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Showing 1–4 of 4 results for author: Rothman, J

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  1. arXiv:1705.06832  [pdf

    cond-mat.mtrl-sci

    Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications

    Authors: Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Denis Rouchon, Julie Widiez, Johan Rothman, Jean-Michel Hartmann, Alexei Chelnokov, Vincent Reboud, Vincent Calvo

    Abstract: Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be the… ▽ More

    Submitted 18 May, 2017; originally announced May 2017.

    Comments: 9 pages, 4 figures

  2. arXiv:1704.06436  [pdf

    physics.optics cond-mat.mes-hall

    Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

    Authors: V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, V. Calvo

    Abstract: Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu… ▽ More

    Submitted 21 April, 2017; originally announced April 2017.

    Comments: 15 pages with supplementary information. 6 figures and 2 tables in total

  3. arXiv:1701.03788  [pdf

    cond-mat.mtrl-sci

    Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents

    Authors: A. Gassenq, L. Milord, J. Aubin, N. Pauc, K. Guilloy, J. Rothman, D. Rouchon, A. Chelnokov, J. M. Hartmann, V. Reboud, V. Calvo

    Abstract: GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be… ▽ More

    Submitted 13 January, 2017; originally announced January 2017.

    Comments: 14 pages, 4 figures, submitted to Applied Physics Letters 2017

  4. arXiv:0910.5342  [pdf, ps, other

    cond-mat.mtrl-sci

    Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport

    Authors: Matthieu Jamet, Ing-Song Yu, Thibaut Devillers, André Barski, Pascale Bayle-Guillemaud, Cyrille Beigne, Johan Rothman, Vincent Baltz, Joel Cibert

    Abstract: Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall… ▽ More

    Submitted 28 October, 2009; originally announced October 2009.