Showing 1–1 of 1 results for author: Roshchupkina, O

Tailoring the magnetism of GaMnAs films by ion irradiation

Authors: Lin Li, S. D. Yao, Shengqiang Zhou, D. Bürger, O. Roshchupkina, S. Akhmadaliev, A. W. Rushforth, R. P. Campion, J. Fassbender, M. Helm, B. L. Gallagher, C. Timm, H. Schmidt

Abstract: Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease… ▽ More Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects. △ Less

Submitted 7 December, 2010; originally announced December 2010.

Comments: 15 pages, 4 figures, accepted for publication at J. Phys. D