Dynamic switching of ferrocene and plasmonic interactions in Au/self-assembled monolayer/single Ag nanocube molecular junctions
Authors:
Mariem Ben Youssef,
Peeranuch Poungsripong,
Hugo Bidotti,
Halidou Abdoul-Yasset,
Didier Gigmes,
Olivier Margeat,
Beniamino Siacca,
Judikael Le Rouzo,
David Duche,
Dominique Vuillaume
Abstract:
We report the redox switching of ferrocene moieties embedded in a double tunnel barrier plasmonic cavity fabricated from a click-chemistry self-assembled monolayers of ferrocenyl-alkylthiol on ultra flat gold surfaces, connected to a single poly(vinylpyrrolidone) capped silver nanocube, AgNC, which is contacted by the tip of a conductive-AFM to study the electron transport properties in the dark a…
▽ More
We report the redox switching of ferrocene moieties embedded in a double tunnel barrier plasmonic cavity fabricated from a click-chemistry self-assembled monolayers of ferrocenyl-alkylthiol on ultra flat gold surfaces, connected to a single poly(vinylpyrrolidone) capped silver nanocube, AgNC, which is contacted by the tip of a conductive-AFM to study the electron transport properties in the dark and under light irradiation at the plasmonic resonance wavelengths. We observe a dual behavior in the current-voltage (I-V) characteristics in the dark: a large hysteresis loop at positive voltages and an hysteretic negative differential conductance (NDC) at negative voltages, due to the redox switching of ferrocene between its oxidized (Fc+) and neutral (Fc0) states. The I-V curves are analyzed by a generalized combined Marcus-Landauer model. We determine the highest occupied molecular orbital of the Fc+ and Fc0 states at 0.54 and 0.42 eV below the Fermi energy, respectively, with a weak reorganization energy < 0.1 eV upon switching. Under plasmonic excitation, the hysteresis and NDC behaviors are no longer observed and the I-V characteristics of the Au-ferrocenyl-alkylthiol/AgNC junctions become similar to Au-ferrocenyl-alkylthiol SAMs. A virtual molecular orbital due to the plasmon-induced coupling (fast electron transfer) between the two redox states of the Fc is determined at 0.46 eV. This dynamic behavior opens perspectives in artificial synaptic devices for neuromorphic computing with the additional function to turn on/off this synaptic behavior on-demand by light.
△ Less
Submitted 31 March, 2025; v1 submitted 5 November, 2024;
originally announced November 2024.
