Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics
Authors:
Victor Lopez-Richard,
Igor Ricardo Filgueira e Silva,
Gabriel L. Rodrigues,
Kenji Watanabe,
Takashi Taniguchi,
Alisson R. Cadore
Abstract:
Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and nonvolatile interpretations. Here, we present a unified dynamic model that captures the essential physics of the GFET response under periodic gate modulation, accou…
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Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and nonvolatile interpretations. Here, we present a unified dynamic model that captures the essential physics of the GFET response under periodic gate modulation, accounting for both intrinsic relaxation processes and externally driven charge transfer. By modeling non-equilibrium carrier dynamics as a competition between injection and reabsorption rates, we uncover two distinct regimes: one governed by intrinsic, frequency-independent relaxation and another exhibiting frequency-locked behavior where the response is tied to the external drive. This distinction resolves apparent nonvolatile effects and explains loop invariance in floating-gate structures via displacement current-driven charge injection. Our framework predicts the evolution of the hysteresis loop shape, amplitude, and direction across a wide range of driving conditions, offering a versatile tool for interpreting experimental results and guiding the design of next-generation graphene-based electronic systems.
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Submitted 10 June, 2025;
originally announced June 2025.
Optical memory in a MoSe$_2$/Clinochlore device
Authors:
Alessandra Ames,
Frederico B. Sousa,
Gabriel A. D. Souza,
Raphaela de Oliveira,
Igor R. F. Silva,
Gabriel L. Rodrigues,
Kenji Watanabe,
Takashi Taniguchi,
Gilmar E. Marques,
Ingrid D. Barcelos,
Alisson R. Cadore,
Victor López-Richard,
Marcio D. Teodoro
Abstract:
Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric su…
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Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe$_2$/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe$_2$ monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures.
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Submitted 9 October, 2024;
originally announced October 2024.
