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Engineering the microstructure and magnetism of La$_2$CoMnO$_6$ thin films by tailoring oxygen stoichiometry
Authors:
R. Galceran,
C. Frontera,
Ll. Balcells,
J. Cisneros-Fernández,
L. López Mir,
J. Roqueta,
J. Santiso,
N. Bagués,
B. Bozzo,
A. Pomar,
F. Sandiumenge,
B. Martínez
Abstract:
We report on the magnetic and structural properties of ferromagnetic-insulating La$_2$CoMnO$_6$ thin films grown on top of (001) STO substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields a…
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We report on the magnetic and structural properties of ferromagnetic-insulating La$_2$CoMnO$_6$ thin films grown on top of (001) STO substrates by means of RF sputtering technique. Careful structural analysis, by using synchrotron X-ray diffraction, allows identifying two different crystallographic orientations that are closely related to oxygen stoichiometry and to the features (coercive fields and remanence) of the hysteresis loops. Both Curie temperature and magnetic hysteresis turn out to be dependent on the oxygen stoichiometry. In situ annealing conditions allow tailoring the oxygen content of the films, therefore controlling their microstructure and magnetic properties.
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Submitted 8 July, 2014;
originally announced July 2014.
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Chemical Diffusion at Mixed Ionic Electronic Semiconductor Interfaces and comparison with La2NiO4+d epitaxial thin films
Authors:
J. Roqueta,
A. Apostolidis,
J. Chaigneau,
R. Moreno,
J. Zapata,
M. Burriel,
J. Santiso
Abstract:
A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials simultaneously conducting electronic and ionic point defects and to explore how rectifying effects on the electronic or ionic currents may affect the chemical d…
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A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials simultaneously conducting electronic and ionic point defects and to explore how rectifying effects on the electronic or ionic currents may affect the chemical diffusion and voltage at the interfaces under polarization. We found qualitatively good agreement with experimental measurements of the electrical conductivity relaxation of La2NiO4+d thin films epitaxially grown on NdGaO3 (110) substrates when the possible oxygen exchange between film and substrate is taken into account. We discuss the implications of this model to understand space charge layer formation and chemical diffusion on oxide thin film heterostructures when exposed to high temperatures and different oxygen partial pressures.
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Submitted 25 July, 2013;
originally announced July 2013.
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Competing misfit relaxation mechanisms in epitaxial correlated oxides
Authors:
Felip Sandiumenge,
José Santiso,
Lluis Balcells,
Zorica Konstantinovic,
Jaume Roqueta,
Alberto Pomar,
Benjamin Martínez
Abstract:
Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidences of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic a…
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Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidences of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic and octahedral tilting energies in La0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn - O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e. the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering.
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Submitted 16 November, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
