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Mitigating transients in flux-control signals in a superconducting quantum processor
Authors:
Anuj Aggarwal,
Jorge Fernández-Pendás,
Tahereh Abad,
Daryoush Shiri,
Halldór Jakobsson,
Marcus Rommel,
Andreas Nylander,
Emil Hogedal,
Amr Osman,
Janka Biznárová,
Robert Rehammar,
Michele Faucci Giannelli,
Anita Fadavi Roudsari,
Jonas Bylander,
Giovanna Tancredi
Abstract:
Flux-tunable qubits and couplers are common components in superconducting quantum processors. However, dynamically controlling these elements via current pulses poses challenges due to distortions and transients in the propagating signals. In particular, long-time transients can persist, adversely affecting subsequent qubit control operations. We model the flux control line as a first-order RC cir…
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Flux-tunable qubits and couplers are common components in superconducting quantum processors. However, dynamically controlling these elements via current pulses poses challenges due to distortions and transients in the propagating signals. In particular, long-time transients can persist, adversely affecting subsequent qubit control operations. We model the flux control line as a first-order RC circuit and introduce a class of pulses designed to mitigate long-time transients. We theoretically demonstrate the robustness of these pulses against parameter mischaracterization and provide experimental evidence of their effectiveness in mitigating transients when applied to a flux-tunable qubit coupler. The proposed pulse design offers a practical solution for mitigating long-time transients, enabling efficient and reliable experiment tune-ups without requiring detailed flux line characterization.
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Submitted 11 March, 2025;
originally announced March 2025.
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Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging
Authors:
Lert Chayanun,
Janka Biznárová,
Lunjie Zeng,
Per Malmberg,
Andreas Nylander,
Amr Osman,
Marcus Rommel,
Pui Lam Tam,
Eva Olsson,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconduct…
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We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$°$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pumping meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).
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Submitted 1 March, 2024;
originally announced March 2024.
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Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits
Authors:
Janka Biznárová,
Amr Osman,
Emil Rehnman,
Lert Chayanun,
Christian Križan,
Per Malmberg,
Marcus Rommel,
Christopher Warren,
Per Delsing,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation…
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We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation of loss is achieved by reducing the presence of oxide, a known host of defects, near the substrate-metal interface, by growing aluminum films thicker than 300 nm. A loss analysis of coplanar-waveguide resonators shows that the improvement is owing to a reduction of dielectric loss due to two-level system defects. We perform time-of-flight secondary ion mass spectrometry and observe a reduced presence of oxygen at the substrate-metal interface for the thicker films. The correlation between the enhanced performance and the film thickness is due to the tendency of aluminum to grow in columnar structures of parallel grain boundaries, where the size of the grain depends on the film thickness: transmission electron microscopy imaging shows that the thicker film has larger grains and consequently fewer grain boundaries containing oxide near this interface. These conclusions are supported by numerical simulations of the different loss contributions in the device.
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Submitted 10 October, 2023;
originally announced October 2023.
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Modeling and Harmonic Balance Analysis of Parametric Amplifiers for Qubit Read-out
Authors:
Daryoush Shiri,
Hampus Renberg Nilsson,
Pavan Telluri,
Anita Fadavi Roudsari,
Vitaly Shumeiko,
Christian Fager,
Per Delsing
Abstract:
Predicting the performance of traveling-wave parametric amplifiers (TWPAs) based on nonlinear elements like superconducting Josephson junctions (JJs) is vital for qubit read-out in quantum computers. The purpose of this article is twofold: (a) to demonstrate how nonlinear inductors based on combinations of JJs can be modeled in commercial circuit simulators, and (b) to show how the harmonic balanc…
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Predicting the performance of traveling-wave parametric amplifiers (TWPAs) based on nonlinear elements like superconducting Josephson junctions (JJs) is vital for qubit read-out in quantum computers. The purpose of this article is twofold: (a) to demonstrate how nonlinear inductors based on combinations of JJs can be modeled in commercial circuit simulators, and (b) to show how the harmonic balance (HB) is used in the reliable prediction of the amplifier performance e.g., gain and pump harmonic power conversion. Experimental characterization of two types of TWPA architectures is compared with simulations to showcase the reliability of the HB method. We disseminate the modeling know-how and techniques to new designers of parametric amplifiers.
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Submitted 22 July, 2024; v1 submitted 8 June, 2023;
originally announced June 2023.
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Mitigation of frequency collisions in superconducting quantum processors
Authors:
Amr Osman,
Jorge Fernàndez-Pendàs,
Christopher Warren,
Sandoko Kosen,
Marco Scigliuzzo,
Anton Frisk Kockum,
Giovanna Tancredi,
Anita Fadavi Roudsari,
Jonas Bylander
Abstract:
The reproducibility of qubit parameters is a challenge for scaling up superconducting quantum processors. Signal crosstalk imposes constraints on the frequency separation between neighboring qubits. The frequency uncertainty of transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction area, tunnel barrier thickness, and the qubit capacitor. We decre…
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The reproducibility of qubit parameters is a challenge for scaling up superconducting quantum processors. Signal crosstalk imposes constraints on the frequency separation between neighboring qubits. The frequency uncertainty of transmon qubits arising from the fabrication process is attributed to deviations in the Josephson junction area, tunnel barrier thickness, and the qubit capacitor. We decrease the sensitivity to these variations by fabricating larger Josephson junctions and reduce the wafer-level standard deviation in resistance down to 2%. We characterize 32 identical transmon qubits and demonstrate the reproducibility of the qubit frequencies with a 40 MHz standard deviation (i.e. 1%) with qubit quality factors exceeding 2 million. We perform two-level-system (TLS) spectroscopy and observe no significant increase in the number of TLSs causing qubit relaxation. We further show by simulation that for our parametric-gate architecture, and accounting only for errors caused by the uncertainty of the qubit frequency, we can scale up to 100 qubits with an average of only 3 collisions between quantum-gate transition frequencies, assuming 2% crosstalk and 99.9% target gate fidelity.
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Submitted 10 March, 2023; v1 submitted 8 March, 2023;
originally announced March 2023.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Simplified Josephson-junction fabrication process for reproducibly high-performance superconducting qubits
Authors:
A. Osman,
J. Simon,
A. Bengtsson,
S. Kosen,
P. Krantz,
D. Perez,
M. Scigliuzzo,
Jonas Bylander,
A. Fadavi Roudsari
Abstract:
We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with $T_1$ relaxation times averaging above 50$~μ$s ($Q>$1.5$\times$ 10$^6$). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction ele…
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We introduce a simplified fabrication technique for Josephson junctions and demonstrate superconducting Xmon qubits with $T_1$ relaxation times averaging above 50$~μ$s ($Q>$1.5$\times$ 10$^6$). Current shadow-evaporation techniques for aluminum-based Josephson junctions require a separate lithography step to deposit a patch that makes a galvanic, superconducting connection between the junction electrodes and the circuit wiring layer. The patch connection eliminates parasitic junctions, which otherwise contribute significantly to dielectric loss. In our patch-integrated cross-type (PICT) junction technique, we use one lithography step and one vacuum cycle to evaporate both the junction electrodes and the patch. In a study of more than 3600 junctions, we show an average resistance variation of 3.7$\%$ on a wafer that contains forty 0.5$\times$0.5-cm$^2$ chips, with junction areas ranging between 0.01 and 0.16 $μ$m$^2$. The average on-chip spread in resistance is 2.7$\%$, with 20 chips varying between 1.4 and 2$\%$. For the junction sizes used for transmon qubits, we deduce a wafer-level transition-frequency variation of 1.7-2.5$\%$. We show that 60-70$\%$ of this variation is attributed to junction-area fluctuations, while the rest is caused by tunnel-junction inhomogeneity. Such high frequency predictability is a requirement for scaling-up the number of qubits in a quantum computer.
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Submitted 10 November, 2020;
originally announced November 2020.
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High Quality 3-Dimensional Aluminum Microwave Cavities
Authors:
M. Kudra,
J. Biznárová,
F. Roudsari,
J. J. Burnett,
D. Niepce,
S. Gasparinetti,
B. Wickman,
P. Delsing
Abstract:
We present a comprehensive study of internal quality factors in superconducting stub-geometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different pu…
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We present a comprehensive study of internal quality factors in superconducting stub-geometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different purity, resonance frequency and size were studied. Our treatment results in reproducible cavities, with ten of them showing internal quality factors above 80 million at a power corresponding to an average of a single photon in the cavity. The best cavity has an internal quality factor of 115 million at single photon level.
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Submitted 3 June, 2020;
originally announced June 2020.
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Phononic loss in superconducting resonators on piezoelectric substrates
Authors:
Marco Scigliuzzo,
Laure E. Bruhat,
Andreas Bengtsson,
Jonathan J. Burnett,
Anita Fadavi Roudsari,
Per Delsing
Abstract:
We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabr…
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We numerically and experimentally investigate the phononic loss for superconducting resonators fabricated on a piezoelectric substrate. With the help of finite element method simulations, we calculate the energy loss due to electromechanical conversion into bulk and surface acoustic waves. This sets an upper limit for the resonator internal quality factor $Q_i$. To validate the simulation, we fabricate quarter wavelength coplanar waveguide resonators on GaAs and measure $Q_i$ as function of frequency, power and temperature. We observe a linear increase of $Q_i$ with frequency, as predicted by the simulations for a constant electromechanical coupling. Additionally, $Q_i$ shows a weak power dependence and a negligible temperature dependence around 10$\,$mK, excluding two level systems and non-equilibrium quasiparticles as the main source of losses at that temperature.
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Submitted 19 December, 2019;
originally announced December 2019.
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Characterizing decoherence rates of a superconducting qubit by direct microwave scattering
Authors:
Yong Lu,
Andreas Bengtsson,
Jonathan J. Burnett,
Emely Wiegand,
Baladitya Suri,
Philip Krantz,
Anita Fadavi Roudsari,
Anton Frisk Kockum,
Simone Gasparinetti,
Göran Johansson,
Per Delsing
Abstract:
We experimentally investigate a superconducting qubit coupled to the end of an open transmission line, in a regime where the qubit decay rates to the transmission line and to its own environment are comparable. We perform measurements of coherent and incoherent scattering, on- and off-resonant fluorescence, and time-resolved dynamics to determine the decay and decoherence rates of the qubit. In pa…
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We experimentally investigate a superconducting qubit coupled to the end of an open transmission line, in a regime where the qubit decay rates to the transmission line and to its own environment are comparable. We perform measurements of coherent and incoherent scattering, on- and off-resonant fluorescence, and time-resolved dynamics to determine the decay and decoherence rates of the qubit. In particular, these measurements let us discriminate between non-radiative decay and pure dephasing. We combine and contrast results across all methods and find consistent values for the extracted rates. The results show that the pure dephasing rate is one order of magnitude smaller than the non-radiative decay rate for our qubit. Our results indicate a pathway to benchmark decoherence rates of superconducting qubits in a resonator-free setting.
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Submitted 4 December, 2019;
originally announced December 2019.
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Magnetic Field Dependent Microwave Losses in Superconducting Niobium Microstrip Resonators
Authors:
Sangil Kwon,
Anita Fadavi Roudsari,
Olaf W. B. Benningshof,
Yong-Chao Tang,
Hamid R. Mohebbi,
Ivar A. J. Taminiau,
Deler Langenberg,
Shinyoung Lee,
George Nichols,
David G. Cory,
Guo-Xing Miao
Abstract:
We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For pe…
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We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For perpendicular fields, the dominant loss mechanism is vortex motion or switches from quasiparticle generation to vortex motion, depending on cooling procedures. In particular, we introduce a plot of the quality factor versus the resonance frequency as a general method for identifying the dominant loss mechanism. We calculate the expected resonance frequency and the quality factor as a function of the magnetic field by modeling the complex resistivity. Key parameters characterizing microwave loss are estimated from comparisons of the observed and expected resonator properties. Based on these key parameters, we find a niobium resonator whose thickness is similar to its penetration depth is the best choice for X-band electron spin resonance applications. Finally, we detect partial release of the Meissner current at the vortex penetration field, suggesting that the interaction between vortices and the Meissner current near the edges is essential to understand the magnetic field dependence of the resonator properties.
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Submitted 26 June, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.
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Junction-less nanowire based photodetector: Role of nanowire width
Authors:
Anita Fadavi Roudsari,
Iman Khodadadzadeh,
Nixon O,
Simarjeet S. Saini,
M. P. Anantram
Abstract:
Enhanced photocurrent is demonstrated in a junction-less photodetector with nanowires embedded in its channel. The fabricated photodetector consists of a large area for efficient absorption of incident light with energy band engineering achieved in nanowires. The structure design consists of a set of two symmetrically positioned gates, primary and secondary, that are located over the nanowires. Ea…
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Enhanced photocurrent is demonstrated in a junction-less photodetector with nanowires embedded in its channel. The fabricated photodetector consists of a large area for efficient absorption of incident light with energy band engineering achieved in nanowires. The structure design consists of a set of two symmetrically positioned gates, primary and secondary, that are located over the nanowires. Each gate is used for biasing and control of the charge flow. We find that detectors with narrower nanowires controlled by their secondary gate generate larger photocurrents under similar illumination conditions. Our results show that while the dark current remains the same, the photocurrent increases as the nanowire width decreases.
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Submitted 25 July, 2017;
originally announced July 2017.