Showing 1–50 of 51 results for author: Rodt, S

Resonant and Anti-resonant Exciton-Phonon Coupling in Quantum Dot Molecules

Authors: Michelle Lienhart, Krzysztof Gawarecki, Markus Stöcker, Frederik Bopp, Charlotte Cullip, Nadeem Akhlaq, Christopher Thalacker, Johannes Schall, Sven Rodt, Arne Ludwig, Dirk Reuter, Stephan Reitzenstein, Kai Müller, Paweł Machnikowski, Jonathan J. Finley

Abstract: Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to… ▽ More Optically active quantum dot molecules (QDMs) can host multi-spin quantum states with the potential for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the generation of such non-classical states of light is determined by orbital and spin decoherence mechanisms, particularly phonon-mediated processes dominant at energy scales up to a few millielectronvolts. Here, we directly measure the spectral function of orbital phonon relaxation in a QDM and benchmark our findings against microscopic kp theory. Our results reveal phonon-mediated relaxation rates exhibiting pronounced resonances and anti-resonances, with rates ranging from several ten ns$^{-1}$ to tens of $μ$s$^{-1}$. Comparison with a kinetic model reveals the voltage (energy) dependent phonon coupling strength and fully explains the interplay between phonon-assisted relaxation and radiative recombination. These anti-resonances can be leveraged to increase the lifetime of energetically unfavorable charge configurations needed for realizing efficient spin-photon interfaces and multi-dimensional cluster states. △ Less

Submitted 14 May, 2025; originally announced May 2025.

On-demand storage and retrieval of single photons from a semiconductor quantum dot in a room-temperature atomic vapor memory

Authors: Benjamin Maaß, Avijit Barua, Norman Vincenz Ewald, Elizabeth Robertson, Kartik Gaur, Suk In Park, Sven Rodt, Jin-Dong Song, Stephan Reitzenstein, Janik Wolters

Abstract: Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a… ▽ More Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of $η_\mathrm{int}=0.6(1)\%$. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures. △ Less

Submitted 26 January, 2025; originally announced January 2025.

Bright electrically contacted circular Bragg grating resonators with deterministically integrated quantum dots

Authors: Setthanat Wijitpatima, Normen Auler, Priyabata Mudi, Timon Funk, Avijit Barua, Binamra Shrestha, Imad Limame, Sven Rodt, Dirk Reuter, Stephan Reitzenstein

Abstract: Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in… ▽ More Cavity-enhanced emission of electrically controlled semiconductor quantum dots is essential in developing bright quantum devices for real-world quantum photonic applications. Combining the circular Bragg grating (CBG) approach with a PIN-diode structure, we propose and implement an innovative concept for ridge-based electrically-contacted CBG resonators. Through fine-tuning of device parameters in numerical simulations and deterministic nanoprocessing, we produced electrically controlled single quantum dot CBG resonators with excellent electro-optical emission properties. These include multiple wavelength-tunable emission lines and a photon extraction efficiency (PEE) of up to (30.4$\pm$3.4)%, where refined numerical optimization based on experimental findings suggests a substantial improvement, promising PEE >50%. Additionally, the developed quantum light sources yield single-photon purity reaching (98.8$\pm$0.2)% [post-selected: (99.5$\pm$0.3)%] and a photon indistinguishability of (25.8$\pm$2.1)% [post-selected: (92.8$\pm$4.8)%]. Our results pave the way for high-performance quantum devices with combined cavity enhancement and deterministic charge-environment controls, advancing the development of photonic quantum information systems such as complex quantum repeater networks. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Authors: Imad Limame, Ching-Wen Shih, Alexej Koltchanov, Fabian Heisinger, Felix Nippert, Moritz Plattner, Johannes Schall, Markus R. Wagner, Sven Rodt, Petr Klenovsky, Stephan Reitzenstein

Abstract: We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering,… ▽ More We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve separation in emission energy by about 150 meV of positioned and non-positioned quantum dots and a local increase of the emitter density in a single layer. Furthermore, we achieve a threefold increase of the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is particularly valuable for using the SCQDs in microlaser applications. Moreover, we obtain direct control over emission properties by adjusting the growth and fabrication parameters. Our optimization of site-controlled growth of quantum dots enables the development of photonic devices with enhanced light-matter interaction and microlasers with increased confinement factor and spontaneous emission coupling efficiency. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Authors: Michael Seidel, Yuhui Yang, Thorsten Schumacher, Yongheng Huo, Saimon Filipe Covre da Silva, Sven Rodt, Armando Rastelli, Stephan Reitzenstein, Markus Lippitz

Abstract: Key requirements for quantum plasmonic nanocircuits are reliable single-photon sources, high coupling efficiency to the plasmonic structures and low propagation losses. Self-assembled epitaxially grown GaAs quantum dots are close to ideal stable, bright and narrowband single-photon emitters. Likewise, wet-chemically grown monocrystalline silver nanowires are among the best plasmonic waveguides. Ho… ▽ More Key requirements for quantum plasmonic nanocircuits are reliable single-photon sources, high coupling efficiency to the plasmonic structures and low propagation losses. Self-assembled epitaxially grown GaAs quantum dots are close to ideal stable, bright and narrowband single-photon emitters. Likewise, wet-chemically grown monocrystalline silver nanowires are among the best plasmonic waveguides. However, large propagation losses of surface plasmons on the high-index GaAs substrate prevent their direct combination. Here, we show by experiment and simulation that the best overall performance of the quantum plasmonic nanocircuit based on these building blocks is achieved in the intermediate field regime with an additional spacer layer between the quantum dot and the plasmonic waveguide. High-resolution cathodoluminescence measurements allow a precise determination of the coupling distance and support a simple analytical model to explain the overall performance. The coupling efficiency is increased up to four times by standing wave interference near the end of the waveguide. △ Less

Submitted 26 October, 2023; originally announced October 2023.

Comments: Accepted at ACS Nano Letters; contains main text and supporting information

High-$β$ lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots

Authors: Kartik Gaur, Ching-Wen Shih, Imad Limame, Aris Koulas-Simos, Niels Heermeier, Chirag C. Palekar, Sarthak Tripathi, Sven Rodt, Stephan Reitzenstein

Abstract: We report an easy-to-fabricate microcavity design to produce optically pumped high-$β$ quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight lateral mode confinement in a quasi-planar microcavity system, which includes an upper dielectric distributed Bragg reflector (DBR) as a promising alternative to conventional III-V semiconductor DBRs. Through the integrati… ▽ More We report an easy-to-fabricate microcavity design to produce optically pumped high-$β$ quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight lateral mode confinement in a quasi-planar microcavity system, which includes an upper dielectric distributed Bragg reflector (DBR) as a promising alternative to conventional III-V semiconductor DBRs. Through the integration of a photonic-defect, we achieve low mode volumes as low as 0.28 $μ$m$^3$, leading to enhanced light-matter interaction, without the additional need for complex lateral nanoprocessing of micropillars. We fabricate semiconductor-dielectric hybrid microcavities, consisting of Al$_{0.9}$Ga$_{0.1}$As/GaAs bottom DBR with 33.5 mirror pairs, dielectric SiO$_{2}$/SiN$_x$ top DBR with 5, 10, 15, and 19 mirror pairs, and photonic-defects with varying lateral size in the range of 1.5 $μ$m to 2.5 $μ$m incorporated into a one-$λ/n$ GaAs cavity with InGaAs quantum dots as active medium. The cavities show distinct emission features with a characteristic photonic defect size-dependent mode separation and \emph{Q}-factors up to 17000 for 19 upper mirror pairs in excellent agreement with numeric simulations. Comprehensive investigations further reveal lasing operation with a systematic increase (decrease) of the $β$-factor (threshold pump power) with the number of mirror pairs in the upper dielectric DBR. Notably, due to the quasi-planar device geometry, the microlasers show high temperature stability, evidenced by the absence of temperature-induced red-shift of emission energy and linewidth broadening typically observed for nano- and microlasers at high excitation powers. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy

Authors: Daniel Wigger, Johannes Schall, Marielle Deconinck, Nikolai Bart, Paweł Mrowiński, Mateusz Krzykowski, Krzysztof Gawarecki, Martin von Helversen, Ronny Schmidt, Lucas Bremer, Frederik Bopp, Dirk Reuter, Andreas D. Wieck, Sven Rodt, Julien Renard, Gilles Nogues, Arne Ludwig, Paweł Machnikowski, Jonathan J. Finley, Stephan Reitzenstein, Jacek Kasprzak

Abstract: Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical s… ▽ More Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes. △ Less

Submitted 20 April, 2023; originally announced April 2023.

Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule

Authors: Frederik Bopp, Charlotte Cullip, Christopher Thalacker, Michelle Lienhart, Johannes Schall, Nikolai Bart, Friedrich Sbresny, Katarina Boos, Sven Rodt, Dirk Reuter, Arne Ludwig, Andreas D. Wieck, Stephan Reitzenstein, Filippo Troiani, Guido Goldoni, Elisa Molinari, Kai Müller, Jonathan J. Finley

Abstract: Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions… ▽ More Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions within the quantum dots, leading to a decrease of the tunnel coupling strength. We achieve a tuning of the coupling strength by $(53.4\pm1.7)$ %. The ability to fine-tune this coupling is essential for quantum network and computing applications that require quantum systems with near identical performance. △ Less

Submitted 22 March, 2023; originally announced March 2023.

Comments: Main: 6 pages, 3 figures, Supplemental: 4 pages, 2 figures

Coherent driving of direct and indirect excitons in a quantum dot molecule

Authors: Frederik Bopp, Johannes Schall, Nikolai Bart, Florian Vogl, Charlotte Cullip, Friedrich Sbresny, Katarina Boos, Christopher Thalacker, Michelle Lienhart, Sven Rodt, Dirk Reuter, Arne Ludwig, Andreas Wieck, Stephan Reitzenstein, Kai Müller, Jonathan J. Finley

Abstract: Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybri… ▽ More Quantum dot molecules (QDMs) are one of the few quantum light sources that promise deterministic generation of one- and two-dimensional photonic graph states. The proposed protocols rely on coherent excitation of the tunnel-coupled and spatially indirect exciton states. Here, we demonstrate power-dependent Rabi oscillations of direct excitons, spatially indirect excitons, and excitons with a hybridized electron wave function. An off-resonant detection technique based on phonon-mediated state transfer allows for spectrally filtered detection under resonant excitation. Applying a gate voltage to the QDM-device enables a continuous transition between direct and indirect excitons and, thereby, control of the overlap of the electron and hole wave function. This does not only vary the Rabi frequency of the investigated transition by a factor of $\approx3$, but also allows to optimize graph state generation in terms of optical pulse power and reduction of radiative lifetimes. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 107, 165426 (2023)

Scalable deterministic integration of two quantum dots into an on-chip quantum circuit

Authors: Shulun Li, Yuhui Yang, Johannes Schall, Martin von Helversen, Chirag Palekar, Hanqing Liu, Léo Roche, Sven Rodt, Haiqiao Ni, Yu Zhang, Zhichuan Niu, Stephan Reitzenstein

Abstract: Integrated quantum photonic circuits (IQPCs) with deterministically integrated quantum emitters are critical elements for scalable quantum information applications and have attracted significant attention in recent years. However, scaling up them towards fully functional photonic circuits with multiple deterministically integrated quantum emitters to generate photonic input states remains a great… ▽ More Integrated quantum photonic circuits (IQPCs) with deterministically integrated quantum emitters are critical elements for scalable quantum information applications and have attracted significant attention in recent years. However, scaling up them towards fully functional photonic circuits with multiple deterministically integrated quantum emitters to generate photonic input states remains a great challenge. In this work, we report on a monolithic prototype IQPC consisting of two pre-selected quantum dots deterministically integrated into nanobeam cavities at the input ports of a 2x2 multimode interference beam-splitter. The on-chip beam splitter exhibits a splitting ratio of nearly 50/50 and the integrated quantum emitters have high single-photon purity, enabling on-chip HBT experiments, depicting deterministic scalability. Overall, this marks a cornerstone toward scalable and fully-functional IQPCs. △ Less

Submitted 14 March, 2023; v1 submitted 29 December, 2022; originally announced December 2022.

Numerical optimization of single-mode fiber-coupled single-photon sources based on semiconductor quantum dots

Authors: Lucas Bremer, Carlos Jimenez, Simon Thiele, Ksenia Weber, Tobias Huber, Sven Rodt, Alois Herkommer, Sven Burger, Sven Höfling, Harald Giessen, Stephan Reitzenstein

Abstract: We perform extended numerical studies to maximize the overall photon coupling efficiency of fiber-coupled quantum dot single-photon sources emitting in the near-infrared and telecom regime. Using the finite element method, we optimize the photon extraction and fiber-coupling efficiency of quantum dot single-photon sources based on micromesas, microlenses, circular Bragg grating cavities and microp… ▽ More We perform extended numerical studies to maximize the overall photon coupling efficiency of fiber-coupled quantum dot single-photon sources emitting in the near-infrared and telecom regime. Using the finite element method, we optimize the photon extraction and fiber-coupling efficiency of quantum dot single-photon sources based on micromesas, microlenses, circular Bragg grating cavities and micropillars. The numerical simulations which consider the entire system consisting of the quantum dot source itself, the coupling lens, and the single-mode fiber yield overall photon coupling efficiencies of up to 83%. Our work provides objectified comparability of different fiber-coupled single-photon sources and proposes optimized geometries for the realization of practical and highly efficient quantum dot single-photon sources. △ Less

Submitted 19 February, 2022; originally announced February 2022.

Journal ref: Opt. Express 30, 15913 (2022)

Bright electrically controllable quantum-dot-molecule devices fabricated by in-situ electron-beam lithography

Authors: Johannes Schall, Marielle Deconinck, Nikolai Bart, Matthias Florian, Martin von Helversen, Christian Dangel, Ronny Schmidt, Lucas Bremer, Frederik Bopp, Isabell Hüllen, Christopher Gies, Dirk Reuter, Andreas D. Wieck, Sven Rodt, Jonathan J. Finley, Frank Jahnke, Arne Ludwig, Stephan Reitzenstein

Abstract: Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable s… ▽ More Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$\pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 \pm 0.5) \cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware. △ Less

Submitted 8 April, 2021; v1 submitted 10 January, 2021; originally announced January 2021.

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

Authors: Paweł Holewa, Marek Burakowski, Anna Musiał, Nicole Srocka, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring exte… ▽ More Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However, their practical use in fiber-based quantum communication depends heavily on the possibility of operation in the telecom bands and at temperatures not requiring extensive cryogenic systems. In this paper we present a temperature-dependent study on single QD emission and single-photon emission from metalorganic vapour-phase epitaxy-grown InGaAs/GaAs QDs emitting in the telecom O-band. Micro-photoluminescence studies reveal that trapped holes in the vicinity of a QD act as reservoir of carriers that can be exploited to enhance photoluminescence from trion states observed at elevated temperatures up to at least 80 K. The luminescence quenching is mainly related to the promotion of holes to higher states in the valence band and this aspect must be primarily addressed in order to further increase the thermal stability of emission. Photon autocorrelation measurements yield single photon emission with a purity of $g_{50\mathrm{K}}^{(2)}\left(0\right)=0.13$ up to 50 K. Our results imply that these nanostructures are very promising candidates for single-photon sources at elevated temperatures in the telecom O-band and highlight means for improvements in their performance. △ Less

Submitted 19 November, 2020; v1 submitted 20 October, 2020; originally announced October 2020.

Comments: 3 figures

Journal ref: Scientific Reports 10, 21816 (2020)

Deterministically fabricated strain-tunable quantum dot single-photon sources emitting in the telecom O-band

Authors: Nicole Srocka, Pawel Mrowiński, Jan Große, Marco Schmidt, Sven Rodt, Stephan Reitzenstein

Abstract: Most quantum communication schemes aim at the long-distance transmission of quantum information. In the quantum repeater concept, the transmission line is subdivided into shorter links interconnected by entanglement distribution via Bell-state measurements to overcome inherent channel losses. This concept requires on-demand single-photon sources with a high degree of multi-photon suppression and h… ▽ More Most quantum communication schemes aim at the long-distance transmission of quantum information. In the quantum repeater concept, the transmission line is subdivided into shorter links interconnected by entanglement distribution via Bell-state measurements to overcome inherent channel losses. This concept requires on-demand single-photon sources with a high degree of multi-photon suppression and high indistinguishability within each repeater node. For a successful operation of the repeater, a spectral matching of remote quantum light sources is essential. We present a spectrally tunable single-photon source emitting in the telecom O-band with the potential to function as a building block of a quantum communication network based on optical fibers. A thin membrane of GaAs embedding InGaAs quantum dots (QDs) is attached onto a piezoelectric actuator via gold thermocompression bonding. Here the thin gold layer acts simultaneously as an electrical contact, strain transmission medium and broadband backside mirror for the QD-micromesa. The nanofabrication of the QD-micromesa is based on in-situ electron-beam lithography, which makes it possible to integrate pre-selected single QDs deterministically into the center of monolithic micromesa structures. The QD pre-selection is based on distinct single-QD properties, signal intensity and emission energy. In combination with strain-induced fine tuning this offers a robust method to achieve spectral resonance in the emission of remote QDs. We show that the spectral tuning has no detectable influence on the multi-photon suppression with $g^{(2)}(0)$ as low as 2-4% and that the emission can be stabilized to an accuracy of 4 $μ$eV using a closed-loop optical feedback. △ Less

Submitted 6 November, 2020; v1 submitted 26 September, 2020; originally announced September 2020.

Numerical Investigation of Light Emission from Quantum Dots Embedded into On-Chip, Low Index Contrast Optical Waveguides

Authors: Theresa Hoehne, Peter Schnauber, Sven Rodt, Stephan Reitzenstein, Sven Burger

Abstract: Single-photon emitters integrated into quantum optical circuits will enable new, miniaturized quantum optical devices. Here, we numerically investigate semiconductor quantum dots embedded to low refractive index contrast waveguides. We discuss a model to compute the coupling efficiency of the emitted light field to the fundamental propagation mode of the waveguide, and we optimize the waveguide di… ▽ More Single-photon emitters integrated into quantum optical circuits will enable new, miniaturized quantum optical devices. Here, we numerically investigate semiconductor quantum dots embedded to low refractive index contrast waveguides. We discuss a model to compute the coupling efficiency of the emitted light field to the fundamental propagation mode of the waveguide, and we optimize the waveguide dimensional parameters for maximum coupling efficiency. Further, we show that for a laterally cropped waveguide the interplay of Purcell-enhancement and optimized field profile can enhance the coupling efficiency by a factor of about two. △ Less

Submitted 18 June, 2020; originally announced June 2020.

Journal ref: Phys. Status Solidi B 256, 1800437 (2019)

Quantum dot single-photon emission coupled into single-mode fibers with 3D printed micro-objectives

Authors: Lucas Bremer, Ksenia Weber, Sarah Fischbach, Simon Thiele, Marco Schmidt, Arsenty Kakganskiy, Sven Rodt, Alois Herkommer, Marc Sartison, Simone Luca Portalupi, Peter Michler, Harald Giessen, Stephan Reitzenstein

Abstract: User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode optical fibers is mandatory, which leads to stringent requirements regarding the device design and fabrication. We report on the on-chip integration of a quant… ▽ More User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode optical fibers is mandatory, which leads to stringent requirements regarding the device design and fabrication. We report on the on-chip integration of a quantum dot microlens with a 3D-printed micro-objective in combination with a single-mode on-chip fiber coupler. The practical quantum device is realized by deterministic fabrication of the QD-microlens via in-situ electron-beam lithography and 3D two-photon laser writing of the on-chip micro-objective and fiber-holder. The QD with microlens is an efficient single-photon source, whose emission is collimated by the on-chip micro-objective. A second polymer microlens is located at the end facet of the single-mode fiber and ensures that the collimated light is efficiently coupled into the fiber core. For this purpose, the fiber is placed in the on-chip fiber chuck, which is precisely aligned to the QD-microlens thanks to the sub-$μ$m processing accuracy of high-resolution two-photon direct laser writing. This way, we obtain a fully integrated high-quality quantum device with broadband photon extraction efficiency, a single-mode fiber-coupling efficiency of 26%, a single-photon flux of 1.5 MHz at single-mode fibre output and a multi-photon probability of 13 % under pulsed optical excitation. In addition, the stable design of the developed fiber-coupled quantum device makes it highly attractive for integration into user-friendly plug-and-play quantum applications. △ Less

Submitted 22 May, 2020; originally announced May 2020.

Directional single-photon emission from deterministic quantum dot waveguide structures

Authors: Paweł Mrowiński, Peter Schnauber, Arsenty Kaganskiy, Johannes Schall, Sven Burger, Sven Rodt, Stephan Reitzenstein

Abstract: Chiral light-matter interaction can lead to directional emission of two-level light emitters in waveguides. This interesting physics effect has raised considerable attention in recent years especially in terms of on-chip quantum systems. In this context, our work focuses on tailoring single semiconductor quantum dot-waveguide (QD-WG) systems to emit single photons with high directionality. We use… ▽ More Chiral light-matter interaction can lead to directional emission of two-level light emitters in waveguides. This interesting physics effect has raised considerable attention in recent years especially in terms of on-chip quantum systems. In this context, our work focuses on tailoring single semiconductor quantum dot-waveguide (QD-WG) systems to emit single photons with high directionality. We use low-temperature in-situ electron-beam lithography enabled by cathodoluminescence mapping to select suitable QDs and to integrate them deterministically into linear waveguide structures at specific chiral points determined by numerical calculations. We observe excitonic and biexcitonic emission from the fabricated QD-WG structure in a confocal microPL setup enabling the optical characterization in terms of directional emission of circularly polarized photons emitted by integrated QDs. Our results show a high degree of anisotropy on the level of 54% for directional QD emission and antibunching in autocorrelation experiment confirming the fabricated QD-WG system, which is a prerequisite for using this effect in advanced applications in integrated quantum circuits. △ Less

Submitted 19 May, 2020; originally announced May 2020.

Journal ref: Phys. Status Solidi RRL 14, 2000115 (2020)

Deterministically fabricated quantum dot single-photon source emitting indistinguishable photons in the telecom O-band

Authors: N. Srocka, P. Mrowiński, J. Große, M. von Helversen, T. Heindel, S. Rodt, S. Reitzenstein

Abstract: In this work we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. The quantum devices are fabricated using in-situ electron beam lithography in combination with the thermocompression bonding to realize a backside gold mirror. Our structures are based on InGaAs/GaAs heterostructures, where the QD emission is redshifted towards the telecom O-b… ▽ More In this work we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. The quantum devices are fabricated using in-situ electron beam lithography in combination with the thermocompression bonding to realize a backside gold mirror. Our structures are based on InGaAs/GaAs heterostructures, where the QD emission is redshifted towards the telecom O-band at 1.3 μm via a strain reducing layer. QDs pre-selected by cathodoluminescence mapping are embedded into mesa structures with a back-side gold mirror for enhanced photon-extraction efficiency. Photon-autocorrelation measurements under pulsed non-resonant wetting-layer excitation are performed at temperatures up to 40 K showing pure single-photon emission which makes the devices compatible with stand-alone operation using Stirling cryocoolers. Using pulsed p-shell excitation we realize single-photon emission with high multi-photon suppression of g(2)(0) = 0.027 +- 0.005, post-selected two-photon interference of about (96 +- 10) % and an associated coherence time of (212 +- 25) ps. Moreover, the structures show an extraction efficiency of ~5 %, which compares well with values expected from numeric simulations of this photonic structure. Further improvements on our devices will enable implementations of quantum communication via optical fibers. △ Less

Submitted 15 April, 2020; v1 submitted 9 April, 2020; originally announced April 2020.

Entanglement robustness to excitonic spin precession in a quantum dot

Authors: Samir Bounouar, Gabriel Rein, Kisa Barkemeyer, Julian Schleibner, Peter Schnauber, Manuel Gschrey, Jan-Hindrik Schulze, André Strittmatter, Sven Rodt, Andreas Knorr, Alexander Carmele, Stephan Reitzenstein

Abstract: A semiconductor quantum dot (QD) is an attractive resource to generate polarization-entangled photon pairs. We study the excitonic spin precession (flip-flop) in a family of QDs with different excitonic fine-structure splitting (FSS) and its impact on the entanglement of photons generated from the excitonic-biexcitonic radiative cascade. Our results reveal that coherent processes leave the time po… ▽ More A semiconductor quantum dot (QD) is an attractive resource to generate polarization-entangled photon pairs. We study the excitonic spin precession (flip-flop) in a family of QDs with different excitonic fine-structure splitting (FSS) and its impact on the entanglement of photons generated from the excitonic-biexcitonic radiative cascade. Our results reveal that coherent processes leave the time post-selected entanglement of QDs with finite FSS unaffected while changing the eigenstates of the system. The flip-flop's precession is observed via quantum tomography through anomalous oscillations of the coincidences in the rectilinear basis. A theoretical model is constructed with the inclusion of an excitonic flip-flop rate and is compared with a two-photon quantum tomography measurement on a QD exhibiting the spin flip-flop mechanism. A generalization of the theoretical model allows estimating the degree of entanglement as a function of the FSS and the spin-flip rate. For a finite temporal resolution, the negativity is found to be oscillating with respect to both the FSS and the spin-flip rate. This oscillatory behavior disappears for perfect temporal resolution and maximal entanglement is retrieved despite the flip-flop process. △ Less

Submitted 31 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. B 102, 045304 (2020)

Plug&play fibre-coupled 73 kHz single-photon source operating in the telecom O-band

Authors: Anna Musial, Kinga Zolnacz, Nicole Srocka, Oleh Kravets, Jan Große, Jacek Olszewski, Krzysztof Poturaj, Grzegorz Wojcik, Pawel Mergo, Kamil Dybka, Mariusz Dyrkacz, Michal Dlubek, Kristian Lauritsen, Andreas Bülter, Philipp-Immanuel Schneider, Lin Zschiedrich, Sven Burger, Sven Rodt, Waclaw Urbanczyk, Grzegorz Sek, Stephan Reitzenstein

Abstract: A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challeng… ▽ More A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challenge by developing a ready to use semiconductor quantum dot (QD)-based device that launches single photons at a wavelength of 1.3 um directly into a single-mode optical fibre. In our approach the QD is deterministically integrated into a nanophotonic structure to ensure efficient on-chip coupling into a fibre. The whole arrangement is integrated into a 19" compatible housing to enable stand-alone operation by cooling via a compact Stirling cryocooler. The realized source delivers single photons with multiphoton events probability as low as 0.15 and single-photon emission rate up to 73 kHz into a standard telecom single-mode fibre. △ Less

Submitted 21 December, 2019; originally announced December 2019.

Comments: 20 pages, 3 figures

Journal ref: Adv. Quantum Technol. 3, 2000018 (2020)

Deterministically Fabricated Solid-State Quantum-Light Sources

Authors: Sven Rodt, Stephan Reitzenstein, Tobias Heindel

Abstract: This topical review focuses on solid-state quantum-light sources which are fabricated in a deterministic fashion. In this framework we cover quantum emitters represented by semiconductor quantum dots, colour centres in diamond, and defect-/strain-centres in two-dimensional materials. First, we introduce the topic of quantum-light sources and non-classical light generation for applications in photo… ▽ More This topical review focuses on solid-state quantum-light sources which are fabricated in a deterministic fashion. In this framework we cover quantum emitters represented by semiconductor quantum dots, colour centres in diamond, and defect-/strain-centres in two-dimensional materials. First, we introduce the topic of quantum-light sources and non-classical light generation for applications in photonic quantum technologies, motivating the need for the development of scalable device technologies to push the field to real-world applications. In the second part, we summarize material systems hosting quantum emitters in the solid-state. The third part reviews deterministic fabrication techniques and comparatively discusses their advantages and disadvantages. The techniques are classified in bottom-up approaches, exploiting the site-controlled positioning of the quantum emitters themselves, and top-down approaches, allowing for the precise alignment of photonic microstructures to pre-selected quantum emitters. Special emphasis is put on the progress achieved in the development of in-situ techniques, which significantly pushed the performance of quantum-light sources towards applications. Additionally we discuss hybrid approaches, exploiting pick-and-place techniques or wafer-bonding. The fourth part presents state-of-the-art quantum-dot quantum-light sources based on the fabrication techniques presented in the previous sections, which feature engineered functionality and enhanced photon collection efficiency. The article closes by highlighting recent applications of deterministic solid-state-based quantum-light sources in the fields of quantum communication, quantum computing, and quantum metrology, and discussing future perspectives in the field of solid-state quantum-light sources. △ Less

Submitted 6 December, 2019; originally announced December 2019.

Comments: 37 pages, 13 Figures, Topical Review, Note: This is the version of the article before peer review or editing, as submitted by an author to 'Journal of Physics: Condensed Matter'. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-648X/ab5e15

Journal ref: Journal of Physics: Condensed Matter (2019)

Optimized Designs for Telecom-Wavelength Quantum Light Sources Based on Hybrid Circular Bragg Gratings

Authors: Lucas Rickert, Timm Kupko, Sven Rodt, Stephan Reitzenstein, Tobias Heindel

Abstract: We present a design study of quantum light sources based on hybrid circular Bragg Gratings (CBGs) for emission wavelengths in the telecom O-band. The evaluated CBG designs show photon extraction efficiencies > 95% and Purcell factors close to 30. Using simulations based on the finite element method, and considering the influence of possible fabrication imperfections, we identify optimized high-per… ▽ More We present a design study of quantum light sources based on hybrid circular Bragg Gratings (CBGs) for emission wavelengths in the telecom O-band. The evaluated CBG designs show photon extraction efficiencies > 95% and Purcell factors close to 30. Using simulations based on the finite element method, and considering the influence of possible fabrication imperfections, we identify optimized high-performance CBG designs which are robust against structural aberrations. In particular, full 3D simulations reveal that the designs show robustness regarding deviations of the emitter position in the device well within reported positioning accuracies of deterministic fabrication technologies. Furthermore, we investigate the coupling of the evaluated hybrid CBG designs to single-mode optical fibers, which is particularly interesting for the development of practical quantum light sources. We obtain coupling efficiencies of up to 77% for off-the-shelf fibers, and again proof robustness against fabrication imperfections. Our results show prospects for the fabrication of close-to-ideal fiber-coupled quantum light sources for long distance quantum communication. △ Less

Submitted 1 November, 2019; v1 submitted 22 August, 2019; originally announced August 2019.

Comments: 13 pages, 8 figures, including Supplemental Material, added additional simulations in full 3D setting accounting for finite displacement of dipole emitter

Journal ref: Optics Express 27 (25), 36824-36837 (2019)

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

Authors: Paweł Podemski, Anna Musiał, Krzysztof Gawarecki, Aleksander Maryński, Przemysław Gontar, Artem Bercha, Witold A. Trzeciakowski, Nicole Srocka, Tobias Heuser, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimen… ▽ More The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application. △ Less

Submitted 17 January, 2020; v1 submitted 14 August, 2019; originally announced August 2019.

Comments: 15 pages, 3 figures, improved manuscript text and figures

Journal ref: Appl. Phys. Lett. 116, 023102 (2020)

Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si$_3$N$_4$ quantum photonic circuits

Authors: Peter Schnauber, Anshuman Singh, Johannes Schall, Suk In Park, Jin Dong Song, Sven Rodt, Kartik Srinivasan, Stephan Reitzenstein, Marcelo Davanco

Abstract: Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and netwo… ▽ More Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Towards this, we use low-temperature $\textit{in situ}$ electron-beam lithography to deterministically produce hybrid GaAs/Si$_3$N$_4$ photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si$_3$N$_4$ waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of post-selected indistinguishable photons. This indicates a promising path towards significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip. △ Less

Submitted 28 May, 2019; originally announced May 2019.

Journal ref: Nano Letters, published online (2019)

Directional emission of a deterministically fabricated quantum dot - Bragg reflection multi-mode waveguide system

Authors: Paweł Mrowiński, Peter Schnauber, Philipp Gutsche, Arsenty Kaganskiy, Johannes Schall, Sven Burger, Sven Rodt, Stephan Reitzenstein

Abstract: We report on the experimental study and numerical analysis of chiral light-matter coupling in deterministically fabricated quantum dot (QD) waveguide structures. We apply in-situ electron beam lithography to deterministically integrate single InGaAs/GaAs QDs into GaAs-DBR waveguides to systematically explore the dependence of chiral coupling on the position of the QD inside the waveguide. By a ser… ▽ More We report on the experimental study and numerical analysis of chiral light-matter coupling in deterministically fabricated quantum dot (QD) waveguide structures. We apply in-situ electron beam lithography to deterministically integrate single InGaAs/GaAs QDs into GaAs-DBR waveguides to systematically explore the dependence of chiral coupling on the position of the QD inside the waveguide. By a series of micro-photoluminescence measurements, we determine the directionality contrast of emission into left and right traveling waveguide modes revealing a maximum of 0.93 for highly off-center QDs and an oscillatory dependence of this contrast on the QD position. In numerical simulations we obtain insight into chiral light-matter coupling by computing the light field emitted by a circularly polarized source and its overlap with multiple guided modes of the structure, which enables us to calculate directional $β$-factors for the quantum emitters. The calculated dependence of the directionality on the off-center QD position is in good agreement with the experimental data. It confirms the control of chiral effects in deterministically fabricated QD-waveguide systems with high potential for future non-reciprocal on-chip systems required for quantum information processing. △ Less

Submitted 5 February, 2019; originally announced February 2019.

Comments: 25 pages, 5 figures

Journal ref: ACS Photonics 6, 2231 (2019)

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

Authors: Paweł Mrowiński, Anna Musiał, Krzysztof Gawarecki, Łukasz Dusanowski, Tobias Heuser, Nicole Srocka, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of… ▽ More Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge on control and on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths. △ Less

Submitted 11 August, 2019; v1 submitted 4 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 100, 115310 (2019)

A deterministically fabricated spectrally-tunable quantum dot based single-photon source

Authors: S. Fischbach, M. v. Helversen, M. Schmidt, A. Kaganskiy, R. Schmidt, A. Schliwa, T. Heindel, S. Rodt, S. Reitzenstein

Abstract: Spectrally-tunable quantum-light sources are key elements for the realization of long-distance quantum communication. A deterministically fabricated single-photon source with a photon-extraction efficiency of η=(20 +- 2) % and a tuning range of ΔE=2.5 meV is presented here. The device consists of a single pre-selected quantum dot monolithically integrated into a microlens which is bonded onto a pi… ▽ More Spectrally-tunable quantum-light sources are key elements for the realization of long-distance quantum communication. A deterministically fabricated single-photon source with a photon-extraction efficiency of η=(20 +- 2) % and a tuning range of ΔE=2.5 meV is presented here. The device consists of a single pre-selected quantum dot monolithically integrated into a microlens which is bonded onto a piezoelectric actuator via thermocompression goldbonding. The thin gold layer simultaneously acts as a backside mirror for the quantum dot emission, which is efficiently extracted from the device by an optimized lens structure patterned via 3D in-situ electron-beam lithography. The single-photon nature of the emission is proven by photon-autocorrelation measurements with $g^{(2)}$ (τ=0)=0.04 +- 0.02. The combination of deterministic fabrication, spectral-tunability and high broadband photon-extraction efficiency makes the microlens single-photon source an interesting building block towards the realization of quantum repeaters networks. △ Less

Submitted 27 May, 2018; originally announced May 2018.

Comments: 16 pages, 5 figures

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography

Authors: Nicole Srocka, Anna Musiał, Philipp-Immanuel Schneider, Paweł Mrowiński, Paweł Holewa, Sven Burger, David Quandt, André Strittmatter, Sven Rodt, Stephan Reitzenstein, Grzegorz Sęk

Abstract: The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfe… ▽ More The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10${\pm}$2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. △ Less

Submitted 2 May, 2018; originally announced May 2018.

Journal ref: AIP Adv. 8, 085205 (2018)

Numerical optimization of the extraction efficiency of a quantum-dot based single-photon emitter into a single-mode fiber

Authors: Philipp-Immanuel Schneider, Nicole Srocka, Sven Rodt, Lin Zschiedrich, Stephan Reitzenstein, Sven Burger

Abstract: We present a numerical method for the accurate and efficient simulation of strongly localized light sources, such as quantum dots, embedded in dielectric micro-optical structures. We apply the method in order to optimize the photon extraction efficiency of a single-photon emitter consisting of a quantum dot embedded into a multi-layer stack with further lateral structures. Furthermore, we present… ▽ More We present a numerical method for the accurate and efficient simulation of strongly localized light sources, such as quantum dots, embedded in dielectric micro-optical structures. We apply the method in order to optimize the photon extraction efficiency of a single-photon emitter consisting of a quantum dot embedded into a multi-layer stack with further lateral structures. Furthermore, we present methods to study the robustness of the extraction efficiency with respect to fabrication errors and defects. △ Less

Submitted 9 March, 2018; originally announced March 2018.

Comments: 14 pages, 7 figures, accepted for publication in Optics Express

Journal ref: Opt. Express 26, 8479 (2018)

Generation of maximally entangled states and coherent control in quantum dot microlenses

Authors: Samir Bounouar, Christoph de la Haye, Max Strauß, Peter Schnauber, Alexander Thoma, Manuel Gschrey, Jan-Hindrik Schulze, André Strittmatter, Sven Rodt, Stephan Reitzenstein

Abstract: The integration of entangled photon emitters in nanophotonic structures designed for the broadband enhancement of photon extraction is a major challenge for quantum information technologies. We study the potential of quantum dot (QD) microlenses to act as efficient emitters of maximally entangled photons. For this purpose, we perform quantum tomography measurements on InGaAs QDs integrated determi… ▽ More The integration of entangled photon emitters in nanophotonic structures designed for the broadband enhancement of photon extraction is a major challenge for quantum information technologies. We study the potential of quantum dot (QD) microlenses to act as efficient emitters of maximally entangled photons. For this purpose, we perform quantum tomography measurements on InGaAs QDs integrated deterministically into microlenses. Even though the studied QDs show non-zero excitonic fine-structure splitting (FSS), polarization entanglement can be prepared with a fidelity close to unity. The quality of the measured entanglement is only dependent on the temporal resolution of the used single-photon detectors compared to the period of the excitonic phase precession imposed by the FSS. Interestingly, entanglement is kept along the full excitonic wave-packet and is not affected by decoherence. Furthermore, coherent control of the upper biexcitonic state is demonstrated. △ Less

Submitted 10 January, 2018; originally announced January 2018.

Journal ref: Appl. Phys. Lett. 112, 153107 (2018)

Deterministic integration of quantum dots into on-chip multi-mode interference beamsplitters using in-situ electron beam lithography

Authors: Peter Schnauber, Johannes Schall, Samir Bounouar, Theresa Höhne, Suk-In Park, Geun-Hwan Ryu, Tobias Heindel, Sven Burger, Jin-Dong Song, Sven Rodt, Stephan Reitzenstein

Abstract: The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play… ▽ More The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via in-situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with $g^{(2)}(0) = 0.13\pm 0.02$. Due to its high patterning resolution as well as spectral and spatial control, in-situ electron beam lithography allows for integration of pre-selected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way towards multi-node, fully integrated quantum photonic chips. △ Less

Submitted 11 December, 2017; originally announced December 2017.

Comments: 20 pages, 5 figures

Journal ref: Nano Lett. 18, 2336 (2018)

Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses

Authors: Arsenty Kaganskiy, Sarah Fischbach, Andre Strittmatter, Tobias Heindel, Sven Rodt, Stephan Reitzenstein

Abstract: We report on the realization of scalable single-photon sources (SPSs) based on single site-controlled quantum dots (SCQDs) and deterministically fabricated microlenses. The fabrication process comprises the buried-stressor growth technique complemented with low-temperature in-situ electron-beam lithography for the integration of SCQDs into microlens structures with high yield and high alignment ac… ▽ More We report on the realization of scalable single-photon sources (SPSs) based on single site-controlled quantum dots (SCQDs) and deterministically fabricated microlenses. The fabrication process comprises the buried-stressor growth technique complemented with low-temperature in-situ electron-beam lithography for the integration of SCQDs into microlens structures with high yield and high alignment accuracy. The microlens-approach leads to a broadband enhancement of the photon-extraction efficiency of up to (21 $\pm$ 2) $\%$ and a high suppression of multi-photon events with g$^{(2)}$($τ$ = 0) $<$ 0.06 without background subtraction. The demonstrated combination of site-controlled growth of QDs and in-situ electron-beam lithography is relevant for arrays of efficient SPSs which can be applied in photonic quantum circuits and advanced quantum computation schemes. △ Less

Submitted 13 December, 2017; v1 submitted 11 August, 2017; originally announced August 2017.

Comments: 15 pages, 4 Figures

Journal ref: Optics Communications 413, 162-166 (2018)

Accessing the dark exciton spin in deterministic quantum-dot microlenses

Authors: Tobias Heindel, Alexander Thoma, Ido Schwartz, Emma R. Schmidgall, Liron Gantz, Dan Cogan, Max Strauß, Peter Schnauber, Manuel Gschrey, Jan-Hindrik Schulze, Andre Strittmatter, Sven Rodt, David Gershoni, Stephan Reitzenstein

Abstract: The dark exciton state in semiconductor quantum dots constitutes a long-lived solid-state qubit which has the potential to play an important role in implementations of solid-state based quantum information architectures. In this work, we exploit deterministically fabricated QD microlenses with enhanced photon extraction, to optically prepare and readout the dark exciton spin and observe its cohere… ▽ More The dark exciton state in semiconductor quantum dots constitutes a long-lived solid-state qubit which has the potential to play an important role in implementations of solid-state based quantum information architectures. In this work, we exploit deterministically fabricated QD microlenses with enhanced photon extraction, to optically prepare and readout the dark exciton spin and observe its coherent precession. The optical access to the dark exciton is provided via spin-blockaded metastable biexciton states acting as heralding state, which are identified deploying polarization-sensitive spectroscopy as well as time-resolved photon cross-correlation experiments. Our experiments reveal a spin-precession period of the dark exciton of $(0.82\pm0.01)\,$ns corresponding to a fine-structure splitting of $(5.0\pm0.7)\,μ$eV between its eigenstates $\left|\uparrow\Uparrow\pm\downarrow\Downarrow\right\rangle$. By exploiting microlenses deterministically fabricated above pre-selected QDs, our work demonstrates the possibility to scale up implementations of quantum information processing schemes using the QD-confined dark exciton spin qubit, such as the generation of photonic cluster states or the realization of a solid-state-based quantum memory. △ Less

Submitted 4 August, 2017; v1 submitted 16 June, 2017; originally announced June 2017.

Comments: 5 pages, 3 figures

Journal ref: APL Photonics 2, 121303 (2017)

A stand-alone fiber-coupled single-photon source

Authors: Alexander Schlehahn, Sarah Fischbach, Ronny Schmidt, Arsenty Kaganskiy, André Strittmatter, Sven Rodt, Tobias Heindel, Stephan Reitzenstein

Abstract: In this work, we present a stand-alone and fiber-coupled quantum-light source. The plug-and-play device is based on an optically driven quantum dot delivering single photons via an optical fiber. The quantum dot is deterministically integrated in a monolithic microlens which is precisely coupled to the core of an optical fiber via active optical alignment and epoxide adhesive bonding. The rigidly… ▽ More In this work, we present a stand-alone and fiber-coupled quantum-light source. The plug-and-play device is based on an optically driven quantum dot delivering single photons via an optical fiber. The quantum dot is deterministically integrated in a monolithic microlens which is precisely coupled to the core of an optical fiber via active optical alignment and epoxide adhesive bonding. The rigidly coupled fiber-emitter assembly is integrated in a compact Stirling cryocooler with a base temperature of 35 K. We benchmark our practical quantum device via photon auto-correlation measurements revealing $g^{(2)}(0)=0.07 \pm 0.05$ under continuous-wave excitation and we demonstrate triggered non-classical light at a repetition rate of 80 MHz. The long-term stability of our quantum light source is evaluated by endurance tests showing that the fiber-coupled quantum dot emission is stable within 4% over several successive cool-down/warm-up cycles. Additionally, we demonstrate non-classical photon emission for a user-intervention-free 100-hour test run and stable single-photon count rates up to 11.7 kHz with a standard deviation of 4%. △ Less

Submitted 1 December, 2017; v1 submitted 30 March, 2017; originally announced March 2017.

Comments: 8 pages, 4 figures, contains new experimental data

Journal ref: Scientific Reports 8, 1340 (2018)

Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique

Authors: Max Strauss, Arsenty Kaganskiy, Robert Voigt, Peter Schnauber, Jan-Hindrik Schulze, Sven Rodt, Andre Strittmatter, Stephan Reitzenstein

Abstract: Site-controlled growth of semiconductor quantum dots (QDs) represents a major advancement to achieve scalable quantum technology platforms. One immediate benefit is the deterministic integration of quantum emitters into optical microcavities. However, site-controlled growth of QDs is usually achieved at the cost of reduced optical quality. Here, we show that the buried-stressor growth technique en… ▽ More Site-controlled growth of semiconductor quantum dots (QDs) represents a major advancement to achieve scalable quantum technology platforms. One immediate benefit is the deterministic integration of quantum emitters into optical microcavities. However, site-controlled growth of QDs is usually achieved at the cost of reduced optical quality. Here, we show that the buried-stressor growth technique enables the realization of high-quality site-controlled QDs with attractive optical and quantum optical properties. This is evidenced by performing excitation power dependent resonance fluorescence experiments at cryogenic temperatures showing QD emission linewidths down to 10 $μ$eV. Resonant excitation leads to the observation of the Mollow triplet under CW excitation and enables coherent state preparation under pulsed excitation. Under resonant $π$-pulse excitation we observe clean single photon emission associated with $g^{(2)}(0)=0.12$ limited by non-ideal laser suppression. △ Less

Submitted 2 March, 2017; v1 submitted 23 December, 2016; originally announced December 2016.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 110, 111101 (2017)

CSAR 62 as negative-tone resist for high-contrast e-beam lithography at temperatures between 4 K and room temperature

Authors: Arsenty Kaganskiy, Tobias Heuser, Ronny Schmidt, Sven Rodt, Stephan Reitzenstein

Abstract: The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in-situ… ▽ More The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in-situ electron-beam lithography. At low temperature, CSAR 62 exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stability is almost temperature independent and it is found that CSAR 62 does not suffer from peeling which limits the low temperature application of the standard electron-beam resist PMMA. As such, CSAR 62 is a very promising negative-tone resist for in-situ electron-beam lithography of high quality nanostructures at low temperature. △ Less

Submitted 22 November, 2016; originally announced November 2016.

Journal ref: Journal of Vacuum Science & Technology B 34, 061603 (2016)

Two-photon interference from remote deterministic quantum dot microlenses

Authors: Alexander Thoma, Peter Schnauber, Jonas Böhm, Manuel Gschrey, Jan-Hindrik Schulze, André Strittmatter, Sven Rodt, Tobias Heindel, Stephan Reitzenstein

Abstract: We report on two-photon interference (TPI) experiments using remote deterministic single-photon sources. Employing 3D in-situ electron-beam lithography, we fabricate quantum-light sources at specific target wavelengths by integrating pre-selected semiconductor quantum dots within monolithic microlenses. The individual single-photon sources show TPI visibilities of 49% and 22%, respectively, under… ▽ More We report on two-photon interference (TPI) experiments using remote deterministic single-photon sources. Employing 3D in-situ electron-beam lithography, we fabricate quantum-light sources at specific target wavelengths by integrating pre-selected semiconductor quantum dots within monolithic microlenses. The individual single-photon sources show TPI visibilities of 49% and 22%, respectively, under pulsed p-shell excitation at 80 MHz. For the mutual TPI of the remote sources, we observe an uncorrected visibility of 29%, in quantitative agreement with the pure dephasing of the individual sources. Due to its efficient photon extraction within a broad spectral range (> 20 nm), our microlens-based approach is predestinated for future entanglement swapping experiments utilizing entangled photon pairs emitted by distant biexciton-exciton radiative cascades. △ Less

Submitted 20 December, 2016; v1 submitted 21 November, 2016; originally announced November 2016.

Comments: 7 pages, 3 figures

Journal ref: Applied Physics Letters 110, 011104 (2017)

Impact of phonons on dephasing of individual excitons in deterministic quantum dot microlenses

Authors: T. Jakubczyk, V. Delmonte, S. Fischbach, D. Wigger, D. E. Reiter, Q. Mermillod, P. Schnauber, A. Kaganskiy, J. -H. Schulze, A. Strittmatter, S. Rodt, W. Langbein, T. Kuhn, S. Reitzenstein, J. Kasprzak

Abstract: Optimized light-matter coupling in semiconductor nanostructures is a key to understand their optical properties and can be enabled by advanced fabrication techniques. Using in-situ electron beam lithography combined with a low-temperature cathodoluminescence imaging, we deterministically fabricate microlenses above selected InAs quantum dots (QDs) achieving their efficient coupling to the external… ▽ More Optimized light-matter coupling in semiconductor nanostructures is a key to understand their optical properties and can be enabled by advanced fabrication techniques. Using in-situ electron beam lithography combined with a low-temperature cathodoluminescence imaging, we deterministically fabricate microlenses above selected InAs quantum dots (QDs) achieving their efficient coupling to the external light field. This enables to perform four-wave mixing micro-spectroscopy of single QD excitons, revealing the exciton population and coherence dynamics. We infer the temperature dependence of the dephasing in order to address the impact of phonons on the decoherence of confined excitons. The loss of the coherence over the first picoseconds is associated with the emission of a phonon wave packet, also governing the phonon background in photoluminescence (PL) spectra. Using theory based on the independent boson model, we consistently explain the initial coherence decay, the zero-phonon line fraction, and the lineshape of the phonon-assisted PL using realistic quantum dot geometries. △ Less

Submitted 31 October, 2016; originally announced October 2016.

A bright triggered twin-photon source in the solid state

Authors: Tobias Heindel, Alexander Thoma, Martin von Helversen, Marco Schmidt, Alexander Schlehahn, Manuel Gschrey, Peter Schnauber, Jan-Hindrik Schulze, André Strittmatter, Jörn Beyer, Sven Rodt, Alexander Carmele, Andreas Knorr, Stephan Reitzenstein

Abstract: A non-classical light source emitting pairs of identical photons represents a versatile resource of interdisciplinary importance with applications in quantum optics and quantum biology. Emerging research fields, which benefit from such type of quantum light source, include quantum-optical spectroscopy or experiments on photoreceptor cells sensitive to photon statistics. To date, photon twins have… ▽ More A non-classical light source emitting pairs of identical photons represents a versatile resource of interdisciplinary importance with applications in quantum optics and quantum biology. Emerging research fields, which benefit from such type of quantum light source, include quantum-optical spectroscopy or experiments on photoreceptor cells sensitive to photon statistics. To date, photon twins have mostly been generated using parametric downconversion sources, relying on Poissonian number distributions, or atoms, exhibiting low emission rates. Here, we propose and experimentally demonstrate the efficient, triggered generation of photon twins using the energy-degenerate biexciton-exciton radiative cascade of a single semiconductor quantum dot. Deterministically integrated within a microlens, this nanostructure emits highly-correlated photon pairs, degenerate in energy and polarization, at a rate of up to (234 $\pm$ 4) kHz. Furthermore, we verify a significant degree of photon-indistinguishability and directly observe twin-photon emission by employing photon-number-resolving detectors, which enables the reconstruction of the emitted photon number distribution. △ Less

Submitted 11 January, 2017; v1 submitted 9 August, 2016; originally announced August 2016.

Comments: 15 pages, 5 figures, including Supplementary Information

Journal ref: Nature Communications 8, 14870 (2017)

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature- Dependent Hong-Ou-Mandel Experiments

Authors: A. Thoma, P. Schnauber, M. Gschrey, M. Seifried, J. Wolters, J. -H. Schulze, A. Strittmatter, S. Rodt, A. Carmele, A. Knorr, T. Heindel, S. Reitzenstein

Abstract: We probe the indistinguishability of photons emitted by a semiconductor quantum dot (QD) via time- and temperature- dependent two-photon interference (TPI) experiments. An increase in temporal-separation between consecutive photon emission events, reveals a decrease in TPI visibility on a nanosecond timescale, theoretically described by a non-Markovian noise process in agreement with fluctuating c… ▽ More We probe the indistinguishability of photons emitted by a semiconductor quantum dot (QD) via time- and temperature- dependent two-photon interference (TPI) experiments. An increase in temporal-separation between consecutive photon emission events, reveals a decrease in TPI visibility on a nanosecond timescale, theoretically described by a non-Markovian noise process in agreement with fluctuating charge-traps in the QD's vicinity. Phonon-induced pure dephasing results in a decrease in TPI visibility from $(96\pm4)\,$\% at 10\,K to a vanishing visibility at 40\,K. In contrast to Michelson-type measurements, our experiments provide direct access to the time-dependent coherence of a quantum emitter at a nanosecond timescale. △ Less

Submitted 22 December, 2015; v1 submitted 21 July, 2015; originally announced July 2015.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. Lett. 116, 033601 (2016)

Enhanced photon-extraction efficiency from deterministic quantum-dot microlenses

Authors: M. Gschrey, M. Seifried, L. Krüuger, R. Schmidt, J. -H. Schulze, T. Heindel, S. Burger, S. Rodt, F. Schmidt, A. Strittmatter, S. Reitzenstein

Abstract: The prospect of realizing building blocks for long-distance quantum communication is a major driving force for the development of advanced nanophotonic devices. Significant progress has been achieved in this field with respect to the fabrication of efficient quantum-dot-based single-photon sources. More recently, even spin-photon entanglement and quantum teleportation have been demonstrated in sem… ▽ More The prospect of realizing building blocks for long-distance quantum communication is a major driving force for the development of advanced nanophotonic devices. Significant progress has been achieved in this field with respect to the fabrication of efficient quantum-dot-based single-photon sources. More recently, even spin-photon entanglement and quantum teleportation have been demonstrated in semiconductor systems. These results are considered as crucial steps towards the realization of a quantum repeater. The related work has almost exclusively been performed on self-assembled quantum dots (QDs) and random device technology. At this point it is clear that further progress in this field towards real applications will rely crucially on deterministic device technologies which will, for instance, enable the processing of bright quantum light sources with pre-defined emission energy. Here we report on enhanced photon-extraction efficiency from monolithically integrated microlenses which are coupled deterministically to single QDs. The microlenses with diameters down to 800 nm were aligned to single QDs by in-situ electron-beam lithography using a low-temperature cathodoluminescence setup. This deterministic device technology allowed us to obtain an enhancement of photon extraction efficiency for QDs integrated into microlenses as compared to QDs in unstructured surfaces. The excellent optical quality of the structures is demonstrated by cathodoluminescence and micro-photoluminescence spectroscopy. A Hong-Ou-Mandel experiment states the emission of single indistinguishable photons. △ Less

Submitted 21 December, 2013; originally announced December 2013.

Comments: 18 pages, 5 figures

Journal ref: Nat. Commun. 6, 7662 (2015)

In-situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

Authors: M. Gschrey, F. Gericke, A. Schüßler, R. Schmidt, J. -H. Schulze, T. Heindel, S. Rodt, A. Strittmatter, S. Reitzenstein

Abstract: We report on the deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography. The fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step the position and spectral features of single InGaAs quantum dots (QDs) are detected by CL. Then circular sub-… ▽ More We report on the deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography. The fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step the position and spectral features of single InGaAs quantum dots (QDs) are detected by CL. Then circular sub-um mesa-structures are exactly defined by high-resolution electron-beam lithography and subsequent etching in the second step. CL spectroscopy and micro-photoluminscence spectroscopy demonstrate the high optical quality of the single-QD mesa-structures with emission linewidths below 15 ueV and g(2)(0) = 0.04. Our lithography method allows for an alignment precision better than 100 nm which paves the way for a fully-deterministic device technology using in-situ CL lithography. △ Less

Submitted 27 June, 2013; v1 submitted 12 April, 2013; originally announced April 2013.

Comments: 4 pages, 4 figures

Journal ref: Applied Physics Letters 102, 251113 (2013)

GaN/AlN Quantum Dots for Single Qubit Emitters

Authors: M. Winkelnkemper, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg

Abstract: We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential… ▽ More We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to a pronounced linear polarization of the ground state and excited state transitions. An externally applied uniaxial stress can be used to either induce a linear polarization of the ground-state transition for emission of single polarized photons or even to compensate the polarization induced by the structural elongation. △ Less

Submitted 22 September, 2008; v1 submitted 31 July, 2008; originally announced July 2008.

Comments: 6 pages, 9 figures. Accepted at Journal of Physics: Condensed Matter

Journal ref: J. Phys.: Condens. Matter 20, 454211 (2008)

Decay dynamics of neutral and charged excitonic complexes in single InAs/GaAs quantum dots

Authors: M. Feucker, R. Seguin, S. Rodt, A. Hoffmann, D. Bimberg

Abstract: Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 de… ▽ More Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 deviating from the theoretically predicted value of 2. A ratio of 1.5 for the positively charged exciton and biexciton decay time is predicted and exactly matched by the measured ratio indicating identical specific transition times for the transition channels involved. △ Less

Submitted 7 February, 2008; originally announced February 2008.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 92, 063116 (2008)

Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides

Authors: M. Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reissmann, A. Strittmatter, A. Hoffmann, D. Bimberg

Abstract: We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL). The emission lines exhibit a systematic linear polarization in the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]--a symmetry that is non-n… ▽ More We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL). The emission lines exhibit a systematic linear polarization in the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]--a symmetry that is non-native to hexagonal crystals. Eight-band k.p calculations reveal a mechanism that can explain the observed polarizations: The character of the hole(s) in an excitonic complex determines the polarization direction of the respective emission if the QD is slightly elongated. Transitions involving A-band holes are polarized parallel to the elongation; transitions involving B-type holes are polarized in the orthogonal direction. The energetic separation of both hole states is smaller than 10 meV. The mechanism leading to the linear polarizations is not restricted to InGaN QDs, but should occur in other wurtzite-nitride QDs and in materials with similar valence band structure. △ Less

Submitted 21 November, 2007; originally announced November 2007.

Comments: Conf. Proc. of the MSS-13 in Genova 2007, accepted at Physica E

Journal ref: Physica E 40, 2217 (2008)

Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

Authors: M. Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reissmann, A. Strittmatter, A. Hoffmann, D. Bimberg

Abstract: Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving… ▽ More Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band. △ Less

Submitted 24 May, 2007; originally announced May 2007.

Comments: accepted at Journal of Applied Physics

Journal ref: J. Appl. Phys. 101, 113708 (2007)

Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

Authors: R. Seguin, A. Schliwa, T. D. Germann, S. Rodt, M. Winkelnkemper, K. Pötschke, A. Strittmatter, U. W. Pohl, T. Hammerschmidt, P. Kratzer, D. Bimberg

Abstract: A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different… ▽ More A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position. △ Less

Submitted 2 January, 2007; originally announced January 2007.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 89, 263109 (2006)

Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots

Authors: R. Seguin, A. Schliwa, T. D. Germann, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg

Abstract: A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excito… ▽ More A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excitonic complexes change dramatically. The results are interpreted in terms of a change of electron and hole wavefunction shape and mutual position. △ Less

Submitted 17 October, 2006; originally announced October 2006.

Comments: 2 pages, 2 figures, Proceedings of the ICPS-28, Vienna, Austria 2006

Journal ref: AIP Conf. Proc. 893, 919 (2006)

Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots

Authors: R. Seguin, S. Rodt, A. Schliwa, K. Pötschke, U. W. Pohl, D. Bimberg

Abstract: A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of quantum dots of different sizes are analyzed. Special attention is paid to the energetic structure of the charged excited exciton (hot trion). A varying degree of intermixing within the hot trion states leads to varying… ▽ More A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of quantum dots of different sizes are analyzed. Special attention is paid to the energetic structure of the charged excited exciton (hot trion). A varying degree of intermixing within the hot trion states leads to varying degrees of polarization of the corresponding emission lines. The emission characteristics change from circularly polarized for small quantum dots to elliptically polarized for large quantum dots. The findings are explained by a change of magnitude of the anisotropic exchange interaction and compared to the related effect of fine-structure splitting in the neutral exciton and biexciton emission. △ Less

Submitted 17 October, 2006; originally announced October 2006.

Comments: 4 pages, 3 figures, to be published in phys. stat. sol (b), proceedings of the QD2006, May 1-5 2006, Chamonix-Mont-Blanc, France

Journal ref: phys. stat. sol. (b) 243, 3937 (2006).

Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

Authors: R. Seguin, A. Schliwa, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg

Abstract: A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $μ$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuratio… ▽ More A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $μ$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend. △ Less

Submitted 16 October, 2006; originally announced October 2006.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 95, 257402 (2005)