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Manifestation of critical effects in environmental parameter estimation using a quantum sensor under dynamical control
Authors:
M. Cristina Rodriguez,
Analia Zwick,
Gonzalo A. Alvarez
Abstract:
Quantum probes offer a powerful platform for exploring environmental dynamics, particularly through their sensitivity to decoherence processes. In this work, we investigate the emergence of critical behavior in the estimation of the environmental memory time $τ_c$, modeled as an Ornstein-Uhlenbeck process characterized by a Lorentzian spectral density. Using dynamically controlled qubit-based sens…
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Quantum probes offer a powerful platform for exploring environmental dynamics, particularly through their sensitivity to decoherence processes. In this work, we investigate the emergence of critical behavior in the estimation of the environmental memory time $τ_c$, modeled as an Ornstein-Uhlenbeck process characterized by a Lorentzian spectral density. Using dynamically controlled qubit-based sensors -- realized experimentally via solid-state Nuclear Magnetic Resonance (NMR) and supported by numerical simulations -- we implement tailored filter functions to interrogate the environmental noise spectrum and extract $τ_c$ from its spectral width. Our results reveal a sharp transition in estimation performance between short-memory (SM) and long-memory (LM) regimes, reflected in a non-monotonic estimation error that resembles a phase transition. This behavior is accompanied by an avoided-crossing-like structure in the estimated parameter space, indicative of two competing solutions near the critical point. These features underscore the interplay between control, decoherence, and inference in open quantum systems. Beyond their fundamental significance, these critical phenomena offer a practical diagnostic tool for identifying dynamical regimes and optimizing quantum sensing protocols. By exploiting this criticality, our findings pave the way for adaptive control strategies aimed at enhancing precision in quantum parameter estimation -- particularly in complex or structured environments such as spin networks, diffusive media, and quantum materials.
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Submitted 11 April, 2025;
originally announced April 2025.
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Analysis of a kink pair model applied to a peierls mechanism in basal and prism plane slips in sapphire deformed between 200C and 1800C
Authors:
Miguel Castillo Rodríguez,
Jacques Castaing,
Antonio Muñoz Bernabé,
Patrick Veyssière,
Arturo Domínguez Rodríguez
Abstract:
A model based on dislocation glide controlled by the nucleation and propagation of kink pairs in a high Peierls stress crystal is revisited and modified to account for changes in dislocation densities and segment lengths with temperature and stress. It is applied to the critical resolved shear stress (CRSS) for basal and prism plane slip in sapphire (alpha-Al2O3). According to agreed-upon knowledg…
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A model based on dislocation glide controlled by the nucleation and propagation of kink pairs in a high Peierls stress crystal is revisited and modified to account for changes in dislocation densities and segment lengths with temperature and stress. It is applied to the critical resolved shear stress (CRSS) for basal and prism plane slip in sapphire (alpha-Al2O3). According to agreed-upon knowledge on dislocations in sapphire, basal slip and prism plane slip are modelled with undissociated and dissociated dislocations, respectively. In the latter case, partial dislocations move independently. Amongst a number of sets of fitting parameters, good fits between experimental and modelled CRSS9s are obtained in the long segment limit over the whole range of temperatures by making use of physically sound parameters, including a stress dependence of the dislocation density.
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Submitted 4 February, 2024;
originally announced February 2024.
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$α$-Al$_2$O$_3$ sapphire and rubies deformed by dual basal slip at intermediate temperatures (900C-1300$^\circ$C) -- II. dissociation and stacking faults
Authors:
M. Castillo Rodríguez,
J. Castaing,
A. Muñoz,
P. Veyssière,
A. Domínguez Rodríguez
Abstract:
Sapphire and rubies (undoped and Cr-doped $α$-Al$_2$O$_3$ single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane (see part I). Above 1400$^\circ$C, several features associating stacking faults out of the basal planes and partial dislocations (dissociation, faulted dipoles) have been observed in previous…
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Sapphire and rubies (undoped and Cr-doped $α$-Al$_2$O$_3$ single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane (see part I). Above 1400$^\circ$C, several features associating stacking faults out of the basal planes and partial dislocations (dissociation, faulted dipoles) have been observed in previous transmission electron microscope investigations. The formation of these features involves climb controlled by atomic diffusion. Properties of climb dissociated dislocations are discussed in relation with dislocation dynamics. TEM examination of dislocation structures at lower deformation temperatures (1000-1100$^\circ$C) shows that similar features are formed but that they often imply cross-slip. A new mechanism for the formation of faulted dipole by glide is presented and an explanation for the 30° Peierls valley orientation is proposed. The presence of chromium has a small influence on stacking fault energies on planes perpendicular to the basal plane.
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Submitted 4 February, 2024;
originally announced February 2024.
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Microstructure and high temperature mechanical properties of liquid-phase-sintered $α$-SiC with Y$_2$O$_3$-Al$_2$O$_3$ additions
Authors:
Miguel Castillo Rodríguez,
Antonio Muñoz Bernabé,
Arturo Domínguez Rodríguez
Abstract:
Samples of $α$-SiC have been sintered with liquid phase (LPS) to 1950 $^\circ$C, in atmosphere of argon and processing times between 1 and 7 hours. Using scanning electron microscopy (SEM) the microstructure of the samples has been characterized, being obtained average grain size that grows with the processing time from 0.64 to 1.61 $μ$m. These samples have been deformed in compression under const…
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Samples of $α$-SiC have been sintered with liquid phase (LPS) to 1950 $^\circ$C, in atmosphere of argon and processing times between 1 and 7 hours. Using scanning electron microscopy (SEM) the microstructure of the samples has been characterized, being obtained average grain size that grows with the processing time from 0.64 to 1.61 $μ$m. These samples have been deformed in compression under constant load, to temperatures between 1450 and 1625 C, stresses between 25 and 450 MPa and strain rate between $4.2\times 10^{-8}$ and $1.5\times 10^{-6}$ s$^{-1}$. The creep parameters have been determined, obtaining for n values between 2.4 0.1 and 4.5 0.2 and Q=680 35 kJ.mol$^{-1}$ in samples sintered during 1 hour and n between 1.2 0.1 and 2.4 0.1 and Q=710 90 kJ.mol$^{-1}$ for samples sintered during 7 hours. These results have been correlated with the microstructure, being the grain boundary sliding (GBS) accommodated by lattice diffusion and the movement of dislocations the possible deformation mechanisms, operating both in a simultaneous way.
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Submitted 4 February, 2024;
originally announced February 2024.
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Chromium hardening and Peierls mechanism for basal slip in sapphire at temperatures between 900 and 1500 $^\circ$C
Authors:
Miguel Castillo Rodríguez,
Antonio Muñoz Bernabé,
Jacques Castaing,
Patrick Veyssière,
Arturo Domínguez Rodríguez
Abstract:
The plastic deformation of Cr3+ -doped a-Al2 O3 (ruby) with four distinct Cr concentrations has been studied at temperatures between 900 and 1500 $^\circ$C. The mechanical tests indicate that the processes of dislocation multiplication and the adjustments of the slip velocity of these dislocations to the imposed strain rate in undoped a-Al2 O3 are not significantly affected by the Cr concentra%on.…
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The plastic deformation of Cr3+ -doped a-Al2 O3 (ruby) with four distinct Cr concentrations has been studied at temperatures between 900 and 1500 $^\circ$C. The mechanical tests indicate that the processes of dislocation multiplication and the adjustments of the slip velocity of these dislocations to the imposed strain rate in undoped a-Al2 O3 are not significantly affected by the Cr concentra%on. The yield stress increment is approximately constant with temperature and the hardening increases with the Cr concentration. The critical resolved shear stress (CRSS) is fixed to a model based on dislocation glide controlled by the nucleation and propagation of kink pairs, modified to include the hardening due to Cr. Satisfactory fits are achieved with adjustable parameters close to those employed for undoped a-Al2 O3 .
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Submitted 4 February, 2024;
originally announced February 2024.
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Decoherence scaling transition in the dynamics of quantum information scrambling
Authors:
Federico D. Dominguez,
Maria Cristina Rodriguez,
Robin Kaiser,
Dieter Suter,
Gonzalo A. Alvarez
Abstract:
Reliable processing of quantum information for developing quantum technologies requires precise control of out-of-equilibrium many-bodysystems. This is a highly challenging task as the fragility of quantum states to external perturbations increases with the system-size. Here, we report on a series of experimental quantum simulations that quantify the sensitivity of a controlled Hamiltonian evoluti…
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Reliable processing of quantum information for developing quantum technologies requires precise control of out-of-equilibrium many-bodysystems. This is a highly challenging task as the fragility of quantum states to external perturbations increases with the system-size. Here, we report on a series of experimental quantum simulations that quantify the sensitivity of a controlled Hamiltonian evolution to perturbations that drive the system away from the targeted evolution. Based on out-of-time ordered correlations, we demonstrate that the decay-rate of the process fidelity increases with the effective number $K$ of correlated qubits as $K^α$. As a function of the perturbation strength, we observe a decoherence scaling transition of the exponent $α$ between two distinct dynamical regimes. In the limiting case below the critical perturbation strength, the exponent $α$ drops sharply below 1, and there is no inherent limit to the number of qubits that can be controlled. This resilient quantum feature of the controlled dynamics of quantum information is promising for reliable control of large quantum systems.
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Submitted 18 June, 2021; v1 submitted 25 May, 2020;
originally announced May 2020.
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Vacuum fluctuation effects due to an Abelian gauge field in 2+1 dimensions, in the presence of moving mirrors
Authors:
C. D. Fosco,
M. L. Remaggi,
M. C. Rodríguez
Abstract:
We study the Dynamical Casimir Effect (DCE) due to an Abelian gauge field in 2+1 dimensions, in the presence of semitransparent, zero-width mirrors, which may move or deform in a time-dependent way. We obtain general expressions for the probability of motion-induced pair creation, which we render in a more explicit form, for some relevant states of motion.
We study the Dynamical Casimir Effect (DCE) due to an Abelian gauge field in 2+1 dimensions, in the presence of semitransparent, zero-width mirrors, which may move or deform in a time-dependent way. We obtain general expressions for the probability of motion-induced pair creation, which we render in a more explicit form, for some relevant states of motion.
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Submitted 31 March, 2019;
originally announced April 2019.
