Showing 1–10 of 10 results for author: Rousseau, A

Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride

Authors: J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, G. Cassabois

Abstract: Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the deve… ▽ More Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the development of novel materials. Whatever the research perspective, the identification of defects is a key but complicated, and often long-standing issue. Here, we present a general methodology to identify point defects by combining isotope substitution and polytype control, with a systematic comparison between experiments and first-principles calculations. We apply this methodology to hexagonal boron nitride (hBN) and its ubiquitous color center emitting in the ultraviolet spectral range. From isotopic purification of the host hBN matrix, a local vibrational mode of the defect is uncovered, and isotope-selective carbon doping proves that this mode belongs to a carbon-based center. Then, by varying the stacking sequence of the host hBN matrix, we unveil different optical responses to hydrostatic pressure for the non-equivalent configurations of this ultraviolet color center. We conclude that this defect is a carbon dimer in the honeycomb lattice of hBN. Our results show that tuning the stacking sequence in different polytypes of a given crystal provides unique fingerprints contributing to the identification of defects in 2D materials. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Layer-by-layer connection for large area single crystal boron nitride multilayer films

Authors: Hui Shi, Mingyuan Wang, Hongying Chen, Adrien Rousseau, Junpeng Shu, Ming Tian, Ruowang Chen, Juliette Plo, Pierre Valvin, Bernard Gil, Jiajie Qi, Qinghe Wang, Kaihui Liu, Mingliang Zhang, Guillaume Cassabois, Di Wu, Neng Wan

Abstract: Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of th… ▽ More Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of thicker single-crystalline BN films still constitutes a great challenge. In this work, we demonstrate an approach to grow large-area multilayer single-crystal BN films by chemical vapor deposition on face-centered cubic Fe-Ni (111) single crystal alloy thin films with different stoichiometric phases. We show that the BN growth is greatly tunable and improved by increasing the Fe content in single-crystal Fe-Ni (111). The formation of pyramid-shaped multilayer BN domains with aligned orientation enables a continuous connection following a layer-by-layer, 'first-meet-first-connect', mosaic stitching mechanism. By means of selected area electron diffraction, micro-photoluminescence spectroscopy in the deep UV and high-resolution transmission electron microscopy, the layer-by-layer connection mechanism is unambiguously evidenced, and the stacking order has been verified to occur as unidirectional AB and ABC stackings, i.e., in the Bernal and rhombohedral BN phase. △ Less

Submitted 12 April, 2024; originally announced April 2024.

Boron and nitrogen isotope effects on hexagonal boron nitride properties

Authors: E. Janzen, H. Schutte, J. Plo, A. Rousseau, T. Michel, W. Desrat, P. Valvin, V. Jacques, G. Cassabois, B. Gil, J. H. Edgar

Abstract: The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifyin… ▽ More The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifying the boron isotope concentration in hBN from its natural concentration (approximately 20 at$\%$ $^{10}$B, 80 at$\%$ $^{11}$B) while using naturally abundant nitrogen (99.6 at$\%$ $^{14}$N, 0.4 at$\%$ $^{15}$N), i.e. almost pure $^{14}$N. In this study, we extend the class of isotopically-purified hBN crystals to $^{15}$N. Crystals in the four configurations, namely h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N, were grown by the metal flux method using boron and nitrogen single isotope ($>99\%$) enriched sources, with nickel plus chromium as the solvent. In-depth Raman and photoluminescence spectroscopies demonstrate the high quality of the monoisotopic hBN crystals with vibrational and optical properties of the $^{15}$N-purified crystals at the state of the art of currently available $^{14}$N-purified hBN. The growth of high-quality h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N opens exciting perspectives for thermal conductivity control in heat management, as well as for advanced functionalities in quantum technologies. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 13 pages, 7 figures

Mid-infrared polarized emission from black phosphorus light-emitting diodes

Authors: Junjia Wang, Adrien Rousseau, Mei Yang, Tony Low, Sébastien Francoeur, Stéphane Kéna-Cohen

Abstract: The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 $μ$m, which are ideal for free-space optical communication, range finding and therma… ▽ More The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 $μ$m, which are ideal for free-space optical communication, range finding and thermal imaging. A number of different semiconductor platforms have been used for MIR light-emission. This includes InAsSb/InAs quantum wells, InSb/AlInSb, GaInAsSbP pentanary alloys, and intersubband transitions in group III-V compounds. These approaches, however, are costly and lack the potential for integration on silicon and silicon-on-insulator platforms. In this respect, two-dimensional (2D) materials are particularly attractive due to the ease with which they can be heterointegrated. Weak interactions between neighbouring atomic layers in these materials allows for deposition on arbitrary substrates and van der Waals heterostructures enable the design of devices with targeted optoelectronic properties. In this Letter, we demonstrate a light-emitting diode (LED) based on the 2D semiconductor black phosphorus (BP). The device, which is composed of a BP/molybdenum disulfide (MoS$_2$) heterojunction emits polarized light at $λ$ = 3.68 $μ$m with room-temperature internal and external quantum efficiencies (IQE and EQE) of ~1$\%$ and $\sim3\times10^{-2}\%$, respectively. The ability to tune the bandgap, and consequently emission wavelength of BP, with layer number, strain and electric field make it a particularly attractive platform for MIR emission. △ Less

Submitted 20 November, 2019; originally announced November 2019.

Anisotropic phase diagram and spin fluctuations of the hyperkagome magnet Gd3Ga5O12 as revealed by sound velocity measurements

Authors: A. Rousseau, J. -M. Parent, J. A. Quilliam

Abstract: Sound velocity and attenuation measurements on the frustrated garnet material Gd3Ga5O12 (GGG) are presented as a function of field and temperature, using two different acoustic modes and with two different magnetic field orientations: [100] and [110]. We demonstrate that the phase diagram is highly anisotropic, with two distinct field-induced ordered phases for H||[110] and only one for H||[100].… ▽ More Sound velocity and attenuation measurements on the frustrated garnet material Gd3Ga5O12 (GGG) are presented as a function of field and temperature, using two different acoustic modes and with two different magnetic field orientations: [100] and [110]. We demonstrate that the phase diagram is highly anisotropic, with two distinct field-induced ordered phases for H||[110] and only one for H||[100]. Extensive lattice softening is found to occur at low fields, which can be associated with spin fluctuations. However, deep within the spin liquid phase a low-temperature stiffening of the lattice and reduced attenuation provides evidence for a spin gap which may be related to short-range antiferromagnetic correlations over minimal 10-spin loops. △ Less

Submitted 16 August, 2017; v1 submitted 16 August, 2017; originally announced August 2017.

Comments: Accepted in Physical Review B Rapid Communications

Journal ref: Phys. Rev. B 96, 060411(R) (2017)

Direct measurement of the electron energy relaxation dynamics in metallic wires

Authors: Edouard Pinsolle, Alexandre Rousseau, Christian Lupien, Bertrand Reulet

Abstract: We present measurements of the dynamical response of thermal noise to an ac excitation in conductors at low temperature. From the frequency dependence of this response function - the noise thermal impedance - in the range 1 kHz-1 GHz we obtain direct determinations of the inelastic relaxation times relevant in metallic wires at low temperature: the electron-phonon scattering time and the diffusion… ▽ More We present measurements of the dynamical response of thermal noise to an ac excitation in conductors at low temperature. From the frequency dependence of this response function - the noise thermal impedance - in the range 1 kHz-1 GHz we obtain direct determinations of the inelastic relaxation times relevant in metallic wires at low temperature: the electron-phonon scattering time and the diffusion time of electrons along the wires. Combining these results with that of resistivity provides a measurement of heat capacity of samples made of thin film. The simplicity and reliability of this technique makes it very promising for future applications in other systems. △ Less

Submitted 14 June, 2016; v1 submitted 29 March, 2016; originally announced March 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 236601 (2016)

Polaron relaxation in ferroelectric thin films

Authors: E. Arveux, D. Levasseur, A. Rousseau, S. Payan, M. Maglione, G. Guegan

Abstract: We report a dielectric relaxation in ferroelectric thin films of the ABO3 family. We have compared films of different compositions with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperature (T<100K) for frequencies from 100Hz up to 10MHz. This relaxation activation energy is always lower than 200meV. It is very similar to th… ▽ More We report a dielectric relaxation in ferroelectric thin films of the ABO3 family. We have compared films of different compositions with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperature (T<100K) for frequencies from 100Hz up to 10MHz. This relaxation activation energy is always lower than 200meV. It is very similar to the polaron relaxation that we reported in the parent bulk perovskites. Being independent of the materials size, morphology and texture, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping △ Less

Submitted 10 January, 2012; originally announced January 2012.

Epitaxial refractory-metal buer layers with a chemical gradient for adjustable lattice parameter and controlled chemical interface

Authors: Olivier Fruchart, Anthony Rousseau, Didier Schmaus, A. L'Hoir, Richard Haettel, L. Ortega

Abstract: We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property d… ▽ More We have developed and characterized the structure and composition of nanometers-thick solid-solution epitaxial layers of (V,Nb) on sapphire (1120), displaying a continuous lateral gradient of composition from one to another pure element. Further covered with an ultrathin pseudomorphic layer of W, these provide a template for the fast combinatorial investigation of any growth or physical property depending of strain. △ Less

Submitted 25 January, 2011; originally announced January 2011.

Journal ref: Applied Physics Letters 98 (2011) 131906

Tunable magnetic properties of arrays of Fe(110) nanowires grown on kinetically-grooved W(110) self-organized templates

Authors: Bogdana Borca, Olivier Fruchart, Evaggelos Kritsikis, Fabien Cheynis, Anthony Rousseau, Philippe David, Claire Meyer, Jean-Christophe Toussaint

Abstract: We report a detailed magnetic study of a new type of self-organized nanowires disclosed briefly previously [B. Borca et al., Appl. Phys. Lett. 90, 142507 (2007)]. The templates, prepared on sapphire wafers in a kinetically-limited regime, consist of uniaxially-grooved W(110) surfaces, with a lateral period here tuned to 15nm. Fe deposition leads to the formation of (110) 7 nm-wide wires located… ▽ More We report a detailed magnetic study of a new type of self-organized nanowires disclosed briefly previously [B. Borca et al., Appl. Phys. Lett. 90, 142507 (2007)]. The templates, prepared on sapphire wafers in a kinetically-limited regime, consist of uniaxially-grooved W(110) surfaces, with a lateral period here tuned to 15nm. Fe deposition leads to the formation of (110) 7 nm-wide wires located at the bottom of the grooves. The effect of capping layers (Mo, Pd, Au, Al) and underlayers (Mo, W) on the magnetic anisotropy of the wires was studied. Significant discrepancies with figures known for thin flat films are evidenced and discussed in terms of step anisotropy and strain-dependent surface anisotropy. Demagnetizing coeffcients of cylinders with a triangular isosceles cross-section have also been calculated, to estimate the contribution of dipolar anisotropy. Finally, the dependence of magnetic anisotropy with the interface element was used to tune the blocking temperature of the wires, here from 50K to 200 K. △ Less

Submitted 8 June, 2009; originally announced June 2009.

Journal ref: Journal of Magnetism and Magnetic Materials 322 (2009) 257

Kinetic self-organization of trenched templates for the fabrication of versatile ferromagnetic nanowires

Authors: Bogdana Borca, Olivier Fruchart, Philippe David, Anthony Rousseau, Claire Meyer

Abstract: We have self-organized versatile magnetic nanowires, ie with variable period and adjustable magnetic anisotropy energy (MAE). First, using the kinetic roughening of W(110) uniaxial templates of trenches were grown on commercial Sapphire wafers. Unlike most templates used for self-organization, those have a variable period, 4-12nm are demonstrated here. Fe deposition then results in the formation… ▽ More We have self-organized versatile magnetic nanowires, ie with variable period and adjustable magnetic anisotropy energy (MAE). First, using the kinetic roughening of W(110) uniaxial templates of trenches were grown on commercial Sapphire wafers. Unlike most templates used for self-organization, those have a variable period, 4-12nm are demonstrated here. Fe deposition then results in the formation of wires in the trenches. The magnitude of MAE could be engineered up or down by changing the capping- or underlayer, in turn affecting the mean superparamagnetic temperature, raised to 175K so far. △ Less

Submitted 14 January, 2007; originally announced January 2007.

Comments: 3 pages