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Spin precession and laser-induced spin-polarized photocurrents
Authors:
Esteban A. Rodríguez-Mena,
Matías Berdakin,
Luis E. F. Foa Torres
Abstract:
Controlling spin currents in topological insulators (TIs) is crucial for spintronics but challenged by the robustness of their chiral edge states, which impedes the spin manipulation required for devices like spin-field effect transistors (SFETs). We theoretically demonstrate that this challenge can be overcome by synergistically applying circularly polarized light and gate-tunable Rashba spin-orb…
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Controlling spin currents in topological insulators (TIs) is crucial for spintronics but challenged by the robustness of their chiral edge states, which impedes the spin manipulation required for devices like spin-field effect transistors (SFETs). We theoretically demonstrate that this challenge can be overcome by synergistically applying circularly polarized light and gate-tunable Rashba spin-orbit coupling (rSOC) to a 2D TI. Laser irradiation provides access to Floquet sidebands where rSOC induces controllable spin precession, leading to the generation of one-way, switchable spin-polarized photocurrents, an effect forbidden in equilibrium TIs. This mechanism effectively realizes SFET functionality within a driven TI, specifically operating within a distinct Floquet replica, offering a new paradigm for light-based control in topological spintronics.
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Submitted 8 July, 2025;
originally announced July 2025.
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Hole spin qubits in unstrained Germanium layers
Authors:
Lorenzo Mauro,
Mauricio J. Rodriguez,
Esteban A. Rodriguez-Mena,
Yann-Michel Niquet
Abstract:
Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the optimization of the magnetic field orientation. The figures of merit (Rabi frequencies, lifetimes...) can indeed vary by an order of magnitude within a few degrees around the heterostructure plane. We propose to address t…
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Strained germanium heterostructures are one of the most promising material for hole spin qubits but suffer from the strong anisotropy of the gyromagnetic factors that hinders the optimization of the magnetic field orientation. The figures of merit (Rabi frequencies, lifetimes...) can indeed vary by an order of magnitude within a few degrees around the heterostructure plane. We propose to address this issue by confining the holes at the interface of an unstrained, bulk Ge substrate or thick buffer. We model such structures and show that the gyromagnetic anisotropy is indeed considerably reduced. In addition, the Rabi frequencies and quality factors can be significantly improved with respect to strained heterostructures. This extends the operational range of the qubits and shall ease the scale-up to many-qubit systems.
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Submitted 6 June, 2025; v1 submitted 5 June, 2025;
originally announced June 2025.
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Dressed basis sets for the modeling of exchange interactions in double quantum dots
Authors:
Mauricio J. Rodríguez,
Esteban A. Rodríguez-Mena,
Ahmad Fouad Kalo,
Yann-Michel Niquet
Abstract:
We discuss the microscopic modeling of exchange interactions between double semiconductor quantum dots used as spin qubits. Starting from a reference full configuration interaction (CI) calculation for the two-particle wave functions, we build a reduced basis set of dressed states that can describe the ground-state singlets and triplets over the whole operational range with as few as one hundred b…
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We discuss the microscopic modeling of exchange interactions between double semiconductor quantum dots used as spin qubits. Starting from a reference full configuration interaction (CI) calculation for the two-particle wave functions, we build a reduced basis set of dressed states that can describe the ground-state singlets and triplets over the whole operational range with as few as one hundred basis functions (as compared to a few thousands for the full CI). This enables fast explorations of the exchange interactions landscape as well as efficient time-dependent simulations. We apply this methodology to a double hole quantum dot in germanium, and discuss the physics of exchange interactions in this system. We show that the net exchange splitting results from a complex interplay between inter-dot tunneling, Coulomb exchange and correlations. We analyze, moreover, the effects of confinement, strains and Rashba interactions on the anisotropic exchange and singlet-triplet mixings at finite magnetic field. We finally illustrate the relevance of this methodology for time-dependent calculations on a singlet-triplet qubit.
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Submitted 25 April, 2025;
originally announced April 2025.
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A two-dimensional 10-qubit array in germanium with robust and localised qubit control
Authors:
Valentin John,
Cécile X. Yu,
Barnaby van Straaten,
Esteban A. Rodríguez-Mena,
Mauricio Rodríguez,
Stefan Oosterhout,
Lucas E. A. Stehouwer,
Giordano Scappucci,
Stefano Bosco,
Maximilian Rimbach-Russ,
Yann-Michel Niquet,
Francesco Borsoi,
Menno Veldhorst
Abstract:
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabricati…
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Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling.
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Submitted 17 February, 2025; v1 submitted 20 December, 2024;
originally announced December 2024.
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Optimal operation of hole spin qubits
Authors:
Marion Bassi,
Esteban-Alonso Rodrıguez-Mena,
Boris Brun,
Simon Zihlmann,
Thanh Nguyen,
Victor Champain,
José Carlos Abadillo-Uriel,
Benoit Bertrand,
Heimanu Niebojewski,
Romain Maurand,
Yann-Michel Niquet,
Xavier Jehl,
Silvano De Franceschi,
Vivien Schmitt
Abstract:
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast, electric-field-mediated control stemming from their intrinsically large spin-orbit coupling [1, 2]. This key feature is accompanied by an undesirable susceptibility to charge…
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Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast, electric-field-mediated control stemming from their intrinsically large spin-orbit coupling [1, 2]. This key feature is accompanied by an undesirable susceptibility to charge noise, which usually limits qubit coherence. Here, by varying the magnetic-field orientation, we experimentally establish the existence of ``sweetlines'' in the polar-azimuthal manifold where the qubit is insensitive to charge noise. In agreement with recent predictions [3], we find that the observed sweetlines host the points of maximal driving efficiency, where we achieve fast Rabi oscillations with quality factors as high as 1200. Furthermore, we demonstrate that moderate adjustments in gate voltages can significantly shift the sweetlines. This tunability allows multiple qubits to be simultaneously made insensitive to electrical noise, paving the way for scalable qubit architectures that fully leverage all-electrical spin control. The conclusions of this experimental study, performed on a silicon metal-oxide-semiconductor device, are expected to apply to other implementations of hole spin qubits.
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Submitted 17 December, 2024;
originally announced December 2024.
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Strain engineering in Ge/GeSi spin qubits heterostructures
Authors:
Lorenzo Mauro,
Esteban A. Rodríguez-Mena,
Biel Martinez,
Yann-Michel Niquet
Abstract:
The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered…
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The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered by strains. We show that uniaxial strains can raise in-plane $g$-factors above unity while leaving $g_z^*$ essentially constant. We discuss how the etching of an elongated mesa in a strained buffer can actually induce uniaxial (but inhomogeneous) strains in the heterostructure. This broadens the operational magnetic field range and enables spin manipulation by shuttling holes between neighboring dots with different $g$-factors.
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Submitted 25 February, 2025; v1 submitted 29 July, 2024;
originally announced July 2024.
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Unifying Floquet theory of longitudinal and dispersive readout
Authors:
Alessandro Chessari,
Esteban A. Rodríguez-Mena,
José Carlos Abadillo-Uriel,
Victor Champain,
Simon Zihlmann,
Romain Maurand,
Yann-Michel Niquet,
Michele Filippone
Abstract:
We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of…
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We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of the AC Stark shift as function of the driving strength $A_{\rm q}$, while the dispersive shift $χ$ depends on its curvature. The two quantities become proportional to each other in the weak drive limit ($A_{\rm q}\rightarrow 0$). Our approach unifies the adiabatic limit ($ω_{\rm r}\rightarrow 0$) -- where $g_\parallel$ is generated by the static spectrum curvature (or quantum capacitance) -- with the diabatic one, where the static spectrum plays no role. We derive analytical results supported by exact numerical simulations. We apply them to superconducting and spin-hybrid cQED systems, showcasing the flexibility of faster-than-dispersive longitudinal readout.
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Submitted 24 January, 2025; v1 submitted 3 July, 2024;
originally announced July 2024.
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Geometry of the dephasing sweet spots of spin-orbit qubits
Authors:
Lorenzo Mauro,
Esteban A. Rodríguez-Mena,
Marion Bassi,
Vivien Schmitt,
Yann-Michel Niquet
Abstract:
The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time reaches a maximum. Here we discuss the nature of the dephasing sweet spots of a spin-orbit qubit electrically coupled to some fluctuator. We characterize the Zeeman…
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The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time reaches a maximum. Here we discuss the nature of the dephasing sweet spots of a spin-orbit qubit electrically coupled to some fluctuator. We characterize the Zeeman energy $E_\mathrm{Z}$ of this qubit by the tensor $G$ such that $E_\mathrm{Z}=μ_B\sqrt{\vec{B}^\mathrm{T}G\vec{B}}$ (with $μ_B$ the Bohr magneton and $\vec{B}$ the magnetic field), and its response to the fluctuator by the derivative $G^\prime$ of $G$ with respect to the fluctuating field. The geometrical nature of the sweet spots on the unit sphere describing the magnetic field orientation depends on the sign of the eigenvalues of $G^\prime$. We show that sweet spots usually draw lines on this sphere. We then discuss how to characterize the electrical susceptibility of a spin-orbit qubit with test modulations on the gates. We apply these considerations to a Ge/GeSi spin qubit heterostructure, and discuss the prospects for the engineering of sweet spots.
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Submitted 4 April, 2024; v1 submitted 15 December, 2023;
originally announced December 2023.
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Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
Authors:
Esteban A. Rodríguez-Mena,
José Carlos Abadillo-Uriel,
Gaëtan Veste,
Biel Martinez,
Jing Li,
Benoît Sklénard,
Yann-Michel Niquet
Abstract:
We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured…
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We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured by a suitable correction to the minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on the steepness of the Ge/GeSi interfaces, and is suppressed if interdiffusion is strong enough. Besides the Dresselhaus interaction, the Ge/GeSi interfaces also make a contribution to the in-plane gyromagnetic $g$-factors of the holes. The tight-binding calculations also highlight the existence of a small linear Rashba interaction resulting from the couplings between the heavy-hole/light-hole manifold and the conduction band enabled by the low structural symmetry of Ge/GeSi heterostructures. These interactions can be leveraged to drive the hole spin. The linear Dresselhaus interaction may, in particular, dominate the physics of the devices for out-of-plane magnetic fields. When the magnetic field lies in-plane, it is, however, usually far less efficient than the $g$-tensor modulation mechanisms arising from the motion of the dot in non-separable, inhomogeneous electric fields and strains.
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Submitted 15 December, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Hole spin driving by strain-induced spin-orbit interactions
Authors:
José Carlos Abadillo-Uriel,
Esteban A. Rodríguez-Mena,
Biel Martinez,
Yann-Michel Niquet
Abstract:
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscill…
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Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain fields gives rise to linear Rashba spin-orbit interactions (with spatially dependent spin-orbit lengths) and g-factor modulations that allow for fast Rabi oscillations. Such inhomogeneous strains may build up spontaneously due to process and cool down stress. We discuss spin qubits in Ge/GeSi heterostructures as an illustration. We highlight that Rabi frequencies can be enhanced by one order of magnitude by shear strain gradients as small as $3\times 10^{-6}$ nm$^{-1}$ within the dots. This underlines that spin in solids can be very sensitive to strains and opens the way for strain engineering in hole spin devices for quantum information and spintronics.
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Submitted 1 September, 2023; v1 submitted 7 December, 2022;
originally announced December 2022.
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Hole spin manipulation in inhomogeneous and non-separable electric fields
Authors:
Biel Martinez,
José Carlos Abadillo-Uriel,
Esteban A. Rodríguez-Mena,
Yann-Michel Niquet
Abstract:
The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spi…
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The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC drive field is homogeneous. However, the electric field induced by the gates in quantum dot devices is not fully separable and displays significant inhomogeneities. Here, we address the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane AC electric fields. We consider Ge quantum dots electrically confined in a Ge/GeSi quantum well as an illustration. We show that the lack of separability between the vertical and in-plane motions gives rise to an additional spin-orbit coupling mechanism (beyond the usual linear and cubic in momentum Rashba terms) that modulates the principal axes of the hole gyromagnetic g-matrix. This non-separability mechanism can be of the same order of magnitude as Rashba-type interactions, and enables spin manipulation when the magnetic field is applied in the plane of the heterostructure even if the dot is symmetric (disk-shaped). More generally, we show that Rabi oscillations in strongly patterned electric fields harness a variety of g-factor modulations. We discuss the implications for the design, modeling and understanding of hole spin qubit devices.
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Submitted 28 December, 2022; v1 submitted 21 September, 2022;
originally announced September 2022.
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Spin-polarized tunable photocurrents
Authors:
Matías Berdakin,
Esteban A. Rodríguez-Mena,
L. E. F. Foa Torres
Abstract:
Harnessing the unique features of topological materials for the development of a new generation of topological based devices is a challenge of paramount importance. Using Floquet scattering theory combined with atomistic models we study the interplay between laser illumination, spin and topology in a two-dimensional material with spin-orbit coupling. Starting from a topological phase, we show how…
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Harnessing the unique features of topological materials for the development of a new generation of topological based devices is a challenge of paramount importance. Using Floquet scattering theory combined with atomistic models we study the interplay between laser illumination, spin and topology in a two-dimensional material with spin-orbit coupling. Starting from a topological phase, we show how laser illumination can selectively disrupt the topological edge states depending on their spin. This is manifested by the generation of pure spin currents and spin-polarized charge photocurrents under linearly and circularly polarized laser-illumination, respectively. Our results open a path for the generation and control of spin-polarized photocurrents.
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Submitted 31 January, 2021; v1 submitted 22 October, 2020;
originally announced October 2020.
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Topological Signatures in Quantum Transport in Anomalous Floquet-Anderson Insulators
Authors:
Esteban A. Rodriguez-Mena,
L. E. F. Foa Torres
Abstract:
Topological states require the presence of extended bulk states, as usually found in the picture of energy bands and topological states bridging the bulk gaps. But in driven systems this can be circumvented, and one can get topological states coexisting with fully localized bulk states, as in the case of the anomalous Floquet-Anderson insulator. Here, we show the fingerprints of this peculiar topo…
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Topological states require the presence of extended bulk states, as usually found in the picture of energy bands and topological states bridging the bulk gaps. But in driven systems this can be circumvented, and one can get topological states coexisting with fully localized bulk states, as in the case of the anomalous Floquet-Anderson insulator. Here, we show the fingerprints of this peculiar topological phase in the transport properties and their dependence on the disorder strength, geometrical configuration (two-terminal and multiterminal setups) and details of the driving protocol.
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Submitted 12 September, 2019;
originally announced September 2019.
