-
Crystallographic dependence of Field Evaporation Energy Barrier in metals using Field Evaporation Energy Loss Spectroscopy mapping
Authors:
François Vurpillot,
Constantinos Hatzoglou,
Benjamin Klaes,
Loic Rousseau,
Jean-Baptiste Maillet,
Ivan Blum,
Baptiste Gault,
Alfred Cerezo
Abstract:
Atom probe tomography data is composed of a list of coordinates of the reconstructed atoms in the probed volume. The elemental identity of each atom is derived from time-of-flight mass spectrometry, with no local energetic or chemical information readily available within the mass spectrum. Here, we used a new data processing technique referred to as field evaporation energy loss spectroscopy (FEEL…
▽ More
Atom probe tomography data is composed of a list of coordinates of the reconstructed atoms in the probed volume. The elemental identity of each atom is derived from time-of-flight mass spectrometry, with no local energetic or chemical information readily available within the mass spectrum. Here, we used a new data processing technique referred to as field evaporation energy loss spectroscopy (FEELS), which analyses the tails of mass peaks. FEELS was used to extract critical energetic parameters that characterize the field evaporation process, which are related to the binding energy of atoms to the surface under intense electrostatic field and dependent of the path followed by the departing atoms during the field evaporation process. We focused our study on different pure face centered cubic metals (Al, Ni, Rh). We demonstrate that the energetic parameters extracted from mass spectra can be mapped in 2D with nanometric resolution. A dependence on the considered crystallographic planes is observed, with sets of planes of low Miller indices showing a lower sensitivity to the intensity of the electric field, which indicates a lower effective attachment energy. The temperature is also an important parameter in particular for Al, which we attribute to an energetic transition between two paths of field evaporation between 25K and 60K close to (002) pole at the specimen's surface. This paper shows that the complex information that can be retrieved from the measured energy loss of surface atoms is important both instrumentally and fundamentally.
△ Less
Submitted 3 April, 2024;
originally announced April 2024.
-
Flexible graphene transistors for recording cell action potentials
Authors:
Benno M. Blaschke,
Martin Lottner,
Simon Drieschner,
Andrea Bonaccini,
Karolina Stoiber,
Lionel Rousseau,
Gaëlle Lissourges,
Jose A. Garrido
Abstract:
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils important key requirements for for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. In this pa…
▽ More
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils important key requirements for for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. In this paper we demonstrate the fabrication of flexible arrays of graphene SGFETs on polyimide, a biocompatible polymeric substrate. We investigate the transistor's transconductance and intrinsic electronic noise which are key parameters for the device sensitivity, confirming that the obtained values are comparable to those of rigid graphene SGFETs. Furthermore, we show that the devices do not degrade during repeated bending and the transconductance, governed by the electronic properties of graphene, is unaffected by bending. After cell culture, we demonstrate the recording of cell action potentials from cardiomyocyte-like cells with a high signal-to-noise ratio that is higher or comparable to competing state of the art technologies. Our results highlight the great capabilities of flexible graphene SGFETs in bioelectronics, providing a solid foundation for in-vivo experiments and, eventually, for graphene-based neuroprosthetics.
△ Less
Submitted 26 January, 2016; v1 submitted 25 January, 2016;
originally announced January 2016.
-
Vortex density spectrum of quantum turbulence
Authors:
Philippe-Emmanuel P. -E. Roche,
Pantxo Diribarne,
Thomas Didelot,
Olivier Français,
Lionel Rousseau,
Hervé Willaime
Abstract:
The fluctuations of the vortex density in a turbulent quantum fluid are deduced from local second-sound attenuation measurements. These measurements are performed with a micromachined open-cavity resonator inserted across a flow of turbulent He-II near 1.6 K. The power spectrum of the measured vortex line density is compatible with a (-5/3) power law. The physical interpretation, still open, is…
▽ More
The fluctuations of the vortex density in a turbulent quantum fluid are deduced from local second-sound attenuation measurements. These measurements are performed with a micromachined open-cavity resonator inserted across a flow of turbulent He-II near 1.6 K. The power spectrum of the measured vortex line density is compatible with a (-5/3) power law. The physical interpretation, still open, is discussed.
△ Less
Submitted 8 January, 2007;
originally announced January 2007.
