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Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Authors:
Alban Gassenq,
Kevin Guilloy,
Nicolas Pauc,
Denis Rouchon,
Julie Widiez,
Johan Rothman,
Jean-Michel Hartmann,
Alexei Chelnokov,
Vincent Reboud,
Vincent Calvo
Abstract:
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be the…
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Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated strained-Ge on Si platform for mid-infrared integrated optics.
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Submitted 18 May, 2017;
originally announced May 2017.
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Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
Authors:
V. Reboud,
A. Gassenq,
N. Pauc,
J. Aubin,
L. Milord,
Q. M. Thai,
M. Bertrand,
K. Guilloy,
D. Rouchon,
J. Rothman,
T. Zabel,
F. Armand Pilon,
H. Sigg,
A. Chelnokov,
J. M. Hartmann,
V. Calvo
Abstract:
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu…
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Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.
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Submitted 21 April, 2017;
originally announced April 2017.
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Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
Authors:
A. Gassenq,
L. Milord,
J. Aubin,
N. Pauc,
K. Guilloy,
J. Rothman,
D. Rouchon,
A. Chelnokov,
J. M. Hartmann,
V. Reboud,
V. Calvo
Abstract:
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be…
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GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn<8%) or on GeSiSn layers. In this work, we have calibrated the GeSn Raman relationship for really high Sn content GeSn binaries (6<xSn<15%). We have used fully strained GeSn layers and fully relaxed GeSn under-etched microstructures to clearly differentiate the contributions of strain and chemical composition on the Ge-Ge Raman spectral shift. We have shown that the GeSn Raman-strain coefficient for high Sn contents is higher compared to that for pure Ge.
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Submitted 13 January, 2017;
originally announced January 2017.
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Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport
Authors:
Matthieu Jamet,
Ing-Song Yu,
Thibaut Devillers,
André Barski,
Pascale Bayle-Guillemaud,
Cyrille Beigne,
Johan Rothman,
Vincent Baltz,
Joel Cibert
Abstract:
Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall…
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Changing the morphology of the growing surface and the nature of residual impurities in (Ge,Mn) layers - by using different substrates - dramatically changes the morphology of the ferromagnetic Mn-rich inclusions and the magnetotransport properties. We obtained p-type layers with nanocolumns, either parallel or entangled, and n-type layers with spherical clusters. Holes exhibit an anomalous Hall effect, and electrons exhibit a tunneling magnetoresistance, both with a clear dependence on the magnetization of the Mn-rich inclusions; holes exhibit orbital MR, and electrons show only the normal Hall effect, and an additional component of magnetoresistance due to weak localization, all three being independent of the magnetic state of the Mn rich inclusions. Identified mechanisms point to the position of the Fermi level of the Mn-rich material with respect to the valence band of germanium as a crucial parameter in such hybrid layers.
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Submitted 28 October, 2009;
originally announced October 2009.
