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Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process
Authors:
S. V. Amitonov,
A. Aprà,
M. Asker,
B. Barry,
I. Bashir,
P. Bisiaux,
E. Blokhina,
P. Giounanlis,
P. Hanos-Puskai,
M. Harkin,
I. Kriekouki,
D. Leipold,
M. Moras,
C. Power,
N. Samkharadze,
A. Sokolov,
D. Redmond,
C. Rohrbacher,
X. Wu
Abstract:
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in…
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Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in the device channel by applying a combination of a back- and gate voltages. We report our results on an effective detuning of the energy levels in the quantum dots by varying the barrier gate voltages in combination with the back-gate voltage. Given the need and importance of scaling to larger numbers of qubits, we demonstrate here the feasibility of single-electron box sensors at the edge of the quantum dot array for effective charge sensing in different operation modes -- sensing charge transitions in a single- and double quantum dots forming the quantum dot array. We also report measurement results demonstrating bias triangle pair formation and precise control over coupled quantum dots with variations in the inter-dot barrier. The reported measurement results demonstrate the ability to control the formation and coupling of multiple quantum dots in a quantum dot array and to sense their charge state via a Single Electron Box sensor in a commercial process for the first time.
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Submitted 20 December, 2024; v1 submitted 11 December, 2024;
originally announced December 2024.
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Experimental online quantum dots charge autotuning using neural networks
Authors:
Victor Yon,
Bastien Galaup,
Claude Rohrbacher,
Joffrey Rivard,
Alexis Morel,
Dominic Leclerc,
Clement Godfrin,
Ruoyu Li,
Stefan Kubicek,
Kristiaan De Greve,
Eva Dupont-Ferrier,
Yann Beilliard,
Roger G. Melko,
Dominique Drouin
Abstract:
Spin-based semiconductor qubits hold promise for scalable quantum computing, yet they require reliable autonomous calibration procedures. This study presents an experimental demonstration of online single-dot charge autotuning using a convolutional neural network integrated into a closed-loop calibration system. The autotuning algorithm explores the gates' voltage space to localize charge transiti…
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Spin-based semiconductor qubits hold promise for scalable quantum computing, yet they require reliable autonomous calibration procedures. This study presents an experimental demonstration of online single-dot charge autotuning using a convolutional neural network integrated into a closed-loop calibration system. The autotuning algorithm explores the gates' voltage space to localize charge transition lines, thereby isolating the one-electron regime without human intervention. This exploration leverages the model's uncertainty estimation to find the appropriate gate configuration with minimal measurements while reducing the risk of failures. In 20 experimental runs, our method achieved a success rate of 95% in locating the target electron regime, highlighting the robustness of this approach against noise and distribution shifts from the offline training set. Each tuning run lasted an average of 2 hours and 9 minutes, primarily due to the limited speed of the current measurement. This work validates the feasibility of machine learning-driven real-time charge autotuning for quantum dot devices, advancing the development toward the control of large qubit arrays.
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Submitted 11 February, 2025; v1 submitted 30 September, 2024;
originally announced September 2024.
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Robust quantum dots charge autotuning using neural network uncertainty
Authors:
Victor Yon,
Bastien Galaup,
Claude Rohrbacher,
Joffrey Rivard,
Clément Godfrin,
Ruoyu Li,
Stefan Kubicek,
Kristiaan De Greve,
Louis Gaudreau,
Eva Dupont-Ferrier,
Yann Beilliard,
Roger G. Melko,
Dominique Drouin
Abstract:
This study presents a machine-learning-based procedure to automate the charge tuning of semiconductor spin qubits with minimal human intervention, addressing one of the significant challenges in scaling up quantum dot technologies. This method exploits artificial neural networks to identify noisy transition lines in stability diagrams, guiding a robust exploration strategy leveraging neural networ…
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This study presents a machine-learning-based procedure to automate the charge tuning of semiconductor spin qubits with minimal human intervention, addressing one of the significant challenges in scaling up quantum dot technologies. This method exploits artificial neural networks to identify noisy transition lines in stability diagrams, guiding a robust exploration strategy leveraging neural networks' uncertainty estimations. Tested across three distinct offline experimental datasets representing different single quantum dot technologies, the approach achieves over 99% tuning success rate in optimal cases, where more than 10% of the success is directly attributable to uncertainty exploitation. The challenging constraints of small training sets containing high diagram-to-diagram variability allowed us to evaluate the capabilities and limits of the proposed procedure.
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Submitted 30 October, 2024; v1 submitted 7 June, 2024;
originally announced June 2024.
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Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot
Authors:
C. Rohrbacher,
J. Rivard,
R. Ritzenthaler,
B. Bureau,
C. Lupien,
H. Mertens,
N. Horiguchi,
E. Dupont-Ferrier
Abstract:
As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the electrical properties of Gate-All-Around (GAA) n-MOSFETs Si nanowires (NWs) from room temperature down to 1.7 K. We demonstrate that those devices can operate…
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As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the electrical properties of Gate-All-Around (GAA) n-MOSFETs Si nanowires (NWs) from room temperature down to 1.7 K. We demonstrate that those devices can operate both as transistor and host quantum dots at cryogenic temperature. In the classical regime of the transistor we show improved performances of the devices and in the quantum regime we show systematic quantum dots formation in GAA devices.
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Submitted 1 December, 2023;
originally announced December 2023.
