Epitaxial rare-earth doped complex oxide thin films for infrared applications
Authors:
Mythili Surendran,
Joshua Rollag,
Christopher E. Stevens,
Ching-Tai Fu,
Harish Kumarasubramanian,
Zhe Wang,
Darrell G. Schlom,
Ricky Gibson,
Joshua R. Hendrickson,
Jayakanth Ravichandran
Abstract:
Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitabl…
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Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitable for scalable quantum memories, on-chip lasers and amplifiers. Here, we report high-quality epitaxial thin films of Tm-doped CaZrO$_3$ grown by pulsed laser deposition for infrared optoelectronic and quantum memory applications. We perform extensive structural and chemical characterization to probe the crystallinity of the films and the doping behavior. Low temperature photoluminescence measurements show sharp radiative transitions in the short-wave infrared range of 1.75 - 2 μm.
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Submitted 19 February, 2024;
originally announced February 2024.
THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN
Authors:
J. N. Heyman,
E. M. Weiss,
J. R. Rollag,
K. M. Yu,
O. D. Dubon,
Y. J. Kuang,
C. W. Tu,
W. Walukiewicz
Abstract:
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bim…
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THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy.
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Submitted 10 May, 2018;
originally announced May 2018.
