupled layers interaction between which is too low to produce high efficiency interlayer charge transfer. In practice, the po…
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The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $α$-PbO platelets and the formation of the native point defects in $α$-PbO crystal lattice are studied using first principles calculations. The $α$-PbO lattice consists of coupled layers interaction between which is too low to produce high efficiency interlayer charge transfer. In practice, the polycrystalline nature of $α$-PbO causes the formation of lattice defects in such a high concentration that defect-related conductivity becomes the dominant factor in the interlayer charge transition. We found that the formation energy for the O vacancies is low, such vacancies are occupied by two electrons in the zero charge state and tend to donate their electrons to the Pb vacancies that leads to ionization of both vacancies.The vacancies introduce localized states in the band gap which can affect charge transport. The O vacancy forms a defect state at 1.03 eV above the valence band which can act as a deep trap for electrons, while the Pb vacancy forms a shallow trap for holes located just 0.1 eV above the valence band. Charge de-trapping from O vacancies can be accounted for the experimentally found dark current decay in ITO/PbO/Au structures.
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Submitted 14 December, 2012; v1 submitted 30 October, 2012;
originally announced October 2012.
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Approximate Model of Neutron Resonant Scattering in a Crystal
Authors:
Arnaud Courcelle,
John Rowlands
Abstract:
In the theory of resonant scattering, the double differential cross section involves the computation of a multifold integral of a 4-point correlation function, which generalizes the traditional 2-point correlation function of Van-Hove for potential scattering. In the case of a neutron-crystal interaction, the numerical computation of these multifold integrals is cumbersome. In this paper, a new…
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In the theory of resonant scattering, the double differential cross section involves the computation of a multifold integral of a 4-point correlation function, which generalizes the traditional 2-point correlation function of Van-Hove for potential scattering. In the case of a neutron-crystal interaction, the numerical computation of these multifold integrals is cumbersome. In this paper, a new approximation is suggested. It is based on a factorization of the differential cross section into one function describing the exchange of kinetic energy between the neutron and the bound nucleus (phonons dynamic) and a function related to the nuclear scattering amplitude. This formalism is then applied to the modeling of resonant scattering of a neutron by $^{238}U$ in a $UO_2$ crystal lattice.
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Submitted 18 September, 2007;
originally announced September 2007.
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Molecular Bose-Einstein condensation in a versatile low power crossed dipole trap
Authors:
J. Fuchs,
G. J. Duffy,
G. Veeravalli,
P. Dyke,
M. Bartenstein,
C. J. Vale,
P. Hannaford,
W. J. Rowlands
Abstract:
We produce Bose-Einstein condensates of 6Li2 molecules in a low power (22 W) crossed optical dipole trap. Fermionic 6Li atoms are collected in a magneto-optical trap from a Zeeman slowed atomic beam, then loaded into the optical dipole trap where they are evaporatively cooled to quantum degeneracy. Our simplified system offers a high degree of flexibility in trapping geometry for studying ultrac…
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We produce Bose-Einstein condensates of 6Li2 molecules in a low power (22 W) crossed optical dipole trap. Fermionic 6Li atoms are collected in a magneto-optical trap from a Zeeman slowed atomic beam, then loaded into the optical dipole trap where they are evaporatively cooled to quantum degeneracy. Our simplified system offers a high degree of flexibility in trapping geometry for studying ultracold Fermi and Bose gases.
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Submitted 14 September, 2007;
originally announced September 2007.
