-
Imaging the indirect-to-direct band-gap crossover in PbI2
Authors:
M. Rosmus,
A. Antezak,
A. Ptok,
F. Fortuna,
C. P. Sonny Tsotezem,
E. M. Staicu Casagrande,
A. Momeni,
A. Ouvrard,
C. Bigi,
M. Zonno,
A. Ouerghi,
H. Khemliche,
A. F. Santander-Syro,
E. Frantzeskakis
Abstract:
The nature of the band-gap in PbI2 (i.e. direct or indirect) is crucial for its applications. Here we directly image, using angle-resolved photoemission spectroscopy, its thickness-dependent crossover from an indirect to a direct band-gap. We experimentally probe a large shift of the valence band maximum towards the center of the Brillouin zone, when the thickness of PbI2 films is greater than a m…
▽ More
The nature of the band-gap in PbI2 (i.e. direct or indirect) is crucial for its applications. Here we directly image, using angle-resolved photoemission spectroscopy, its thickness-dependent crossover from an indirect to a direct band-gap. We experimentally probe a large shift of the valence band maximum towards the center of the Brillouin zone, when the thickness of PbI2 films is greater than a monolayer. Our experimental results, accompanied by density functional theory calculations, suggest that the band-gap crossover is driven by interlayer interactions and the hybridization of iodine pz orbitals. These findings demonstrate the tunable electronic properties of PbI2, highlighting its potential for applications in optoelectronics.
△ Less
Submitted 10 June, 2025;
originally announced June 2025.
-
Correlated Structural and Optical Characterization during Van der Waals Epitaxy of PbI2 on Graphene
Authors:
C. P. Sonny Tsotezem,
E. M. Staicu Casagrande,
A. Momeni,
A. Ouvrard,
A. Ouerghi,
M. Rosmus,
A. Antezak,
F. Fortuna,
A. F. Santander-Syro,
E. Frantzeskakis,
A. M. Lucero Manzano,
E. D. Cantero,
E. A. Sánchez,
H. Khemliche
Abstract:
Van der Waals heterostructures of 2D layered materials have gained much attention due to their flexible electronic properties, which make them promising candidates for energy, sensing, catalytic, and biomedical applications. Lead iodide (PbI2), a 2D layered semiconductor material belonging to the metal halide family, shows a thickness-dependent band gap with an indirect-to-direct transition above…
▽ More
Van der Waals heterostructures of 2D layered materials have gained much attention due to their flexible electronic properties, which make them promising candidates for energy, sensing, catalytic, and biomedical applications. Lead iodide (PbI2), a 2D layered semiconductor material belonging to the metal halide family, shows a thickness-dependent band gap with an indirect-to-direct transition above one monolayer. It has emerged as an excellent candidate for photodetectors and is a key component in metal halide perovskites solar cells. In the current work, we investigated the growth dynamics and the real-time correlation between structural and optical properties of PbI2 layers deposited on graphene/SiC(0001) by Molecular Beam Epitaxy. The structural and optical properties are probed respectively by Grazing Incidence Fast Atom Diffraction and Surface Differential Reflectance Spectroscopy. The growth proceeds layer-by-layer in a van der Waals-like epitaxy, with the zigzag direction of PbI2 parallel to the armchair direction of graphene. Both techniques bring evidence of significant modifications of the structural, electronic, and optical properties of the first PbI2 monolayer, characterized by a 1% tensile strain that relaxes over 3 to 5 monolayers. For a single monolayer, Angle-Resolved Photoemission Spectroscopy reveals a charge transfer from graphene to PbI2, demonstrated by an energy shift of the order of 50 meV in the graphene band structure.
△ Less
Submitted 6 June, 2025;
originally announced June 2025.
-
Metallic layered materials with magnetic frustration: An ARPES view of the SmAuAl$_4$Ge$_2$ and TbAuAl$_4$Ge$_2$
Authors:
P. Rezende-Gonçalves,
A. Antezak,
T. Kato,
K. Feng,
F. Fortuna,
P. Le Fèvre,
M. Rosmus,
N. Olszowska,
T. Sobol,
D. J. Singh,
R. E. Baumbach,
A. F. Santander-Syro,
E. Frantzeskakis
Abstract:
Compounds of the new materials class LnTAl$_4$X$_2$ (Ln = lanthanide, X = tetrel, T = transition metal) host exotic magnetic phenomena due to geometric frustration induced by their triangular lattice. Complex spin arrangements, magnetic fluctuations and double magnetic transitions have been well observed by means of magneto-transport. Nevertheless, the experimental electronic structure of this fam…
▽ More
Compounds of the new materials class LnTAl$_4$X$_2$ (Ln = lanthanide, X = tetrel, T = transition metal) host exotic magnetic phenomena due to geometric frustration induced by their triangular lattice. Complex spin arrangements, magnetic fluctuations and double magnetic transitions have been well observed by means of magneto-transport. Nevertheless, the experimental electronic structure of this family of materials has been poorly studied. We have investigated the experimental electronic structure of two members of this class of materials: SmAuAl$_4$Ge$_2$ and TbAuAl$_4$Ge$_2$. By means of Angle-Resolved PhotoEmission Spectroscopy (ARPES) accompanied by Density Functional Theory calculations (DFT), we reveal common trends and features, the important effect of localized spin moments on the electronic structure, the presence of surface-localized electronic states and the nature of the surface termination layer. Low-dimensionality, exchange interaction, and spin-orbit coupling are all important ingredients of the electronic structure.
△ Less
Submitted 26 May, 2025;
originally announced May 2025.
-
ARPES studies of Hf(0001) surface: flat bands formation in the dice lattice
Authors:
Laxman Nagireddy,
Saleem Ayaz Khan,
Maria Christine Richter,
Olivier Heckmann,
Mauro Fanciulli,
Natalia Olszowska,
Marcin Rosmus,
Weimin Wang,
Laurent Nicolaï,
Ján Minár,
Karol Hricovini
Abstract:
We present the first electronic structure measurements of the Hf(0001) single-crystal surface using angle-resolved photoemission spectroscopy (ARPES). The ARPES results are supported by theoretical calculations performed using the full-potential linearized augmented plane wave (FLAPW) method and the Korringa-Kohn-Rostoker (KKR) Green function method. In addition to insight into the electronic stru…
▽ More
We present the first electronic structure measurements of the Hf(0001) single-crystal surface using angle-resolved photoemission spectroscopy (ARPES). The ARPES results are supported by theoretical calculations performed using the full-potential linearized augmented plane wave (FLAPW) method and the Korringa-Kohn-Rostoker (KKR) Green function method. In addition to insight into the electronic structure of Hf(0001), our results reveal the impact of surface contamination, particularly oxygen and carbon, on the predicted surface state. Moreover, we observe a flat band induced by both, the presence of oxygen and the dice structure of the surface. The orbital texture of Hf bands is confirmed by linear dichroism studies
△ Less
Submitted 18 March, 2025;
originally announced March 2025.
-
Tunable Octdong and Spindle-Torus Fermi Surfaces in Kramers Nodal Line Metals
Authors:
Gabriele Domaine,
Moritz H. Hirschmann,
Kirill Parshukov,
Mihir Date,
Matthew D. Watson,
Sydney K. Y. Dufresne,
Shigemi Terakawa,
Marcin Rosmus,
Natalia Olszowska,
Stuart S. P. Parkin,
Andreas P. Schnyder,
Niels B. M. Schröter
Abstract:
It has recently been proposed that all achiral non-centrosymmetric crystals host so-called Kramers nodal lines, which are doubly degenerate band crossings connecting time-reversal invariant momenta in the Brillouin zone that arise due to spin-orbit coupling. When Kramers nodal lines intersect the Fermi level, they form exotic three-dimensional Fermi surfaces which is certain configurations can be…
▽ More
It has recently been proposed that all achiral non-centrosymmetric crystals host so-called Kramers nodal lines, which are doubly degenerate band crossings connecting time-reversal invariant momenta in the Brillouin zone that arise due to spin-orbit coupling. When Kramers nodal lines intersect the Fermi level, they form exotic three-dimensional Fermi surfaces which is certain configurations can be fully described by two-dimensional massless Dirac fermions. These Fermi surfaces are predicted to realize a quantized optical conductivity with multiple quantized levels a large light- and field-induced anomalous Hall effect. However, until now, no Kramers nodal line metal with such unconventional Fermi surfaces has been experimentally observed. Here, we extend the search for Kramers nodal line metals beyond the previously considered case in which the Fermi surfaces enclose a single time-reversal invariant momentum. Using angle-resolved photoelectron spectroscopy measurements and ab-initio calculations, we present evidence that the 3R polytypes of TaS$_2$ and NbS$_2$ are Kramers nodal line metals with open Octdong and Spindle-torus Fermi surfaces, respectively. We show that by reducing the band filling, a transition between these two configurations can be observed. Moreover, our data suggests a naturally occurring size quantization effect of inclusions of 3R-TaS$_2$ in commercially available 2H-TaS$_2$ crystals, which could enable the observation of quantized optical conductivity. Finally, since the open Fermi-surfaces encircle two time-reversal invariant momenta each, we predict a phase transition from a Kramers nodal line metal to a conventional metal by strain or uniaxial pressure. Our work establishes the 3R phase of metallic transition metal dichalcogenides as a tunable platform to explore new phenomena expected from exotic Fermi surfaces in Kramers nodal line metals.
△ Less
Submitted 11 March, 2025;
originally announced March 2025.
-
Observation of the Dirac Dispersions in Co-doped CaFe2As2
Authors:
Marcin Rosmus,
Natalia Olszowska,
Rafal Kurleto,
Zbigniew Bukowski,
Pawel Starowicz
Abstract:
We performed an angle-resolved photoemission spectroscopy (ARPES) study of the electronic structure of the CaFe$_2$As$_2$ 122-iron pnictide, a parent compound, and two iron-based superconductors CaFe$_{2-x}$Co$_x$As$_2$ ($x = 0.07$ and 0.15). We studied the band structure of this system across the phase diagram with the transition from the orthorhombic spin density wave (SDW) phase to the tetragon…
▽ More
We performed an angle-resolved photoemission spectroscopy (ARPES) study of the electronic structure of the CaFe$_2$As$_2$ 122-iron pnictide, a parent compound, and two iron-based superconductors CaFe$_{2-x}$Co$_x$As$_2$ ($x = 0.07$ and 0.15). We studied the band structure of this system across the phase diagram with the transition from the orthorhombic spin density wave (SDW) phase to the tetragonal paramagnetic phase. We observed characteristic features of the electronic structures corresponding to the antiferromagnetic phase in the parent compound and the samples with low cobalt concentration ($x = 0.07$). For highly doped systems ($x = 0.15$), the measurements revealed the concentric branches of the Fermi surface, which are associated with paramagnetic and superconducting 122-iron pnictides. We found the existence of Dirac cones located at 30 meV below Fermi energy for nonsuperconducting CaFe$_2$As$_2$ and superconducting CaFe$_{1.93}$Co$_{0.07}$As$_2$ orthorhombic SDW systems.
△ Less
Submitted 17 February, 2025;
originally announced February 2025.
-
Linear dichroism of the optical properties of SnS and SnSe van der Waals crystals
Authors:
Agata K. Tołłoczko,
Jakub Ziembicki,
Miłosz Grodzicki,
Jarosław Serafińczuk,
Seth A. Tongay,
Melike Erdi,
Natalia Olszowska,
Marcin Rosmus,
Robert Kudrawiec
Abstract:
Tin monochalcogendies SnS and SnSe, belonging to a familiy of van der Waals crystals isoelectronic to black phosphorus, are know as enivornmetally-friendly materials promisng for thermoelecric conversion applications. However, they exhibit other desired functionalities, such as intrisic linear dichroism of the optical and electronic properties originating from strongly anisotropic orthorhombic cry…
▽ More
Tin monochalcogendies SnS and SnSe, belonging to a familiy of van der Waals crystals isoelectronic to black phosphorus, are know as enivornmetally-friendly materials promisng for thermoelecric conversion applications. However, they exhibit other desired functionalities, such as intrisic linear dichroism of the optical and electronic properties originating from strongly anisotropic orthorhombic crystal structure. This property makes them perfect candidats for polarization-sensitive photodetectors working in near infrared spectral range. We present a comprehensive study of the SnS and SnSe crystals by means of optical spectroscopy and photoemission spectroscopy, supported by ab initio calcualtions. The studies revealed the high sensitivity of the optical response of both materials to the incident light polarization, which we interpret in terms of the electronic band dispersion and orbital composition of the electronic bands, dictating the selection rules. From the photoemission investigation we determine the ionization potential, electron affinity and work function, which are parameters crucial for the design of devices based on semiconductor heterostructures.
△ Less
Submitted 25 September, 2024;
originally announced September 2024.
-
Dirac Dispersions and Fermi Surface Nesting in LaCuSb$_{2}$
Authors:
Marcin Rosmus,
Natalia Olszowska,
Zbigniew Bukowski,
Przemysław Piekarz,
Andrzej Ptok,
Paweł Starowicz
Abstract:
LaCuSb$_{2}$ is a superconductor with a transition temperature of about $T_\text{c} = 0.9$K and is a potential platform where Dirac fermions can be experimentally observed. In this paper, we report systematic high-resolution studies of its electronic structure using the angle-resolved photoemission spectroscopy (ARPES) technique supported by the DFT calculation. The Fermi surface consists of four…
▽ More
LaCuSb$_{2}$ is a superconductor with a transition temperature of about $T_\text{c} = 0.9$K and is a potential platform where Dirac fermions can be experimentally observed. In this paper, we report systematic high-resolution studies of its electronic structure using the angle-resolved photoemission spectroscopy (ARPES) technique supported by the DFT calculation. The Fermi surface consists of four branches, of which the two inner ones are more 3-dimensional and the theoretical calculations reproduce well the experiment. We observe several linear dispersions forming Dirac-like structures. The nodal lines are present in the system along ${\text{M}}$-${\text{A}}$ and ${\text{X}}$-${\text{R}}$ and Dirac crossings along ${\text{X}}$-${\text{R}}$ are observed by ARPES. Finally, the nesting between external Fermi surface pockets, which corresponds to charge density wave (CDW) modulation vector is enhanced in LaCuSb$_{2}$ as compared to LaAgSb$_{2}$, while CDW appears in the latter system.
△ Less
Submitted 3 April, 2024; v1 submitted 26 March, 2024;
originally announced March 2024.
-
Emergent impervious band crossing in the bulk in topological nodal line semimetal ZrAs$_2$
Authors:
A. S. Wadge,
K. Zberecki,
B. J. Kowalski,
D. Jastrzebski,
P. K. Tanwar,
P. Iwanowski,
R. Diduszko,
A. Moosarikandy,
M. Rosmus,
N. Olszowska,
A. Wisniewski
Abstract:
Topological nodal-line semimetals represent a unique class of materials with intriguing electronic structures and rich of symmetries, hosting electronic states with nontrivial topological properties. Among these, ZrAs$_2$ stands out, characterized by its nodal lines in a momentum space, governed by nonsymmorphic symmetries. This study integrates angle-resolved photoemission spectroscopy (ARPES) wi…
▽ More
Topological nodal-line semimetals represent a unique class of materials with intriguing electronic structures and rich of symmetries, hosting electronic states with nontrivial topological properties. Among these, ZrAs$_2$ stands out, characterized by its nodal lines in a momentum space, governed by nonsymmorphic symmetries. This study integrates angle-resolved photoemission spectroscopy (ARPES) with density functional theory (DFT) calculations to explore the electronic states of ZrAs$_2$. Our study provides experimental evidence of nonsymmorphic symmetry-protected band crossing and nodal lines in ZrAs$_2$. In ARPES scans, we observed a distinctive surface and bulk states at different photon energies associated with nodal lines. Our results, supported by calculations based on DFT, unveil such impervious band crossing anchored at specific points in the Brillouin zone, with particular emphasis on the S point. Surface bands and bulk states near the crossing are elucidated through slab calculations, corroborating experimental findings. These findings enhance our understanding of the electronic structure of ZrAs$_2$.
△ Less
Submitted 18 July, 2024; v1 submitted 7 March, 2024;
originally announced March 2024.
-
Intercalation-induced states at the Fermi level and the coupling of intercalated magnetic ions to conducting layers in Ni$_{1/3}$NbS$_2$
Authors:
Yuki Utsumi Boucher,
Izabela Biało,
Mateusz A. Gala,
Wojciech Tabiś,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Bruno Gudac,
Mario Novak,
Naveen Kumar Chogondahalli Muniraju,
Ivo Batistić,
Neven Barišić,
Petar Popčević,
Eduard Tutiš
Abstract:
The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spe…
▽ More
The magnetic sublayers introduced by intercalation into the host transition-metal dichalcogenide (TMD) are known to produce various magnetic states. The magnetic sublayers and their magnetic ordering strongly modify the electronic coupling between layers of the host compound. Understanding the roots of this variability is a significant challenge. Here we employ the angle-resolved photoelectron spectroscopy at various photon energies, the {\it ab initio} electronic structure calculations, and modeling to address the particular case of Ni-intercalate, Ni$_{1/3}$NbS$_2$. We find that the bands around the Fermi level bear the signature of a strong yet unusual hybridization between NbS$_2$ conduction band states and the Ni 3$d$ orbitals. The hybridization between metallic NbS$_2$ layers is almost entirely suppressed in the central part of the Brillouin zone, including the part of the Fermi surface around the $\mathrmΓ$ point. Simultaneously, it gets very pronounced towards the zone edges. It is shown that this behavior is the consequence of the rather exceptional, {\it symmetry imposed}, spatially strongly varying, {\it zero total} hybridization between relevant Ni magnetic orbitals and the neighboring Nb orbitals that constitute the metallic bands. We also report the presence of the so-called $β$-feature, discovered only recently in two other magnetic intercalates with very different magnetic orderings. In Ni$_{1/3}$NbS$_2$, the feature shows only at particular photon energies, indicating its bulk origin. Common to prior observations, it appears as a series of very shallow electron pockets at the Fermi level, positioned along the edge of the Brillouin zone. Unforeseen by {\it ab initio} electronic calculations, and its origin still unresolved, the feature appears to be a robust consequence of the intercalation of 2H-NbS$_2$ with magnetic ions.
△ Less
Submitted 15 February, 2024; v1 submitted 11 January, 2024;
originally announced January 2024.
-
Valley-Polarized quantum Hall phase in a strain-controlled Dirac system
Authors:
G. Krizman,
J. Bermejo-Ortiz,
T. Zakusylo,
M. Hajlaoui,
T. Takashiro,
M. Rosmus,
N. Olszowska,
J. J. Kolodziej,
G. Bauer,
Y. Guldner,
G. Springholz,
L. -A. de Vaulchier
Abstract:
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band g…
▽ More
In multivalley systems, the valley pseudospin offers rich physics going from encoding of information by its polarization (valleytronics), to exploring novel phases of matter when its degeneracy is changed. Here, by strain engineering, we reveal fully valley-polarized quantum Hall (QH) phases in the Pb1-xSnxSe Dirac system. Remarkably, when the valley energy splitting exceeds the fundamental band gap, we observe a bipolar QH phase, heralded by the coexistence of hole and electron chiral edge states at distinct valleys in the same quantum well. This suggests that spatially overlaid counter-propagating chiral edge states emerging at different valleys do not interfere with each other.
△ Less
Submitted 4 January, 2024;
originally announced January 2024.
-
A Novel Ferroelectric Rashba Semiconductor
Authors:
Gauthier Krizman,
Tetiana Zakusylo,
Lakshmi Sajeev,
Mahdi Hajlaoui,
Takuya Takashiro,
Marcin Rosmus,
Natalia Olszowska,
Jacek J. Kolodziej,
Guenther Bauer,
Ondrej Caha,
Gunther Springholz
Abstract:
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the…
▽ More
Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.
△ Less
Submitted 19 October, 2023;
originally announced October 2023.
-
3D Topological Semimetal Phases of Strained $α$-Sn on Insulating Substrate
Authors:
Jakub Polaczyński,
Gauthier Krizman,
Alexandr Kazakov,
Bartłomiej Turowski,
Joaquín Bermejo Ortiz,
Rafał Rudniewski,
Tomasz Wojciechowski,
Piotr Dłużewski,
Marta Aleszkiewicz,
Wojciech Zaleszczyk,
Bogusława Kurowska,
Zahir Muhammad,
Marcin Rosmus,
Natalia Olszowska,
Louis-Anne De Vaulchier,
Yves Guldner,
Tomasz Wojtowicz,
Valentine V. Volobuev
Abstract:
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α…
▽ More
$α$-Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize $α$-Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality $α$-Sn layers on insulating, hybrid CdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000 cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modeling, provide an exhaustive description of the bulk states in the DSM phase. The modeled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the $π$ Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish $α$-Sn as an attractive topological material for exploring relativistic physics and future applications.
△ Less
Submitted 13 June, 2024; v1 submitted 7 September, 2023;
originally announced September 2023.
-
Experimental observation of metallic states with different dimensionality in a quasi-1D charge density wave compound
Authors:
P. Rezende-Gonçalves,
M. Thees,
J. Rojas Castillo,
D. Silvera-Vega,
R. L. Bouwmeester,
E. David,
A. Antezak,
A. J. Thakur,
F. Fortuna,
P. Le Fèvre,
M. Rosmus,
N. Olszowska,
R. Magalhães-Paniago,
A. C. Garcia-Castro,
P. Giraldo-Gallo,
E. Frantzeskakis,
A. F. Santander-Syro
Abstract:
TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have r…
▽ More
TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these different ground states and making TaTe$_4$ very interesting for fundamental studies. Although TaTe$_4$ exhibits CDW ordering below 475 K, transport experiments have reported metallic behavior with a resistivity plateau at temperatures lower than 10 K. In this paper, we study the electronic structure of TaTe$_4$ using a combination of high-resolution angle-resolved photoemission spectroscopy and density functional calculations. Our results reveal the existence of the long-sought metallic states. These states exhibit mixed dimensionality, while some of them might have potential topological properties.
△ Less
Submitted 28 April, 2023;
originally announced May 2023.
-
Electronic band structure and surface states in Dirac semimetal LaAgSb$_{2}$
Authors:
Marcin Rosmus,
Natalia Olszowska,
Zbigniew Bukowski,
Paweł Starowicz,
Przemysław Piekarz,
Andrzej Ptok
Abstract:
LaAgSb$_{2}$ is a Dirac semimetal showing charge density wave (CDW) order. Previous ARPES results suggest the existence of the Dirac-cone-like structure in the vicinity of the Fermi level along the $Γ$-M direction [X. Shi et al., Phys. Rev. B 93, 081105(R) (2016)]. This paper is devoted to a complex analysis of the electronic band structure of LaAgSb$_{2}$ by means of angle-resolved photoemission…
▽ More
LaAgSb$_{2}$ is a Dirac semimetal showing charge density wave (CDW) order. Previous ARPES results suggest the existence of the Dirac-cone-like structure in the vicinity of the Fermi level along the $Γ$-M direction [X. Shi et al., Phys. Rev. B 93, 081105(R) (2016)]. This paper is devoted to a complex analysis of the electronic band structure of LaAgSb$_{2}$ by means of angle-resolved photoemission spectroscopy (ARPES) and theoretical calculations within the direct ab initio method as well as tight binding model formulation. To investigate the possible surface states we performed the direct DFT slab calculation and the surface Green function calculation for the (001) surface. The appearance of the surface states, which depends strongly on surface, points to the conclusion that LaSb termination is realized in the cleaved crystals. Moreover, the surface states predicted by our calculations at the $Γ$ and $X$ points are found by ARPES. Nodal lines, which exist along X--R and M-A path due to crystal symmetry, are also observed experimentally. The calculations reveal another nodal lines, which originate from vanishing of spin-orbit coupling and are located at X-M-A-R plane at the Brillouin zone boundary. In addition, we analyze band structure along the $Γ$-M path to verify, whether Dirac surface states can be expected. Their appearance in this region is not confirmed.
△ Less
Submitted 27 April, 2022;
originally announced April 2022.
-
Topological Lifshitz transition in Weyl semimetal NbP decorated with heavy elements
Authors:
Ashutosh S Wadge,
Bogdan J Kowalski,
Carmine Autieri,
Przemysław Iwanowski,
Andrzej Hruban,
Natalia Olszowska,
Marcin Rosmus,
Jacek Kołodziej,
Andrzej Wiśniewski
Abstract:
Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cle…
▽ More
Studies of the Fermi surface modification after in-situ covering NbP semimetal with heavy elements Pb and Nb ultrathin layers were performed by means of angle-resolved photoemission spectroscopy (ARPES). First, the electronic structure was investigated for pristine single crystals with two possible terminations (P and Nb) of the (0 0 1) surface. The nature of the electronic states of these two cleaving planes is different: P-terminated surface shows spoon and bow tie shaped fingerprints, whereas these shapes are not present in Nb-terminated surfaces. ARPES studies show that even 1 monolayer (ML) of Pb causes topological quantum Lifshitz transition (TQLT) in P- and Nb-terminated surfaces. Deposited Pb 5d electrons have wide extended atomic orbitals which leads to strong hybridization with Pb-terminated surface and a corresponding shift in the Fermi energy. Nb has less capability to perturb the system than Pb because Nb has weaker spin-orbit coupling than Pb. Nb-terminated surface subjected to surface decoration with approximately 1.3 ML of Nb shows no dramatic modification in the Fermi surface. In the case of Nb decorated P-terminated surface, deposition of approximately 1 ML modifies the electronic structure of NbP and it is on the verge of TQLT. Despite the strong spin-orbit and strong hybridization of the heavy elements on the surface, it is possible to observe the TQLT of the surface states thanks to the robustness of the bulk topology.
△ Less
Submitted 4 July, 2022; v1 submitted 12 February, 2022;
originally announced February 2022.
-
Role of intercalated Cobalt in the electronic structure of Co$_{1/3}$NbS$_2$
Authors:
Petar Popčević,
Yuki Utsumi,
Izabela Biało,
Wojciech Tabis,
Mateusz A. Gala,
Marcin Rosmus,
Jacek J. Kolodziej,
Natalia Tomaszewska,
Mariusz Garb,
Helmuth Berger,
Ivo Batistić,
Neven Barišić,
László Forró,
Eduard Tutiš
Abstract:
Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energ…
▽ More
Co$_{1/3}$NbS$_2$ is the magnetic intercalate of 2H-NbS$_2$ where electronic itinerant and magnetic properties strongly influence each other throughout the phase diagram. Here we report the first angle-resolved photoelectron spectroscopy (ARPES) study in Co$_{1/3}$NbS$_2$. The observed electronic structure seemingly resembles the one of the parent material 2H-NbS$_2$, with the shift in Fermi energy of 0.5 eV accounting for the charge transfer of approximately two electrons from each Co ion into the NbS$_2$ layers. However, we observe significant departures from the 2H-NbS$_2$ rigid band picture: Entirely unrelated to the 2H-NbS$_2$ electronic structure, a shallow electronic band is found crossing the Fermi level near the boundary of the first Brillouin zone of the superstructure imposed by the intercalation. The evolution of the experimental spectra upon varying the incident photon energy suggests the Co origin of this band. Second, the Nb bonding band, found deeply submerged below the Fermi level at the $Γ$ point, indicates the interlayer-hybridization being very much amplified by intercalation, with Co magnetic ions probably acting as covalent bridges between NbS$_2$ layers. The strong hybridization between conducting and magnetic degrees of freedom suggests dealing with strongly correlated electron system where the interlayer coupling plays an exquisite role.
△ Less
Submitted 8 April, 2022; v1 submitted 24 November, 2021;
originally announced November 2021.
-
Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
Authors:
A. S. Wadge,
G. Grabecki,
C. Autieri,
B. J. Kowalski,
P. Iwanowski,
G. Cuono,
M. F. Islam,
C. M. Canali,
K. Dybko,
A. Hruban,
A. Łusakowski,
T. Wojciechowski,
R. Diduszko,
A. Lynnyk,
N. Olszowska,
M. Rosmus,
J. Kołodziej,
A. Wiśniewski
Abstract:
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$…
▽ More
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-doping of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.
△ Less
Submitted 10 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
-
Photoemission signature of momentum-dependent hybridization in CeCoIn$_5$
Authors:
R. Kurleto,
M. Fidrysiak,
L. Nicolaï,
J. Minár,
M. Rosmus,
Ł. Walczak,
A. Tejeda,
J. E. Rault,
F. Bertran,
A. P. Kądzielawa,
D. Legut,
D. Gnida,
D. Kaczorowski,
K. Kissner,
F. Reinert,
J. Spałek,
P. Starowicz
Abstract:
Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-…
▽ More
Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\barΓ$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model.
△ Less
Submitted 4 September, 2021; v1 submitted 14 January, 2021;
originally announced January 2021.
-
Effect of electron doping in FeTe$_{1-y}$Se$_{y}$ realized by Co and Ni substitution
Authors:
M. Rosmus,
R. Kurleto,
D. J. Gawryluk,
J. Goraus,
M. Z. Cieplak,
P. Starowicz
Abstract:
Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron doping, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as expansion and shrinking of electron and hole Fermi surface, respectively. Doping of either element leads to a Lifshitz transition realized as a removal of one or…
▽ More
Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron doping, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as expansion and shrinking of electron and hole Fermi surface, respectively. Doping of either element leads to a Lifshitz transition realized as a removal of one or two hole pockets. This explains qualitatively a complex behavior of Hall coefficient observed before [Bezusyy, et al., Phys. Rev. B 91, 100502 (2015)], including change of sign with doping, which takes place only below room temperature. Assuming that Ni substitution should deliver twice more electrons to the valence band than Co, it appears that such transfer is slightly more effective in the case of Co. Therefore, charge doping cannot account for much stronger effect of Ni on superconducting and transport properties [Bezusyy, et al., Phys. Rev. B 91, 100502 (2015)]. Although overall band shifts are roughly proportional to the amount of dopant, clear deviations from a rigid band shift scenario are found. The shape of electron pockets becomes elliptical only for Ni doping, effective mass of electron bands increases with doping, strong reduction of effective mass is observed for one of hole bands of the undoped system. The topology of hole and electron pockets for superconducting Fe$_{1.01}$Te$_{0.67}$Se$_{0.33}$ with T$_{c}$=13.6 K indicates a deviation from nesting. Co and Ni doping causes further departure from nesting, which accompanies the reduction of critical temperature.
△ Less
Submitted 28 October, 2019;
originally announced October 2019.
-
Studies of Electronic Structure across a Quantum Phase Transition in CeRhSb$_{1-x}$Sn$_x$
Authors:
R. Kurleto,
J. Goraus,
M. Rosmus,
A. Ślebarski,
P. Starowicz
Abstract:
We study an electronic structure of CeRhSb$_{1-x}$Sn$_x$ system, which displays quantum critical transition from a Kondo insulator to a non-Fermi liquid at $x=0.13$. We provide ultraviolet photoelectron spectra of valence band obtained at 12.5 K. Acoherent peak at the Fermi level is not present in the data, but a signal related to 4f$^1$$_{7/2}$ final state is detected. Spectral intensity at the F…
▽ More
We study an electronic structure of CeRhSb$_{1-x}$Sn$_x$ system, which displays quantum critical transition from a Kondo insulator to a non-Fermi liquid at $x=0.13$. We provide ultraviolet photoelectron spectra of valence band obtained at 12.5 K. Acoherent peak at the Fermi level is not present in the data, but a signal related to 4f$^1$$_{7/2}$ final state is detected. Spectral intensity at the Fermi edge has a general tendency to grow with Sn content. Theoretical calculations of band structure are realized with full-potential local-orbital minimum-basis code using scalar relativistic and full relativistic approach. The calculations reveal a depletion of density of states at the Fermi level for CeRhSb. This gap is shifted above the Fermi energy with increasing Sn content and thus a rise of density of states at the Fermi level is reflected in the calculations. It agrees with metallic properties of compounds with larger $x$. The calculations also yield another important effects of Sn substitution. Band structure is displaced in a direction corresponding to hole doping, although with deviations from a rigid band shift scenario. Lifshitz transitions modify a topology of the Fermi surface a few times and a number of bands crossing the Fermi level increases.
△ Less
Submitted 11 March, 2020; v1 submitted 17 October, 2019;
originally announced October 2019.
