Hierarchical domain structures in buckled ferroelectric free sheets
Authors:
David Pesquera,
Kumara Cordero-Edwards,
Marti Checa,
Ilia Ivanov,
Blai Casals,
Marcos Rosado,
José Manuel Caicedo,
Laura Casado-Zueras,
Javier Pablo-Navarro,
César Magén,
José Santiso,
Neus Domingo,
Gustau Catalan,
Felip Sandiumenge
Abstract:
Flat elastic sheets tend to display wrinkles and folds. From pieces of clothing down to two-dimensional crystals, these corrugations appear in response to strain generated by sheet compression or stretching, thermal or mechanical mismatch with other elastic layers, or surface tension. Extensively studied in metals, polymers and, more recently, in van der Waals exfoliated layers, with the advent of…
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Flat elastic sheets tend to display wrinkles and folds. From pieces of clothing down to two-dimensional crystals, these corrugations appear in response to strain generated by sheet compression or stretching, thermal or mechanical mismatch with other elastic layers, or surface tension. Extensively studied in metals, polymers and, more recently, in van der Waals exfoliated layers, with the advent of thin single crystal freestanding films of complex oxides, researchers are now paying attention to novel microstructural effects induced by bending ferroelectric-ferroelastics, where polarization is strongly coupled to lattice deformation. Here we show that wrinkle undulations in BaTiO3 sheets bonded to a viscoelastic substrate transform into a buckle delamination geometry when transferred onto a rigid substrate. Using spatially resolved techniques at different scales (Raman, scanning probe and electron microscopy), we show how these delaminations in the free BaTiO3 sheets display a self-organization of ferroelastic domains along the buckle profile that strongly differs from the more studied sinusoidal wrinkle geometry. Moreover, we disclose the hierarchical distribution of a secondary set of domains induced by the misalignment of these folding structures from the preferred in-plane crystallographic orientations. Our results disclose the relevance of the morphology and orientation of buckling instabilities in ferroelectric free sheets, for the stabilization of different domain structures, pointing to new routes for domain engineering of ferroelectrics in flexible oxide sheets.
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Submitted 29 November, 2024;
originally announced November 2024.
Structural peculiarities of $\varepsilon$-Fe$_2$O$_3$ / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry
Authors:
Sergey M. Suturin,
Polina A. Dvortsova,
Leonid A. Snigirev,
Victor A. Ukleev,
Takayasu Hanashima,
Marcos Rosado,
Belén Ballesteros
Abstract:
The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide ($\varepsilon$-Fe$_2$O$_3$) grown by pulsed laser deposition onto a semiconductor GaN (0001) substrate. The columnar structure of the nanoscale $\varepsilon$-Fe$_2$O$_3$ films has been for the first time investigated using high resolution electron m…
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The present paper is dedicated to the structural study of crystallographic peculiarities appearing in epitaxial films of metastable epsilon iron oxide ($\varepsilon$-Fe$_2$O$_3$) grown by pulsed laser deposition onto a semiconductor GaN (0001) substrate. The columnar structure of the nanoscale $\varepsilon$-Fe$_2$O$_3$ films has been for the first time investigated using high resolution electron microscopy (HRTEM) direct space technique complemented by reciprocal space methods of high-energy electron diffraction and color-enhanced HRTEM image Fourier filtering. The study of $\varepsilon$-Fe$_2$O$_3$ / GaN interface formation has been further expanded by carrying out a depth resolved analysis of density and chemical composition by neutron reflectometry and energy-dispersive X-ray spectroscopy. The obtained results shed light onto the properties and the origin of the enigmatic few-nanometer thick low density transition layer residing at the $\varepsilon$-Fe$_2$O$_3$ / GaN interface. A detailed knowledge of the properties of this layer is believed to be highly important for the development of $\varepsilon$-Fe$_2$O$_3$ / GaN heterostructures that can potentially become part of the iron-oxide based ferroic-on-semiconductor devices with room temperature magneto-electric coupling.
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Submitted 14 September, 2022;
originally announced September 2022.
