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Temperature dependent ARPES of the metallic-like bands in Si(553)-Au
Authors:
Lenart Dudy,
Julian Aulbach,
Jörg Schäfer,
Ralph Claessen,
Victor Rogalev,
Piotr Chudzinski
Abstract:
We conducted a thorough investigation into the temperature dependence of the metallic-like bands of Si(553)-Au using angular-resolved photoemission spectroscopy (ARPES). Our study addresses the challenges posed by the short-term stability of the surface and photo-voltage effects, which we overcame to extract changes in the band-filling and Fermi-velocity. Our findings shed light on the low-tempera…
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We conducted a thorough investigation into the temperature dependence of the metallic-like bands of Si(553)-Au using angular-resolved photoemission spectroscopy (ARPES). Our study addresses the challenges posed by the short-term stability of the surface and photo-voltage effects, which we overcame to extract changes in the band-filling and Fermi-velocity. Our findings shed light on the low-temperature phase of the step edge in Si(553)-Au, which has been a topic of ongoing debate regarding its structural or electronic nature. Through comparison with theoretical predictions of a structural-related low-temperature to high-temperature phase transition, we discovered that the band-filling and Fermi-velocity do not change accordingly, thereby ruling out this scenario. Our study contributes to a better understanding of this material system and provides an important reference for future research.
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Submitted 14 June, 2023; v1 submitted 25 March, 2022;
originally announced March 2022.
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Tailoring the topological surface state in ultrathin $α$-Sn (111) films
Authors:
Victor A. Rogalev,
Felix Reis,
Florian Adler,
Maximilian Bauernfeind,
Jonas Erhardt,
André Kowalewski,
Markus R. Scholz,
Lenart Dudy,
Liam B. Duffy,
Thorsten Hesjedal,
Moritz Hoesch,
Gustav Bihlmayer,
Jörg Schäfer,
Ralph Claessen
Abstract:
We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV be…
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We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick $α$-Sn films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of $α$-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states.
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Submitted 6 December, 2019; v1 submitted 24 October, 2019;
originally announced October 2019.
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Three-dimensionality of mobile electrons at X-ray-irradiated LaAlO$_3$/SrTiO$_3$ interfaces
Authors:
V. N. Strocov,
M. -A. Husanu,
A. Chikina,
L. L. Lev,
V. A. Rogalev,
T. Schmitt,
F. Lechermann
Abstract:
Effects of X-ray irradiation on the electronic structure of LaAlO$_3$/SrTiO$_3$ (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At thi…
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Effects of X-ray irradiation on the electronic structure of LaAlO$_3$/SrTiO$_3$ (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex-situ till recovery of their stoichiometry, were investigated by soft-X-ray ARPES. The irradiation at low sample temperature below ~100K creates oxygen vacancies (VOs) injecting Ti t2g-electrons into the interfacial mobile electron system (MES). At this temperature the oxygen out-diffusion is suppressed, and the VOs are expected to appear mostly in the top STO layer. However, we observe a pronounced three-dimensional (3D) character of the X-ray generated MES in our samples, indicating its large extension into the STO depth, which contrasts to the purely two-dimensional (2D) character of the MES in standard stoichiometric LAO/STO samples. Based on self-interaction-corrected DFT calculations of the MES induced by VOs at the interface and in STO bulk, we discuss possible mechanisms of this puzzling three-dimensionality. They may involve VOs remnant in the deeper STO layers, photoconductivity-induced metallic states as well as more exotic mechanisms such as X-ray induced formation of Frenkel pairs.
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Submitted 23 September, 2021; v1 submitted 9 September, 2019;
originally announced September 2019.
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Non-trivial topological valence bands of common diamond and zinc-blende semiconductors
Authors:
Tomáš Rauch,
Victor A. Rogalev,
Maximilian Bauernfeind,
Julian Maklar,
Felix Reis,
Florian Adler,
Simon Moser,
Johannes Weis,
Tien-Lin Lee,
Pardeep K. Thakur,
Jörg Schäfer,
Ralph Claessen,
Jürgen Henk,
Ingrid Mertig
Abstract:
The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the F…
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The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the Fermi energy. Our parity analysis shows that the spin-orbit split-off band near the valence band maximum exhibits a strong topologically non-trivial behavior characterized by the $\mathcal{Z}_2$ invariants $(1;000)$. The non-trivial character emerges instantaneously with non-zero spin-orbit coupling, in contrast to the conventional topological phase transition mechanism. \textit{Ab initio}-based tight-binding calculations resolve topological surface states in the occupied electronic structure of InSb and GaAs, further confirmed experimentally by soft X-ray angle-resolved photoemission from both materials. Our findings are valid for all other materials whose valence bands are adiabatically linked to those of InSb, i.e., many diamond and zinc-blende semiconductors, as well as other related materials, such as half-Heusler compounds.
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Submitted 10 April, 2019;
originally announced April 2019.
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The topological surface state of $α$-Sn on InSb(001) as studied by photoemission
Authors:
M. R. Scholz,
V. A. Rogalev,
L. Dudy,
F. Reis,
F. Adler,
J. Aulbach,
L. J. Collins-McIntyre,
L. B. Duffy,
H. F. Yang,
Y. L. Chen,
T. Hesjedal,
Z. K. Liu,
M. Hoesch,
S. Muff,
J. H. Dil,
J. Schäfer,
R. Claessen
Abstract:
We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type doping of the as-grown films was compensated by…
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We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type doping of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We show that, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.
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Submitted 29 November, 2017;
originally announced November 2017.
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Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
Authors:
P. Schütz,
D. V. Christensen,
V. Borisov,
F. Pfaff,
P. Scheiderer,
L. Dudy,
M. Zapf,
J. Gabel,
Y. Z. Chen,
N. Pryds,
V. A. Rogalev,
V. N. Strocov,
C. Schlueter,
T. -L. Lee,
H. O. Jeschke,
R. Valentí,
M. Sing,
R. Claessen
Abstract:
The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy…
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The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures.
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Submitted 16 October, 2017;
originally announced October 2017.
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A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases
Authors:
Ilya Belopolski,
Su-Yang Xu,
Nikesh Koirala,
Chang Liu,
Guang Bian,
Vladimir N. Strocov,
Guoqing Chang,
Madhab Neupane,
Nasser Alidoust,
Daniel Sanchez,
Hao Zheng,
Matthew Brahlek,
Victor Rogalev,
Timur Kim,
Nicholas C. Plumb,
Chaoyu Chen,
François Bertran,
Patrick Le Fèvre,
Amina Taleb-Ibrahimi,
Maria-Carmen Asensio,
Ming Shi,
Hsin Lin,
Moritz Hoesch,
Seongshik Oh,
M. Zahid Hasan
Abstract:
Engineered lattices in condensed matter physics, such as cold atom optical lattices or photonic crystals, can have fundamentally different properties from naturally-occurring electronic crystals. Here, we report a novel type of artificial quantum matter lattice. Our lattice is a multilayer heterostructure built from alternating thin films of topological and trivial insulators. Each interface withi…
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Engineered lattices in condensed matter physics, such as cold atom optical lattices or photonic crystals, can have fundamentally different properties from naturally-occurring electronic crystals. Here, we report a novel type of artificial quantum matter lattice. Our lattice is a multilayer heterostructure built from alternating thin films of topological and trivial insulators. Each interface within the heterostructure hosts a set of topologically-protected interface states, and by making the layers sufficiently thin, we demonstrate for the first time a hybridization of interface states across layers. In this way, our heterostructure forms an emergent atomic chain, where the interfaces act as lattice sites and the interface states act as atomic orbitals, as seen from our measurements by angle-resolved photoemission spectroscopy (ARPES). By changing the composition of the heterostructure, we can directly control hopping between lattice sites. We realize a topological and a trivial phase in our superlattice band structure. We argue that the superlattice may be characterized in a significant way by a one-dimensional topological invariant, closely related to the invariant of the Su-Schrieffer-Heeger model. Our topological insulator heterostructure demonstrates a novel experimental platform where we can engineer band structures by directly controlling how electrons hop between lattice sites.
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Submitted 13 March, 2017;
originally announced March 2017.
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Selective probing of hidden spin-polarized states in inversion-symmetric bulk MoS2
Authors:
E. Razzoli,
T. Jaouen,
M. -L. Mottas,
B. Hildebrand,
G. Monney,
A. Pisoni,
S. Muff,
M. Fanciulli,
N. C. Plumb,
V. A. Rogalev,
V. N. Strocov,
J. Mesot,
M. Shi,
J. H. Dil,
H. Beck,
P. Aebi
Abstract:
Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly-polarized light. Calculations based on a three-step model of photoemission show that the valley and layer…
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Spin- and angle-resolved photoemission spectroscopy is used to reveal that a large spin polarization is observable in the bulk centrosymmetric transition metal dichalcogenide MoS2. It is found that the measured spin polarization can be reversed by changing the handedness of incident circularly-polarized light. Calculations based on a three-step model of photoemission show that the valley and layer-locked spin-polarized electronic states can be selectively addressed by circularly-polarized light, therefore providing a novel route to probe these hidden spin-polarized states in inversion-symmetric systems as predicted by Zhang et al. [Nature Physics 10, 387 (2014)].
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Submitted 24 January, 2017;
originally announced January 2017.
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Double Band Inversion in $ α$-Sn: Appearance of Topological Surface States and the Role of Orbital Composition
Authors:
Victor A. Rogalev,
Tomáš Rauch,
Markus R. Scholz,
Felix Reis,
Lenart Dudy,
Andrzej Fleszar,
Marius-Adrian Husanu,
Vladimir N. Strocov,
Jürgen Henk,
Ingrid Mertig,
Jörg Schäfer,
Ralph Claessen
Abstract:
The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of t…
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The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of this state, which is a surface resonance, is confirmed by unravelling the band inversion and by calculating the topological invariants. In agreement with experiment, electronic structure calculations show the maximum density of states in the subsurface region, while the already established TSS near the Fermi level is strongly localized at the surface. Such varied behavior is explained by the differences in orbital composition between the specific TSS and its associated bulk states, respectively. This provides an orbital protection mechanism for topological states against mixing with the background of bulk bands.
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Submitted 16 February, 2017; v1 submitted 12 January, 2017;
originally announced January 2017.
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Weakly-correlated nature of ferromagnetism in non symmorphic CrO$_2$ revealed by bulk-sensitive soft X ray ARPES
Authors:
F. Bisti,
V. A. Rogalev,
M. Karolak,
S. Paul,
A. Gupta,
T. Schmitt,
G. Güntherodt,
V. Eyert,
G. Sangiovanni,
G. Profeta,
V. N. Strocov
Abstract:
Chromium dioxide CrO$_2$ belongs to a class of materials called ferromagnetic half-metals, whose peculiar aspect is to act as a metal in one spin orientation and as semiconductor or insulator in the opposite one. Despite numerous experimental and theoretical studies motivated by technologically important applications of this material in spintronics, its fundamental properties such as momentum reso…
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Chromium dioxide CrO$_2$ belongs to a class of materials called ferromagnetic half-metals, whose peculiar aspect is to act as a metal in one spin orientation and as semiconductor or insulator in the opposite one. Despite numerous experimental and theoretical studies motivated by technologically important applications of this material in spintronics, its fundamental properties such as momentum resolved electron dispersions and Fermi surface have so far remained experimentally inaccessible due to metastability of its surface that instantly reduces to amorphous Cr$_2$O$_3$. In this work, we demonstrate that direct access to the native electronic structure of CrO$_2$ can be achieved with soft-X-ray angle-resolved photoemission spectroscopy whose large probing depth penetrates through the Cr$_2$O$_3$ layer. For the first time the electronic dispersions and Fermi surface of CrO$_2$ are measured, which are fundamental prerequisites to solve the long debate on the nature of electronic correlations in this material. Since density functional theory augmented by a relatively weak local Coulomb repulsion gives an exhaustive description of our spectroscopic data, we rule out strong-coupling theories of CrO$_2$. Crucial for the correct interpretation of our experimental data in terms of the valence band dispersions is the understanding of a non-trivial spectral response of CrO$_2$ caused by interference effects in the photoemission process originating from the non-symmorphic space group of the rutile crystal structure of CrO$_2$.
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Submitted 9 November, 2017; v1 submitted 6 July, 2016;
originally announced July 2016.
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Fermi surface and effective masses in photoemission response of the (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ superconductor
Authors:
Gerald Derondeau,
Federico Bisti,
Masaki Kobayashi,
Jürgen Braun,
Hubert Ebert,
Victor A. Rogalev,
Ming Shi,
Junzhang Ma,
Hong Ding,
Thorsten Schmitt,
Vladimir N. Strocov,
Ján Minár
Abstract:
The angle-resolved photoemission spectra of the superconductor (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ have been investigated both experimentally and theoretically. Our results explain the previously obscured origins of all salient features of the ARPES response of this paradigm pnictide compound and reveal the origin of the Lifshitz transition. Comparison of calculated ARPES spectra with the underlying DMF…
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The angle-resolved photoemission spectra of the superconductor (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ have been investigated both experimentally and theoretically. Our results explain the previously obscured origins of all salient features of the ARPES response of this paradigm pnictide compound and reveal the origin of the Lifshitz transition. Comparison of calculated ARPES spectra with the underlying DMFT band structure shows an important impact of final state effects, which results for three-dimensional states in a deviation of the ARPES spectra from the true spectral function. In particular, the apparent effective mass enhancement seen in the ARPES response is not an entirely intrinsic property of the quasiparticle valence bands but may have a significant extrinsic contribution from the photoemission process and thus differ from its true value. Because this effect is more pronounced for low photoexcitation energies, soft-X-ray ARPES delivers more accurate values of the mass enhancement due to a sharp definition of the 3D electron momentum.
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Submitted 20 June, 2017; v1 submitted 29 June, 2016;
originally announced June 2016.
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Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics
Authors:
Leonid L. Lev,
Dmitry V. Averyanov,
Andrey M. Tokmachev,
Federico Bisti,
Victor A. Rogalev,
Vladimir N. Strocov,
Vyacheslav G. Storchak
Abstract:
Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic…
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Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.
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Submitted 15 March, 2016;
originally announced March 2016.
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Polaronic metal state at the LaAlO3/SrTiO3 interface
Authors:
C. Cancellieri,
A. S. Mishchenko,
U. Aschauer,
A. Filippetti,
C. Faber,
O. S. Barisic,
V. A. Rogalev,
T. Schmitt,
N. Nagaosa,
V. N. Strocov
Abstract:
Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 (LAO/STO) that hosts two-dimensional electron system (2DES). Apart from the…
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Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The paradigm example is the interface between the two band insulators LaAlO3 and SrTiO3 (LAO/STO) that hosts two-dimensional electron system (2DES). Apart from the mobile charge carriers, this system exhibits a range of intriguing properties such as field effect, superconductivity and ferromagnetism, whose fundamental origins are still debated. Here, we use soft-X-ray angle-resolved photoelectron spectroscopy to penetrate through the LAO overlayer and access charge carriers at the buried interface. The experimental spectral function directly identifies the interface charge carriers as large polarons, emerging from coupling of charge and lattice degrees of freedom, and involving two phonons of different energy and thermal activity. This phenomenon fundamentally limits the carrier mobility and explains its puzzling drop at high temperatures.
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Submitted 16 October, 2015; v1 submitted 16 July, 2015;
originally announced July 2015.
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Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance
Authors:
L. L. Lev,
J. Krempaský,
U. Staub,
V. A. Rogalev,
T. Schmitt,
M. Shi,
P. Blaha,
A. S. Mishchenko,
A. A. Veligzhanin,
Y. V. Zubavichus,
M. B. Tsetlin,
H. Volfová,
J. Braun,
J. Minár,
V. N. Strocov
Abstract:
Electronic structure of the three-dimensional colossal magnetoresistive perovskite La1-xSrxMnO3 has been established using soft-X-ray ARPES with its intrinsically sharp definition of three-dimensional electron momentum. The experimental results show much weaker polaronic coupling compared to the bilayer manganites and are consistent with the GGA+U band structure. The experimental Fermi surface unv…
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Electronic structure of the three-dimensional colossal magnetoresistive perovskite La1-xSrxMnO3 has been established using soft-X-ray ARPES with its intrinsically sharp definition of three-dimensional electron momentum. The experimental results show much weaker polaronic coupling compared to the bilayer manganites and are consistent with the GGA+U band structure. The experimental Fermi surface unveils the canonical topology of alternating three-dimensional electron spheres and hole cubes, with their shadow contours manifesting the rhombohedral lattice distortion. This picture has been confirmed by one-step photoemission calculations including displacement of the apical oxygen atoms. The rhombohedral distortion is neutral to the Jahn-Teller effect and thus polaronic coupling, but affects the double-exchange electron hopping and thus the colossal magnetoresistance effect.
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Submitted 1 June, 2015;
originally announced June 2015.
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Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric α-GeTe(111) semiconductor
Authors:
J. Krempaský,
H. Volfová,
S. Muff,
N. Pilet,
G. Landolt,
M. Radović,
M. Shi,
D. Kriegner,
V. Holý,
J. Braun,
H. Ebert,
F. Bisti,
V. A. Rogalev,
V. N. Strocov,
G. Springholz,
J. Minár,
J. H. Dil
Abstract:
In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large…
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In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba-splitting coupled to ferroelectricity: the ferroelectric Rashba semiconductors (FERS). Using spin- and angle-resolved photoemission spectroscopy (SARPES) we show that GeTe(111) forms a prime member of this class, displaying a complex spin-texture for the Rashba-split surface and bulk bands arising from the intrinsic inversion symmetry breaking caused by the ferroelectric polarization of the bulk (FE). Apart from pure surface and bulk states we find surface-bulk resonant states (SBR) whose wavefunctions entangle the spinors from the bulk and surface contributions. At the Fermi level their hybridization results in unconventional spin topologies with cochiral helicities and concomitant gap opening. The GeTe(111) surface and SBR states make the semiconductor surface conducting. At the same time our SARPES data confirm that GeTe is a narrow-gap semiconductor, suggesting that GeTe(111) electronic states are endowed with spin properties that are theoretically challenging to anticipate. As the helicity of the spins in Rashba bands is connected to the direction of the FE polarization, this work paves the way to all-electric non-volatile control of spin-transport properties in semiconductors.
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Submitted 17 March, 2015;
originally announced March 2015.
