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Oxygen Vacancy in ZnO-$w$ Phase: Pseudohybrid Hubbard Density Functional Study
Authors:
Ivan I. Vrubel,
Anastasiia A. Pervishko,
Dmitry Yudin,
Biplab Sanyal,
Olle Eriksson,
Piotr A. Rodnyi
Abstract:
The study of zinc oxide, within the homogeneous electron gas approximation, results in overhybridization of zinc $3d$ shell with oxygen $2p$ shell, a problem shown for most transition metal chalcogenides. This problem can be partially overcome by using LDA+$U$ (or, GGA+$U$) methodology. However, in contrast to the zinc $3d$ orbital, Hubbard type correction is typically excluded for the oxygen…
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The study of zinc oxide, within the homogeneous electron gas approximation, results in overhybridization of zinc $3d$ shell with oxygen $2p$ shell, a problem shown for most transition metal chalcogenides. This problem can be partially overcome by using LDA+$U$ (or, GGA+$U$) methodology. However, in contrast to the zinc $3d$ orbital, Hubbard type correction is typically excluded for the oxygen $2p$ orbital. In this work, we provide results of electronic structure calculations of an oxygen vacancy in ZnO supercell from ab initio perspective, with two Hubbard type corrections, $U_{\mathrm{Zn}-3d}$ and $U_{\mathrm{O}-2p}$. The results of our numerical simulations clearly reveal that the account of $U_{\mathrm{O}-2p}$ has a significant impact on the properties of bulk ZnO, in particular the relaxed lattice constants, effective mass of charge carriers as well as the bandgap. For a set of validated values of $U_{\mathrm{Zn}-3d}$ and $U_{\mathrm{O}-2p}$ we demonstrate the appearance of a localized state associated with the oxygen vacancy positioned in the bandgap of the ZnO supercell. Our numerical findings suggest that the defect state is characterized by the highest overlap with the conduction band states as obtained in the calculations with no Hubbard-type correction included. We argue that the electronic density of the defect state is primarily determined by Zn atoms closest to the vacancy.
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Submitted 13 May, 2020; v1 submitted 19 September, 2019;
originally announced September 2019.
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Optical and Luminescence Properties of Zinc Oxide
Authors:
P. A. Rodnyi,
I. V. Khodyuk
Abstract:
We generalize and systematize basic experimental data on optical and luminescence properties of ZnO single crystals, thin films, powders, ceramics, and nanocrystals. We consider and study mechanisms by which two main emission bands occur, a short-wavelength band near the fundamental absorption edge and a broad long-wavelength band, the maximum of which usually lies in the green spectral range. We…
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We generalize and systematize basic experimental data on optical and luminescence properties of ZnO single crystals, thin films, powders, ceramics, and nanocrystals. We consider and study mechanisms by which two main emission bands occur, a short-wavelength band near the fundamental absorption edge and a broad long-wavelength band, the maximum of which usually lies in the green spectral range. We determine a relationship between the two luminescence bands and study in detail the possibility of controlling the characteristics of ZnO by varying the maximum position of the short-wavelength band. We show that the optical and luminescence characteristics of ZnO largely depend on the choice of the corresponding impurity and the parameters of the synthesis and subsequent treatment of the sample. Prospects for using zinc oxide as a scintillator material are discussed. Additionally, we consider experimental results that are of principal interest for practice.
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Submitted 20 March, 2012;
originally announced March 2012.
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Novel Scintillation Material - ZnO Transparent Ceramics
Authors:
P. A. Rodnyi,
K. A. Chernenko,
E. I. Gorokhova,
S. S. Kozlovskii,
V. M. Khanin,
I. V. Khodyuk
Abstract:
ZnO-based scintillation ceramics for application in HENPA LENPA analyzers have been investigated. The following ceramic samples have been prepared: undoped ones (ZnO), an excess of zinc in stoichiometry (ZnO:Zn), doped with gallium (ZnO:Ga) and lithium (ZnO:Li). Optical transmission, x-ray excited emission, scintillation decay and pulse height spectra were measured and analyzed. Ceramics have reas…
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ZnO-based scintillation ceramics for application in HENPA LENPA analyzers have been investigated. The following ceramic samples have been prepared: undoped ones (ZnO), an excess of zinc in stoichiometry (ZnO:Zn), doped with gallium (ZnO:Ga) and lithium (ZnO:Li). Optical transmission, x-ray excited emission, scintillation decay and pulse height spectra were measured and analyzed. Ceramics have reasonable transparency in visible range (up to 60% for 0.4 mm thickness) and energy resolution (14.9% at 662 keV Cs137 gamma excitation). Undoped ZnO shows slow (1.6 μs) luminescence with maximum at 2.37 eV and light yield about 57% of CsI:Tl. ZnO:Ga ceramics show relatively low light yield with ultra fast decay time (1 ns). Lithium doped ceramics ZnO:Li have better decay time than undoped ZnO with fair light yield. ZnO:Li ceramics show good characteristics under alpha-particle excitation and can be applied for the neutral particle analyzers.
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Submitted 9 November, 2011;
originally announced November 2011.
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Non-proportional scintillation response of NaI:Tl to low energy X-ray photons and electrons
Authors:
I. V. Khodyuk,
P. A. Rodnyi,
P. Dorenbos
Abstract:
Non-proportional response of the scintillation yield of NaI:Tl was measured using highly monochromatic synchrotron irradiation ranging from 9 to 100 keV. Special attention is paid to the X-ray escape peaks. They provide us additional information about non-proportional response in the range 0.9 to 12 keV. A rapid variation of the non-proportional response curve is observed near the Iodine K-electro…
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Non-proportional response of the scintillation yield of NaI:Tl was measured using highly monochromatic synchrotron irradiation ranging from 9 to 100 keV. Special attention is paid to the X-ray escape peaks. They provide us additional information about non-proportional response in the range 0.9 to 12 keV. A rapid variation of the non-proportional response curve is observed near the Iodine K-electron binding energy. A dense sampling of data is performed around this energy and that data are used to apply a method, which we call K-dip spectroscopy. This method allows us to derive the electron response curve of NaI:Tl down to energies as low as 30 eV. A comparison of our data with data of others employing different methods is made. Advantages, limitations and peculiarities of presented techniques and methods are discussed.
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Submitted 18 February, 2011;
originally announced February 2011.
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Location of the Energy Levels of the Rare-Earth Ion in BaF2 and CdF2
Authors:
P. A. Rodnyi,
I. V. Khodyuk,
G. B. Stryganyuk
Abstract:
The location of the energy levels of rare-earth (RE) elements in the energy band diagram of BaF2 and CdF2 crystals is determined. The role of RE3+ and RE2+ ions in the capture of charge carriers, luminescence, and the formation of radiation defects is evaluated. It is shown that the substantial difference in the luminescence properties of BaF2:RE and CdF2:RE is associated with the location of the…
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The location of the energy levels of rare-earth (RE) elements in the energy band diagram of BaF2 and CdF2 crystals is determined. The role of RE3+ and RE2+ ions in the capture of charge carriers, luminescence, and the formation of radiation defects is evaluated. It is shown that the substantial difference in the luminescence properties of BaF2:RE and CdF2:RE is associated with the location of the excited energy levels in the band diagram of the crystals.
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Submitted 7 September, 2010;
originally announced September 2010.
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Luminescence of a ZnO:Ga Crystal upon Excitation in Vacuum UV Region
Authors:
P. A. Rodnyi,
G. B. Stryganyuk,
I. V. Khodyuk
Abstract:
The spectral--kinetic characteristics of a ZnO:Ga single crystal upon excitation in the vacuum UV region have been studied. At a temperature of 8 K, the exciton luminescence line peaking at 3.356 eV has an extremely small half-width (7.2 meV) and a short decay time (360 ps). In the visible range, a wide luminescence band peaking at ~2.1 eV with a long luminescence time at 8 K and a decay time in…
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The spectral--kinetic characteristics of a ZnO:Ga single crystal upon excitation in the vacuum UV region have been studied. At a temperature of 8 K, the exciton luminescence line peaking at 3.356 eV has an extremely small half-width (7.2 meV) and a short decay time (360 ps). In the visible range, a wide luminescence band peaking at ~2.1 eV with a long luminescence time at 8 K and a decay time in the nanosecond range at 300 K is observed. The luminescence excitation spectra of ZnO:Ga have been measured in the range from 4 to 12.5 eV
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Submitted 7 September, 2010;
originally announced September 2010.
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Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics
Authors:
P. A. Rodnyi,
I. V. Khodyuk,
E. I. Gorokhova,
S. B. Mikhrin,
P. Dorenbos
Abstract:
The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to…
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The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.
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Submitted 7 September, 2010;
originally announced September 2010.
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Scintillation properties of ceramics based on zinc oxide
Authors:
V. A. Demidenko,
E. I. Gorokhova,
I. V. Khodyuk,
O. A. Khristich,
S. B. Mikhrin,
P. A. Rodnyi
Abstract:
Ceramics ZnO:Zn of 20mm diameter and 1.6mm thickness with an optical transparency up to 0.33 in the visible region have been prepared by hot pressing technique. Scintillating and luminescent characteristics such as emission spectra, decay time, yield, and TSL glow curve have been measured under X-ray excitation. Two emission bands peaking at 500 and 380 nm were detected, the light output was abo…
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Ceramics ZnO:Zn of 20mm diameter and 1.6mm thickness with an optical transparency up to 0.33 in the visible region have been prepared by hot pressing technique. Scintillating and luminescent characteristics such as emission spectra, decay time, yield, and TSL glow curve have been measured under X-ray excitation. Two emission bands peaking at 500 and 380 nm were detected, the light output was about 80% of that for standard BGO scintillator, main decay constant was 10.4 +/- 0.1 ns. The obtained data allow us to consider the ZnO:Zn ceramics as a perspective scintillator. Finally, the investigation shows that other ZnO-based fast scintillators can be fabricated in the form of optical ceramics.
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Submitted 7 September, 2010;
originally announced September 2010.
