Showing 1–50 of 56 results for author: Roldán, R

How Substitutional Point Defects in Two-Dimensional WS$_2$ Induce Charge Localization, Spin-Orbit Splitting, and Strain

Authors: Bruno Schuler, Jun-Ho Lee, Christoph Kastl, Katherine A. Cochrane, Christopher T. Chen, Sivan Refaely-Abramson, Shengjun Yuan, Edo van Veen, Rafael Roldán, Nicholas J. Borys, Roland J. Koch, Shaul Aloni, Adam M. Schwartzberg, D. Frank Ogletree, Jeffrey B. Neaton, Alexander Weber-Bargioni

Abstract: Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided in… ▽ More Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step towards impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS$_2$) grown by chemical vapor deposition (CVD) using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (Cr$_{\text{W}}$) and molybdenum (Mo$_{\text{W}}$) at a tungsten site, oxygen at sulfur sites in both bottom and top layers (O$_{\text{S}}$ top/bottom), as well as two negatively charged defects (CDs). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS$_2$ as reported here will guide future efforts of targeted defect engineering and doping of TMDs. △ Less

Submitted 15 May, 2020; originally announced May 2020.

Journal ref: ACS Nano 13, 10520 (2019)

Piezoelectricity in monolayer hexagonal boron nitride

Authors: P. Ares, T. Cea, M. Holwill, Y. B. Wang, R. Roldan, F. Guinea, D. V. Andreeva, L. Fumagalli, K. S. Novoselov, C. R. Woods

Abstract: Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, fr… ▽ More Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunnelling devices to composites. Monolayer hBN, which has no center of symmetry, has been predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, we observed this effect as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity was found in bilayer and bulk hBN, where the centre of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the local electric field and carrier concentration in van der Waals heterostructures via strain. The experimental approach used here also shows a way to investigate the piezoelectric properties of other materials on the nanoscale by using electrostatic scanning probe techniques. △ Less

Submitted 20 November, 2019; originally announced November 2019.

Tuning 2D hyperbolic plasmons in black phosphorus

Authors: Edo van Veen, Andrei Nemilentsau, Anshuman Kumar, Rafael Roldán, Mikhail I. Katsnelson, Tony Low, Shengjun Yuan

Abstract: Black phosphorus presents a very anisotropic crystal structure, making it a potential candidate for hyperbolic plasmonics, characterized by a permittivity tensor where one of the principal components is metallic and the other dielectric. Here we demonstrate that atomically thin black phosphorus can be engineered to be a hyperbolic material operating in a broad range of the electromagnetic spectrum… ▽ More Black phosphorus presents a very anisotropic crystal structure, making it a potential candidate for hyperbolic plasmonics, characterized by a permittivity tensor where one of the principal components is metallic and the other dielectric. Here we demonstrate that atomically thin black phosphorus can be engineered to be a hyperbolic material operating in a broad range of the electromagnetic spectrum from the entire visible spectrum to ultraviolet. With the introduction of an optical gain, a new hyperbolic region emerges in the infrared. The character of this hyperbolic plasmon depends on the interplay between gain and loss along the two crystalline directions. △ Less

Submitted 7 December, 2018; originally announced December 2018.

Comments: Article 6 pages, 4 figures; supplemental material 6 pages, 4 figures

Journal ref: Phys. Rev. Applied 12, 014011 (2019)

Strain-induced bound states in transition-metal dichalcogenide bubbles

Authors: L. Chirolli, E. Prada, F. Guinea, R. Roldán, P. San-Jose

Abstract: We theoretically study the formation of single-particle bound states confined by strain at the center of bubbles in monolayers of transition-metal dichalcogenides (TMDs). Bubbles ubiquitously form in two-dimensional crystals on top of a substrate by the competition between van der Waals forces and the hydrostatic pressure exerted by trapped fluid. This leads to strong strain at the center of the b… ▽ More We theoretically study the formation of single-particle bound states confined by strain at the center of bubbles in monolayers of transition-metal dichalcogenides (TMDs). Bubbles ubiquitously form in two-dimensional crystals on top of a substrate by the competition between van der Waals forces and the hydrostatic pressure exerted by trapped fluid. This leads to strong strain at the center of the bubble that reduces the bangap locally, creating potential wells for the electrons that confine states inside. We simulate the spectrum versus the bubble radius for the four semiconducting group VI TMDs, MoS$_2$, WSe$_2$, WS$_2$ and MoSe$_2$, and find an overall Fock-Darwin spectrum of bubble bound states, characterised by small deviations compatible with Berry curvature effects. We analyse the density of states, the state degeneracies, orbital structure and optical transition rules. Our results show that elastic bubbles in these materials are remarkably efficient at confining photocarriers. △ Less

Submitted 7 February, 2019; v1 submitted 5 November, 2018; originally announced November 2018.

Comments: 8 pages, 6 figures

Journal ref: 2D Materials 6, 025010 (2019)

Plasmon Spectrum of Single Layer Antimonene

Authors: Guus Slotman, Alexander Rudenko, Edo van Veen, Mikhail I. Katsnelson, Rafael Roldán, Shengjun Yuan

Abstract: The collective excitation spectrum of two-dimensional (2D) antimonene is calculated beyond the low energy continuum approximation. The dynamical polarizability is computed using a 6-orbitals tight-binding model that properly accounts for the band structure of antimonene in a broad energy range. Electron-electron interaction is considered within the random phase approximation. The obtained spectrum… ▽ More The collective excitation spectrum of two-dimensional (2D) antimonene is calculated beyond the low energy continuum approximation. The dynamical polarizability is computed using a 6-orbitals tight-binding model that properly accounts for the band structure of antimonene in a broad energy range. Electron-electron interaction is considered within the random phase approximation. The obtained spectrum is rich, containing the standard intra-band 2D plasmon and a set of single inter-band modes. We find that spin-orbit interaction plays a fundamental role in the reconstruction of the excitation spectrum, with the emergence of novel inter-band branches in the continuum that interact with the plasmon. △ Less

Submitted 26 September, 2018; v1 submitted 24 September, 2018; originally announced September 2018.

Comments: 8 pages, 9 figures, accepted by Phys. Rev. B

Electronic structure of monolayer antimonene nanoribbons under out-of-plane and transverse bias

Authors: Edo van Veen, Jin Yu, Mikhail I. Katsnelson, Rafael Roldan, Shengjun Yuan

Abstract: A systematic study of the electronic properties of single layer Sb (antimonene) nanoribbons is presented. By using a 6-orbital tight-binding Hamiltonian, we study the electronic band structure of finite ribbons with zigzag or armchair termination. We show that there is good agreement between ab initio calculations and the tight-binding model. We study how the size of the gap can be controlled by a… ▽ More A systematic study of the electronic properties of single layer Sb (antimonene) nanoribbons is presented. By using a 6-orbital tight-binding Hamiltonian, we study the electronic band structure of finite ribbons with zigzag or armchair termination. We show that there is good agreement between ab initio calculations and the tight-binding model. We study how the size of the gap can be controlled by applying an external bias potential. An electric field applied perpendicular to the antimonene layer is found to increase the band gap, while a transverse bias potential leads to a position dependent reduction of the band gap. Both kinds of bias potential break inversion symmetry of the crystal. This, together with the strong intrinsic spin-orbit coupling of antimonene, leads to spin-splitting of the valence band states. △ Less

Submitted 9 October, 2018; v1 submitted 12 July, 2018; originally announced July 2018.

Comments: 7 pages, 2 tables, 11 figures

Journal ref: Phys. Rev. Materials 2, 114011 (2018)

Black phosphorus: A new bandgap tuning knob

Authors: Rafael Roldán, Andres Castellanos-Gomez

Abstract: Modern electronics rely on devices whose functionality can be adjusted by the end-user with an external 'knob'. A new tuning knob to modify the band gap of black phosphorus has been experimentally demonstrated. Modern electronics rely on devices whose functionality can be adjusted by the end-user with an external 'knob'. A new tuning knob to modify the band gap of black phosphorus has been experimentally demonstrated. △ Less

Submitted 15 November, 2017; originally announced November 2017.

Comments: News and Views article. Pre-print authors' version

Journal ref: Nature Photonics 11, 407-409 (2017)

Piezoelectricity and valley Chern number in inhomogeneous hexagonal 2D crystals

Authors: Habib Rostami, Francisco Guinea, Marco Polini, Rafael Roldán

Abstract: Conversion of mechanical forces to electric signal is possible in non-centrosymmetric materials due to linear piezoelectricity. The extraordinary mechanical properties of two-dimensional materials and their high crystallinity make them exceptional platforms to study and exploit the piezoelectric effect. Here, the piezoelectric response of non-centrosymmetric hexagonal two-dimensional crystals is s… ▽ More Conversion of mechanical forces to electric signal is possible in non-centrosymmetric materials due to linear piezoelectricity. The extraordinary mechanical properties of two-dimensional materials and their high crystallinity make them exceptional platforms to study and exploit the piezoelectric effect. Here, the piezoelectric response of non-centrosymmetric hexagonal two-dimensional crystals is studied using the modern theory of polarization and ${\bm k} \cdot {\bm p}$ model Hamiltonians. An analytical expression for the piezoelectric constant is obtained in terms of topological quantities such as the {\it valley Chern number}. The theory is applied to semiconducting transition metal dichalcogenides and hexagonal Boron Nitride. We find good agreement with available experimental measurements for MoS$_2$. We further generalise the theory to study the polarization of samples subjected to inhomogeneous strain (e.g.~nanobubbles). We obtain a simple expression in terms of the strain tensor, and show that charge densities $\gtrsim 10^{11} {\rm cm}^{-2}$ can be induced by realistic inhomogeneous strains, $ε\approx 0.01 - 0.03$. △ Less

Submitted 10 July, 2018; v1 submitted 12 July, 2017; originally announced July 2017.

Comments: 14 pages, 3 figures

Journal ref: npj 2D Materials and Applications 2,15 (2018)

Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS$_3$: electron doping and plasmons

Authors: J. A. Silva-Guillén, E. Canadell, P. Ordejón, F. Guinea, R. Roldán

Abstract: Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. The nature of the Fermi surface and Lindhard response function for different doping concentrations is studied by means of first-principles… ▽ More Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. The nature of the Fermi surface and Lindhard response function for different doping concentrations is studied by means of first-principles DFT calculations. It is suggested that for electron doping levels $x$ (number of electrons per unit cell) $\sim$ 0.18-0.30$e^-$ the system could exhibit incommensurate charge or spin modulations which, however, would keep the metallic state whereas systems doped with smaller $x$ would be 2D metals without any electronic instability. The effect of spin-orbit coupling in the band dispersion is analysed. The DFT effective masses are used to study the plasmon spectrum from an effective low energy model. We find that this material supports highly anisotropic plasmons, with opposite anisotropy for the electron and hole bands. △ Less

Submitted 19 April, 2017; originally announced April 2017.

Comments: Accepted for publication in 2D Materials

Journal ref: 2D Materials 4, 025085 (2017)

Theory of 2D crystals: graphene and beyond

Authors: Rafael Roldán, Luca Chirolli, Elsa Prada, Jose Angel Silva-Guillén, Pablo San-Jose, Francisco Guinea

Abstract: This tutorial review presents an overview of the basic theoretical aspects of two-dimensional (2D) crystals. We revise essential aspects of graphene and the new families of semiconducting 2D materials, like transition metal dichalcogenides or black phosphorus. Minimal theoretical models for various materials are presented. Some of the exciting new possibilities offered by 2D crystals are discussed… ▽ More This tutorial review presents an overview of the basic theoretical aspects of two-dimensional (2D) crystals. We revise essential aspects of graphene and the new families of semiconducting 2D materials, like transition metal dichalcogenides or black phosphorus. Minimal theoretical models for various materials are presented. Some of the exciting new possibilities offered by 2D crystals are discussed, such as manipulation and control of quantum degrees of freedom (spin and pseudospin), confinement of excitons, control of the electronic and optical properties with strain engineering, or unconventional superconducting phases. △ Less

Submitted 2 August, 2017; v1 submitted 21 March, 2017; originally announced March 2017.

Comments: Tutorial review article. 13 pages, 7 figures

Journal ref: Chem. Soc. Rev. 46, 4387 (2017)

Electronic properties of single-layer antimony: Tight-binding model, spin-orbit coupling and the strength of effective Coulomb interactions

Authors: A. N. Rudenko, M. I. Katsnelson, R. Roldán

Abstract: The electronic properties of single-layer antimony are studied by a combination of first-principles and tight-binding methods. The band structure obtained from relativistic density functional theory is used to derive an analytic tight-binding model that offers an efficient and accurate description of single-particle electronic states in a wide spectral region up to the mid-UV. The strong (… ▽ More The electronic properties of single-layer antimony are studied by a combination of first-principles and tight-binding methods. The band structure obtained from relativistic density functional theory is used to derive an analytic tight-binding model that offers an efficient and accurate description of single-particle electronic states in a wide spectral region up to the mid-UV. The strong ($λ=0.34$ eV) intra-atomic spin-orbit interaction plays a fundamental role in the band structure, leading to splitting of the valence band edge and to a significant reduction of the effective mass of the hole carriers. To obtain an effective many-body model of two-dimensional Sb we calculate the screened Coulomb interaction and provide numerical values for the on-site $\bar{V}_{00}$ (Hubbard) and intersite $\bar{V}_{ij}$ interactions. We find that the screening effects originate predominantly from the 5$p$ states, and are thus fully captured within the proposed tight-binding model. The leading kinetic and Coulomb energies are shown to be comparable in magnitude, $|t_{01}|/(\bar{V}_{00}-\bar{V}_{01}) \sim 1.6$, which suggests a strongly correlated character of 5$p$ electrons in Sb. The results presented here provide an essential step toward the understanding and rational description of a variety of electronic properties of this two-dimensional material. △ Less

Submitted 22 February, 2017; originally announced February 2017.

Comments: 6 pages, 5 figures, 3 tables

Journal ref: Phys. Rev. B 95, 081407(R) (2017)

Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model

Authors: J. A. Silva-Guillén, P. San-Jose, R. Roldán

Abstract: Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model is highly useful for the calculation of many physical properties, for which first principle calculations are more demanding in computational terms when having… ▽ More Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model is highly useful for the calculation of many physical properties, for which first principle calculations are more demanding in computational terms when having a large number of atoms. Here, we present a set of Slater-Koster parameters for a tight-binding model that accurately reproduce the structure and the orbital character of the valence and conduction bands of single layer MX$_2$, where M = Mo,Wand X = S, Se. The fit of the analytical tight-binding Hamiltonian is done based on band structure from ab initio calculations. The model is used to calculate the optical conductivity of the different compounds from the Kubo formula. △ Less

Submitted 14 November, 2016; originally announced November 2016.

Journal ref: Applied Sciences 6, 284 (2016)

Enhanced Spin-Flip Scattering by Surface Roughness in WS$_2$ and MoS$_2$ Armchair Nanoribbons

Authors: Shoeib Babaee Touski, Rafael Roldán, Mahdi Pourfath, M. Pilar López-Sancho

Abstract: The band structures of single-layer MoS$_2$ and WS$_2$ present a coupling between spin and valley degrees of freedom that suppresses spin-flip scattering and spin dephasing. Here we show that out-of-plane deformations, such as corrugations or ripples, enhance spin-flip scattering in armchair MoS$_2$ and WS$_2$ nanoribbons. Spin transport in the presence of surface roughness is systematically inves… ▽ More The band structures of single-layer MoS$_2$ and WS$_2$ present a coupling between spin and valley degrees of freedom that suppresses spin-flip scattering and spin dephasing. Here we show that out-of-plane deformations, such as corrugations or ripples, enhance spin-flip scattering in armchair MoS$_2$ and WS$_2$ nanoribbons. Spin transport in the presence of surface roughness is systematically investigated, employing the non-equilibrium Green's function method along with the tight-binding approximation. Both transmission and conductance have been calculated as a function of surface roughness. Our results indicate that the spin-flip rate, usually neglected in flat pristine samples, increases significantly with the surface roughness amplitude. These results are important for the design and fabrication of transition metal dichalcogenides based spintronic devices. △ Less

Submitted 9 March, 2017; v1 submitted 10 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 95, 165301 (2017)

Effect of moiré superlattice reconstruction in the electronic excitation spectrum of graphene-metal heterostructures

Authors: Antonio Politano, Guus J. Slotman, Rafael Roldán, Gennaro Chiarello, Davide Campi, Mikhail I. Katsnelson, Shengjun Yuan

Abstract: We have studied the electronic excitation spectrum in periodically rippled graphene on Ru(0001) and flat, commensurate graphene on Ni(111) by means of high-resolution electron energy loss spectroscopy and a combination of density functional theory and tight-binding approaches. We show that the periodic moiré superlattice originated by the lattice mismatch in graphene/Ru(0001) induces the emergence… ▽ More We have studied the electronic excitation spectrum in periodically rippled graphene on Ru(0001) and flat, commensurate graphene on Ni(111) by means of high-resolution electron energy loss spectroscopy and a combination of density functional theory and tight-binding approaches. We show that the periodic moiré superlattice originated by the lattice mismatch in graphene/Ru(0001) induces the emergence of an extra mode, which is not present in graphene/Ni(111). Contrary to the ordinary intra-band plasmon of doped graphene, the extra mode is robust in charge-neutral graphene/metal contacts, having its origin in electron-hole inter-band transitions between van Hove singularities that emerge in the reconstructed band structure, due to the moiré pattern superlattice. △ Less

Submitted 19 January, 2017; v1 submitted 11 April, 2016; originally announced April 2016.

Comments: Supplemental materials available at http://www.theorphys.science.ru.nl/people/yuan/

Journal ref: 2D Materials 4.2 (2017): 021001

Inverse Funnel Effect of Excitons in Strained Black Phosphorus

Authors: Pablo San-Jose, Vincenzo Parente, Francisco Guinea, Rafael Roldán, Elsa Prada

Abstract: We study the effects of strain on the properties and dynamics of Wannier excitons in monolayer (phosphorene) and few-layer black phosphorus (BP), a promising two-dimensional material for optoelectronic applications due to its high mobility, mechanical strength and strain-tuneable direct band gap. We compare the results to the case of molybdenum disulphide (MoS$_2$) monolayers. We find that the so-… ▽ More We study the effects of strain on the properties and dynamics of Wannier excitons in monolayer (phosphorene) and few-layer black phosphorus (BP), a promising two-dimensional material for optoelectronic applications due to its high mobility, mechanical strength and strain-tuneable direct band gap. We compare the results to the case of molybdenum disulphide (MoS$_2$) monolayers. We find that the so-called funnel effect, i.e. the possibility of controlling exciton motion by means of inhomogeneous strains, is much stronger in few-layer BP than in MoS$_2$ monolayers and, crucially, is of opposite sign. Instead of excitons accumulating isotropically around regions of high tensile strain like in MoS$_2$, excitons in BP are pushed away from said regions. This \emph{inverse} funnel effect is moreover highly anisotropic, with much larger funnel distances along the armchair crystallographic direction, leading to a directional focusing of exciton flow. A strong inverse funnel effect could enable simpler designs of funnel solar cells, and offer new possibilities for the manipulation and harvesting of light. △ Less

Submitted 28 September, 2016; v1 submitted 5 April, 2016; originally announced April 2016.

Comments: 11 pages, 7 figures and 3 tables. Final published version

Journal ref: Phys. Rev. X 6, 031046 (2016)

Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus

Authors: Shengjun Yuan, Edo van Veen, Mikhail I. Katsnelson, Rafael Roldán

Abstract: We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy spectrum into equidistant Landau levels, with different cyclotron frequencies for the electron and hole bands. The applied voltage reduces the band gap, and eventual… ▽ More We study the quantum Hall effect of 2D electron gas in black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic field leads to a quantization of the energy spectrum into equidistant Landau levels, with different cyclotron frequencies for the electron and hole bands. The applied voltage reduces the band gap, and eventually a semiconductor to semimetal transition takes place. This nontrivial phase is characterized by the emergence of a pair of Dirac points in the spectrum. As a consequence, the Landau levels are not equidistant anymore, but follow the $\varepsilon_n\propto \sqrt{nB}$ characteristic of Dirac crystals as graphene. By using the Kubo-Bastin formula in the context of the kernel polynomial method, we compute the Hall conductivity of the system. We obtain a $σ_{xy}\propto 2n$ quantization of the Hall conductivity in the gapped phase (standard quantum Hall effect regime), and a $σ_{xy}\propto 4(n+1/2)$ quantization in the semimetalic phase, characteristic of Dirac systems with non-trivial topology. △ Less

Submitted 28 June, 2016; v1 submitted 20 December, 2015; originally announced December 2015.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 93, 245433 (2016)

Strong modulation of optical properties in black phosphorus through strain-engineered rippling

Authors: Jorge Quereda, Pablo San-José, Vincenzo Parente, Luis Vaquero-Garzon, Aday Molina-Mendoza, Nicolás Agraït, Gabino Rubio-Bollinger, Francisco Guinea, Rafael Roldán, Andres Castellanos-Gomez

Abstract: Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets sub… ▽ More Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices. △ Less

Submitted 21 April, 2016; v1 submitted 3 September, 2015; originally announced September 2015.

Comments: 16 pages main text + 13 pages SI

Theory of strain in single-layer transition metal dichalcogenides

Authors: Habib Rostami, Rafael Roldán, Emmanuele Cappelluti, Reza Asgari, Francisco Guinea

Abstract: Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive a… ▽ More Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive an effective low-energy model valid around the K point of the BZ, which includes terms up to second order in momentum and strain. For a generic profile of strain, we show that the solutions for this model can be expressed in terms of the harmonic oscillator and double quantum well models, for the valence and conduction bands respectively. We further study the shift of the position of the electron and hole band edges due to uniform strain. Finally, we discuss the importance of spin-strain coupling in these 2D semiconducting materials. △ Less

Submitted 22 November, 2015; v1 submitted 12 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 92, 195402 (2015)

Screening and plasmons in pure and disordered single- and bilayer black phosphorus

Authors: Fengping Jin, Rafael Roldán, Mikhail I. Katsnelson, Shengjun Yuan

Abstract: We study collective plasmon excitations and screening of disordered single- and bilayer black phosphorus beyond the low energy continuum approximation. The dynamical polarizability of phosphorene is computed using a tight-binding model that properly accounts for the band structure in a wide energy range. Electron-electron interaction is considered within the Random Phase Approximation. Damping of… ▽ More We study collective plasmon excitations and screening of disordered single- and bilayer black phosphorus beyond the low energy continuum approximation. The dynamical polarizability of phosphorene is computed using a tight-binding model that properly accounts for the band structure in a wide energy range. Electron-electron interaction is considered within the Random Phase Approximation. Damping of the plasmon modes due to different kinds of disorder, such as resonant scatterers and long-range disorder potentials, is analyzed. We further show that an electric field applied perpendicular to bilayer phosphorene can be used to tune the dispersion of the plasmon modes. For sufficiently large electric field, the bilayer BP enters in a topological phase with a characteristic plasmon spectrum, which is gaped in the armchair direction. △ Less

Submitted 24 July, 2015; originally announced July 2015.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 92, 115440 (2015)

Magneto-electronic properties of multilayer black phosphorus

Authors: Yongjin Jiang, Rafael Roldán, Francisco Guinea, Tony Low

Abstract: We examine the electronic properties of 2D electron gas in black phosphorus multilayers in the presence of a perpendicular magnetic field, highlighting the role of in-plane anisotropy on various experimental quantities such as ac magneto-conductivity, screening, and magneto-plasmons. We find that resonant structures in the ac conductivity exhibits a red-shift with increasing doping due to inter-ba… ▽ More We examine the electronic properties of 2D electron gas in black phosphorus multilayers in the presence of a perpendicular magnetic field, highlighting the role of in-plane anisotropy on various experimental quantities such as ac magneto-conductivity, screening, and magneto-plasmons. We find that resonant structures in the ac conductivity exhibits a red-shift with increasing doping due to inter-band coupling, $γ$. This arises from an extra correction term in the Landau energy spectrum proportional to $n^2γ^2$ ($n$ is Landau index), up to second order in $γ$. We found also that Coulomb interaction leads to highly anisotropic magneto-excitons. △ Less

Submitted 1 May, 2015; originally announced May 2015.

Comments: 8 pages, 5 figures

Strain engineering in semiconducting two-dimensional crystals

Authors: Rafael Roldán, Andres Castellanos-Gomez, Emmanuele Cappelluti, Francisco Guinea

Abstract: One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, h… ▽ More One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed. △ Less

Submitted 23 July, 2015; v1 submitted 29 April, 2015; originally announced April 2015.

Comments: Review Article. 23 pages, 16 figures

Journal ref: J. Phys.: Condens. Matter 27, 313201 (2015)

Strain dependent elastic modulus of graphene

Authors: Guillermo López-Polín, Miriam Jaafar, Francisco Guinea, Rafael Roldán, Cristina Gómez-Navarro, Julio Gómez-Herrero

Abstract: Indentation experiments on graphene membranes pre-stressed by hydrostatic pressure show an increase in effective elastic modulus from 300 N/m in non pressurized membranes to 700 N/m for pre-strains above 0.5 %. This pronounced dependence of the stiffness of graphene with strain is attributed to its high anharmonicity and the great influence of out of plane corrugations of this atomic thick membran… ▽ More Indentation experiments on graphene membranes pre-stressed by hydrostatic pressure show an increase in effective elastic modulus from 300 N/m in non pressurized membranes to 700 N/m for pre-strains above 0.5 %. This pronounced dependence of the stiffness of graphene with strain is attributed to its high anharmonicity and the great influence of out of plane corrugations of this atomic thick membrane in its mechanical properties. Our experimental findings imply that graphene measured stiffness is highly influenced by the presence of corrugations and that the in plane elastic modulus corresponding to atomic bond stretching is more akin to 700 N/m, instead of the commonly accepted 340 N/m. △ Less

Submitted 21 April, 2015; originally announced April 2015.

Comments: 17 pages and 4 figures

Journal ref: Carbon 124, 42-48, (2017)

Novel effects of strains in graphene and other two dimensional materials

Authors: B. Amorim, A. Cortijo, F. de Juan, A. G. Grushin, F. Guinea, A. Gutiérrez-Rubio, H. Ochoa, V. Parente, R. Roldán, P. San-José, J. Schiefele, M. Sturla, M. A. H. Vozmediano

Abstract: The analysis of the electronic properties of strained or lattice deformed graphene combines ideas from classical condensed matter physics, soft matter, and geometrical aspects of quantum field theory (QFT) in curved spaces. Recent theoretical and experimental work shows the influence of strains in many properties of graphene not considered before, such as electronic transport, spin-orbit coupling,… ▽ More The analysis of the electronic properties of strained or lattice deformed graphene combines ideas from classical condensed matter physics, soft matter, and geometrical aspects of quantum field theory (QFT) in curved spaces. Recent theoretical and experimental work shows the influence of strains in many properties of graphene not considered before, such as electronic transport, spin-orbit coupling, the formation of Moiré patterns, optics, ... There is also significant evidence of anharmonic effects, which can modify the structural properties of graphene. These phenomena are not restricted to graphene, and they are being intensively studied in other two dimensional materials, such as the metallic dichalcogenides. We review here recent developments related to the role of strains in the structural and electronic properties of graphene and other two dimensional compounds. △ Less

Submitted 15 March, 2016; v1 submitted 2 March, 2015; originally announced March 2015.

Comments: 75 pages, 15 figures, review article

Journal ref: Physics Reports 617, 1 - 54 (2016)

Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

Authors: Lu Hua Li, Elton J. G. Santos, Tan Xing, Emmanuele Cappelluti, Rafael Roldán, Ying Chen, Kenji Watanabe, Takashi Taniguchi

Abstract: Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy al… ▽ More Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide and many other 2D nanomaterials based electronic and photonic devices. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration and non-linear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness. △ Less

Submitted 1 March, 2015; originally announced March 2015.

Journal ref: Nano Letters 15(1), 218-223, 2015

Reply to 'Comment on "Thermodynamics of quantum crystalline membranes"'

Authors: B. Amorim, R. Roldán, E. Cappelluti, F. Guinea, A. Fasolino, M. I. Katsnelson

Abstract: In this note, we reply to the comment made by E.I.Kats and V.V.Lebedev [arXiv:1407.4298] on our recent work "Thermodynamics of quantum crystalline membranes" [Phys. Rev. B 89, 224307 (2014)]. Kats and Lebedev question the validity of the calculation presented in our work, in particular on the use of a Debye momentum as a ultra-violet regulator for the theory. We address and counter argue the criti… ▽ More In this note, we reply to the comment made by E.I.Kats and V.V.Lebedev [arXiv:1407.4298] on our recent work "Thermodynamics of quantum crystalline membranes" [Phys. Rev. B 89, 224307 (2014)]. Kats and Lebedev question the validity of the calculation presented in our work, in particular on the use of a Debye momentum as a ultra-violet regulator for the theory. We address and counter argue the criticisms made by Kats and Lebedev to our work. △ Less

Submitted 9 October, 2014; originally announced October 2014.

Comments: 5 pages, 4 figures

Electronic properties of single-layer and multilayer transition metal dichalcogenides $MX_2$ ($M=$ Mo, W and $X=$ S, Se)

Authors: R. Roldán, J. A. Silva-Guillén, M. P. López-Sancho, F. Guinea, E. Cappelluti, P. Ordejón

Abstract: Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculatio… ▽ More Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, we discuss the band structure of single-layer, bilayer and bulk compounds. The band structure of these compounds is highly sensitive to elastic deformations, and we review how strain engineering can be used to manipulate and tune the electronic and optical properties of those materials. We further discuss the effect of disorder and imperfections in the lattice structure and their effect on the optical and transport properties of $MX_2$. The superconducting transition in these compounds, which has been observed experimentally, is analyzed, as well as the different mechanisms proposed so far to explain the pairing. Finally, we include a discussion on the excitonic effects which are present in these systems. △ Less

Submitted 8 October, 2014; originally announced October 2014.

Comments: 9 pages, 4 figures. Short review article for special issue of Ann. Phys. on "Two-dimensional materials"

Journal ref: Ann. Phys. (Berlin) 526, 347 (2014)

Plasmons and screening in monolayer and multilayer black phosphorus

Authors: Tony Low, Rafael Roldán, Han Wang, Fengnian Xia, Phaedon Avouris, Luis Martín Moreno, Francisco Guinea

Abstract: Black phosphorus exhibits a high degree of band anisotropy. However, we found that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band non-parabolicity leads to a plasmon frequency which scales as $n^β$, where $n$ is the ca… ▽ More Black phosphorus exhibits a high degree of band anisotropy. However, we found that its in-plane static screening remains relatively isotropic for momenta relevant to elastic long-range scattering processes. On the other hand, the collective electronic excitations in the system exhibit a strong anisotropy. Band non-parabolicity leads to a plasmon frequency which scales as $n^β$, where $n$ is the carrier concentration, and $β<\tfrac{1}{2}$. Screening and charge distribution in the out-of-plane direction are also studied using a non-linear Thomas-Fermi model. △ Less

Submitted 16 April, 2014; v1 submitted 15 April, 2014; originally announced April 2014.

Journal ref: Phys. Rev. Lett. 113, 106802 (2014)

Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2

Authors: S. Yuan, R. Roldán, M. I. Katsnelson, F. Guinea

Abstract: Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of semiconducting transition metal dichalcogenides with the form $M$S$_2$, where $M$=Mo or W. The electronic structure is considered within a six bands tight-binding mod… ▽ More Imperfections in the crystal structure, such as point defects, can strongly modify the optical and transport properties of materials. Here, we study the effect of point defects on the optical and DC conductivities of single layers of semiconducting transition metal dichalcogenides with the form $M$S$_2$, where $M$=Mo or W. The electronic structure is considered within a six bands tight-binding model, which accounts for the relevant combination of $d$ orbitals of the metal $M$ and $p$ orbitals of the chalcogen $S$. We use the Kubo formula for the calculation of the conductivity in samples with different distributions of disorder. We find that $M$ and/or S defects create mid-gap states that localize charge carriers around the defects and which modify the optical and transport properties of the material, in agreement with recent experiments. Furthermore, our results indicate a much higher mobility for $p$-doped WS$_2$ in comparison to MoS$_2$. △ Less

Submitted 3 July, 2014; v1 submitted 7 April, 2014; originally announced April 2014.

Journal ref: Phys. Rev. B 90, 041402 (2014)

Thermodynamics of quantum crystalline membranes

Authors: B. Amorim, R. Roldán, E. Cappelluti, A. Fasolino, F. Guinea, M. I. Katsnelson

Abstract: We investigate the thermodynamic properties and the lattice stability of two-dimensional crystalline membranes, such as graphene and related compounds, in the low temperature quantum regime $T\rightarrow0$. A key role is played by the anharmonic coupling between in-plane and out-of plane lattice modes that, in the quantum limit, has very different consequences than in the classical regime. The rol… ▽ More We investigate the thermodynamic properties and the lattice stability of two-dimensional crystalline membranes, such as graphene and related compounds, in the low temperature quantum regime $T\rightarrow0$. A key role is played by the anharmonic coupling between in-plane and out-of plane lattice modes that, in the quantum limit, has very different consequences than in the classical regime. The role of retardation, namely of the frequency dependence, in the effective anharmonic interactions turns out to be crucial in the quantum regime. We identify a crossover temperature, $T^{*}$, between classical and quantum regimes, which is $\sim 70 - 90$ K for graphene. Below $T^{*}$, the heat capacity and thermal expansion coefficient decrease as power laws with decreasing temperature, tending to zero for $T\rightarrow0$ as required by the third law of thermodynamics. △ Less

Submitted 30 June, 2014; v1 submitted 11 March, 2014; originally announced March 2014.

Comments: 13 pages, 1 figure

Journal ref: Phys. Rev. B 89, 224307 (2014)

Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides

Authors: R. Roldán, M. P. López-Sancho, E. Cappelluti, J. A. Silva-Guillén, P. Ordejón, F. Guinea

Abstract: One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs,… ▽ More One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs, including explicitly the role of the chalcogen orbitals and their hybridization with the transition metal atoms. To this aim, we combine density functional theory (DFT) calculations with a Slater-Koster tight-binding model. Whereas most of the previous tight-binding models have been restricted to the K and K' points of the Brillouin zone (BZ), here we consider the effect of SOC in the whole BZ, and the results are compared to the band structure obtained by DFT methods. The tight-binding model is used to analyze the effect of SOC in the band structure, considering separately the contributions from the transition metal and the chalcogen atoms. Finally, we present a scenario where, in the case of strong SOC, the spin/orbital/valley entanglement at the minimum of the conduction band at Q can be probed and be of experimental interest in the most common cases of electron-doping reported for this family of compounds. △ Less

Submitted 17 November, 2014; v1 submitted 20 January, 2014; originally announced January 2014.

Comments: 12 pages, 6 figures

Journal ref: 2D Materials 1, 034003 (2014)

Screening and Collective Modes in Disordered Graphene Antidot Lattices

Authors: Shengjun Yuan, Fengping Jin, Rafael Roldán, Antti-Pekka Jauho, M. I. Katsnelson

Abstract: The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $π$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase approximation. The effect of different kinds of disorder, such as geometric and chemical disorder, are included in our calculations. We highlight the main differ… ▽ More The excitation spectrum and the collective modes of graphene antidot lattices (GALs) are studied in the context of a $π$-band tight-binding model. The dynamical polarizability and dielectric function are calculated within the random phase approximation. The effect of different kinds of disorder, such as geometric and chemical disorder, are included in our calculations. We highlight the main differences of GALs with respect to single-layer graphene (SLG). Our results show that, in addition to the well-understood bulk plasmon in doped samples, inter-band plasmons appear in GALs. We further show that the static screening properties of undoped and doped GALs are quantitatively different from SLG. △ Less

Submitted 5 November, 2013; v1 submitted 19 September, 2013; originally announced September 2013.

Comments: 12 pages; Replaced with published version

Journal ref: Phys. Rev. B 88, 195401 (2013)

Dielectric screening and plasmons in AA-stacked bilayer graphene

Authors: Rafael Roldan, Luis Brey

Abstract: The screening properties and collective excitations (plasmons) in AA-stacked bilayer graphene are studied within the random phase approximation (RPA). Whereas long lived plasmons in single layer graphene and in AB-stacked bilayer graphene can exist only in doped samples, we find that coherent plasmons can disperse in AA-stacked bilayer graphene {\it even in the absence of doping}. Moreover, we sho… ▽ More The screening properties and collective excitations (plasmons) in AA-stacked bilayer graphene are studied within the random phase approximation (RPA). Whereas long lived plasmons in single layer graphene and in AB-stacked bilayer graphene can exist only in doped samples, we find that coherent plasmons can disperse in AA-stacked bilayer graphene {\it even in the absence of doping}. Moreover, we show that the characteristic low energy dispersion relation is unaffected by changes in the number of carriers, unless the chemical potential of the doped sample exceeds the inter-layer hopping energy. We further consider the effect of an external electric field applied perpendicular to the layers, and show how the dispersion of the modes can be tuned by the application of a gate voltage. △ Less

Submitted 18 September, 2013; v1 submitted 3 July, 2013; originally announced July 2013.

Comments: 7 pages; 4 figures. Published version

Journal ref: Phys. Rev. B 88, 115420 (2013)

Local strain engineering in atomically thin MoS2

Authors: Andres Castellanos-Gomez, Rafael Roldán, Emmanuele Cappelluti, Michele Buscema, Francisco Guinea, Herre S. J. van der Zant, Gary A. Steele

Abstract: Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to… ▽ More Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices. △ Less

Submitted 4 December, 2013; v1 submitted 17 June, 2013; originally announced June 2013.

Comments: Supp.Info. not included here, available following a link included in the text

Journal ref: Nano Lett., 2013, 13 (11), pp 5361-5366

Collisionless Hydrodynamics of Doped Graphene in a Magnetic Field

Authors: R. Roldán, J. -N. Fuchs, M. O. Goerbig

Abstract: The electrodynamics of a two-dimensional gas of massless fermions in graphene is studied by a collisionless hydrodynamic approach. A low-energy dispersion relation for the collective modes (plasmons) is derived both in the absence and in the presence of a perpendicular magnetic field. The results for graphene are compared to those for a standard two-dimensional gas of massive electrons. We further… ▽ More The electrodynamics of a two-dimensional gas of massless fermions in graphene is studied by a collisionless hydrodynamic approach. A low-energy dispersion relation for the collective modes (plasmons) is derived both in the absence and in the presence of a perpendicular magnetic field. The results for graphene are compared to those for a standard two-dimensional gas of massive electrons. We further compare the results within the classical hydrodynamic approach to the full quantum mechanical calculation in the random phase approximation. The low-energy dispersion relation is shown to be a good approximation at small wave vectors. The limitations of this approach at higher order is also discussed. △ Less

Submitted 7 May, 2013; originally announced May 2013.

Comments: 7 pages, 1 figure

Journal ref: Solid State Commun 175-176, 114 (2013)

Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS$_2$

Authors: E. Cappelluti, R. Roldán, J. A. Silva-Guillén, P. Ordejón, F. Guinea

Abstract: In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modelling of the single-layer hopping terms by simply adding the proper interlayer hoppings ruled by the chalcogenide… ▽ More In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modelling of the single-layer hopping terms by simply adding the proper interlayer hoppings ruled by the chalcogenide atoms. We show that such tight-binding model permits to understand and control in a natural way the transition between a direct-gap band structure, in single-layer systems, to an indirect gap in multilayer compounds in terms of a momentum/orbital selective interlayer splitting of the relevant valence and conduction bands. The model represents also a suitable playground to investigate in an analytical way strain and finite-size effects. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Journal ref: Phys. Rev. B 88, 075409 (2013)

Effects of structural and chemical disorders on the visible/UV spectra of carbonaceous interstellar grains

Authors: R. J. Papoular, S. Yuan, R. Roldan, M. I. Katsnelson, R. Papoular

Abstract: The recent spectacular progress in the experimental and theoretical understanding of graphene, the basic constituent of graphite, is applied here to compute, from first principles, the UV extinction of nano-particles made of stacks of graphene layers. The theory also covers cases where graphene is affected by structural, chemical or orientation disorder, each disorder type being quantitatively def… ▽ More The recent spectacular progress in the experimental and theoretical understanding of graphene, the basic constituent of graphite, is applied here to compute, from first principles, the UV extinction of nano-particles made of stacks of graphene layers. The theory also covers cases where graphene is affected by structural, chemical or orientation disorder, each disorder type being quantitatively defined by a single parameter. The extinction bumps carried by such model materials are found to have positions and widths falling in the same range as the known astronomical 2175 Åfeatures: as the disorder parameter increases, the bump width increases from 0.85 to 2.5 $μ$m$^{-1}$, while its peak position shifts from 4.65 to 4.75 $μ$m$^{-1}$. Moderate degrees of disorder are enough to cover the range of widths of the vast majority of observed bumps (0.75 to 1.3 $μ$m$^{-1}$). Higher degrees account for outliers, also observed in the sky. The introduction of structural or chemical disorder amounts to changing the initial $sp^{2}$ bondings into $sp^{3}$ or $sp^{1}$, so the optical properties of the model material become similar to those of the more or less amorphous carbon-rich materials studied in the laboratory: a-C, a-C:H, HAC, ACH, coals etc. The present treatment thus bridges gaps between physically different model materials. △ Less

Submitted 17 April, 2013; originally announced April 2013.

Comments: 14 pages, 16 figures, to appear in MNRAS

Spin-Orbit mediated spin relaxation in monolayer MoS2

Authors: H. Ochoa, R. Roldán

Abstract: We study the intra-valley spin-orbit mediated spin relaxation in monolayers of MoS2 within a two bands effective Hamiltonian. The intrinsic spin splitting of the valence band as well as a Rashba-like coupling due to the breaking of the out-of-plane inversion symmetry are considered. We show that, in the hole doped regime, the out-of-plane spin relaxation is not very efficient since the spin splitt… ▽ More We study the intra-valley spin-orbit mediated spin relaxation in monolayers of MoS2 within a two bands effective Hamiltonian. The intrinsic spin splitting of the valence band as well as a Rashba-like coupling due to the breaking of the out-of-plane inversion symmetry are considered. We show that, in the hole doped regime, the out-of-plane spin relaxation is not very efficient since the spin splitting of the valence band tends to stabilize the spin polarization in this direction. We obtain spin lifetimes larger than nanoseconds, in agreement with recent valley polarization experiments. △ Less

Submitted 17 June, 2013; v1 submitted 23 March, 2013; originally announced March 2013.

Comments: final version, 9 pages, 5 figures

Journal ref: Phys. Rev. B 87, 245421 (2013)

Interactions and superconductivity in heavily doped MoS2

Authors: R. Roldan, E. Cappelluti, F. Guinea

Abstract: We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS$_2$. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long range Coulomb interactions, the short range electronic repulsion, and the relative weakness of the electron-phonon interactions, makes possible the exi… ▽ More We analyze the microscopic origin and the physical properties of the superconducting phase recently observed in MoS$_2$. We show how the combination of the valley structure of the conduction band, the density dependence of the screening of the long range Coulomb interactions, the short range electronic repulsion, and the relative weakness of the electron-phonon interactions, makes possible the existence of a phase where the superconducting order parameter has opposite signs in different valleys, resembling the superconductivity found in the pnictides and cuprates. △ Less

Submitted 21 January, 2013; originally announced January 2013.

Journal ref: Physical Review B vol. 88, 054515 (2013)

Electronic Properties of Disordered Graphene Antidot Lattices

Authors: Shengjun Yuan, Rafael Roldán, Antti-Pekka Jauho, M. I. Katsnelson

Abstract: Regular nanoscale perforations in graphene (graphene antidot lattices, GAL) are known to lead to a gap in the energy spectrum, thereby paving a possible way towards many applications. This theoretical prediction relies on a perfect placement of identical perforations, a situation not likely to occur in the laboratory. Here, we present a systematic study of the effects of disorder in GALs. We consi… ▽ More Regular nanoscale perforations in graphene (graphene antidot lattices, GAL) are known to lead to a gap in the energy spectrum, thereby paving a possible way towards many applications. This theoretical prediction relies on a perfect placement of identical perforations, a situation not likely to occur in the laboratory. Here, we present a systematic study of the effects of disorder in GALs. We consider both geometric and chemical disorder, and evaluate the density-of-states as well as the optical conductivity of disordered GALs. The theoretical method is based on an efficient algorithm for solving the time-dependent Schr{ö}dinger equation in a tight-binding representation of the graphene sheet [S. Yuan et al., Phys. Rev. B 82, 115448 (2010)], which allows us to consider GALs consisting of 6400 $\times$ 6400 carbon atoms. The central conclusion for all kinds of disorder is that the gaps found for pristine GALs do survive at a considerable amount of disorder, but disappear for very strong disorder. Geometric disorder is more detrimental to gap formation than chemical disorder. The optical conductivity shows a low-energy tail below the pristine GAL band gap due to disorder-introduced transitions. △ Less

Submitted 23 November, 2012; originally announced November 2012.

Comments: 9 pages, 5 figures

Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling

Authors: Andres Castellanos-Gomez, Emmanuele Cappelluti, Rafael Roldán, Nicolás Agraït, Francisco Guinea, Gabino Rubio-Bollinger

Abstract: The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experi… ▽ More The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2. △ Less

Submitted 6 November, 2012; v1 submitted 2 November, 2012; originally announced November 2012.

Comments: 13 pages, 3 figures, include supporting information

Journal ref: Advanced Materials, Vol. 25, Iss. 6, pp 899-903 (2013)

Polarization of graphene in a strong magnetic field beyond the Dirac cone approximation

Authors: Shengjun Yuan, Rafael Roldán, Mikhail I. Katsnelson

Abstract: In this paper we study the excitation spectrum of graphene in a strong magnetic field, beyond the Dirac cone approximation. The dynamical polarizability is obtained using a full $π$-band tight-binding model where the effect of the magnetic field is accounted for by means of the Peierls substitution. The effect of electron-electron interaction is considered within the random phase approximation, fr… ▽ More In this paper we study the excitation spectrum of graphene in a strong magnetic field, beyond the Dirac cone approximation. The dynamical polarizability is obtained using a full $π$-band tight-binding model where the effect of the magnetic field is accounted for by means of the Peierls substitution. The effect of electron-electron interaction is considered within the random phase approximation, from which we obtain the dressed polarization function and the dielectric function. The range of validity of the Landau level quantization within the continuum approximation is studied, as well as the non-trivial quantization of the spectrum around the Van Hove singularity. We further discuss the effect of disorder, which leads to a smearing of the absorption peaks, and temperature, which activates additional inter-Landau level transitions induced by the Fermi distribution function. △ Less

Submitted 21 January, 2012; originally announced January 2012.

Comments: 11 pages, 10 figures

Journal ref: Solid State Comm. 152, 1446 (2012)

Optical conductivity of disordered graphene beyond the Dirac cone approximation

Authors: Shengjun Yuan, Rafael Roldán, Hans De Raedt, Mikhail I. Katsnelson

Abstract: In this paper we systemically study the optical conductivity and density of states of disorded graphene beyond the Dirac cone approximation. The optical conductivity of graphene is computed by using the Kubo formula, within the framework of a full π-band tight-binding model. Different types of non-correlated and correlated disorders are considered, such as random or Gaussian potentials, random or… ▽ More In this paper we systemically study the optical conductivity and density of states of disorded graphene beyond the Dirac cone approximation. The optical conductivity of graphene is computed by using the Kubo formula, within the framework of a full π-band tight-binding model. Different types of non-correlated and correlated disorders are considered, such as random or Gaussian potentials, random or Gaussian nearest-neighbor hopping parameters, randomly distributed vacancies or their clusters, and random adsorbed hydrogen atoms or their clusters. For a large enough concentration of resonant impurities, a new peak in the optical conductivity is found, associated to transitions between the midgap states and the Van Hove singularities of the main π-band. We further discuss the effect of doping on the spectrum, and find that small amounts of resonant impurities are enough to obtain a background contribution to the conductivity in the infra-red part of the spectrum, in agreement with recent experiments. △ Less

Submitted 15 September, 2011; originally announced September 2011.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. B 84, 195418 (2011)

Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene

Authors: Shengjun Yuan, Rafael Roldán, Mikhail I. Katsnelson

Abstract: We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a π-band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC s… ▽ More We study the Landau level spectrum of ABA- and ABC-stacked trilayer graphene. We derive analytic low energy expressions for the spectrum, the validity of which is confirmed by comparison to a π-band tight-binding calculation of the density of states on the honeycomb lattice. We further study the effect of a perpendicular electric field on the spectrum, where a zero-energy plateau appears for ABC stacking order, due to the opening of a gap at the Dirac point, while the ABA-stacked trilayer graphene remains metallic. We discuss our results in the context of recent electronic transport experiments. Furthermore, we argue that the expressions obtained can be useful in the analysis of future measurements of cyclotron resonance of electrons and holes in trilayer graphene. △ Less

Submitted 30 June, 2011; originally announced July 2011.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 84, 125455 (2011)

Spin-density-wave instability in graphene doped near the van Hove singularity

Authors: D. Makogon, R. van Gelderen, R. Roldán, C. Morais Smith

Abstract: We study the instability of the metallic state towards the formation of a new ground state in graphene doped near the van Hove singularity. The system is described by the Hubbard model and a field theoretical approach is used to calculate the charge and spin susceptibility. We find that for repulsive interactions, within the random phase approximation, there is a competition between ferromagnetism… ▽ More We study the instability of the metallic state towards the formation of a new ground state in graphene doped near the van Hove singularity. The system is described by the Hubbard model and a field theoretical approach is used to calculate the charge and spin susceptibility. We find that for repulsive interactions, within the random phase approximation, there is a competition between ferromagnetism and spin-density wave (SDW). It turns out that a SDW with a triangular geometry is more favorable when the Hubbard parameter is above the critical value U_c(T), which depends on the temperature T, even if there are small variations in the doping. Our results can be verified by ARPES or neutron scattering experiments in highly doped graphene. △ Less

Submitted 15 September, 2011; v1 submitted 28 April, 2011; originally announced April 2011.

Comments: 5 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 84, 125404 (2011)

Excitation spectrum and high energy plasmons in single- and multi-layer graphene

Authors: Shengjun Yuan, Rafael Roldán, Mikhail I. Katsnelson

Abstract: In this paper we study the excitation spectrum of single- and multi-layer graphene beyond the Dirac cone approximation. The dynamical polarizability of graphene is computed using a full $π$-band tight-binding model, considering the possibility of inter-layer hopping in the calculation. The effect of electron-electron interaction is considered within the random phase approximation. We further discu… ▽ More In this paper we study the excitation spectrum of single- and multi-layer graphene beyond the Dirac cone approximation. The dynamical polarizability of graphene is computed using a full $π$-band tight-binding model, considering the possibility of inter-layer hopping in the calculation. The effect of electron-electron interaction is considered within the random phase approximation. We further discuss the effect of disorder in the spectrum, which leads to a smearing of the absorption peaks. Our results show a redshift of the $π$-plasmon dispersion of single-layer graphene with respect to graphite, in agreement with experimental results. The inclusion of inter-layer hopping in the kinetic Hamiltonian of multi-layer graphene is found to be very important to properly capture the low energy region of the excitation spectrum. △ Less

Submitted 28 July, 2011; v1 submitted 28 March, 2011; originally announced March 2011.

Comments: Final version appeared in PRB

Journal ref: Phys. Rev. B 84, 035439 (2011)

Suppression of anharmonicities in crystalline membranes by external strain

Authors: Rafael Roldán, Annalisa Fasolino, Kostyantyn V. Zakharchenko, Mikhail I. Katsnelson

Abstract: In practice, physical membranes are exposed to a certain amount of external strain (tension or compression), due to the environment where they are placed. As a result, the behavior of the phonon modes of the membrane is modified. We show that anharmonic effects in stiff two-dimensional membranes are highly suppressed under the application of tension. For this, we consider the anharmonic coupling b… ▽ More In practice, physical membranes are exposed to a certain amount of external strain (tension or compression), due to the environment where they are placed. As a result, the behavior of the phonon modes of the membrane is modified. We show that anharmonic effects in stiff two-dimensional membranes are highly suppressed under the application of tension. For this, we consider the anharmonic coupling between bending and stretching modes in the self-consistent screening approximation (SCSA), and compare the obtained height-height correlation function in the SCSA to the corresponding harmonic propagator. The elasticity theory results are compared to atomistic Monte Carlo simulations for a graphene membrane under tension. We find that, while rather high values of strain are needed to avoid anharmonicity in soft membranes, strain fields less than 1% are enough to suppress all the anharmonic effects in stiff membranes, as graphene. △ Less

Submitted 11 May, 2011; v1 submitted 31 January, 2011; originally announced January 2011.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 83, 174104 (2011)

Theory of Bernstein Modes in Graphene

Authors: R. Roldan, M. O. Goerbig, J. -N. Fuchs

Abstract: We present a theoretical description of Bernstein modes that arise as a result of the coupling between plasmon-like collective excitations (upper-hybrid mode) and inter-Landau-level excitations, in graphene in a perpendicular magnetic field. These modes, which are apparent as avoided level crossings in the spectral function obtained in the random-phase approximation, are described to great accurac… ▽ More We present a theoretical description of Bernstein modes that arise as a result of the coupling between plasmon-like collective excitations (upper-hybrid mode) and inter-Landau-level excitations, in graphene in a perpendicular magnetic field. These modes, which are apparent as avoided level crossings in the spectral function obtained in the random-phase approximation, are described to great accuracy in a phenomenological model. Bernstein modes, which may be measured in inelastic light-scattering experiments or in photo-conductivity spectroscopy, are a manifestation of the Coulomb interaction between the electrons and may be used for a high-precision measurement of the upper-hybrid mode at small non-zero wave vectors. △ Less

Submitted 23 April, 2011; v1 submitted 3 December, 2010; originally announced December 2010.

Comments: 5 pages. 2 figures; slightly extended version, title changed; accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 83, 205406 (2011)

Spin-flip excitations, spin waves, and magneto-excitons in graphene Landau levels at integer filling factors

Authors: R. Roldan, J. -N. Fuchs, M. O. Goerbig

Abstract: We study collective electronic excitations in graphene in the integer quantum Hall regime, concentrating mainly on excitations with spin reversal such as spin-flip and spin-wave excitations. We show that these excitations are correctly accounted for in the time-dependent Hartree-Fock and strong magnetic field approximations, in contrast to spin-conserving (magneto-exciton) modes which involve a st… ▽ More We study collective electronic excitations in graphene in the integer quantum Hall regime, concentrating mainly on excitations with spin reversal such as spin-flip and spin-wave excitations. We show that these excitations are correctly accounted for in the time-dependent Hartree-Fock and strong magnetic field approximations, in contrast to spin-conserving (magneto-exciton) modes which involve a strong Landau-level mixing at non-zero wave vectors. The collective excitations are discussed in view of prominent theorems, such as Kohn's and Larmor's. Whereas the latter remains valid in graphene and yields insight into the understanding of spin-dependent modes, Kohn's theorem does not apply to relativistic electrons in graphene. We finally calculate the exchange correction to the chemical potential in the weak magnetic field limit. △ Less

Submitted 11 November, 2010; v1 submitted 31 August, 2010; originally announced August 2010.

Comments: Replaced with published version. 13 pages, 4 figures

Journal ref: Phys. Rev. B 82, 205418 (2010)

Self-Consistent Screening Approximation for Flexible Membranes: Application to Graphene

Authors: K. V. Zakharchenko, R. Roldan, A. Fasolino, M. I. Katsnelson

Abstract: Crystalline membranes at finite temperatures have an anomalous behavior of the bending rigidity that makes them more rigid in the long wavelength limit. This issue is particularly relevant for applications of graphene in nano- and micro-electromechanical systems. We calculate numerically the height-height correlation function $G(q)$ of crystalline two-dimensional membranes, determining the renorma… ▽ More Crystalline membranes at finite temperatures have an anomalous behavior of the bending rigidity that makes them more rigid in the long wavelength limit. This issue is particularly relevant for applications of graphene in nano- and micro-electromechanical systems. We calculate numerically the height-height correlation function $G(q)$ of crystalline two-dimensional membranes, determining the renormalized bending rigidity, in the range of wavevectors $q$ from $10^{-7}$ Å$^{-1}$ till 10 Å$^{-1}$ in the self-consistent screening approximation (SCSA). For parameters appropriate to graphene, the calculated correlation function agrees reasonably with the results of atomistic Monte Carlo simulations for this material within the range of $q$ from $10^{-2}$ Å$^{-1}$ till 1 Å$^{-1}$. In the limit $q\rightarrow 0$ our data for the exponent $η$ of the renormalized bending rigidity $κ_R(q)\propto q^{-η}$ is compatible with the previously known analytical results for the SCSA $η\simeq 0.82$. However, this limit appears to be reached only for $q<10^{-5}$ Å$^{-1}$ whereas at intermediate $q$ the behavior of $G(q)$ cannot be described by a single exponent. △ Less

Submitted 20 September, 2010; v1 submitted 8 June, 2010; originally announced June 2010.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 82, 125435 (2010)

The magnetic field particle-hole excitation spectrum in doped graphene and in a standard two-dimensional electron gas

Authors: R. Roldan, M. O. Goerbig, J. -N. Fuchs

Abstract: The particle-hole excitation spectrum for doped graphene is calculated from the dynamical polarizability. We study the zero and finite magnetic field cases and compare them to the standard two-dimensional electron gas. The effects of electron-electron interaction are included within the random phase approximation. From the obtained polarizability, we study the screening effects and the collectiv… ▽ More The particle-hole excitation spectrum for doped graphene is calculated from the dynamical polarizability. We study the zero and finite magnetic field cases and compare them to the standard two-dimensional electron gas. The effects of electron-electron interaction are included within the random phase approximation. From the obtained polarizability, we study the screening effects and the collective excitations (plasmon, magneto-excitons, upper-hybrid mode and linear magneto-plasmons). We stress the differences with the usual 2DEG. △ Less

Submitted 9 November, 2009; v1 submitted 15 September, 2009; originally announced September 2009.

Comments: Invited review article in Semicond. Sci. Technol.; accepted for publication

Journal ref: Semicond. Sci. Technol. 25, 034005 (2010)